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Lin Chen - One of the best experts on this subject based on the ideXlab platform.
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A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation.
Journal of nanoscience and nanotechnology, 2011Co-Authors: Lining Zhang, Xingye Zhou, Lin Chen, Wang Zhou, Wenping Wang, Mansun ChanAbstract:A unified drain current model for undoped or lightly doped symmetric double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation effect is proposed in this paper. The unified charge-based core model for undoped or lightly doped double-gate and surrounding-gate MOSFETs is presented first based on the previously published separate models. Caughey-Thomas engineering mobility model with its exponent factor n = 2 is then integrated self-consistently into the unified drain current model development of the two device structures. Extensive two dimensional and three dimensional device simulations are performed to validate the proposed model. Good agreements of the output and transfer characteristics between the unified model and the numerical simulations are obtained for both the double-gate and surrounding-gate MOSFETs. Symmetry property of the proposed unified current model is obtained with the exponent factor n = 2 in Cauhey-Thomas Model.
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A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation
2010 3rd International Nanoelectronics Conference (INEC), 2010Co-Authors: Lining Zhang, Xingye Zhou, Lin Chen, Wang Zhou, Mansun ChanAbstract:A unified drain current model for undoped or lightly doped double-gate (DG) and surrounding-gate (SRG) MOSFETs incorporating Velocity Saturation effect are presented in this paper. The unified charge-based core model for undoped or lightly doped DG and SRG MOSFETs is presented first. Caughey-Thomas engineering mobility model with exponent factor n=2 is then integrated self-consistently into the unified drain current model derivation of the two device structure. Extensive two dimensional (2D) and three dimensional (3D) device simulations are performed to validate the proposed model. Symmetry property of the proposed unified current model is obtained with the exponent factor n=2 in Cauhey-Thomas Model.
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A carrier-based analytic drain current model incorporating Velocity Saturation for undoped surrounding-gate MOSFETs
Semiconductor Science and Technology, 2009Co-Authors: Lining Zhang, Wang Zhou, Yan Guan, Lin ChenAbstract:A carrier-based analytic drain current model including the Velocity Saturation effect for the undoped surrounding-gate (SRG) MOSFETs is developed in this paper. Based on the previously ideal carrier-based drain current model, the Caughey–Thomas mobility model with an exponent factor n = 2 is applied and integrated into the analytic drain current model development. The validity of the presented model is confirmed by comparisons with three-dimensional (3D) TCAD device simulations for good agreements between the model prediction and numerical simulation on transfer/output characteristics and trans/output-conductance of the SRG MOSFETs are obtained in the whole operation regions from subthreshold to strong inversion and from linear to Saturation regions. The symmetry property of the developed drain current model is guaranteed by the exponent factor n = 2 in the Caughey–Thomas model and also further tested, promoting the analog circuit design function of the proposed model.
Boris Gurevich - One of the best experts on this subject based on the ideXlab platform.
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case history using time lapse vertical seismic profiling data to constrain Velocity Saturation relations the frio brine pilot co2 injection
Geophysical Prospecting, 2016Co-Authors: Boris Gurevich, Mohammed Al Hosni, Eva Caspari, Roman Pevzner, Thomas M. DaleyAbstract:Author(s): Al Hosni, M; Caspari, E; Pevzner, R; Daley, TM; Gurevich, B | Abstract: © 2016 European Association of Geoscientists a Engineers CO2 sequestration projects benefit from quantitative assessment of Saturation distribution and plume extent for field development and leakage prevention. In this work, we carry out quantitative analysis of time-lapse seismic by using rock physics and seismic modelling tools. We investigate the suitability of Gassmann's equation for a CO2 sequestration project with 1600 tons of CO2 injected into high-porosity, brine-saturated sandstone. We analyze the observed time delays and amplitude changes in a time-lapse vertical seismic profile dataset. Both reflected and transmitted waves are analyzed qualitatively and quantitatively. To interpret the changes obtained from the vertical seismic profile, we perform a 2.5D elastic, finite-difference modelling study. The results show a P-wave Velocity reduction of 750 m/s in the proximity of the injection well evident by the first arrivals (travel-time delays and amplitude change) and reflected wave amplitude changes. These results do not match with our rock physics model using Gassmann's equation predictions even when taking uncertainty in CO2 Saturation and grain properties into account. We find that time-lapse vertical seismic profile data integrated with other information (e.g., core and well log) can be used to constrain the Velocity–Saturation relation and verify the applicability of theoretical models such as Gassmann's equation with considerable certainty. The study shows that possible nonelastic factors are in play after CO2 injection (e.g., CO2–brine–rock interaction and pressure effect) as Gassmann's equation underestimated the Velocity reduction in comparison with field data for all three sets of time-lapse vertical seismic profile attributes. Our work shows the importance of data integration to validate the applicability of theoretical models such as Gassmann's equation for quantitative analysis of time-lapse seismic data.
