The Experts below are selected from a list of 9939 Experts worldwide ranked by ideXlab platform
Takashi Fuyuki - One of the best experts on this subject based on the ideXlab platform.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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annual output estimation of concentrator photovoltaic systems using high efficiency ingap ingaas ge Triple Junction solar cells based on experimental solar cell s characteristics and field test meteorological data
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge Triple-Junction solar cells under concentration were evaluated. For these solar cells, conversion efficiency ( η ) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency Triple-Junction cell was estimated utilizing the experimental solar cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.
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evaluation of temperature characteristics of high efficiency ingap ingaas ge Triple Junction solar cells under concentration
Solar Energy Materials and Solar Cells, 2005Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge Triple-Junction cells. Also, single-Junction cells that had the similar structure to the subcells in the Triple-Junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of Voc of the InGaP/InGaAs/Ge Triple-Junction solar cell (dVoc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-Junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.
Kensuke Nishioka - One of the best experts on this subject based on the ideXlab platform.
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detailed analysis of temperature characteristics of an ingap ingaas ge Triple Junction solar cell
Journal of Electronic Materials, 2010Co-Authors: Kensuke Nishioka, Tsuyoshi Sueto, Masaki Uchida, Yasuyuki OtaAbstract:Temperature characteristics of an InGaP/InGaAs/Ge Triple-Junction solar cell were analyzed in detail using an equivalent circuit calculation. The current–voltage (I–V) characteristics of single-Junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. Fitting of I–V curves between measured and calculated data was carried out, and the diode parameters and temperature exponents of the single-Junction solar cells were extracted. The parameters for each single-Junction solar cell were used in the equivalent circuit model for the Triple-Junction solar cell, and calculations of solar cell performance were carried out. Measured and calculated results of the I–V characteristics at various temperatures agreed well.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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annual output estimation of concentrator photovoltaic systems using high efficiency ingap ingaas ge Triple Junction solar cells based on experimental solar cell s characteristics and field test meteorological data
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge Triple-Junction solar cells under concentration were evaluated. For these solar cells, conversion efficiency ( η ) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency Triple-Junction cell was estimated utilizing the experimental solar cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.
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evaluation of temperature characteristics of high efficiency ingap ingaas ge Triple Junction solar cells under concentration
Solar Energy Materials and Solar Cells, 2005Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge Triple-Junction cells. Also, single-Junction cells that had the similar structure to the subcells in the Triple-Junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of Voc of the InGaP/InGaAs/Ge Triple-Junction solar cell (dVoc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-Junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.
Takaaki Agui - One of the best experts on this subject based on the ideXlab platform.
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current voltage and spectral response characteristics of surface activated bonding based ingap gaas si hybrid Triple Junction cells
Japanese Journal of Applied Physics, 2015Co-Authors: Naoteru Shigekawa, Takaaki Agui, Ryusuke Onitsuka, Jianbo Liang, Hiroyuki JusoAbstract:We measured the current–voltage (I–V) and spectral-response characteristics of InGaP/GaAs/Si hybrid Triple-Junction cells that were fabricated by using surface-activated bonding methods. We found by spectral response measurements that the current generated in the Si-based bottom cell was lower than those in the top and middle cells under the conditions of an air mass of 1.5G and one sun. Furthermore we observed a discrepancy between the short-circuit current, which was obtained by subtracting the estimated contribution of Si ledges surrounding InGaP/GaAs mesas to the I–V characteristics, and the results of spectral response measurements. One possible model for explaining the discrepancy was discussed on the basis of the electrical coupling scheme between subcells. The intrinsic conversion efficiency of a 5 × 5 mm2 Triple-Junction cell was crudely estimated to be ~26% by compensating for the shadow loss as well as subtracting the contribution of Si ledges.
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development of ingap gaas ingaas inverted Triple Junction concentrator solar cells
9TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS: CPV-9, 2013Co-Authors: Kazuaki Sasaki, Takaaki Agui, Ryusuke Onitsuka, Katsuya Nakaido, Naoki Takahashi, Tatsuya TakamotoAbstract:We have been developing InGaP/GaAs/InGaAs inverted Triple Junction solar cells for a concentrator application with a target efficiency of 45%. We reduced the series resistance in the cells. As a result we improved the maximum concentration ratio up to around 300-suns and obtained an efficiency of 43.5% as an official value measured by Fraunhofer Institute for Solar Energy Systems. Recently we achieved an efficiency of around 44% in house measurement by improving short current density (Jsc) in a cell by reduction of shadow loss. We performed reliability tests on receivers with inverted Triple Junction solar cells. No obvious degradation was observed in open circuit voltage and fill factor measured under 150-suns after 1,500h exposure to 85 degree Celsius and 85% humidity atmosphere. In addition improvement of 1-sun efficiency up to 37.7% was confirmed in a cell with 1.047cm2 aperture area.
