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Hideo Hosono - One of the best experts on this subject based on the ideXlab platform.
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degenerate p Type Conductivity in wide gap lacuos1 xsex x 0 1 epitaxial films
Applied Physics Letters, 2003Co-Authors: Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masashiro Hirano, Toshio Kamiya, Hideo HosonoAbstract:Epitaxial films of LaCuOS1−xSex (x=0–1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of ∼50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm2V−1s−1 in LaCuOSe, a comparable value to that of p-Type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2×1020 cm−3, while maintaining the Hall mobility as large as 4.0 cm2V−1s−1. Consequently, a degenerate p-Type electrical conduction with a Conductivity of 140 S cm−1 was achieved.
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band gap engineering band edge emission and p Type Conductivity in wide gap lacuos1 xsex oxychalcogenides
Journal of Applied Physics, 2002Co-Authors: Kazushige Ueda, Hideo HosonoAbstract:The preparation of LaCuOS1−xSex solid solutions (x=0.0, 0.25, 0.5, 0.75, and 1.0) was attempted to control their energy gap and band edge emission energy. X-ray diffraction analysis revealed that the lattice constant of LaCuOS1−xSex increased linearly with increasing x, indicating the formation of a complete solid solution in the LaCuOS–LaCuOSe system. The energy gap estimated from the diffuse reflectance spectra varied continuously from ∼3.1 eV for x=0 to ∼2.8 eV for x=1. The sharp emission near the absorption edge was observed in all samples at room temperature under ultraviolet light irradiation. p-Type electrical conduction in these materials was confirmed by Seebeck measurements, and the Conductivity was enhanced by substitution of Sr for La. These results demonstrated that the formation of the solid solutions enabled band gap engineering in LaCuOS1−xSex oxychalcogenides keeping their band edge emission feature and p-Type Conductivity.
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p Type electrical conduction in transparent thin films of cualo2
Nature, 1997Co-Authors: Hiroshi Kawazoe, Masahiro Yasukawa, Hiroyuki Hyodo, Masaaki Kurita, Hiroshi Yanagi, Hideo HosonoAbstract:Optically transparent oxides tend to be electrical insulators, by virtue of their large electronic bandgap (⩾3.1 eV). The most notable exceptions are doped versions of the oxides In2O3, SnO2 and ZnO—all n-Type (electron) conductors—which are widely used as the transparent electrodes in flat-panel displays1,2. On the other hand, no transparent oxide exhibiting high p-Type (hole) Conductivity is known to exist, whereas such materials could open the way to a range of novel applications. For example, a combination of the two Types of transparent conductor in the form of a pn junction could lead to a ‘functional’ window that transmits visible light yet generates electricity in response to the absorption of ultraviolet photons. Here we describe a strategy for identifying oxide materials that should combine p-Type Conductivity with good optical transparency. We illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p-Type Conductivity up to 1 S cm−1. Although the Conductivity of our candidate material is significantly lower than that observed for the best n-Type conducting oxides, it is sufficient for some applications, and demonstrates that the development of transparent p-Type conductors is not an insurmountable goal.
Alex Zunger - One of the best experts on this subject based on the ideXlab platform.
