The Experts below are selected from a list of 195 Experts worldwide ranked by ideXlab platform
Stefan De Gendt - One of the best experts on this subject based on the ideXlab platform.
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island growth in the atomic layer deposition of Zirconium oxide and aluminum oxide on hydrogen terminated silicon growth mode modeling and transmission electron microscopy
Journal of Applied Physics, 2004Co-Authors: Riikka L Puurunen, Wilfried Vandervorst, W Besling, Olivier Richard, H Bender, Thierry Conard, Chao Zhao, Annelies Delabie, M Caymax, Stefan De GendtAbstract:Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the Zirconium Tetrachloride∕water and the trimethyl aluminum∕water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma–optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a “shower model” of RD recently developed for ALD. Experimental surface fractions of the ALD-grown Zirconium oxide and aluminum oxid...
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Island growth in the atomic layer deposition of Zirconium oxide and aluminum oxide on hydrogen-terminated silicon:Growth mode modeling and transmission electron microscopy
'AIP Publishing', 2004Co-Authors: Puurunen, Riikka L, W Besling, Vandervorst Wilfried, Richard Olivier, Bender Hugo, Conard Thierry, Zhao Chao, Delabie Annelies, Caymax Matty, Stefan De GendtAbstract:\u3cp\u3eAtomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the Zirconium Tetrachloride/water and the trimethyl aluminum/water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma-optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a shower model of RD recently developed for ALD. Experimental surface fractions of the ALD-grown Zirconium oxide and aluminum oxide films were lower than the surface fractions calculated assuming RD, suggesting the occurrence of island growth. Island growth was confirmed with transmission electron microscopy (TEM) measurements, from which the island size and number of islands per unit surface area could also be estimated. The conclusion of island growth for the aluminum oxide deposition on hydrogen-terminated silicon contradicts earlier observations. In this work, physical aluminum oxide islands were observed in TEM after 15 ALD reaction cycles. Earlier, thicker aluminum oxide layers have been analyzed, where islands have not been observed because they have already coalesced to form a continuous film. The unreactivity of hydrogen-terminated silicon surface towards the ALD reactants, except for reactive defect areas, is proposed as the origin of island growth. Consequently, island growth can be regarded as undesired surface-selective ALD. \u3c/p\u3
Markku Leskela - One of the best experts on this subject based on the ideXlab platform.
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Zirconium dioxide thin films deposited by ale using Zirconium Tetrachloride as precursor
Applied Surface Science, 1994Co-Authors: Mikko Ritala, Markku LeskelaAbstract:Abstract ZrO2 thin films were grown by the atomic layer epitaxy (ALE) technique using ZrCl4 and water as reactants. At 500°C amorphous films with good thickness uniformities were deposited onto soda lime glass substrates. However, rather long pulse and purge times were needed to realize the self-controlled growth. Films were characterized by means of spectrophotometry, RBS, NRA, SEM and AFM.
Riikka L Puurunen - One of the best experts on this subject based on the ideXlab platform.
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island growth in the atomic layer deposition of Zirconium oxide and aluminum oxide on hydrogen terminated silicon growth mode modeling and transmission electron microscopy
Journal of Applied Physics, 2004Co-Authors: Riikka L Puurunen, Wilfried Vandervorst, W Besling, Olivier Richard, H Bender, Thierry Conard, Chao Zhao, Annelies Delabie, M Caymax, Stefan De GendtAbstract:Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the Zirconium Tetrachloride∕water and the trimethyl aluminum∕water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma–optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a “shower model” of RD recently developed for ALD. Experimental surface fractions of the ALD-grown Zirconium oxide and aluminum oxid...
W Besling - One of the best experts on this subject based on the ideXlab platform.
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island growth in the atomic layer deposition of Zirconium oxide and aluminum oxide on hydrogen terminated silicon growth mode modeling and transmission electron microscopy
Journal of Applied Physics, 2004Co-Authors: Riikka L Puurunen, Wilfried Vandervorst, W Besling, Olivier Richard, H Bender, Thierry Conard, Chao Zhao, Annelies Delabie, M Caymax, Stefan De GendtAbstract:Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the Zirconium Tetrachloride∕water and the trimethyl aluminum∕water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma–optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a “shower model” of RD recently developed for ALD. Experimental surface fractions of the ALD-grown Zirconium oxide and aluminum oxid...
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Island growth in the atomic layer deposition of Zirconium oxide and aluminum oxide on hydrogen-terminated silicon:Growth mode modeling and transmission electron microscopy
'AIP Publishing', 2004Co-Authors: Puurunen, Riikka L, W Besling, Vandervorst Wilfried, Richard Olivier, Bender Hugo, Conard Thierry, Zhao Chao, Delabie Annelies, Caymax Matty, Stefan De GendtAbstract:\u3cp\u3eAtomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the Zirconium Tetrachloride/water and the trimethyl aluminum/water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma-optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a shower model of RD recently developed for ALD. Experimental surface fractions of the ALD-grown Zirconium oxide and aluminum oxide films were lower than the surface fractions calculated assuming RD, suggesting the occurrence of island growth. Island growth was confirmed with transmission electron microscopy (TEM) measurements, from which the island size and number of islands per unit surface area could also be estimated. The conclusion of island growth for the aluminum oxide deposition on hydrogen-terminated silicon contradicts earlier observations. In this work, physical aluminum oxide islands were observed in TEM after 15 ALD reaction cycles. Earlier, thicker aluminum oxide layers have been analyzed, where islands have not been observed because they have already coalesced to form a continuous film. The unreactivity of hydrogen-terminated silicon surface towards the ALD reactants, except for reactive defect areas, is proposed as the origin of island growth. Consequently, island growth can be regarded as undesired surface-selective ALD. \u3c/p\u3
Mikko Ritala - One of the best experts on this subject based on the ideXlab platform.
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Zirconium dioxide thin films deposited by ale using Zirconium Tetrachloride as precursor
Applied Surface Science, 1994Co-Authors: Mikko Ritala, Markku LeskelaAbstract:Abstract ZrO2 thin films were grown by the atomic layer epitaxy (ALE) technique using ZrCl4 and water as reactants. At 500°C amorphous films with good thickness uniformities were deposited onto soda lime glass substrates. However, rather long pulse and purge times were needed to realize the self-controlled growth. Films were characterized by means of spectrophotometry, RBS, NRA, SEM and AFM.