The Experts below are selected from a list of 38871 Experts worldwide ranked by ideXlab platform
Peng Zhang - One of the best experts on this subject based on the ideXlab platform.
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a two dimensional tunneling resistance Transmission Line Model for nanoscale parallel electrical contacts
Scientific Reports, 2019Co-Authors: Sneha Banerjee, J W Luginsland, Peng ZhangAbstract:Contact resistance and current crowding are important to nanoscale electrical contacts. In this paper, we present a self-consistent Model to characterize partially overlapped parallel contacts with varying specific contact resistivity along the contact length. For parallel tunneling contacts formed between contacting members separated by a thin insulating gap, we examine the local voltage-dependent variation of potential barrier height and tunneling current along the contact length, by solving the lumped circuit Transmission Line Model (TLM) equations coupled with the tunneling current self consistently. The current and voltage distribution along the parallel tunneling contacts and their overall contact resistance are analyzed in detail, for various input voltage, electrical contact dimension, and material properties (i.e. work function, sheet resistance of the contact members, and permittivity of the insulating layer). It is found the existing one-dimensional (1D) tunneling junction Models become less reliable when the tunneling layer thickness becomes smaller or the applied voltage becomes larger. In these regimes, the proposed self-consistent Model may provide a more accurate evaluation of the parallel tunneling contacts. For the special case of constant ohmic specific contact resistivity along the contact length, our theory has been spot-checked with finite element method (FEM) based numerical simulations. This work provides insights on the design, and potential engineering, of nanoscale electrical contacts with controlled current distribution and contact resistance via engineered spatially varying contact layer properties and geometry.
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a two dimensional tunneling resistance Transmission Line Model for nanoscale parallel electrical contacts
arXiv: Applied Physics, 2019Co-Authors: Sneha Banerjee, J W Luginsland, Peng ZhangAbstract:Contact resistance and current crowding are important to nanoscale electrical contacts. In this paper, we present a self-consistent Model to characterize partially overlapped parallel contacts with varying specific contact resistivity along the contact length. For parallel tunneling contacts formed between contacting members separated by a thin insulating gap, we examine the local voltage-dependent variation of potential barrier height and tunneling current along the contact length, by solving the lumped circuit Transmission Line Model (TLM) equations coupled with the tunneling current self consistently. The current and voltage distribution along the parallel tunneling contacts and their overall contact resistance are analyzed in detail, for various input voltage, electrical contact dimension, and material properties (i.e. work function, sheet resistance of the contact members, and permittivity of the insulating layer). It is found the existing one-dimensional (1D) tunneling junction Models become less reliable when the tunneling layer thickness becomes smaller or the applied voltage becomes larger. In these regimes, the proposed self-consistent Model may provide a more accurate evaluation of the parallel tunneling contacts. This work provides insights on the design, and potential engineering, of nanoscale electrical contacts with controlled current distribution and contact resistance via engineered spatially varying contact layer properties and geometry.
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an exact field solution of contact resistance and comparison with the Transmission Line Model
Applied Physics Letters, 2014Co-Authors: Peng Zhang, Y Y LauAbstract:Based on the exact solution of the electric field, the contact resistance is calculated and compared with the widely used lumped-circuit Transmission Line Model. Our Model fully accounts for the spreading resistance, and is applicable to arbitrary contact size, film thickness, and resistivity in different parts forming the contact. The regimes dominated by the specific contact resistance or by the spreading resistance are identified and compared with experimental data.
K Barla - One of the best experts on this subject based on the ideXlab platform.
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multiring circular Transmission Line Model for ultralow contact resistivity extraction
IEEE Electron Device Letters, 2015Co-Authors: Marc Schaekers, T Schram, N Collaert, Naoto Horiguchi, K Barla, E Rosseel, Koen Martens, S Demuynck, Kristin De Meyerieee, Aaron TheanAbstract:Accurate determination of contact resistivities ( ${\rho_{c}}$ ) below $1 \times 10^{-8}\Omega \cdot \text {cm}^{2}$ is challenging. Among the frequently applied Transmission Line Models (TLMs), circular TLM (CTLM) has a simple process flow, while refined TLM (RTLM) has a high $\rho _{c}$ accuracy at the expense of a more complex fabrication. In this letter, we will present a novel Model—multiring CTLM (MR-CTLM) , which combines the advantages of a simple process and a high $\rho _{c}$ extraction resolution. We fabricated ultralow- $\rho _{c}$ Ti/n-Si contacts and demonstrated the capability of MR-CTLM to extract the $\rho _{c}$ as low as $6.2 \times 10^{-9}~\Omega \cdot {\rm cm}^{2}$ with high precision.
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a simplified method for circular Transmission Line Model simulation and ultralow contact resistivity extraction
IEEE Electron Device Letters, 2014Co-Authors: Marc Schaekers, T Schram, N Collaert, Kristin De Meyer, Naoto Horiguchi, Aaron Thean, K BarlaAbstract:The metal resistance in the Transmission Line Model (TLM) structures creates a serious obstacle to determine precisely the intrinsic contact resistivity. To tackle this problem, we propose a new Model, the lump Model, to evaluate the metal resistance influence in both TLM and circular TLM (CTLM) test structures. In this letter, we demonstrate the high simplicity, great robustness, and flexibility of the lump Model. The previous reported contact resistivity values extracted with CTLM are usually above 1 χ 10 -7 Ω · cm 2 because the metal resistance impact is commonly neglected. This is the first time that the role of the metal in CTLM is appropriately analyzed. Low contact resistivity, 3.6χ10 -8 Ω · cm 2 , of standard NiSi/n-Si contact has been extracted and this shows the high sensitivity of this method.