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world s highest efficiency Triple Junction solar cells fabricated by inverted layers transfer process
Photovoltaic Specialists Conference, 2010Co-Authors: Tatsuya Takamoto, Takaaki Agui, Hiroyuki Juso, Atsushi Yoshida, Katsuya Nakaido, Kazuaki Sasaki, Kazuyo Nakamora, Hiroshi Yamaguchi, Tomoya Kodama, Hidetoshi WashioAbstract:A world record-setting efficiency of 35.8% at AM1.5G (x1) has been demonstrated by an InGaP (1.88 eV)/GaAs/InGaAs (0.97 eV) Triple-Junction solar cell fabricated using the inverted layer transfer process. Lattice-matched top and middle cells are grown first. Then, a lattice-mismatched bottom cell is grown to attain good crystal quality for the top and middle cells. A large stress caused by the increasing lattice constant is successfully released in a buffer layer between the middle and bottom cells, and a high Voc close to Eg/q-0.4 V has been achieved for the lattice-mismatched InGaAs bottom cell. The high Voc of over 3.0 V contributed to the record efficiency. After epitaxial growth, the cell layers on the GaAs substrate are transferred on a handling substrate. As the cell layer is transferred onto a film substrate, a lightweight flexible cell can be fabricated. New Triple-Junction cells will be applied to a flexible module, called a “space solar sheet,” after optimization of the cell structure for the AM0 spectrum and radiation tolerance. A heat-resistant concentrator cell can be obtained by transferring the cell layer onto a heat sink substrate. A terrestrial concentrator cell using the new structure is also attractive, because a high efficiency of close to 45% can be expected.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
Yukiharu Uraoka - One of the best experts on this subject based on the ideXlab platform.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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annual output estimation of concentrator photovoltaic systems using high efficiency ingap ingaas ge Triple Junction solar cells based on experimental solar cell s characteristics and field test meteorological data
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge Triple-Junction solar cells under concentration were evaluated. For these solar cells, conversion efficiency ( η ) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency Triple-Junction cell was estimated utilizing the experimental solar cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.
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evaluation of temperature characteristics of high efficiency ingap ingaas ge Triple Junction solar cells under concentration
Solar Energy Materials and Solar Cells, 2005Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge Triple-Junction cells. Also, single-Junction cells that had the similar structure to the subcells in the Triple-Junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of Voc of the InGaP/InGaAs/Ge Triple-Junction solar cell (dVoc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-Junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.
M Kaneiwa - One of the best experts on this subject based on the ideXlab platform.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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evaluation of ingap ingaas ge Triple Junction solar cell and optimization of solar cell s structure focusing on series resistance for high efficiency concentrator photovoltaic systems
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Tatsuya Takamoto, Takashi FuyukiAbstract:The series resistance of an InGaP/InGaAs/Ge Triple-Junction solar cell was evaluated in detail. Series resistance components such as electrode resistance, tunnel Junction resistance and lateral resistance between electrodes were estimated separately. The characteristics of the Triple-Junction solar cell under concentrated light were evaluated by equivalent circuit calculation with a simulation program with integrated circuit emphasis (SPICE). By equivalent circuit calculation, the optimization of cell designs was performed, focusing on series resistance and cell current in order to realize high-efficiency concentrator cells.
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annual output estimation of concentrator photovoltaic systems using high efficiency ingap ingaas ge Triple Junction solar cells based on experimental solar cell s characteristics and field test meteorological data
Solar Energy Materials and Solar Cells, 2006Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract The temperature dependences of the electrical characteristics of InGaP/InGaAs/Ge Triple-Junction solar cells under concentration were evaluated. For these solar cells, conversion efficiency ( η ) decreased with increasing temperature, and increased with increasing concentration ratio owing to an increase in open-circuit voltage. The decrease in η with increasing temperature decreases with increasing concentration ratio. Moreover, the annual output of a concentrator system with a high-efficiency Triple-Junction cell was estimated utilizing the experimental solar cell's characteristics obtained in this study and field-test meteorological data collected for 1 year at the Nara Institute of Science and Technology, and compared with that of a nonconcentration flat-plate system.
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evaluation of temperature characteristics of high efficiency ingap ingaas ge Triple Junction solar cells under concentration
Solar Energy Materials and Solar Cells, 2005Co-Authors: Kensuke Nishioka, Takaaki Agui, M Kaneiwa, Yukiharu Uraoka, Takashi FuyukiAbstract:Abstract Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge Triple-Junction cells. Also, single-Junction cells that had the similar structure to the subcells in the Triple-Junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of Voc of the InGaP/InGaAs/Ge Triple-Junction solar cell (dVoc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-Junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.