The Experts below are selected from a list of 16848 Experts worldwide ranked by ideXlab platform
K J Malloy - One of the best experts on this subject based on the ideXlab platform.
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low Threshold Current Density 1 3 μm inas quantum dot lasers with the dots in a well dwell structure
IEEE Photonics Technology Letters, 2000Co-Authors: A Stintz, L F Lester, G T Liu, K J MalloyAbstract:The wavelength of InAs quantum dots in an In/sub 0.15/Ga/sub 0.85/As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-/spl mu/m. The quantum dot lasing wavelength is sensitive to growth conditions and sample thermal history resulting in blue shifts as much as 73 nm. The room temperature Threshold Current Density is 42.6 A cm/sup -2/ for 7.8-mm cavity length cleaved facet lasers under pulsed operation.
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very low Threshold Current Density room temperature continuous wave lasing from a single layer inas quantum dot laser
IEEE Photonics Technology Letters, 2000Co-Authors: Xiaodong Huang, G T Liu, A Stintz, C P Hains, J Cheng, K J MalloyAbstract:Continuous-wave (CW) lasing operation with a very low Threshold Current Density (J/sub th/=32.5 A/cm/sup 2/) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state with an emission wavelength of 1.25 /spl mu/m when the cavity length is longer than 4.2 mm. For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40/spl deg/C, with a characteristic temperature T/sub 0/ of 41 K near room temperature. Lasers with a 20 /spl mu/m stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated).
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extremely low room temperature Threshold Current Density diode lasers using inas dots in in0 15ga0 85as quantum well
Electronics Letters, 1999Co-Authors: G T Liu, A Stintz, K J Malloy, L F LesterAbstract:The lowest room-temperature Threshold Current Density, 26 A/cm/sup 2/, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In/sub 0.15/Ga/sub 0.85/As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 /spl mu/m.
A Stintz - One of the best experts on this subject based on the ideXlab platform.
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low Threshold Current Density 1 3 μm inas quantum dot lasers with the dots in a well dwell structure
IEEE Photonics Technology Letters, 2000Co-Authors: A Stintz, L F Lester, G T Liu, K J MalloyAbstract:The wavelength of InAs quantum dots in an In/sub 0.15/Ga/sub 0.85/As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-/spl mu/m. The quantum dot lasing wavelength is sensitive to growth conditions and sample thermal history resulting in blue shifts as much as 73 nm. The room temperature Threshold Current Density is 42.6 A cm/sup -2/ for 7.8-mm cavity length cleaved facet lasers under pulsed operation.
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very low Threshold Current Density room temperature continuous wave lasing from a single layer inas quantum dot laser
IEEE Photonics Technology Letters, 2000Co-Authors: Xiaodong Huang, G T Liu, A Stintz, C P Hains, J Cheng, K J MalloyAbstract:Continuous-wave (CW) lasing operation with a very low Threshold Current Density (J/sub th/=32.5 A/cm/sup 2/) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state with an emission wavelength of 1.25 /spl mu/m when the cavity length is longer than 4.2 mm. For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40/spl deg/C, with a characteristic temperature T/sub 0/ of 41 K near room temperature. Lasers with a 20 /spl mu/m stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated).
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extremely low room temperature Threshold Current Density diode lasers using inas dots in in0 15ga0 85as quantum well
Electronics Letters, 1999Co-Authors: G T Liu, A Stintz, K J Malloy, L F LesterAbstract:The lowest room-temperature Threshold Current Density, 26 A/cm/sup 2/, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In/sub 0.15/Ga/sub 0.85/As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 /spl mu/m.
G T Liu - One of the best experts on this subject based on the ideXlab platform.
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low Threshold Current Density 1 3 μm inas quantum dot lasers with the dots in a well dwell structure
IEEE Photonics Technology Letters, 2000Co-Authors: A Stintz, L F Lester, G T Liu, K J MalloyAbstract:The wavelength of InAs quantum dots in an In/sub 0.15/Ga/sub 0.85/As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-/spl mu/m. The quantum dot lasing wavelength is sensitive to growth conditions and sample thermal history resulting in blue shifts as much as 73 nm. The room temperature Threshold Current Density is 42.6 A cm/sup -2/ for 7.8-mm cavity length cleaved facet lasers under pulsed operation.
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very low Threshold Current Density room temperature continuous wave lasing from a single layer inas quantum dot laser
IEEE Photonics Technology Letters, 2000Co-Authors: Xiaodong Huang, G T Liu, A Stintz, C P Hains, J Cheng, K J MalloyAbstract:Continuous-wave (CW) lasing operation with a very low Threshold Current Density (J/sub th/=32.5 A/cm/sup 2/) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state with an emission wavelength of 1.25 /spl mu/m when the cavity length is longer than 4.2 mm. For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40/spl deg/C, with a characteristic temperature T/sub 0/ of 41 K near room temperature. Lasers with a 20 /spl mu/m stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated).