Aaron Thean - One of the best experts on this subject based on the ideXlab platform.
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multiring circular Transmission Line Model for ultralow contact resistivity extraction
IEEE Electron Device Letters, 2015Co-Authors: Marc Schaekers, T Schram, N Collaert, Naoto Horiguchi, K Barla, E Rosseel, Koen Martens, S Demuynck, Kristin De Meyerieee, Aaron TheanAbstract:Accurate determination of contact resistivities ( ${\rho_{c}}$ ) below $1 \times 10^{-8}\Omega \cdot \text {cm}^{2}$ is challenging. Among the frequently applied Transmission Line Models (TLMs), circular TLM (CTLM) has a simple process flow, while refined TLM (RTLM) has a high $\rho _{c}$ accuracy at the expense of a more complex fabrication. In this letter, we will present a novel Model—multiring CTLM (MR-CTLM) , which combines the advantages of a simple process and a high $\rho _{c}$ extraction resolution. We fabricated ultralow- $\rho _{c}$ Ti/n-Si contacts and demonstrated the capability of MR-CTLM to extract the $\rho _{c}$ as low as $6.2 \times 10^{-9}~\Omega \cdot {\rm cm}^{2}$ with high precision.
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a simplified method for circular Transmission Line Model simulation and ultralow contact resistivity extraction
IEEE Electron Device Letters, 2014Co-Authors: Marc Schaekers, T Schram, N Collaert, Kristin De Meyer, Naoto Horiguchi, Aaron Thean, K BarlaAbstract:The metal resistance in the Transmission Line Model (TLM) structures creates a serious obstacle to determine precisely the intrinsic contact resistivity. To tackle this problem, we propose a new Model, the lump Model, to evaluate the metal resistance influence in both TLM and circular TLM (CTLM) test structures. In this letter, we demonstrate the high simplicity, great robustness, and flexibility of the lump Model. The previous reported contact resistivity values extracted with CTLM are usually above 1 χ 10 -7 Ω · cm 2 because the metal resistance impact is commonly neglected. This is the first time that the role of the metal in CTLM is appropriately analyzed. Low contact resistivity, 3.6χ10 -8 Ω · cm 2 , of standard NiSi/n-Si contact has been extracted and this shows the high sensitivity of this method.
Marc Schaekers - One of the best experts on this subject based on the ideXlab platform.
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multiring circular Transmission Line Model for ultralow contact resistivity extraction
IEEE Electron Device Letters, 2015Co-Authors: Marc Schaekers, T Schram, N Collaert, Naoto Horiguchi, K Barla, E Rosseel, Koen Martens, S Demuynck, Kristin De Meyerieee, Aaron TheanAbstract:Accurate determination of contact resistivities ( ${\rho_{c}}$ ) below $1 \times 10^{-8}\Omega \cdot \text {cm}^{2}$ is challenging. Among the frequently applied Transmission Line Models (TLMs), circular TLM (CTLM) has a simple process flow, while refined TLM (RTLM) has a high $\rho _{c}$ accuracy at the expense of a more complex fabrication. In this letter, we will present a novel Model—multiring CTLM (MR-CTLM) , which combines the advantages of a simple process and a high $\rho _{c}$ extraction resolution. We fabricated ultralow- $\rho _{c}$ Ti/n-Si contacts and demonstrated the capability of MR-CTLM to extract the $\rho _{c}$ as low as $6.2 \times 10^{-9}~\Omega \cdot {\rm cm}^{2}$ with high precision.
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a simplified method for circular Transmission Line Model simulation and ultralow contact resistivity extraction
IEEE Electron Device Letters, 2014Co-Authors: Marc Schaekers, T Schram, N Collaert, Kristin De Meyer, Naoto Horiguchi, Aaron Thean, K BarlaAbstract:The metal resistance in the Transmission Line Model (TLM) structures creates a serious obstacle to determine precisely the intrinsic contact resistivity. To tackle this problem, we propose a new Model, the lump Model, to evaluate the metal resistance influence in both TLM and circular TLM (CTLM) test structures. In this letter, we demonstrate the high simplicity, great robustness, and flexibility of the lump Model. The previous reported contact resistivity values extracted with CTLM are usually above 1 χ 10 -7 Ω · cm 2 because the metal resistance impact is commonly neglected. This is the first time that the role of the metal in CTLM is appropriately analyzed. Low contact resistivity, 3.6χ10 -8 Ω · cm 2 , of standard NiSi/n-Si contact has been extracted and this shows the high sensitivity of this method.
M A Uman - One of the best experts on this subject based on the ideXlab platform.
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return stroke Transmission Line Model for stroke speed near and equal that of light
Geophysical Research Letters, 2001Co-Authors: Rajeev Thottappillil, J Schoene, M A UmanAbstract:Assuming that the lightning return stroke Transmission-Line Model is applicable, we derive an expression for the return-stroke magnetic field for an arbitrary return stroke speed and from that expression show that for a return stroke speed equal to the speed of light c the electric and magnetic field waveforms at all points in space and the current waveform are identical. Recent measurements indicate that the electric field and current waveforms are similar for about 100 ns for triggered lightning return strokes, potentially implying that the initial return stroke speed is actually near c for that time, that is, for the bottom 30 m or so of the triggered lightning channel. While for the Transmission-Line Model the current waveform and the total electric field waveform are identical for a return stroke speed of c, we show that each of the three individual components (electrostatic, induction, and radiation) that comprise the total field varies significantly with distance.
