The Experts below are selected from a list of 24 Experts worldwide ranked by ideXlab platform
Pablo Bianucci - One of the best experts on this subject based on the ideXlab platform.
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rolled up 1 5 µm inas quantum dot Tube Lasers and integrated nanophotonic circuits on si
Photonics Society Summer Topical Meeting Series, 2013Co-Authors: M H T Dastjerdi, Venkat Veerasubramanian, Zhaobing Tian, Pablo Bianucci, Andrew G Kirk, P J Poole, Qiuhang Zhong, David V. PlantAbstract:In this paper, rolled-up semiconductor Tube optical cavities, formed when coherently strained nanomembranes are selectively released from the host substrate, have emerged as a promising approach to realize high performance Lasers on Si. 1-3 We have investigated the design, fabrication, and characterization of InAs/InGaAsP quantum dot Tube Lasers. We report the first demonstration of semiconductor Tube Lasers that can operate at the telecom wavelength (- 1.5 μm). Such devices can exhibit an extremely low threshold (- 1.26 μW) and multiple emission wavelengths. The direct integration of quantum dot Tube devices with Si waveguides has also been demonstrated.
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self organized inas ingaasp quantum dot Tube Lasers
Applied Physics Letters, 2012Co-Authors: Pablo Bianucci, Shouvik Mukherjee, Hadi Tavakoli M Dastjerdi, P J PooleAbstract:We report the achievement of a semiconductor Tube laser that can operate in the optical communication wavelength range for applications in the emerging Si-photonics. Such nanoscale devices are fabricated from self-organized InAs/InGaAsP quantum dot nanomembranes through a strain-driven self-rolling mechanism using standard photolithography process. Under continuous wave optical pumping, the devices exhibit an ultralow lasing threshold of ∼1.26 μW at 82 K, with multiple emission wavelengths in the S band of optical communications. The spontaneous emission coupling factor and Purcell factor are estimated to be ∼0.30 and ∼4.8, respectively.
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self organized inas quantum dot Tube Lasers and integrated optoelectronics on si
Proceedings of SPIE, 2011Co-Authors: Zetian Mi, David V. Plant, Venkat Veerasubramanian, Zhaobing Tian, Pablo Bianucci, Andrew G Kirk, Feng Li, P J PooleAbstract:We report on the fabrication, characterization and integration of semiconductor microTube Lasers on silicon. These microTubes are fabricating using standard photolithography techniques on epitaxially grown strained bilayer films, and show remarkable spectral properties attributable to whispering-gallery-mode type optical resonances. We have demonstrated coherent emission coupled to the optical microcavity modes in both GaAs/InGaAs and InGaAsP microTubes with embedded quantum dots. Furthermore, the GaAs/InGaAs microTubes have shown room temperature, continuous wave lasing. The microTubes can be transferred to any foreign substrate without affecting their optical properties. Work is in progress to couple the Tubes with integrated silicon-on-insulator waveguides.
P J Poole - One of the best experts on this subject based on the ideXlab platform.
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rolled up 1 5 µm inas quantum dot Tube Lasers and integrated nanophotonic circuits on si
Photonics Society Summer Topical Meeting Series, 2013Co-Authors: M H T Dastjerdi, Venkat Veerasubramanian, Zhaobing Tian, Pablo Bianucci, Andrew G Kirk, P J Poole, Qiuhang Zhong, David V. PlantAbstract:In this paper, rolled-up semiconductor Tube optical cavities, formed when coherently strained nanomembranes are selectively released from the host substrate, have emerged as a promising approach to realize high performance Lasers on Si. 1-3 We have investigated the design, fabrication, and characterization of InAs/InGaAsP quantum dot Tube Lasers. We report the first demonstration of semiconductor Tube Lasers that can operate at the telecom wavelength (- 1.5 μm). Such devices can exhibit an extremely low threshold (- 1.26 μW) and multiple emission wavelengths. The direct integration of quantum dot Tube devices with Si waveguides has also been demonstrated.
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self organized inas ingaasp quantum dot Tube Lasers
Applied Physics Letters, 2012Co-Authors: Pablo Bianucci, Shouvik Mukherjee, Hadi Tavakoli M Dastjerdi, P J PooleAbstract:We report the achievement of a semiconductor Tube laser that can operate in the optical communication wavelength range for applications in the emerging Si-photonics. Such nanoscale devices are fabricated from self-organized InAs/InGaAsP quantum dot nanomembranes through a strain-driven self-rolling mechanism using standard photolithography process. Under continuous wave optical pumping, the devices exhibit an ultralow lasing threshold of ∼1.26 μW at 82 K, with multiple emission wavelengths in the S band of optical communications. The spontaneous emission coupling factor and Purcell factor are estimated to be ∼0.30 and ∼4.8, respectively.
