The Experts below are selected from a list of 7665 Experts worldwide ranked by ideXlab platform

Carmel Majidi - One of the best experts on this subject based on the ideXlab platform.

  • egain assisted room temperature sintering of silver nanoparticles for stretchable inkjet printed Thin Film electronics
    Advanced Materials, 2018
    Co-Authors: Mahmoud Tavakoli, Hugo Paisana, Mohammad H. Malakooti, Ana P. Piedade, Pedro Lopes, Daniel Green Marques, Anibal T De Almeida, Carmel Majidi
    Abstract:

    : Coating inkjet-printed traces of silver nanoparticle (AgNP) ink with a Thin layer of eutectic gallium indium (EGaIn) increases the electrical conductivity by six-orders of magnitude and significantly improves tolerance to tensile strain. This enhancement is achieved through a room-temperature "sintering" process in which the liquid-phase EGaIn alloy binds the AgNP particles (≈100 nm diameter) to form a continuous conductive trace. UltraThin and hydrographically transferrable electronics are produced by printing traces with a composition of AgNP-Ga-In on a 5 µm-thick temporary tattoo paper. The printed circuit is flexible enough to remain functional when deformed and can support strains above 80% with modest electromechanical coupling (gauge factor ≈1). These mechanically robust Thin-Film Circuits are well suited for transfer to highly curved and nondevelopable 3D surfaces as well as skin and other soft deformable substrates. In contrast to other stretchable tattoo-like electronics, the low-cost processing steps introduced here eliminate the need for cleanroom fabrication and instead requires only a commercial desktop printer. Most significantly, it enables functionalities like "electronic tattoos" and 3D hydrographic transfer that have not been previously reported with EGaIn or EGaIn-based biphasic electronics.

  • EGaIn‐Assisted Room‐Temperature Sintering of Silver Nanoparticles for Stretchable, Inkjet‐Printed, Thin‐Film Electronics
    Advanced Materials, 2018
    Co-Authors: Mahmoud Tavakoli, Hugo Paisana, Mohammad H. Malakooti, Ana P. Piedade, Pedro Lopes, Daniel Green Marques, Anibal T De Almeida, Carmel Majidi
    Abstract:

    : Coating inkjet-printed traces of silver nanoparticle (AgNP) ink with a Thin layer of eutectic gallium indium (EGaIn) increases the electrical conductivity by six-orders of magnitude and significantly improves tolerance to tensile strain. This enhancement is achieved through a room-temperature "sintering" process in which the liquid-phase EGaIn alloy binds the AgNP particles (≈100 nm diameter) to form a continuous conductive trace. UltraThin and hydrographically transferrable electronics are produced by printing traces with a composition of AgNP-Ga-In on a 5 µm-thick temporary tattoo paper. The printed circuit is flexible enough to remain functional when deformed and can support strains above 80% with modest electromechanical coupling (gauge factor ≈1). These mechanically robust Thin-Film Circuits are well suited for transfer to highly curved and nondevelopable 3D surfaces as well as skin and other soft deformable substrates. In contrast to other stretchable tattoo-like electronics, the low-cost processing steps introduced here eliminate the need for cleanroom fabrication and instead requires only a commercial desktop printer. Most significantly, it enables functionalities like "electronic tattoos" and 3D hydrographic transfer that have not been previously reported with EGaIn or EGaIn-based biphasic electronics.

Mahmoud Tavakoli - One of the best experts on this subject based on the ideXlab platform.

