The Experts below are selected from a list of 24 Experts worldwide ranked by ideXlab platform
V. N. Varyukhin - One of the best experts on this subject based on the ideXlab platform.
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Phase transitions in the CN_x-TiN System Attendant on the variation of the bias voltage during ion-stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CN_x-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CN_x-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 Å): this transition is related to an increase in the content of the fraction of medium-cell (4 Å) carbon clusters as compared to the fractions of clusters with large (8 Å) and small (2 Å) cells. Under these conditions, 80–150 Å crystalline clusters undergo the phase transition from the Ti_2C(N) carbide into graphite ( C _g) and diamond (C_d); the last two phases are represented by 100-Å clusters.
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phase transitions in the cnx tin System Attendant on the variation of the bias voltage during ion stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CNx-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CNx-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 A): this transition is related to an increase in the content of the fraction of medium-cell (4 A) carbon clusters as compared to the fractions of clusters with large (8 A) and small (2 A) cells. Under these conditions, 80–150 A crystalline clusters undergo the phase transition from the Ti2C(N) carbide into graphite (Cg) and diamond (Cd); the last two phases are represented by 100-A clusters.
Z. A. Samoilenko - One of the best experts on this subject based on the ideXlab platform.
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Phase transitions in the CN_x-TiN System Attendant on the variation of the bias voltage during ion-stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CN_x-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CN_x-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 Å): this transition is related to an increase in the content of the fraction of medium-cell (4 Å) carbon clusters as compared to the fractions of clusters with large (8 Å) and small (2 Å) cells. Under these conditions, 80–150 Å crystalline clusters undergo the phase transition from the Ti_2C(N) carbide into graphite ( C _g) and diamond (C_d); the last two phases are represented by 100-Å clusters.
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phase transitions in the cnx tin System Attendant on the variation of the bias voltage during ion stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CNx-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CNx-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 A): this transition is related to an increase in the content of the fraction of medium-cell (4 A) carbon clusters as compared to the fractions of clusters with large (8 A) and small (2 A) cells. Under these conditions, 80–150 A crystalline clusters undergo the phase transition from the Ti2C(N) carbide into graphite (Cg) and diamond (Cd); the last two phases are represented by 100-A clusters.
E. I. Pushenko - One of the best experts on this subject based on the ideXlab platform.
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Phase transitions in the CN_x-TiN System Attendant on the variation of the bias voltage during ion-stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CN_x-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CN_x-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 Å): this transition is related to an increase in the content of the fraction of medium-cell (4 Å) carbon clusters as compared to the fractions of clusters with large (8 Å) and small (2 Å) cells. Under these conditions, 80–150 Å crystalline clusters undergo the phase transition from the Ti_2C(N) carbide into graphite ( C _g) and diamond (C_d); the last two phases are represented by 100-Å clusters.
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phase transitions in the cnx tin System Attendant on the variation of the bias voltage during ion stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CNx-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CNx-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 A): this transition is related to an increase in the content of the fraction of medium-cell (4 A) carbon clusters as compared to the fractions of clusters with large (8 A) and small (2 A) cells. Under these conditions, 80–150 A crystalline clusters undergo the phase transition from the Ti2C(N) carbide into graphite (Cg) and diamond (Cd); the last two phases are represented by 100-A clusters.
N. N. Ivakhnenko - One of the best experts on this subject based on the ideXlab platform.
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Phase transitions in the CN_x-TiN System Attendant on the variation of the bias voltage during ion-stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CN_x-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CN_x-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 Å): this transition is related to an increase in the content of the fraction of medium-cell (4 Å) carbon clusters as compared to the fractions of clusters with large (8 Å) and small (2 Å) cells. Under these conditions, 80–150 Å crystalline clusters undergo the phase transition from the Ti_2C(N) carbide into graphite ( C _g) and diamond (C_d); the last two phases are represented by 100-Å clusters.
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phase transitions in the cnx tin System Attendant on the variation of the bias voltage during ion stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CNx-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CNx-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 A): this transition is related to an increase in the content of the fraction of medium-cell (4 A) carbon clusters as compared to the fractions of clusters with large (8 A) and small (2 A) cells. Under these conditions, 80–150 A crystalline clusters undergo the phase transition from the Ti2C(N) carbide into graphite (Cg) and diamond (Cd); the last two phases are represented by 100-A clusters.
B. E. Shkuratov - One of the best experts on this subject based on the ideXlab platform.
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Phase transitions in the CN_x-TiN System Attendant on the variation of the bias voltage during ion-stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CN_x-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CN_x-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 Å): this transition is related to an increase in the content of the fraction of medium-cell (4 Å) carbon clusters as compared to the fractions of clusters with large (8 Å) and small (2 Å) cells. Under these conditions, 80–150 Å crystalline clusters undergo the phase transition from the Ti_2C(N) carbide into graphite ( C _g) and diamond (C_d); the last two phases are represented by 100-Å clusters.
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phase transitions in the cnx tin System Attendant on the variation of the bias voltage during ion stimulated growth
Technical Physics, 2007Co-Authors: Z. A. Samoilenko, E. I. Pushenko, N. N. Ivakhnenko, B. E. Shkuratov, V. N. VaryukhinAbstract:The structure of amorphous CNx-TiN films grown by ion-stimulated deposition at a bias voltage U = 200–500 V is studied by X-ray diffraction. As the bias voltage increases in the range U = 300–360 V, the CNx-TiN films are shown to undergo a phase transition in the amorphous phase having different order scales (20–50 A): this transition is related to an increase in the content of the fraction of medium-cell (4 A) carbon clusters as compared to the fractions of clusters with large (8 A) and small (2 A) cells. Under these conditions, 80–150 A crystalline clusters undergo the phase transition from the Ti2C(N) carbide into graphite (Cg) and diamond (Cd); the last two phases are represented by 100-A clusters.
