The Experts below are selected from a list of 28989 Experts worldwide ranked by ideXlab platform
T Sugie - One of the best experts on this subject based on the ideXlab platform.
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Wavelength Channel data rewriter using semiconductor optical saturator modulator
Journal of Lightwave Technology, 2006Co-Authors: Hiroki Takesue, Naoto Yoshimoto, Yasuo Shibata, Y Tohmori, T SugieAbstract:A Wavelength Channel data rewriter (WCDR) is a device that erases the data on an incoming signal by utilizing the saturation characteristic of a semiconductor optical amplifier (SOA) and then modulates it with new data to generate an upstream signal. This paper describes a theoretical and experimental investigation designed to improve the performance of the WCDR. Through numerical calculations, this paper shows that an SOA with a long waveguide with a large small-signal gain better suppresses optical bit patterns. This paper also uses calculated and experimental results to show that the amplified-spontaneous-emission noise in the SOA input signal degrades the bit-pattern suppression. This paper then describes the semiconductor optical saturator/modulator (SOSM), which this paper has developed for use in the WCDR based on the results of the author's theoretical investigations. This paper outlines the SOSM specifications and provides experimental results that confirm the improved WCDR performance obtained using the SOSM.
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Wavelength Channel data rewriter using semiconductor optical saturator/modulator
Journal of Lightwave Technology, 2006Co-Authors: Hiroki Takesue, Naoto Yoshimoto, Yasuo Shibata, Y Tohmori, Tsuyoshi Ito, T SugieAbstract:A Wavelength Channel data rewriter (WCDR) is a device that erases the data on an incoming signal by utilizing the saturation characteristic of a semiconductor optical amplifier (SOA) and then modulates it with new data to generate an upstream signal. This paper describes a theoretical and experimental investigation designed to improve the performance of the WCDR. Through numerical calculations, this paper shows that an SOA with a long waveguide with a large small-signal gain better suppresses optical bit patterns. This paper also uses calculated and experimental results to show that the amplified-spontaneous-emission noise in the SOA input signal degrades the bit-pattern suppression. This paper then describes the semiconductor optical saturator/modulator (SOSM), which this paper has developed for use in the WCDR based on the results of the author's theoretical investigations. This paper outlines the SOSM specifications and provides experimental results that confirm the improved WCDR performance obtained using the SOSM.
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Wavelength Channel data rewrite using saturated soa modulator for wdm networks with centralized light sources
Journal of Lightwave Technology, 2003Co-Authors: Hiroki Takesue, T SugieAbstract:This paper describes a method for realizing the efficient utilization of Wavelength resources in Wavelength-division multiplexing networks with centralized light sources. Using a deeply saturated semiconductor optical amplifier (SOA) modulator located in a remote node (RN), we erase the data on a downstream signal with a low extinction ratio and modulate it with new data to generate an upstream signal. Thus, we use only one Wavelength for bidirectional transmission between a center node and an RN, without placing lasers at the RN. In this paper, we analyze the data suppression characteristic of the SOA using a large signal model. We also estimate the bit error rate degradation in the presence of an unsuppressed downstream bit pattern in an upstream signal. We then report experimental results that confirm the basic characteristics of the Wavelength Channel data rewriter, which we constructed using a linear amplifier and an SOA. Finally, we provide the results of a data transmission experiment that we undertook using the data rewriter.
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data rewrite of Wavelength Channel using saturated soa modulator for wdm metro access networks with centralized light sources
European Conference on Optical Communication, 2002Co-Authors: H Takesue, T SugieAbstract:We propose a simple Wavelength reuse technique for WDM metro/access networks with centralized light sources. Using a deeply saturated SOA modulator located in a remote node, we erase the data on a low-extinction-ratio downstream signal and modulate it with new data to generate an upstream signal.
Hiroki Takesue - One of the best experts on this subject based on the ideXlab platform.
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Wavelength Channel data rewriter using semiconductor optical saturator modulator
Journal of Lightwave Technology, 2006Co-Authors: Hiroki Takesue, Naoto Yoshimoto, Yasuo Shibata, Y Tohmori, T SugieAbstract:A Wavelength Channel data rewriter (WCDR) is a device that erases the data on an incoming signal by utilizing the saturation characteristic of a semiconductor optical amplifier (SOA) and then modulates it with new data to generate an upstream signal. This paper describes a theoretical and experimental investigation designed to improve the performance of the WCDR. Through numerical calculations, this paper shows that an SOA with a long waveguide with a large small-signal gain better suppresses optical bit patterns. This paper also uses calculated and experimental results to show that the amplified-spontaneous-emission noise in the SOA input signal degrades the bit-pattern suppression. This paper then describes the semiconductor optical saturator/modulator (SOSM), which this paper has developed for use in the WCDR based on the results of the author's theoretical investigations. This paper outlines the SOSM specifications and provides experimental results that confirm the improved WCDR performance obtained using the SOSM.
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Wavelength Channel data rewriter using semiconductor optical saturator/modulator
Journal of Lightwave Technology, 2006Co-Authors: Hiroki Takesue, Naoto Yoshimoto, Yasuo Shibata, Y Tohmori, Tsuyoshi Ito, T SugieAbstract:A Wavelength Channel data rewriter (WCDR) is a device that erases the data on an incoming signal by utilizing the saturation characteristic of a semiconductor optical amplifier (SOA) and then modulates it with new data to generate an upstream signal. This paper describes a theoretical and experimental investigation designed to improve the performance of the WCDR. Through numerical calculations, this paper shows that an SOA with a long waveguide with a large small-signal gain better suppresses optical bit patterns. This paper also uses calculated and experimental results to show that the amplified-spontaneous-emission noise in the SOA input signal degrades the bit-pattern suppression. This paper then describes the semiconductor optical saturator/modulator (SOSM), which this paper has developed for use in the WCDR based on the results of the author's theoretical investigations. This paper outlines the SOSM specifications and provides experimental results that confirm the improved WCDR performance obtained using the SOSM.
