The Experts below are selected from a list of 10473 Experts worldwide ranked by ideXlab platform
R. Solanki - One of the best experts on this subject based on the ideXlab platform.
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Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition
2016Co-Authors: David R. Evans, R. SolankiAbstract:The paper will introduce a simple new method on the synthesis of both hafnium and zirconium nitrate precursors. The intermediate product, dinitrogen pentoxide produced from the water extraction from fume nitric acid via phosphorus pentoxide, was condensed by liquid nitrogen trap into a flask equipped with hafnium or zirconium tetrachloride. To give the high yield, the mixture of fume nitric acid and phosphorus pentoxide was heated to a certain temperature, from which large quantity of dinitrogen pentoxide had been generated. In the following step, hafnium or zirconium tetrachloride was refluxed over dinitrogen pentoxide at 30 to 35 oC for half-hour. The product was purified by sublimation. High yield, above 95%, was obtained. The cost for the hafnium nitrate precursor synthesis was estimated. The precursor was not stable at room temperature, and should be stored in refrigerator in sealed vials. No chlorine was detected from both EDS and chemical analysis. The volatility was evaluated by thermal gravity analysis. For high k Thin Film applications, the precursors were evaluated through the hafnium oxide Thin Film deposition via ALD process. High quality hafnium oxide Thin Films were obtained. The hafnium oxide Thin Film Property consistence using different batches of our synthesized hafnium nitrate precursor was also verified. X-ray diffraction analysis indicated the Films were smooth, uniform, amorphous as deposited and monoclinic after post annealing. For as-deposited hafnium oxide Thin Films, XPS studies showed the Films were rich in oxygen and contained nitrogen residues,- 2-which could be eliminated from forming gas post-annealing process. On the electrical Property measurement, the 57Å hafnium oxide Thin Film showed a dielectric constant of k ~ 10.5 and a capacitive equivalent thickness of approximately 21Å
David R. Evans - One of the best experts on this subject based on the ideXlab platform.
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Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition
2016Co-Authors: David R. Evans, R. SolankiAbstract:The paper will introduce a simple new method on the synthesis of both hafnium and zirconium nitrate precursors. The intermediate product, dinitrogen pentoxide produced from the water extraction from fume nitric acid via phosphorus pentoxide, was condensed by liquid nitrogen trap into a flask equipped with hafnium or zirconium tetrachloride. To give the high yield, the mixture of fume nitric acid and phosphorus pentoxide was heated to a certain temperature, from which large quantity of dinitrogen pentoxide had been generated. In the following step, hafnium or zirconium tetrachloride was refluxed over dinitrogen pentoxide at 30 to 35 oC for half-hour. The product was purified by sublimation. High yield, above 95%, was obtained. The cost for the hafnium nitrate precursor synthesis was estimated. The precursor was not stable at room temperature, and should be stored in refrigerator in sealed vials. No chlorine was detected from both EDS and chemical analysis. The volatility was evaluated by thermal gravity analysis. For high k Thin Film applications, the precursors were evaluated through the hafnium oxide Thin Film deposition via ALD process. High quality hafnium oxide Thin Films were obtained. The hafnium oxide Thin Film Property consistence using different batches of our synthesized hafnium nitrate precursor was also verified. X-ray diffraction analysis indicated the Films were smooth, uniform, amorphous as deposited and monoclinic after post annealing. For as-deposited hafnium oxide Thin Films, XPS studies showed the Films were rich in oxygen and contained nitrogen residues,- 2-which could be eliminated from forming gas post-annealing process. On the electrical Property measurement, the 57Å hafnium oxide Thin Film showed a dielectric constant of k ~ 10.5 and a capacitive equivalent thickness of approximately 21Å
T Schmidt - One of the best experts on this subject based on the ideXlab platform.