  • egain assisted room temperature sintering of silver nanoparticles for stretchable inkjet printed Thin Film electronics
    Advanced Materials, 2018
    Co-Authors: Mahmoud Tavakoli, Hugo Paisana, Mohammad H. Malakooti, Ana P. Piedade, Pedro Lopes, Daniel Green Marques, Anibal T De Almeida, Carmel Majidi
    Abstract:

    : Coating inkjet-printed traces of silver nanoparticle (AgNP) ink with a Thin layer of eutectic gallium indium (EGaIn) increases the electrical conductivity by six-orders of magnitude and significantly improves tolerance to tensile strain. This enhancement is achieved through a room-temperature "sintering" process in which the liquid-phase EGaIn alloy binds the AgNP particles (≈100 nm diameter) to form a continuous conductive trace. UltraThin and hydrographically transferrable electronics are produced by printing traces with a composition of AgNP-Ga-In on a 5 µm-thick temporary tattoo paper. The printed circuit is flexible enough to remain functional when deformed and can support strains above 80% with modest electromechanical coupling (gauge factor ≈1). These mechanically robust Thin-Film Circuits are well suited for transfer to highly curved and nondevelopable 3D surfaces as well as skin and other soft deformable substrates. In contrast to other stretchable tattoo-like electronics, the low-cost processing steps introduced here eliminate the need for cleanroom fabrication and instead requires only a commercial desktop printer. Most significantly, it enables functionalities like "electronic tattoos" and 3D hydrographic transfer that have not been previously reported with EGaIn or EGaIn-based biphasic electronics.

  • EGaIn‐Assisted Room‐Temperature Sintering of Silver Nanoparticles for Stretchable, Inkjet‐Printed, Thin‐Film Electronics
    Advanced Materials, 2018
    Co-Authors: Mahmoud Tavakoli, Hugo Paisana, Mohammad H. Malakooti, Ana P. Piedade, Pedro Lopes, Daniel Green Marques, Anibal T De Almeida, Carmel Majidi
    Abstract:

    : Coating inkjet-printed traces of silver nanoparticle (AgNP) ink with a Thin layer of eutectic gallium indium (EGaIn) increases the electrical conductivity by six-orders of magnitude and significantly improves tolerance to tensile strain. This enhancement is achieved through a room-temperature "sintering" process in which the liquid-phase EGaIn alloy binds the AgNP particles (≈100 nm diameter) to form a continuous conductive trace. UltraThin and hydrographically transferrable electronics are produced by printing traces with a composition of AgNP-Ga-In on a 5 µm-thick temporary tattoo paper. The printed circuit is flexible enough to remain functional when deformed and can support strains above 80% with modest electromechanical coupling (gauge factor ≈1). These mechanically robust Thin-Film Circuits are well suited for transfer to highly curved and nondevelopable 3D surfaces as well as skin and other soft deformable substrates. In contrast to other stretchable tattoo-like electronics, the low-cost processing steps introduced here eliminate the need for cleanroom fabrication and instead requires only a commercial desktop printer. Most significantly, it enables functionalities like "electronic tattoos" and 3D hydrographic transfer that have not been previously reported with EGaIn or EGaIn-based biphasic electronics.

Katsumi Kushiya - One of the best experts on this subject based on the ideXlab platform.

  • Key near-term R&D issues for continuous improvement in CIS-based Thin-Film PV modules
    Solar Energy Materials and Solar Cells, 2009
    Co-Authors: Katsumi Kushiya
    Abstract:

    Abstract In a large-area approach up to 60 cm×120 cm size, monolithically integrated CIS-based Thin-Film PV modules have come to the efficiency level of 13%. The key near-term R&D issues to realize continuous improvement in CIS-based Thin-Film PV modules are related to their competitiveness against the crystalline-Si PV modules. In this contribution, the following three issues are discussed. The first and main issue is how important it is to understand the interfaces in the CIS-based Thin-Film circuit to improve the efficiency, because CIS-based Thin-Film Circuits are fabricated in a stacked structure of four or five Thin Films. The second and third issues are how beneficial it is to develop the packaging and material recycle technologies in order to reduce the production cost.