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Wavelength Channel data rewrite using saturated soa modulator for wdm networks with centralized light sources
Journal of Lightwave Technology, 2003Co-Authors: Hiroki Takesue, T SugieAbstract:This paper describes a method for realizing the efficient utilization of Wavelength resources in Wavelength-division multiplexing networks with centralized light sources. Using a deeply saturated semiconductor optical amplifier (SOA) modulator located in a remote node (RN), we erase the data on a downstream signal with a low extinction ratio and modulate it with new data to generate an upstream signal. Thus, we use only one Wavelength for bidirectional transmission between a center node and an RN, without placing lasers at the RN. In this paper, we analyze the data suppression characteristic of the SOA using a large signal model. We also estimate the bit error rate degradation in the presence of an unsuppressed downstream bit pattern in an upstream signal. We then report experimental results that confirm the basic characteristics of the Wavelength Channel data rewriter, which we constructed using a linear amplifier and an SOA. Finally, we provide the results of a data transmission experiment that we undertook using the data rewriter.
Manijeh Razeghi - One of the best experts on this subject based on the ideXlab platform.
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bias selectable dual band mid long Wavelength infrared photodetectors based on inas inas1 xsbx type ii superlattices
Applied Physics Letters, 2015Co-Authors: Abbas Haddadi, Romain Chevallier, G Chen, A M Hoang, Manijeh RazeghiAbstract:A high performance bias-selectable mid-/long-Wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-Wavelength Channels' 50% cut-off Wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-Wavelength Channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10−7 A/cm2 under 100 mV applied bias, the mid-Wavelength Channel exhibited a specific detectivity of 8.2 × 1012 cm· Hz/W at 77 K. The long-Wavelength Channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10−4 A/cm2 under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 1011 cm· Hz/W.
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Bias-selectable dual-band mid-/long-Wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
Applied Physics Letters, 2015Co-Authors: Abbas Haddadi, Romain Chevallier, G Chen, A M Hoang, Manijeh RazeghiAbstract:A high performance bias-selectable mid-/long-Wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-Wavelength Channels' 50% cut-off Wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-Wavelength Channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10−7 A/cm2 under 100 mV applied bias, the mid-Wavelength Channel exhibited a specific detectivity of 8.2 × 1012 cm· Hz/W at 77 K. The long-Wavelength Channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10−4 A/cm2 under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 1011 cm· Hz/W.
M. Zirngibl - One of the best experts on this subject based on the ideXlab platform.
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A fast 100-Channel Wavelength-tunable transmitter for optical packet switching
IEEE Photonics Technology Letters, 2001Co-Authors: Chun Kit Chan, Karl L. Sherman, M. ZirngiblAbstract:This letter demonstrates a fast Wavelength-tunable transmitter, based on a widely tunable grating-assisted co-directional coupler with sampled grating reflector laser diode for optical packet switching application. A high-speed control driver board was built to facilitate the fast Wavelength Channel selection and control. It supported 100 Wavelength Channels spaced by 0.4 nm with a side-mode suppression ratio >30 dB. Wavelength Channel switching was measured to be within 100 ns.
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An 18-Channel multifrequency laser
IEEE Photonics Technology Letters, 1996Co-Authors: M. Zirngibl, C.h. Joyner, C.r. Doerr, L.w. Stulz, H.m. PresbyAbstract:A multifrequency laser (MFL) is demonstrated that runs simultaneously CW on 18 Channels spaced by 103 GHz. The laser emits -14.6-dBm power per Wavelength Channel into single-mode fiber. Each Wavelength Channel can be modulated at 1.24 Gb/s. The MFL exhibits a stable and reproducible optical Channel spacing owing to the reproducibility of the waveguide grating router that serves as the intracavity filter element.
Abbas Haddadi - One of the best experts on this subject based on the ideXlab platform.
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bias selectable dual band mid long Wavelength infrared photodetectors based on inas inas1 xsbx type ii superlattices
Applied Physics Letters, 2015Co-Authors: Abbas Haddadi, Romain Chevallier, G Chen, A M Hoang, Manijeh RazeghiAbstract:A high performance bias-selectable mid-/long-Wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-Wavelength Channels' 50% cut-off Wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-Wavelength Channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10−7 A/cm2 under 100 mV applied bias, the mid-Wavelength Channel exhibited a specific detectivity of 8.2 × 1012 cm· Hz/W at 77 K. The long-Wavelength Channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10−4 A/cm2 under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 1011 cm· Hz/W.
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Bias-selectable dual-band mid-/long-Wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
Applied Physics Letters, 2015Co-Authors: Abbas Haddadi, Romain Chevallier, G Chen, A M Hoang, Manijeh RazeghiAbstract:A high performance bias-selectable mid-/long-Wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-Wavelength Channels' 50% cut-off Wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-Wavelength Channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10−7 A/cm2 under 100 mV applied bias, the mid-Wavelength Channel exhibited a specific detectivity of 8.2 × 1012 cm· Hz/W at 77 K. The long-Wavelength Channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10−4 A/cm2 under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 1011 cm· Hz/W.