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extremely low room temperature Threshold Current Density diode lasers using inas dots in in0 15ga0 85as quantum well
Electronics Letters, 1999Co-Authors: G T Liu, A Stintz, K J Malloy, L F LesterAbstract:The lowest room-temperature Threshold Current Density, 26 A/cm/sup 2/, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In/sub 0.15/Ga/sub 0.85/As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 /spl mu/m.
P D Dapkus - One of the best experts on this subject based on the ideXlab platform.
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low Threshold Current Density gaassb quantum well qw lasers grown by metal organic chemical vapour deposition on gaas substrates
Electronics Letters, 2000Co-Authors: Sangwan Ryu, P D DapkusAbstract:Low Threshold Current Density GaAsSb/GaAs quantum well (QW) lasers were realised by metal organic chemical vapour deposition. A record low Threshold Current Density of 190 A/cm/sup 2/ was obtained from a 2.2 mm long broad area laser with the emission wavelength of 1.19 /spl mu/m.
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fabrication characterization and analysis of low Threshold Current Density 1 55 spl mu m strained quantum well lasers
IEEE Journal of Quantum Electronics, 1996Co-Authors: A. Mathur, P D DapkusAbstract:Tertiarybutylarsine and tertiarybutylphosphine are less hazardous alternatives to arsine and phosphine as group V sources for crystal growth of In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/ alloys by metalorganic chemical vapor deposition. Compressive and tensile-strained quantum-well lasers emitting at 1.55 /spl mu/m have been fabricated using these sources. Threshold Current Density as low as 93 A/cm/sup 2/, transparency Current Density as low as 38 A/cm/sup 2/ and internal efficiency of 91% were obtained for 1.5% compressive-strained single quantum-well lasers. These devices represent the best lasers emitting at this wavelength that have been reported in the literature. An analysis of some of the characteristics of these devices such as transparency Current, differential gain and nonradiative recombination is also presented in this paper.
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Low-Threshold-Current-Density 1.5 mu m lasers using compressively strained InGaAsP quantum wells
IEEE Photonics Technology Letters, 1992Co-Authors: J.s. Osinski, P. Grodzinski, A. Mathur, P D DapkusAbstract:A low-Threshold Current Density (J/sub th/) of 140 A/cm/sup 2/ for broad-area 1.5- mu m semiconductor lasers with uncoated facets is demonstrated at a cavity length of 3.5 mm. This was achieved by the use of a single InGaAsP quantum well (QW) of 1.8% compressive strain inside a step-graded InGaAsP waveguide region. Low-cavity losses of 3.5 cm/sup -1/ and a relatively wide quantum well as compared to InGaAs wells of equivalent strain contribute to this high performance. Double QW devices of 2 mm length showed Threshold Current densities of 241 A/cm/sup 2/. Quaternary single and double QWs of similar width but only 0. 9% strain gave slightly higher Threshold Current Density values, but allowed growth of a 4 QW structure with a J/sub th/ of 324 A/cm/sup 2/ at L=1.5 mm.
L F Lester - One of the best experts on this subject based on the ideXlab platform.
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740 nm inp gainp quantum dot laser with 190 a cm sup 2 room temperature Threshold Current Density
Electronics Letters, 2005Co-Authors: Julie Lutti, P M Smowton, A B Krysa, G M Lewis, J S Roberts, P A Houston, Y C Xin, L F LesterAbstract:InP quantum-dot lasers grown on GaAs substrates and emitting in the 730-740 nm band with Threshold Current Density as low as 190 A cm/sup -2/ for a 2000 /spl mu/m-long device with uncoated facets are reported.
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low Threshold Current Density 1 3 μm inas quantum dot lasers with the dots in a well dwell structure
IEEE Photonics Technology Letters, 2000Co-Authors: A Stintz, L F Lester, G T Liu, K J MalloyAbstract:The wavelength of InAs quantum dots in an In/sub 0.15/Ga/sub 0.85/As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-/spl mu/m. The quantum dot lasing wavelength is sensitive to growth conditions and sample thermal history resulting in blue shifts as much as 73 nm. The room temperature Threshold Current Density is 42.6 A cm/sup -2/ for 7.8-mm cavity length cleaved facet lasers under pulsed operation.
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extremely low room temperature Threshold Current Density diode lasers using inas dots in in0 15ga0 85as quantum well
Electronics Letters, 1999Co-Authors: G T Liu, A Stintz, K J Malloy, L F LesterAbstract:The lowest room-temperature Threshold Current Density, 26 A/cm/sup 2/, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In/sub 0.15/Ga/sub 0.85/As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 /spl mu/m.
