The Experts below are selected from a list of 10356 Experts worldwide ranked by ideXlab platform

Zahra Shaterzadehyazdi - One of the best experts on this subject based on the ideXlab platform.

  • ab initio characterization of coupling strength for all types of dangling bond pairs on the hydrogen terminated si 100 2 1 surface
    Journal of Chemical Physics, 2018
    Co-Authors: Zahra Shaterzadehyazdi, Barry C Sanders, Gino A Dilabio
    Abstract:

    Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The results demonstrate that simple models for approximating tunneling, such as the Wentzel-Kramer-Brillouin Method, which do not incorporate the details of surface structure, are incapable of providing reasonable estimates of tunneling rates between dangling bonds. The results provide guidance to efforts related to the development of dangling-bond based computing elements.Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The...

  • ab initio characterization of coupling strength for all types of dangling bond pairs on the hydrogen terminated si 100 2 1 surface
    Journal of Chemical Physics, 2018
    Co-Authors: Zahra Shaterzadehyazdi, Barry C Sanders, Gino A Dilabio
    Abstract:

    Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The results demonstrate that simple models for approximating tunneling, such as the Wentzel-Kramer-Brillouin Method, which do not incorporate the details of surface structure, are incapable of providing reasonable estimates of tunneling rates between dangling bonds. The results provide guidance to efforts related to the development of dangling-bond based computing elements.

Gino A Dilabio - One of the best experts on this subject based on the ideXlab platform.

  • ab initio characterization of coupling strength for all types of dangling bond pairs on the hydrogen terminated si 100 2 1 surface
    Journal of Chemical Physics, 2018
    Co-Authors: Zahra Shaterzadehyazdi, Barry C Sanders, Gino A Dilabio
    Abstract:

    Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The results demonstrate that simple models for approximating tunneling, such as the Wentzel-Kramer-Brillouin Method, which do not incorporate the details of surface structure, are incapable of providing reasonable estimates of tunneling rates between dangling bonds. The results provide guidance to efforts related to the development of dangling-bond based computing elements.Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The...

  • ab initio characterization of coupling strength for all types of dangling bond pairs on the hydrogen terminated si 100 2 1 surface
    Journal of Chemical Physics, 2018
    Co-Authors: Zahra Shaterzadehyazdi, Barry C Sanders, Gino A Dilabio
    Abstract:

    Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The results demonstrate that simple models for approximating tunneling, such as the Wentzel-Kramer-Brillouin Method, which do not incorporate the details of surface structure, are incapable of providing reasonable estimates of tunneling rates between dangling bonds. The results provide guidance to efforts related to the development of dangling-bond based computing elements.

Barry C Sanders - One of the best experts on this subject based on the ideXlab platform.

  • ab initio characterization of coupling strength for all types of dangling bond pairs on the hydrogen terminated si 100 2 1 surface
    Journal of Chemical Physics, 2018
    Co-Authors: Zahra Shaterzadehyazdi, Barry C Sanders, Gino A Dilabio
    Abstract:

    Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The results demonstrate that simple models for approximating tunneling, such as the Wentzel-Kramer-Brillouin Method, which do not incorporate the details of surface structure, are incapable of providing reasonable estimates of tunneling rates between dangling bonds. The results provide guidance to efforts related to the development of dangling-bond based computing elements.Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The...

  • ab initio characterization of coupling strength for all types of dangling bond pairs on the hydrogen terminated si 100 2 1 surface
    Journal of Chemical Physics, 2018
    Co-Authors: Zahra Shaterzadehyazdi, Barry C Sanders, Gino A Dilabio
    Abstract:

    Recent work has suggested that coupled silicon dangling bonds sharing an excess electron may serve as building blocks for quantum-cellular-automata cells and quantum computing schemes when constructed on hydrogen-terminated silicon surfaces. In this work, we employ ab initio density-functional theory to examine the details associated with the coupling between two dangling bonds sharing one excess electron and arranged in various configurations on models of phosphorous-doped hydrogen-terminated silicon (100) surfaces. Our results show that the coupling strength depends strongly on the relative orientation of the dangling bonds on the surface and on the separation between them. The orientation of dangling bonds is determined by the anisotropy of the silicon (100) surface, so this feature of the surface is a significant contributing factor to variations in the strength of coupling between dangling bonds. The results demonstrate that simple models for approximating tunneling, such as the Wentzel-Kramer-Brillouin Method, which do not incorporate the details of surface structure, are incapable of providing reasonable estimates of tunneling rates between dangling bonds. The results provide guidance to efforts related to the development of dangling-bond based computing elements.

Shuangying Zhong - One of the best experts on this subject based on the ideXlab platform.

  • Analysis of terahertz wave penetration capacity to 2D conductive cylinder coated with steady-state parabolic distribution plasma media
    'Elsevier BV', 2021
    Co-Authors: Shuobei Sun, Song Liu, Shuangying Zhong
    Abstract:

    Terahertz waves have long been considered as the most efficient of many solutions to solve the blackout problem for the reason that terahertz waves have much stronger penetration than microwaves. In this paper, we will raise the incident wave band to terahertz band to discuss the application of terahertz technology in solving blackout problem. The plasma sheath attached to the reentry is considered as steady-state parabolic distribution. The back scattering radar cross section is used as an index to illustrate the strong penetration of terahertz wave, which is calculated with the Runge-Kutta Exponential Time Differencing-Finite Difference Time Domain Method. The attenuation of electromagnetic wave in uniform plasma is analyzed with Wentzel-Kramer-Brillouin Method. Moreover, the variation of different parameters of homogeneous and inhomogeneous plasma including the plasma density, the thickness of plasma and collision frequency, is also studied in this paper. It can be concluded that all the calculations of back scattering radar cross section reveals that terahertz wave have a powerful potential to cope with blackout problem and can be widely applied in the field of communication

Shuobei Sun - One of the best experts on this subject based on the ideXlab platform.

  • Analysis of terahertz wave penetration capacity to 2D conductive cylinder coated with steady-state parabolic distribution plasma media
    'Elsevier BV', 2021
    Co-Authors: Shuobei Sun, Song Liu, Shuangying Zhong
    Abstract:

    Terahertz waves have long been considered as the most efficient of many solutions to solve the blackout problem for the reason that terahertz waves have much stronger penetration than microwaves. In this paper, we will raise the incident wave band to terahertz band to discuss the application of terahertz technology in solving blackout problem. The plasma sheath attached to the reentry is considered as steady-state parabolic distribution. The back scattering radar cross section is used as an index to illustrate the strong penetration of terahertz wave, which is calculated with the Runge-Kutta Exponential Time Differencing-Finite Difference Time Domain Method. The attenuation of electromagnetic wave in uniform plasma is analyzed with Wentzel-Kramer-Brillouin Method. Moreover, the variation of different parameters of homogeneous and inhomogeneous plasma including the plasma density, the thickness of plasma and collision frequency, is also studied in this paper. It can be concluded that all the calculations of back scattering radar cross section reveals that terahertz wave have a powerful potential to cope with blackout problem and can be widely applied in the field of communication