Wavefield Intensity

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The Experts below are selected from a list of 48 Experts worldwide ranked by ideXlab platform

Valery I. Klyatskin - One of the best experts on this subject based on the ideXlab platform.

Michael A. Guzev - One of the best experts on this subject based on the ideXlab platform.

C Cusatis - One of the best experts on this subject based on the ideXlab platform.

  • detection of the standing x ray Wavefield Intensity inside a thin crystal using back diffraction topography and imaging
    Journal of Applied Crystallography, 2009
    Co-Authors: M G Honnicke, C Cusatis
    Abstract:

    The standing X-ray wavefield into a single-crystal bulk is characterized by acombination of the diffracted–reflected h-beams and the diffracted–transmittedo-beam. For different angular positions on the total reflection region, thestanding X-ray wavefield has its maximum from the region between the atomicplanes (low photoelectric absorption) to the region on the atomic planes (highphotoelectricabsorption).Historically,the evidencefor sucha characteristichascome from experiments such as anomalous transmission (Borrmann effect,originally detected in Laue geometry) and fluorescent measurements with asingle crystal under diffraction conditions. In the present work, such acharacteristic is demonstrated by the direct measurement of the standingX-raywavefieldIntensityintoa50 mm-thicksingle-crystalCCDdetector(Si800)set in back-diffraction geometry.1. IntroductionIn general, single crystals under diffraction conditions presentdynamical diffraction effects, i.e. the interaction between thediffracted–reflected h-beams and the diffracted–transmittedo-beam may be detected. Such an interaction is characterizedby a standing wavefield near to the surface (evanescentwavefield) and into the crystal bulk. For different angularpositions on the total reflection region, the standing wavefieldhas its maximum from the region between the atomic planes(low absorption) to the region on the atomic planes (highabsorption). The standing wavefield is evidenced, but notdirectly detected, by experiments such as anomalous trans-mission (Borrman, 1955; Authier, 2001) and secondary fluor-escent emission (Batterman, 1962) under single-crystaldiffraction conditions. The X-ray standing wave technique isalso used to characterize single-crystal materials (Authier,2001).Self-detection of X-ray diffraction is achieved by measuringadecreaseinthephotocurrent orinthephotocountingwhenasingle-crystal detector is set in the diffraction condition(Zheludeva, 1985; Holy´ et al., 1985; Jach et al., 1988). Thiseffect has been used for angular control of synchrotronmonochromators (Jach, 1990; Hall et al., 2004), in determiningthe energy resolution of graded SiGe monochromators (Erkoet al., 2001), and as a method for detecting X-ray diffraction atangles around and exactly equal to /2 (back-diffraction)(Ho¨nnicke et al., 2004). Also, self-detection imaging with thediffraction of a single-crystal CCD detector, at diffractionangles far from /2, has been reported (Ho¨nnicke & Cusatis,2005; Mitschke et al., 2005).In X-ray back-diffraction geometry (Caticha & Caticha-Ellis, 1982; Cusatis et al., 1996) the diffracted h-beam overlapstheincidentbeam.Insuchageometry,thewidthsofthesingle-crystal rocking curves are much larger ( 10

Gennadii V. Popov - One of the best experts on this subject based on the ideXlab platform.

M G Honnicke - One of the best experts on this subject based on the ideXlab platform.

  • detection of the standing x ray Wavefield Intensity inside a thin crystal using back diffraction topography and imaging
    Journal of Applied Crystallography, 2009
    Co-Authors: M G Honnicke, C Cusatis
    Abstract:

    The standing X-ray wavefield into a single-crystal bulk is characterized by acombination of the diffracted–reflected h-beams and the diffracted–transmittedo-beam. For different angular positions on the total reflection region, thestanding X-ray wavefield has its maximum from the region between the atomicplanes (low photoelectric absorption) to the region on the atomic planes (highphotoelectricabsorption).Historically,the evidencefor sucha characteristichascome from experiments such as anomalous transmission (Borrmann effect,originally detected in Laue geometry) and fluorescent measurements with asingle crystal under diffraction conditions. In the present work, such acharacteristic is demonstrated by the direct measurement of the standingX-raywavefieldIntensityintoa50 mm-thicksingle-crystalCCDdetector(Si800)set in back-diffraction geometry.1. IntroductionIn general, single crystals under diffraction conditions presentdynamical diffraction effects, i.e. the interaction between thediffracted–reflected h-beams and the diffracted–transmittedo-beam may be detected. Such an interaction is characterizedby a standing wavefield near to the surface (evanescentwavefield) and into the crystal bulk. For different angularpositions on the total reflection region, the standing wavefieldhas its maximum from the region between the atomic planes(low absorption) to the region on the atomic planes (highabsorption). The standing wavefield is evidenced, but notdirectly detected, by experiments such as anomalous trans-mission (Borrman, 1955; Authier, 2001) and secondary fluor-escent emission (Batterman, 1962) under single-crystaldiffraction conditions. The X-ray standing wave technique isalso used to characterize single-crystal materials (Authier,2001).Self-detection of X-ray diffraction is achieved by measuringadecreaseinthephotocurrent orinthephotocountingwhenasingle-crystal detector is set in the diffraction condition(Zheludeva, 1985; Holy´ et al., 1985; Jach et al., 1988). Thiseffect has been used for angular control of synchrotronmonochromators (Jach, 1990; Hall et al., 2004), in determiningthe energy resolution of graded SiGe monochromators (Erkoet al., 2001), and as a method for detecting X-ray diffraction atangles around and exactly equal to /2 (back-diffraction)(Ho¨nnicke et al., 2004). Also, self-detection imaging with thediffraction of a single-crystal CCD detector, at diffractionangles far from /2, has been reported (Ho¨nnicke & Cusatis,2005; Mitschke et al., 2005).In X-ray back-diffraction geometry (Caticha & Caticha-Ellis, 1982; Cusatis et al., 1996) the diffracted h-beam overlapstheincidentbeam.Insuchageometry,thewidthsofthesingle-crystal rocking curves are much larger ( 10