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influence of hollow cathode plasma on alcrn Thin Film deposition with vacuum arc evaporation sources
Surface & Coatings Technology, 2008Co-Authors: M Holzherr, M Falz, T SchmidtAbstract:Abstract In order to provide sufficient wear protection on tools, which supports to increase productivity in the manufacturing processes, the substrates can be coated with different hard material layers. High hardness is one important Thin Film Property to get an optimal wear protection of tools, but if the working temperature exceeds an upper limit the hardness of the Thin Film is strongly reduced. The concrete valuation of the decrease in the hardness depends on the coating materials. For the standard TiAlN-coating, the maximum operating temperature conditions is therefore limited to 850 °C. Nowadays for high speed cutting and dry or low lubricant cutting applications, a maximum temperature of about 1100 °C [J.L. Endrino, G.S. Fox-Rabinovich, A. Reiter, S.V. Veldhuis, R. Escobar Galindo, J.M. Albella, J.F. Marco; Surface & Coatings Technology 201 (2007) 4505–4511.] is allowed without a decrease in the hardness of the coated layer. Aluminium–Chromium–Nitride (AlCrN)-hard material coatings are one system with this extended operation conditions because of its high resistance to oxidation. A further improvement of AlCrN-Thin Film coatings will be shown through parallel operations of the hollow cathode (HC) plasma sources with the arc evaporation sources. By means of optical emission spectroscopy (OES) measurements, it can be demonstrated that the additional hollow cathode plasma provides an increase in the amount of excitation and ionisation degree of the evaporated aluminium and chromium in the advanced AlCrN deposition process. How effectively this additional HC-plasma influences the AlCrN-Thin Film properties, will be demonstrated.
M Holzherr - One of the best experts on this subject based on the ideXlab platform.
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influence of hollow cathode plasma on alcrn Thin Film deposition with vacuum arc evaporation sources
Surface & Coatings Technology, 2008Co-Authors: M Holzherr, M Falz, T SchmidtAbstract:Abstract In order to provide sufficient wear protection on tools, which supports to increase productivity in the manufacturing processes, the substrates can be coated with different hard material layers. High hardness is one important Thin Film Property to get an optimal wear protection of tools, but if the working temperature exceeds an upper limit the hardness of the Thin Film is strongly reduced. The concrete valuation of the decrease in the hardness depends on the coating materials. For the standard TiAlN-coating, the maximum operating temperature conditions is therefore limited to 850 °C. Nowadays for high speed cutting and dry or low lubricant cutting applications, a maximum temperature of about 1100 °C [J.L. Endrino, G.S. Fox-Rabinovich, A. Reiter, S.V. Veldhuis, R. Escobar Galindo, J.M. Albella, J.F. Marco; Surface & Coatings Technology 201 (2007) 4505–4511.] is allowed without a decrease in the hardness of the coated layer. Aluminium–Chromium–Nitride (AlCrN)-hard material coatings are one system with this extended operation conditions because of its high resistance to oxidation. A further improvement of AlCrN-Thin Film coatings will be shown through parallel operations of the hollow cathode (HC) plasma sources with the arc evaporation sources. By means of optical emission spectroscopy (OES) measurements, it can be demonstrated that the additional hollow cathode plasma provides an increase in the amount of excitation and ionisation degree of the evaporated aluminium and chromium in the advanced AlCrN deposition process. How effectively this additional HC-plasma influences the AlCrN-Thin Film properties, will be demonstrated.
M Falz - One of the best experts on this subject based on the ideXlab platform.
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influence of hollow cathode plasma on alcrn Thin Film deposition with vacuum arc evaporation sources
Surface & Coatings Technology, 2008Co-Authors: M Holzherr, M Falz, T SchmidtAbstract:Abstract In order to provide sufficient wear protection on tools, which supports to increase productivity in the manufacturing processes, the substrates can be coated with different hard material layers. High hardness is one important Thin Film Property to get an optimal wear protection of tools, but if the working temperature exceeds an upper limit the hardness of the Thin Film is strongly reduced. The concrete valuation of the decrease in the hardness depends on the coating materials. For the standard TiAlN-coating, the maximum operating temperature conditions is therefore limited to 850 °C. Nowadays for high speed cutting and dry or low lubricant cutting applications, a maximum temperature of about 1100 °C [J.L. Endrino, G.S. Fox-Rabinovich, A. Reiter, S.V. Veldhuis, R. Escobar Galindo, J.M. Albella, J.F. Marco; Surface & Coatings Technology 201 (2007) 4505–4511.] is allowed without a decrease in the hardness of the coated layer. Aluminium–Chromium–Nitride (AlCrN)-hard material coatings are one system with this extended operation conditions because of its high resistance to oxidation. A further improvement of AlCrN-Thin Film coatings will be shown through parallel operations of the hollow cathode (HC) plasma sources with the arc evaporation sources. By means of optical emission spectroscopy (OES) measurements, it can be demonstrated that the additional hollow cathode plasma provides an increase in the amount of excitation and ionisation degree of the evaporated aluminium and chromium in the advanced AlCrN deposition process. How effectively this additional HC-plasma influences the AlCrN-Thin Film properties, will be demonstrated.