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inverse design approach to hole doping in ternary oxides enhancing p Type Conductivity in cobalt oxide spinels
Physical Review B, 2011Co-Authors: J D Perkins, Tula R Paudel, Andriy Zakutayev, Paul F Ndione, P A Parilla, David L Young, Stephan Lany, D S Ginley, Alex ZungerAbstract:Holescanbereadilydopedintosmall-gapsemiconductorssuchasSiorGaAs,butcorresponding p-Typedoping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the protoType A2BO4 spinel Co2ZnO4, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co2ZnO4 due to extrinsic (Mg) doping and, ultimately, a factor of 10 4 increase for the inverse spinel
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inverse design approach to hole doping in ternary oxides enhancing p Type Conductivity in cobalt oxide spinels
Physical Review B, 2011Co-Authors: J D Perkins, Tula R Paudel, Andriy Zakutayev, Paul F Ndione, P A Parilla, David L Young, Stephan Lany, D S Ginley, Alex ZungerAbstract:Holes can be readily doped into small-gap semiconductors such as Si or GaAs, but corresponding $p$-Type doping in wide-gap insulators, while maintaining transparency, has proven difficult. Here, by utilizing design principles distilled from theory with systematic measurements in the protoType ${A}_{2}B$O${}_{4}$ spinel Co${}_{2}$ZnO${}_{4}$, we formulate and test practical design rules for effective hole doping. Using these, we demonstrate a 20-fold increase in the hole density in Co${}_{2}$ZnO${}_{4}$ due to extrinsic (Mg) doping and, ultimately, a factor of 10${}^{4}$ increase for the inverse spinel Co${}_{2}$NiO${}_{4}$, the $x$ $=$ 1 end point of Ni-doped Co${}_{2}$Zn${}_{1\ensuremath{-}x}$Ni${}_{x}$O${}_{4}$.
Christopher B. Murray - One of the best experts on this subject based on the ideXlab platform.
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synergism in binary nanocrystal superlattices leads to enhanced p Type Conductivity in self assembled pbte ag2te thin films
Nature Materials, 2007Co-Authors: Jeffrey J. Urban, Dmitri V. Talapin, Elena V. Shevchenko, Cherie R. Kagan, Christopher B. MurrayAbstract:Synergism in binary nanocrystal superlattices leads to enhanced p-Type Conductivity in self-assembled PbTe/Ag 2 Te thin films
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synergism in binary nanocrystal superlattices leads to enhanced p Type Conductivity in self assembled pbte ag2te thin films
Nature Materials, 2007Co-Authors: Jeffrey J. Urban, Dmitri V. Talapin, Elena V. Shevchenko, Cherie R. Kagan, Christopher B. MurrayAbstract:The ordered cocrystallization of nanoparticles into binary superlattices enables close contact of nanocrystals with distinct physical properties, providing a route to 'metamaterials' design. Here we present the first electronic measurements of multicomponent nanocrystal solids composed of PbTe and Ag(2)Te, demonstrating synergistic effects leading to enhanced p-Type Conductivity. First, syntheses of size-tuneable PbTe and Ag(2)Te nanocrystals are presented, along with deposition as thin-film nanocrystal solids, whose electronic transport properties are characterized. Next, assembly of PbTe and Ag(2)Te nanocrystals into AB binary nanocrystal superlattices is demonstrated. Furthermore, binary composites of varying PbTe-Ag(2)Te stoichiometry (1:1 and 5:1) are prepared and electronically characterized. These composites show strongly enhanced (conductance approximately 100-fold increased in 1:1 composites over the sum of individual conductances of single-component PbTe and Ag(2)Te films) p-Type electronic Conductivity. This observation, consistent with the role of Ag(2)Te as a p-Type dopant in bulk PbTe, demonstrates that nanocrystals can behave as dopants in nanostructured assemblies.
Vincent Sallet - One of the best experts on this subject based on the ideXlab platform.
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Enhancing the intrinsic p-Type Conductivity of the ultra-wide bandgap Ga2O3 semiconductor
Journal of Materials Chemistry C, 2019Co-Authors: Ekaterine Chikoidze, Corinne Sartel, Hagar Mohamed, Ismail Madaci, Tamar Tchelidze, Mircea Modreanu, Pablo Vales-castro, Carles Rubio, Christophe Arnold, Vincent SalletAbstract:While there are several n-Type transparent semiconductor oxides (TSO) for optoelectronic applications (e.g. LEDs, solar cells or display TFTs), their required p-Type counterparts oxides are known to be more challenging. For the time being, the n-Type TSO with the largest bandgap (~5eV) is Ga2O3 that holds the promisse of extending the light transparency further into the deep ultraviolet. In this work, it is demonstrated that strongly compensated Ga2O3 is also the intrinsic (or native) p-Type TSO with the largest bandgap for any reported p-Type TSO (e.g. NiO, SnO, delafossites, oxychalcogenides). The achievement of hole mobility in excess of 10 cm 2 /Vs and (high temperature) free hole concentrations in the ~10 17 cm-3 range challenges the current thinking about achieving p-Type Conductivity in Ga2O3 being "out of question". The results presented in this paper therefore further clarify that p-Type Ga2O3 is possible, although more research must be conducted to determine what are the real Ga2O3 prospects for solar blind bipolar optoelectronics and ultrahigh power electronics based in p-n homojunctions.