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self organized inas quantum dot Tube Lasers and integrated optoelectronics on si
Proceedings of SPIE, 2011Co-Authors: Zetian Mi, David V. Plant, Venkat Veerasubramanian, Zhaobing Tian, Pablo Bianucci, Andrew G Kirk, Feng Li, P J PooleAbstract:We report on the fabrication, characterization and integration of semiconductor microTube Lasers on silicon. These microTubes are fabricating using standard photolithography techniques on epitaxially grown strained bilayer films, and show remarkable spectral properties attributable to whispering-gallery-mode type optical resonances. We have demonstrated coherent emission coupled to the optical microcavity modes in both GaAs/InGaAs and InGaAsP microTubes with embedded quantum dots. Furthermore, the GaAs/InGaAs microTubes have shown room temperature, continuous wave lasing. The microTubes can be transferred to any foreign substrate without affecting their optical properties. Work is in progress to couple the Tubes with integrated silicon-on-insulator waveguides.
David V. Plant - One of the best experts on this subject based on the ideXlab platform.
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rolled up 1 5 µm inas quantum dot Tube Lasers and integrated nanophotonic circuits on si
Photonics Society Summer Topical Meeting Series, 2013Co-Authors: M H T Dastjerdi, Venkat Veerasubramanian, Zhaobing Tian, Pablo Bianucci, Andrew G Kirk, P J Poole, Qiuhang Zhong, David V. PlantAbstract:In this paper, rolled-up semiconductor Tube optical cavities, formed when coherently strained nanomembranes are selectively released from the host substrate, have emerged as a promising approach to realize high performance Lasers on Si. 1-3 We have investigated the design, fabrication, and characterization of InAs/InGaAsP quantum dot Tube Lasers. We report the first demonstration of semiconductor Tube Lasers that can operate at the telecom wavelength (- 1.5 μm). Such devices can exhibit an extremely low threshold (- 1.26 μW) and multiple emission wavelengths. The direct integration of quantum dot Tube devices with Si waveguides has also been demonstrated.
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self organized inas quantum dot Tube Lasers and integrated optoelectronics on si
Proceedings of SPIE, 2011Co-Authors: Zetian Mi, David V. Plant, Venkat Veerasubramanian, Zhaobing Tian, Pablo Bianucci, Andrew G Kirk, Feng Li, P J PooleAbstract:We report on the fabrication, characterization and integration of semiconductor microTube Lasers on silicon. These microTubes are fabricating using standard photolithography techniques on epitaxially grown strained bilayer films, and show remarkable spectral properties attributable to whispering-gallery-mode type optical resonances. We have demonstrated coherent emission coupled to the optical microcavity modes in both GaAs/InGaAs and InGaAsP microTubes with embedded quantum dots. Furthermore, the GaAs/InGaAs microTubes have shown room temperature, continuous wave lasing. The microTubes can be transferred to any foreign substrate without affecting their optical properties. Work is in progress to couple the Tubes with integrated silicon-on-insulator waveguides.
Hadi Tavakoli M Dastjerdi - One of the best experts on this subject based on the ideXlab platform.
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self organized inas ingaasp quantum dot Tube Lasers
Applied Physics Letters, 2012Co-Authors: Pablo Bianucci, Shouvik Mukherjee, Hadi Tavakoli M Dastjerdi, P J PooleAbstract:We report the achievement of a semiconductor Tube laser that can operate in the optical communication wavelength range for applications in the emerging Si-photonics. Such nanoscale devices are fabricated from self-organized InAs/InGaAsP quantum dot nanomembranes through a strain-driven self-rolling mechanism using standard photolithography process. Under continuous wave optical pumping, the devices exhibit an ultralow lasing threshold of ∼1.26 μW at 82 K, with multiple emission wavelengths in the S band of optical communications. The spontaneous emission coupling factor and Purcell factor are estimated to be ∼0.30 and ∼4.8, respectively.
Shouvik Mukherjee - One of the best experts on this subject based on the ideXlab platform.
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self organized inas ingaasp quantum dot Tube Lasers
Applied Physics Letters, 2012Co-Authors: Pablo Bianucci, Shouvik Mukherjee, Hadi Tavakoli M Dastjerdi, P J PooleAbstract:We report the achievement of a semiconductor Tube laser that can operate in the optical communication wavelength range for applications in the emerging Si-photonics. Such nanoscale devices are fabricated from self-organized InAs/InGaAsP quantum dot nanomembranes through a strain-driven self-rolling mechanism using standard photolithography process. Under continuous wave optical pumping, the devices exhibit an ultralow lasing threshold of ∼1.26 μW at 82 K, with multiple emission wavelengths in the S band of optical communications. The spontaneous emission coupling factor and Purcell factor are estimated to be ∼0.30 and ∼4.8, respectively.