  • yield issues on the fabrication of 30cm 30cm sized cu in ga se based Thin Film modules
    Solar Energy Materials and Solar Cells, 2003
    Co-Authors: Katsumi Kushiya, M Ohshita, I Hara, Yoshiaki Tanaka, B Sang, Yoshinori Nagoya, Muneyori Tachiyuki, Osamu Yamase
    Abstract:

    The approaches to establish a more robust and reproducible baseline process for 30cm × 30 cm-sized CIGS-based Thin-Film Circuits with a Zn(O,S,OH) x buffer layer are reported, which also lead to an achievement of 12.93% efficiency on an aperture area of 864cm 2 . Monitoring the transparency or transmittance (%T) of dip solution as a process control parameter in the chemical bath deposition (CBD)-buffer deposition step and setting the end point of dipping the CIGS-based absorbers in the solution as the %T of 60% remarkably contribute to make our CBD-buffer deposition process more reproducible. By considering carefully the growth process of metal-organic chemical vapor deposition (MOCVD)-ZnO:B window, a Thin layer of high-resistivity, intrinsic ZnO is deposited on the Zn(O,S,OH) x buffer layer to simulate the Film structure of MOCVD-ZnO:B window in the case of sputtered-5.7 GZO window. Achievement of the reproducibility of 85% for the CIGS-based Thin-Film Circuits with a sputtered-5.7 GZO window confirms that the yield goal of 85% is surely attainable independent of window-layer deposition techniques, such as MOCVD and sputtering. In this study, it is emphasized how important to eliminate unknown factors in the fabrication process for CIGS-based Thin-Film modules to improve both reproducibility and efficiency.

  • Yield issues on the fabrication of 30cm×30cm-sized Cu(In,Ga)Se-based Thin-Film modules
    Solar Energy Materials and Solar Cells, 2002
    Co-Authors: Katsumi Kushiya, M Ohshita, I Hara, Yoshiaki Tanaka, B Sang, Yoshinori Nagoya, Muneyori Tachiyuki, Osamu Yamase
    Abstract:

    The approaches to establish a more robust and reproducible baseline process for 30cm × 30 cm-sized CIGS-based Thin-Film Circuits with a Zn(O,S,OH) x buffer layer are reported, which also lead to an achievement of 12.93% efficiency on an aperture area of 864cm 2 . Monitoring the transparency or transmittance (%T) of dip solution as a process control parameter in the chemical bath deposition (CBD)-buffer deposition step and setting the end point of dipping the CIGS-based absorbers in the solution as the %T of 60% remarkably contribute to make our CBD-buffer deposition process more reproducible. By considering carefully the growth process of metal-organic chemical vapor deposition (MOCVD)-ZnO:B window, a Thin layer of high-resistivity, intrinsic ZnO is deposited on the Zn(O,S,OH) x buffer layer to simulate the Film structure of MOCVD-ZnO:B window in the case of sputtered-5.7 GZO window. Achievement of the reproducibility of 85% for the CIGS-based Thin-Film Circuits with a sputtered-5.7 GZO window confirms that the yield goal of 85% is surely attainable independent of window-layer deposition techniques, such as MOCVD and sputtering. In this study, it is emphasized how important to eliminate unknown factors in the fabrication process for CIGS-based Thin-Film modules to improve both reproducibility and efficiency.

  • stabilization of pn heterojunction between cu inga se2Thin Film absorber and zno window with zn o s oh xbuffer
    Japanese Journal of Applied Physics, 2000
    Co-Authors: Katsumi Kushiya, Osamu Yamase
    Abstract:

    Dramatic improvement of current–voltage (I–V) performance, especially the fill factor (FF) observed in the Cu(InGa)Se2-based Thin-Film Circuits with Zn(O, S, OH)x buffer after postdeposition light soaking is discussed in this study. Considering the composition of Zn(O, S, OH)x buffer and the reversible behavior with respect to postdeposition light soaking, a model is proposed, in which H2O molecules released by the dehydration of Zn(OH)2 in the Zn(O, S, OH)x buffer are considered to play a dominant role in this behavior. Based upon this model, attempts to stabilize the pn heterojunction by making the reversible behavior irreversible are, for the first time, successfully achieved by adjusting the postdeposition light-soaking conditions. The reduction of the Zn(OH)2 concentration in the Zn(O, S, OH)x buffer through the combination of heating at 130°C for at least 40 min and irradiation using a constant-light solar simulator contributes to stabilizing the pn heterojunction and improving the I–V performance as well as the electrical yield.