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Case History: Using time-lapse vertical seismic profiling data to constrain Velocity–Saturation relations: the Frio brine pilot CO2 injection
Geophysical Prospecting, 2016Co-Authors: Mohammed Al Hosni, Eva Caspari, Roman Pevzner, Thomas M. Daley, Boris GurevichAbstract:Author(s): Al Hosni, M; Caspari, E; Pevzner, R; Daley, TM; Gurevich, B | Abstract: © 2016 European Association of Geoscientists a Engineers CO2 sequestration projects benefit from quantitative assessment of Saturation distribution and plume extent for field development and leakage prevention. In this work, we carry out quantitative analysis of time-lapse seismic by using rock physics and seismic modelling tools. We investigate the suitability of Gassmann's equation for a CO2 sequestration project with 1600 tons of CO2 injected into high-porosity, brine-saturated sandstone. We analyze the observed time delays and amplitude changes in a time-lapse vertical seismic profile dataset. Both reflected and transmitted waves are analyzed qualitatively and quantitatively. To interpret the changes obtained from the vertical seismic profile, we perform a 2.5D elastic, finite-difference modelling study. The results show a P-wave Velocity reduction of 750 m/s in the proximity of the injection well evident by the first arrivals (travel-time delays and amplitude change) and reflected wave amplitude changes. These results do not match with our rock physics model using Gassmann's equation predictions even when taking uncertainty in CO2 Saturation and grain properties into account. We find that time-lapse vertical seismic profile data integrated with other information (e.g., core and well log) can be used to constrain the Velocity–Saturation relation and verify the applicability of theoretical models such as Gassmann's equation with considerable certainty. The study shows that possible nonelastic factors are in play after CO2 injection (e.g., CO2–brine–rock interaction and pressure effect) as Gassmann's equation underestimated the Velocity reduction in comparison with field data for all three sets of time-lapse vertical seismic profile attributes. Our work shows the importance of data integration to validate the applicability of theoretical models such as Gassmann's equation for quantitative analysis of time-lapse seismic data.
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Using time-lapse VSP data to constrain Velocity-Saturation relations
ASEG Extended Abstracts, 2015Co-Authors: Mohammed Al Hosni, Eva Caspari, Roman Pevzner, Thomas M. Daley, Boris GurevichAbstract:SUMMARY Quantitative interpretation of time-lapse seismic data is an ongoing challenge. Understanding the VelocitySaturation relations and changes caused by CO2 injection play an important role for the application of seismic monitoring techniques to carbon dioxide storage projects. High uncertainties associated with well log measurements affected by borehole conditions can affect our ability to constrain a rock physics model. Seismic measurements, such as Vertical Seismic Profile (VSP), that span both the near-well region and far beyond the borehole can provide good control for correcting these measurements and reducing the uncertainties thereafter. In this paper, we analyse the observed time delays in time-lapse VSP data from the Frio CO2 injection test site by employing an integrated approach of rock physics and seismic forward modelling to reduce uncertainties in the choice of the dry frame modulus and Velocity-Saturation relations. First, we confirmed the quality of pre-injection well logs velocities with VSP data. Afterwards, we use inverse Gassmann relations to calculate the dry frame properties of the reservoir with different input parameters for the grain moduli with fluid substitution applied for uniform Saturation of brine and CO2. Finally, forward modelling of the results is implemented to compare the response with field VSP data. Our investigation shows that VSP data can help constrain the choice of dry frame modulus, and thus the VelocitySaturation relation. The rock physics model best matches the VSP results using large grain moduli and uniform Saturation for fluid substitution.
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Direct laboratory observation of Velocity-Saturation relation transition during rocks Saturation
SEG Technical Program Expanded Abstracts 2008, 2008Co-Authors: Maxim Lebedev, Boris Gurevich, Juliana Toms, B. Clennel, Marina Pervukhina, T. MuellerAbstract:Ultrasonic velocities and fluid Saturations are measured simultaneously during water injection into sandstone core samples. The experimental results obtained on lowpermeability samples show that at low Saturation values the Velocity-Saturation dependence can be described by the Gassmann-Wood relationship. However, with increasing Saturation a sharp increase of P-wave Velocity is observed, eventually approaching the Gassmann-Hill relationship. We relate this transition behavior to the change of the fluid distribution characteristics inferred from CT scans. In particular, we show that for relatively large fluid injection rate this transition occurs at smaller degrees of Saturation as compared with high injection rate.
Lining Zhang - One of the best experts on this subject based on the ideXlab platform.
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A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation.
Journal of nanoscience and nanotechnology, 2011Co-Authors: Lining Zhang, Xingye Zhou, Lin Chen, Wang Zhou, Wenping Wang, Mansun ChanAbstract:A unified drain current model for undoped or lightly doped symmetric double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation effect is proposed in this paper. The unified charge-based core model for undoped or lightly doped double-gate and surrounding-gate MOSFETs is presented first based on the previously published separate models. Caughey-Thomas engineering mobility model with its exponent factor n = 2 is then integrated self-consistently into the unified drain current model development of the two device structures. Extensive two dimensional and three dimensional device simulations are performed to validate the proposed model. Good agreements of the output and transfer characteristics between the unified model and the numerical simulations are obtained for both the double-gate and surrounding-gate MOSFETs. Symmetry property of the proposed unified current model is obtained with the exponent factor n = 2 in Cauhey-Thomas Model.