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enhancing the intrinsic p Type Conductivity of the ultra wide bandgap ga2o3 semiconductor
Journal of Materials Chemistry C, 2019Co-Authors: Ekaterine Chikoidze, Corinne Sartel, Hagar Mohamed, Ismail Madaci, Tamar Tchelidze, Mircea Modreanu, Christophe Arnold, Pablo Valescastro, Carles M Rubio, Vincent SalletAbstract:While there are several n-Type transparent semiconductor oxides (TSO) for optoelectronic applications (e.g. LEDs, solar cells or display TFTs), their required p-Type counterpart oxides are known to be more challenging. At this time, the n-Type TSO with the largest bandgap (∼5 eV) is Ga2O3 that holds the promise of extending the light transparency further into the deep ultraviolet. In this work, it is demonstrated that strongly compensated Ga2O3 is also an intrinsic (or native) p-Type TSO with the largest bandgap for any reported p-Type TSO (e.g. NiO, SnO, delafossites, oxychalcogenides). The achievement of hole mobility in excess of 10 cm2 V−1 s−1 and (high temperature) free hole concentrations in the ∼1017 cm−3 range challenges the current thinking about achieving p-Type Conductivity in Ga2O3 being “out of the question”. The results presented in this paper therefore further clarify that p-Type Ga2O3 is possible, although more research must be conducted to determine what are the real prospects for Ga2O3 solar blind bipolar optoelectronics and ultra-high power electronics based on p–n homojunctions.
Jeffrey J. Urban - One of the best experts on this subject based on the ideXlab platform.
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synergism in binary nanocrystal superlattices leads to enhanced p Type Conductivity in self assembled pbte ag2te thin films
Nature Materials, 2007Co-Authors: Jeffrey J. Urban, Dmitri V. Talapin, Elena V. Shevchenko, Cherie R. Kagan, Christopher B. MurrayAbstract:Synergism in binary nanocrystal superlattices leads to enhanced p-Type Conductivity in self-assembled PbTe/Ag 2 Te thin films
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synergism in binary nanocrystal superlattices leads to enhanced p Type Conductivity in self assembled pbte ag2te thin films
Nature Materials, 2007Co-Authors: Jeffrey J. Urban, Dmitri V. Talapin, Elena V. Shevchenko, Cherie R. Kagan, Christopher B. MurrayAbstract:The ordered cocrystallization of nanoparticles into binary superlattices enables close contact of nanocrystals with distinct physical properties, providing a route to 'metamaterials' design. Here we present the first electronic measurements of multicomponent nanocrystal solids composed of PbTe and Ag(2)Te, demonstrating synergistic effects leading to enhanced p-Type Conductivity. First, syntheses of size-tuneable PbTe and Ag(2)Te nanocrystals are presented, along with deposition as thin-film nanocrystal solids, whose electronic transport properties are characterized. Next, assembly of PbTe and Ag(2)Te nanocrystals into AB binary nanocrystal superlattices is demonstrated. Furthermore, binary composites of varying PbTe-Ag(2)Te stoichiometry (1:1 and 5:1) are prepared and electronically characterized. These composites show strongly enhanced (conductance approximately 100-fold increased in 1:1 composites over the sum of individual conductances of single-component PbTe and Ag(2)Te films) p-Type electronic Conductivity. This observation, consistent with the role of Ag(2)Te as a p-Type dopant in bulk PbTe, demonstrates that nanocrystals can behave as dopants in nanostructured assemblies.
