The Experts below are selected from a list of 22008 Experts worldwide ranked by ideXlab platform

Jiang Tang - One of the best experts on this subject based on the ideXlab platform.

  • cusbse2 as a potential photovoltaic Absorber Material studies from theory to experiment
    Advanced Energy Materials, 2015
    Co-Authors: Dingjiang Xue, Ying Zhou, Shiyou Chen, Bo Yang, Zhenkun Yuan, Gang Wang, Xinsheng Liu, Daocheng Pan, Jiang Tang
    Abstract:

    CuSbSe2 appears to be a promising Absorber Material for thin-film solar cells due to its attractive optical and electrical properties, as well as earth-abundant, low-cost, and low-toxic constituent elements. However, no systematic study on the fundamental properties of CuSbSe2 has been reported, such as defect physics, Material, optical, and electrical properties, which are highly relevant for photovoltaic application. First, using density functional theory calculations, CuSbSe2 is shown to have benign defect properties, i.e., free of recombination-center defects, and flexible defect and carrier concentration which can be tuned through the control of growth condition. Next, systematic Material, optical, and electrical characterizations uncover many unexplored fundamental properties of CuSbSe2 including band position, temperature-dependent band gap energy, Raman spectrum, and so on, thus providing a solid foundation for further photovoltaic research. Finally, a prototype CuSbSe2-based thin film solar cell is fabricated by a hydrazine solution process. The systematic theoretical and experimental investigation, combined with the preliminary efficiency, confirms the great potential of CuSbSe2 for thin-film solar cell applications.

  • improving the performance of sb2se3 thin film solar cells over 4 by controlled addition of oxygen during film deposition
    Progress in Photovoltaics, 2015
    Co-Authors: Chao Chen, Ying Zhou, Liang Wang, Jie Zhong, Jie Chen, Dengbing Li, Jiang Tang
    Abstract:

    Sb2Se3 has attracted great research interest very recently as a promising Absorber Material for thin film photovoltaics due to its suitable bandgap, high absorption coefficient, and non-toxic, low cost, and earth abundant nature. In this work, a significant efficiency improvement to 4.8% of superstrate cadmium sulfide (CdS)/Sb2Se3 solar cells is obtained by the controlled addition of oxygen during thermal evaporation of Sb2Se3 films. Systematic Materials and device physics characterization reveal that oxygen addition during Sb2Se3 film evaporation significantly improves the CdS/Sb2Se3 heterojunction quality through effective passivation of interfacial defect states, resulting in a substantial enhancement in device circuit voltage and short circuit current density. The 4.8% device is the highest efficiency thus far reported for Sb2Se3 thin film solar cells. Copyright © 2015 John Wiley & Sons, Ltd.

  • thermal evaporation and characterization of sb2se3 thin film for substrate sb2se3 cds solar cells
    ACS Applied Materials & Interfaces, 2014
    Co-Authors: Meiying Leng, Lu Lv, Han Huang, Ying Zhou, Jiang Tang
    Abstract:

    Sb2Se3 is a promising Absorber Material for photovoltaic cells because of its optimum band gap, strong optical absorption, simple phase and composition, and earth-abundant and nontoxic constituents. However, this Material is rarely explored for photovoltaic application. Here we report Sb2Se3 solar cells fabricated from thermal evaporation. The rationale to choose thermal evaporation for Sb2Se3 film deposition was first discussed, followed by detailed characterization of Sb2Se3 film deposited onto FTO with different substrate temperatures. We then studied the optical absorption, photosensitivity, and band position of Sb2Se3 film, and finally a prototype photovoltaic device FTO/Sb2Se3/CdS/ZnO/ZnO:Al/Au was constructed, achieving an encouraging 2.1% solar conversion efficiency.

  • cusbs2 as a promising earth abundant photovoltaic Absorber Material a combined theoretical and experimental study
    Chemistry of Materials, 2014
    Co-Authors: Bo Yang, Ying Zhou, Shiyou Chen, Liang Wang, Jun Han, Huaibing Song, Jie Zhong, Dongmei Niu, Jiang Tang
    Abstract:

    Recently, CuSbS2 has been proposed as an alternative earth-abundant Absorber Material for thin film solar cells. However, no systematic study on the chemical, optical, and electrical properties of CuSbS2 has been reported. Using density functional theory (DFT) calculations, we showed that CuSbS2 has superior defect physics with extremely low concentration of recombination-center defects within the forbidden gap, espeically under the S rich condition. It has intrinsically p-type conductivity, which is determined by the dominant Cu vacancy (VCu) defects with the a shallow ionization level and the lowest formation energy. Using a hydrazine based solution process, phase-pure, highly crystalline CuSbS2 film with large grain size was successfully obtained. Optical absorption investigation revealed that our CuSbS2 has a direct band gap of 1.4 eV. Ultraviolet photoelectron spectroscopy (UPS) study showed that the conduction band and valence band are located at 3.85 eV and −5.25 eV relative to the vacuum level, re...