Osamu Yamase - One of the best experts on this subject based on the ideXlab platform.

  • yield issues on the fabrication of 30cm 30cm sized cu in ga se based Thin Film modules
    Solar Energy Materials and Solar Cells, 2003
    Co-Authors: Katsumi Kushiya, M Ohshita, I Hara, Yoshiaki Tanaka, B Sang, Yoshinori Nagoya, Muneyori Tachiyuki, Osamu Yamase
    Abstract:

    The approaches to establish a more robust and reproducible baseline process for 30cm × 30 cm-sized CIGS-based Thin-Film Circuits with a Zn(O,S,OH) x buffer layer are reported, which also lead to an achievement of 12.93% efficiency on an aperture area of 864cm 2 . Monitoring the transparency or transmittance (%T) of dip solution as a process control parameter in the chemical bath deposition (CBD)-buffer deposition step and setting the end point of dipping the CIGS-based absorbers in the solution as the %T of 60% remarkably contribute to make our CBD-buffer deposition process more reproducible. By considering carefully the growth process of metal-organic chemical vapor deposition (MOCVD)-ZnO:B window, a Thin layer of high-resistivity, intrinsic ZnO is deposited on the Zn(O,S,OH) x buffer layer to simulate the Film structure of MOCVD-ZnO:B window in the case of sputtered-5.7 GZO window. Achievement of the reproducibility of 85% for the CIGS-based Thin-Film Circuits with a sputtered-5.7 GZO window confirms that the yield goal of 85% is surely attainable independent of window-layer deposition techniques, such as MOCVD and sputtering. In this study, it is emphasized how important to eliminate unknown factors in the fabrication process for CIGS-based Thin-Film modules to improve both reproducibility and efficiency.

  • Yield issues on the fabrication of 30cm×30cm-sized Cu(In,Ga)Se-based Thin-Film modules
    Solar Energy Materials and Solar Cells, 2002
    Co-Authors: Katsumi Kushiya, M Ohshita, I Hara, Yoshiaki Tanaka, B Sang, Yoshinori Nagoya, Muneyori Tachiyuki, Osamu Yamase
    Abstract:

    The approaches to establish a more robust and reproducible baseline process for 30cm × 30 cm-sized CIGS-based Thin-Film Circuits with a Zn(O,S,OH) x buffer layer are reported, which also lead to an achievement of 12.93% efficiency on an aperture area of 864cm 2 . Monitoring the transparency or transmittance (%T) of dip solution as a process control parameter in the chemical bath deposition (CBD)-buffer deposition step and setting the end point of dipping the CIGS-based absorbers in the solution as the %T of 60% remarkably contribute to make our CBD-buffer deposition process more reproducible. By considering carefully the growth process of metal-organic chemical vapor deposition (MOCVD)-ZnO:B window, a Thin layer of high-resistivity, intrinsic ZnO is deposited on the Zn(O,S,OH) x buffer layer to simulate the Film structure of MOCVD-ZnO:B window in the case of sputtered-5.7 GZO window. Achievement of the reproducibility of 85% for the CIGS-based Thin-Film Circuits with a sputtered-5.7 GZO window confirms that the yield goal of 85% is surely attainable independent of window-layer deposition techniques, such as MOCVD and sputtering. In this study, it is emphasized how important to eliminate unknown factors in the fabrication process for CIGS-based Thin-Film modules to improve both reproducibility and efficiency.

