The Experts below are selected from a list of 5100 Experts worldwide ranked by ideXlab platform
Hiroshi Suzuki - One of the best experts on this subject based on the ideXlab platform.
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Exafs Studies of the Difference in Local Structure of Various Tantalum Oxide Capacitor Films
MRS Proceedings, 2011Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:The extended x-ray absorption fine structure (EXAFS) above the Ta L3-edge on Tantalum Oxide capacitor films has been measured. Four kinds of Tantalum Oxide films were studied: as-deposited (amorphous), dry 0 2 annealed (crystalline), 0 2 -plasma annealed (amorphous) and 2-step (0 2 -plasma + dry O2) annealed (crystalline). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond with the differences in the local structures around Ta. The discussion looks at the relationship between the leakage current characteristics and the local structures around Ta.
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extended x ray absorption fine structure analysis of the difference in local structure of Tantalum Oxide capacitor films produced by various annealing methods
Applied Physics Letters, 1995Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:Extended x‐ray absorption fine structure (EXAFS) above the Ta L3 edge on Tantalum Oxide capacitor films has been measured. Tantalum Oxide films were prepared by low‐pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of Tantalum Oxide films were studied: as‐deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2‐plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond to the differences in the local structures around Ta.
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Extended x‐ray absorption fine structure analysis of the difference in local structure of Tantalum Oxide capacitor films produced by various annealing methods
Applied Physics Letters, 1995Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:Extended x‐ray absorption fine structure (EXAFS) above the Ta L3 edge on Tantalum Oxide capacitor films has been measured. Tantalum Oxide films were prepared by low‐pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of Tantalum Oxide films were studied: as‐deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2‐plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond to the differences in the local structures around Ta.
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ulfrathin Tantalum Oxide capacitor process using oxygen plasma annealing
Journal of The Electrochemical Society, 1994Co-Authors: Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Hidekazu Kimura, Hiroshi Suzuki, Junichiro MizukiAbstract:A highly reliable ultrathin Tantalum Oxide capacitor is fabricated by using oxygen-plasma annealing after the film deposition. A Tantalum Oxide film is deposited on a nitrided polycrystalline silicon surface using a mixture of pentaethoxy-Tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen gas. The films are annealed in an oxygen-plasma at less than 400 o C. The oxygen-plasma annealing greatly reduces the leakage current through Tantalum Oxide capacitors and produces better time-dependent dielectric breakdown characteristics than either dry O 2 annealing or two-step annealing (oxygen-plasma+dry O 2 annealings)
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Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing
Journal of The Electrochemical Society, 1994Co-Authors: Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Hidekazu Kimura, Hiroshi Suzuki, Junichiro MizukiAbstract:A highly reliable ultrathin Tantalum Oxide capacitor is fabricated by using oxygen-plasma annealing after the film deposition. A Tantalum Oxide film is deposited on a nitrided polycrystalline silicon surface using a mixture of pentaethoxy-Tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen gas. The films are annealed in an oxygen-plasma at less than 400 o C. The oxygen-plasma annealing greatly reduces the leakage current through Tantalum Oxide capacitors and produces better time-dependent dielectric breakdown characteristics than either dry O 2 annealing or two-step annealing (oxygen-plasma+dry O 2 annealings)
Satoshi Kamiyama - One of the best experts on this subject based on the ideXlab platform.
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Exafs Studies of the Difference in Local Structure of Various Tantalum Oxide Capacitor Films
MRS Proceedings, 2011Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:The extended x-ray absorption fine structure (EXAFS) above the Ta L3-edge on Tantalum Oxide capacitor films has been measured. Four kinds of Tantalum Oxide films were studied: as-deposited (amorphous), dry 0 2 annealed (crystalline), 0 2 -plasma annealed (amorphous) and 2-step (0 2 -plasma + dry O2) annealed (crystalline). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond with the differences in the local structures around Ta. The discussion looks at the relationship between the leakage current characteristics and the local structures around Ta.
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extended x ray absorption fine structure analysis of the difference in local structure of Tantalum Oxide capacitor films produced by various annealing methods
Applied Physics Letters, 1995Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:Extended x‐ray absorption fine structure (EXAFS) above the Ta L3 edge on Tantalum Oxide capacitor films has been measured. Tantalum Oxide films were prepared by low‐pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of Tantalum Oxide films were studied: as‐deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2‐plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond to the differences in the local structures around Ta.
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Extended x‐ray absorption fine structure analysis of the difference in local structure of Tantalum Oxide capacitor films produced by various annealing methods
Applied Physics Letters, 1995Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:Extended x‐ray absorption fine structure (EXAFS) above the Ta L3 edge on Tantalum Oxide capacitor films has been measured. Tantalum Oxide films were prepared by low‐pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of Tantalum Oxide films were studied: as‐deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2‐plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond to the differences in the local structures around Ta.