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A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation
2010 3rd International Nanoelectronics Conference (INEC), 2010Co-Authors: Lining Zhang, Xingye Zhou, Lin Chen, Wang Zhou, Mansun ChanAbstract:A unified drain current model for undoped or lightly doped double-gate (DG) and surrounding-gate (SRG) MOSFETs incorporating Velocity Saturation effect are presented in this paper. The unified charge-based core model for undoped or lightly doped DG and SRG MOSFETs is presented first. Caughey-Thomas engineering mobility model with exponent factor n=2 is then integrated self-consistently into the unified drain current model derivation of the two device structure. Extensive two dimensional (2D) and three dimensional (3D) device simulations are performed to validate the proposed model. Symmetry property of the proposed unified current model is obtained with the exponent factor n=2 in Cauhey-Thomas Model.
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A carrier-based analytic drain current model incorporating Velocity Saturation for undoped surrounding-gate MOSFETs
Semiconductor Science and Technology, 2009Co-Authors: Lining Zhang, Wang Zhou, Yan Guan, Lin ChenAbstract:A carrier-based analytic drain current model including the Velocity Saturation effect for the undoped surrounding-gate (SRG) MOSFETs is developed in this paper. Based on the previously ideal carrier-based drain current model, the Caughey–Thomas mobility model with an exponent factor n = 2 is applied and integrated into the analytic drain current model development. The validity of the presented model is confirmed by comparisons with three-dimensional (3D) TCAD device simulations for good agreements between the model prediction and numerical simulation on transfer/output characteristics and trans/output-conductance of the SRG MOSFETs are obtained in the whole operation regions from subthreshold to strong inversion and from linear to Saturation regions. The symmetry property of the developed drain current model is guaranteed by the exponent factor n = 2 in the Caughey–Thomas model and also further tested, promoting the analog circuit design function of the proposed model.
Valipe Ramgopal Rao - One of the best experts on this subject based on the ideXlab platform.
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Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs
IEEE Transactions on Electron Devices, 2008Co-Authors: V. Hariharan, Juzer Vasi, Valipe Ramgopal RaoAbstract:A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with Velocity Saturation effects being included as an integral part of the model derivation. Velocity Saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2. Id-Vd, Id-Vg, gm -Vg, and gDS-Vd comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown.
Wang Zhou - One of the best experts on this subject based on the ideXlab platform.
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A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation.
Journal of nanoscience and nanotechnology, 2011Co-Authors: Lining Zhang, Xingye Zhou, Lin Chen, Wang Zhou, Wenping Wang, Mansun ChanAbstract:A unified drain current model for undoped or lightly doped symmetric double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation effect is proposed in this paper. The unified charge-based core model for undoped or lightly doped double-gate and surrounding-gate MOSFETs is presented first based on the previously published separate models. Caughey-Thomas engineering mobility model with its exponent factor n = 2 is then integrated self-consistently into the unified drain current model development of the two device structures. Extensive two dimensional and three dimensional device simulations are performed to validate the proposed model. Good agreements of the output and transfer characteristics between the unified model and the numerical simulations are obtained for both the double-gate and surrounding-gate MOSFETs. Symmetry property of the proposed unified current model is obtained with the exponent factor n = 2 in Cauhey-Thomas Model.
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A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating Velocity Saturation
2010 3rd International Nanoelectronics Conference (INEC), 2010Co-Authors: Lining Zhang, Xingye Zhou, Lin Chen, Wang Zhou, Mansun ChanAbstract:A unified drain current model for undoped or lightly doped double-gate (DG) and surrounding-gate (SRG) MOSFETs incorporating Velocity Saturation effect are presented in this paper. The unified charge-based core model for undoped or lightly doped DG and SRG MOSFETs is presented first. Caughey-Thomas engineering mobility model with exponent factor n=2 is then integrated self-consistently into the unified drain current model derivation of the two device structure. Extensive two dimensional (2D) and three dimensional (3D) device simulations are performed to validate the proposed model. Symmetry property of the proposed unified current model is obtained with the exponent factor n=2 in Cauhey-Thomas Model.
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A carrier-based analytic drain current model incorporating Velocity Saturation for undoped surrounding-gate MOSFETs
Semiconductor Science and Technology, 2009Co-Authors: Lining Zhang, Wang Zhou, Yan Guan, Lin ChenAbstract:A carrier-based analytic drain current model including the Velocity Saturation effect for the undoped surrounding-gate (SRG) MOSFETs is developed in this paper. Based on the previously ideal carrier-based drain current model, the Caughey–Thomas mobility model with an exponent factor n = 2 is applied and integrated into the analytic drain current model development. The validity of the presented model is confirmed by comparisons with three-dimensional (3D) TCAD device simulations for good agreements between the model prediction and numerical simulation on transfer/output characteristics and trans/output-conductance of the SRG MOSFETs are obtained in the whole operation regions from subthreshold to strong inversion and from linear to Saturation regions. The symmetry property of the developed drain current model is guaranteed by the exponent factor n = 2 in the Caughey–Thomas model and also further tested, promoting the analog circuit design function of the proposed model.