  • stabilization of pn heterojunction between cu inga se2Thin Film absorber and zno window with zn o s oh xbuffer
    Japanese Journal of Applied Physics, 2000
    Co-Authors: Katsumi Kushiya, Osamu Yamase
    Abstract:

    Dramatic improvement of current–voltage (I–V) performance, especially the fill factor (FF) observed in the Cu(InGa)Se2-based Thin-Film Circuits with Zn(O, S, OH)x buffer after postdeposition light soaking is discussed in this study. Considering the composition of Zn(O, S, OH)x buffer and the reversible behavior with respect to postdeposition light soaking, a model is proposed, in which H2O molecules released by the dehydration of Zn(OH)2 in the Zn(O, S, OH)x buffer are considered to play a dominant role in this behavior. Based upon this model, attempts to stabilize the pn heterojunction by making the reversible behavior irreversible are, for the first time, successfully achieved by adjusting the postdeposition light-soaking conditions. The reduction of the Zn(OH)2 concentration in the Zn(O, S, OH)x buffer through the combination of heating at 130°C for at least 40 min and irradiation using a constant-light solar simulator contributes to stabilizing the pn heterojunction and improving the I–V performance as well as the electrical yield.

Hugo Paisana - One of the best experts on this subject based on the ideXlab platform.

  • egain assisted room temperature sintering of silver nanoparticles for stretchable inkjet printed Thin Film electronics
    Advanced Materials, 2018
    Co-Authors: Mahmoud Tavakoli, Hugo Paisana, Mohammad H. Malakooti, Ana P. Piedade, Pedro Lopes, Daniel Green Marques, Anibal T De Almeida, Carmel Majidi
    Abstract:

    : Coating inkjet-printed traces of silver nanoparticle (AgNP) ink with a Thin layer of eutectic gallium indium (EGaIn) increases the electrical conductivity by six-orders of magnitude and significantly improves tolerance to tensile strain. This enhancement is achieved through a room-temperature "sintering" process in which the liquid-phase EGaIn alloy binds the AgNP particles (≈100 nm diameter) to form a continuous conductive trace. UltraThin and hydrographically transferrable electronics are produced by printing traces with a composition of AgNP-Ga-In on a 5 µm-thick temporary tattoo paper. The printed circuit is flexible enough to remain functional when deformed and can support strains above 80% with modest electromechanical coupling (gauge factor ≈1). These mechanically robust Thin-Film Circuits are well suited for transfer to highly curved and nondevelopable 3D surfaces as well as skin and other soft deformable substrates. In contrast to other stretchable tattoo-like electronics, the low-cost processing steps introduced here eliminate the need for cleanroom fabrication and instead requires only a commercial desktop printer. Most significantly, it enables functionalities like "electronic tattoos" and 3D hydrographic transfer that have not been previously reported with EGaIn or EGaIn-based biphasic electronics.

  • EGaIn‐Assisted Room‐Temperature Sintering of Silver Nanoparticles for Stretchable, Inkjet‐Printed, Thin‐Film Electronics
    Advanced Materials, 2018
    Co-Authors: Mahmoud Tavakoli, Hugo Paisana, Mohammad H. Malakooti, Ana P. Piedade, Pedro Lopes, Daniel Green Marques, Anibal T De Almeida, Carmel Majidi
    Abstract:

    : Coating inkjet-printed traces of silver nanoparticle (AgNP) ink with a Thin layer of eutectic gallium indium (EGaIn) increases the electrical conductivity by six-orders of magnitude and significantly improves tolerance to tensile strain. This enhancement is achieved through a room-temperature "sintering" process in which the liquid-phase EGaIn alloy binds the AgNP particles (≈100 nm diameter) to form a continuous conductive trace. UltraThin and hydrographically transferrable electronics are produced by printing traces with a composition of AgNP-Ga-In on a 5 µm-thick temporary tattoo paper. The printed circuit is flexible enough to remain functional when deformed and can support strains above 80% with modest electromechanical coupling (gauge factor ≈1). These mechanically robust Thin-Film Circuits are well suited for transfer to highly curved and nondevelopable 3D surfaces as well as skin and other soft deformable substrates. In contrast to other stretchable tattoo-like electronics, the low-cost processing steps introduced here eliminate the need for cleanroom fabrication and instead requires only a commercial desktop printer. Most significantly, it enables functionalities like "electronic tattoos" and 3D hydrographic transfer that have not been previously reported with EGaIn or EGaIn-based biphasic electronics.