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ulfrathin Tantalum Oxide capacitor process using oxygen plasma annealing
Journal of The Electrochemical Society, 1994Co-Authors: Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Hidekazu Kimura, Hiroshi Suzuki, Junichiro MizukiAbstract:A highly reliable ultrathin Tantalum Oxide capacitor is fabricated by using oxygen-plasma annealing after the film deposition. A Tantalum Oxide film is deposited on a nitrided polycrystalline silicon surface using a mixture of pentaethoxy-Tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen gas. The films are annealed in an oxygen-plasma at less than 400 o C. The oxygen-plasma annealing greatly reduces the leakage current through Tantalum Oxide capacitors and produces better time-dependent dielectric breakdown characteristics than either dry O 2 annealing or two-step annealing (oxygen-plasma+dry O 2 annealings)
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Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing
Journal of The Electrochemical Society, 1994Co-Authors: Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Hidekazu Kimura, Hiroshi Suzuki, Junichiro MizukiAbstract:A highly reliable ultrathin Tantalum Oxide capacitor is fabricated by using oxygen-plasma annealing after the film deposition. A Tantalum Oxide film is deposited on a nitrided polycrystalline silicon surface using a mixture of pentaethoxy-Tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen gas. The films are annealed in an oxygen-plasma at less than 400 o C. The oxygen-plasma annealing greatly reduces the leakage current through Tantalum Oxide capacitors and produces better time-dependent dielectric breakdown characteristics than either dry O 2 annealing or two-step annealing (oxygen-plasma+dry O 2 annealings)
Junichiro Mizuki - One of the best experts on this subject based on the ideXlab platform.
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Exafs Studies of the Difference in Local Structure of Various Tantalum Oxide Capacitor Films
MRS Proceedings, 2011Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:The extended x-ray absorption fine structure (EXAFS) above the Ta L3-edge on Tantalum Oxide capacitor films has been measured. Four kinds of Tantalum Oxide films were studied: as-deposited (amorphous), dry 0 2 annealed (crystalline), 0 2 -plasma annealed (amorphous) and 2-step (0 2 -plasma + dry O2) annealed (crystalline). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond with the differences in the local structures around Ta. The discussion looks at the relationship between the leakage current characteristics and the local structures around Ta.
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extended x ray absorption fine structure analysis of the difference in local structure of Tantalum Oxide capacitor films produced by various annealing methods
Applied Physics Letters, 1995Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:Extended x‐ray absorption fine structure (EXAFS) above the Ta L3 edge on Tantalum Oxide capacitor films has been measured. Tantalum Oxide films were prepared by low‐pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of Tantalum Oxide films were studied: as‐deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2‐plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond to the differences in the local structures around Ta.
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Extended x‐ray absorption fine structure analysis of the difference in local structure of Tantalum Oxide capacitor films produced by various annealing methods
Applied Physics Letters, 1995Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:Extended x‐ray absorption fine structure (EXAFS) above the Ta L3 edge on Tantalum Oxide capacitor films has been measured. Tantalum Oxide films were prepared by low‐pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of Tantalum Oxide films were studied: as‐deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2‐plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond to the differences in the local structures around Ta.
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ulfrathin Tantalum Oxide capacitor process using oxygen plasma annealing
Journal of The Electrochemical Society, 1994Co-Authors: Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Hidekazu Kimura, Hiroshi Suzuki, Junichiro MizukiAbstract:A highly reliable ultrathin Tantalum Oxide capacitor is fabricated by using oxygen-plasma annealing after the film deposition. A Tantalum Oxide film is deposited on a nitrided polycrystalline silicon surface using a mixture of pentaethoxy-Tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen gas. The films are annealed in an oxygen-plasma at less than 400 o C. The oxygen-plasma annealing greatly reduces the leakage current through Tantalum Oxide capacitors and produces better time-dependent dielectric breakdown characteristics than either dry O 2 annealing or two-step annealing (oxygen-plasma+dry O 2 annealings)
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Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing
Journal of The Electrochemical Society, 1994Co-Authors: Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Hidekazu Kimura, Hiroshi Suzuki, Junichiro MizukiAbstract:A highly reliable ultrathin Tantalum Oxide capacitor is fabricated by using oxygen-plasma annealing after the film deposition. A Tantalum Oxide film is deposited on a nitrided polycrystalline silicon surface using a mixture of pentaethoxy-Tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen gas. The films are annealed in an oxygen-plasma at less than 400 o C. The oxygen-plasma annealing greatly reduces the leakage current through Tantalum Oxide capacitors and produces better time-dependent dielectric breakdown characteristics than either dry O 2 annealing or two-step annealing (oxygen-plasma+dry O 2 annealings)
Hidekazu Kimura - One of the best experts on this subject based on the ideXlab platform.
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Exafs Studies of the Difference in Local Structure of Various Tantalum Oxide Capacitor Films
MRS Proceedings, 2011Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:The extended x-ray absorption fine structure (EXAFS) above the Ta L3-edge on Tantalum Oxide capacitor films has been measured. Four kinds of Tantalum Oxide films were studied: as-deposited (amorphous), dry 0 2 annealed (crystalline), 0 2 -plasma annealed (amorphous) and 2-step (0 2 -plasma + dry O2) annealed (crystalline). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond with the differences in the local structures around Ta. The discussion looks at the relationship between the leakage current characteristics and the local structures around Ta.
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extended x ray absorption fine structure analysis of the difference in local structure of Tantalum Oxide capacitor films produced by various annealing methods
Applied Physics Letters, 1995Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:Extended x‐ray absorption fine structure (EXAFS) above the Ta L3 edge on Tantalum Oxide capacitor films has been measured. Tantalum Oxide films were prepared by low‐pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of Tantalum Oxide films were studied: as‐deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2‐plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond to the differences in the local structures around Ta.
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Extended x‐ray absorption fine structure analysis of the difference in local structure of Tantalum Oxide capacitor films produced by various annealing methods
Applied Physics Letters, 1995Co-Authors: Hidekazu Kimura, Junichiro Mizuki, Satoshi Kamiyama, Hiroshi SuzukiAbstract:Extended x‐ray absorption fine structure (EXAFS) above the Ta L3 edge on Tantalum Oxide capacitor films has been measured. Tantalum Oxide films were prepared by low‐pressure chemical vapor deposition (CVD) using a Ta(OC2H5)5 and O2 gas mixture. Four kinds of Tantalum Oxide films were studied: as‐deposited (amorphous), N2 annealed (crystalline), dry O2 annealed (crystalline), and O2‐plasma annealed (amorphous). From EXAFS analysis, differences in the local structures of Tantalum Oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of Tantalum Oxide capacitors correspond to the differences in the local structures around Ta.
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ulfrathin Tantalum Oxide capacitor process using oxygen plasma annealing
Journal of The Electrochemical Society, 1994Co-Authors: Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Hidekazu Kimura, Hiroshi Suzuki, Junichiro MizukiAbstract:A highly reliable ultrathin Tantalum Oxide capacitor is fabricated by using oxygen-plasma annealing after the film deposition. A Tantalum Oxide film is deposited on a nitrided polycrystalline silicon surface using a mixture of pentaethoxy-Tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen gas. The films are annealed in an oxygen-plasma at less than 400 o C. The oxygen-plasma annealing greatly reduces the leakage current through Tantalum Oxide capacitors and produces better time-dependent dielectric breakdown characteristics than either dry O 2 annealing or two-step annealing (oxygen-plasma+dry O 2 annealings)
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Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing
Journal of The Electrochemical Society, 1994Co-Authors: Satoshi Kamiyama, Hirohito Watanabe, Akira Sakai, Hidekazu Kimura, Hiroshi Suzuki, Junichiro MizukiAbstract:A highly reliable ultrathin Tantalum Oxide capacitor is fabricated by using oxygen-plasma annealing after the film deposition. A Tantalum Oxide film is deposited on a nitrided polycrystalline silicon surface using a mixture of pentaethoxy-Tantalum [Ta(OC 2 H 5 ) 5 ] and oxygen gas. The films are annealed in an oxygen-plasma at less than 400 o C. The oxygen-plasma annealing greatly reduces the leakage current through Tantalum Oxide capacitors and produces better time-dependent dielectric breakdown characteristics than either dry O 2 annealing or two-step annealing (oxygen-plasma+dry O 2 annealings)
Stanley R Williams - One of the best experts on this subject based on the ideXlab platform.
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sub nanosecond switching of a Tantalum Oxide memristor
Nanotechnology, 2011Co-Authors: Antonio C Torrezan, John Paul Strachan, G Medeirosribeiro, Stanley R WilliamsAbstract:We report sub-nanosecond switching of a metal?Oxide?metal memristor utilizing a broadband 20?GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the Tantalum Oxide memristor using pulses with durations of 105 and 120?ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.
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spectromicroscopy of Tantalum Oxide memristors
Applied Physics Letters, 2011Co-Authors: John Paul Strachan, Min-xian Zhang, Feng Miao, Ilan Goldfarb, Volker Rose, G Medeirosribeiro, Joshua J Yang, Martin V Holt, Stanley R WilliamsAbstract:We report experiments to measure material changes in Tantalum Oxide-based memristive devices. The high endurance and low power demonstrated in this material system suggests a unique mechanism for the switching, which we investigated using x-ray based spectromicroscopy and nanospectroscopy. Our study nondestructively identified a localized (<150nm diameter) Ta-rich phase surrounded by nano- or polycrystalline Ta2O5.