  • thermal evaporation and characterization of superstrate cds sb2se3 solar cells
    Applied Physics Letters, 2014
    Co-Authors: Meiying Leng, Chao Chen, Jie Chen, Jiang Tang
    Abstract:

    Sb2Se3 is a very promising Absorber Material for thin film photovoltaics because of its ideal band gap, strong optical absorption, and non-toxic and earth-abundant constituents. However, only until this year Sb2Se3 solar cell was reported. Here, we present the fabrication and characterization of thermally evaporated superstrate CdS/Sb2Se3 solar cell. Our device achieved a power conversion efficiency of 1.9% (Voc = 300 mV, Jsc = 13.2 mA/cm2, and FF = 48%) and showed good stability. Moreover, using current-voltage measurement, admittance spectroscopy, capacitance-voltage profiling, and drive level capacitance profiling, device characteristics and performance limiting factors are revealed and discussed.

D L Huffaker - One of the best experts on this subject based on the ideXlab platform.

  • high performance mid wavelength inas avalanche photodiode using alas 0 13 sb 0 87 as the multiplication layer
    Photonics Research, 2020
    Co-Authors: Jianliang Huang, Chengcheng Zhao, Biying Nie, Shiyu Xie, Dominic Kwan, Xiao Meng, Yanhua Zhang, D L Huffaker
    Abstract:

    We report on a high-performance mid-wavelength infrared avalanche photodetector (APD) with separate absorption and multiplication regions. InAs is used as the Absorber Material and high-bandgap AlAs0.13Sb0.87 is used as the multiplication Material. At room temperature, the APD’s peak response wavelength is 3.27 μm, and the 50% cutoff wavelength is 3.5 μm. The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27 μm when the applied reverse bias voltage is 14.6 V. The measured peak detectivity D⋆ of the device is 2.05×109  cm·Hz0.5/W at 3.27 μm.

Mingway Lee - One of the best experts on this subject based on the ideXlab platform.

  • tunable optical properties in snxsb2 ys3 a new solar Absorber Material with an efficiency of near 5
    Journal of Physical Chemistry C, 2019
    Co-Authors: Harrys Samosir, Jenbin Shi, David J Singh, Patsorn Boonon, Yuen Lin, Liping Chen, Mingway Lee
    Abstract:

    This work investigates the synthesis of a new ternary alloyed metal sulfide semiconductor SnxSb2–yS3 and its application in solar cells. SnxSb2–yS3 nanocrystals were synthesized by incorporating Sn2+ ions into the host binary Sb2S3 semiconductor using a two-step sequential ionic layer adsorption reaction (SILAR) process. The ternary SnxSb2–yS3 semiconductor maintains the monoclinic crystalline structure of the binary Sb2S3 host with a small expansion in lattice constants relative to that of Sb2S3. Energy-dispersive X-ray analysis revealed the nominal chemical composition of the sample with eight SILAR cycles to be Sn0.52Sb1.48S3. The energy gap Eg of SnxSb2–yS3 decreases with increasing Sn content x, resulting in a tunable Eg from 620 to 800 nm (i.e., 2.0–1.5 eV) for x = 0–0.56. Liquid-junction quantum dot-sensitized solar cells were fabricated, for the first time, from the prepared SnxSb2–yS3 nanocrystals using the polyiodide electrolyte. The best cell yielded an efficiency of 2.58% with the photovoltaic...

  • tunable optical properties in snxsb2 ys3 a new solar Absorber Material with an efficiency of near 5
    Journal of Physical Chemistry C, 2019
    Co-Authors: Harrys Samosir, Jenbin Shi, David J Singh, Patsorn Boonon, Yuen Lin, Liping Chen, Mingway Lee
    Abstract:

    This work investigates the synthesis of a new ternary alloyed metal sulfide semiconductor SnxSb2–yS3 and its application in solar cells. SnxSb2–yS3 nanocrystals were synthesized by incorporating Sn...

  • ag8sns6 a new ir solar Absorber Material with a near optimal bandgap
    RSC Advances, 2018
    Co-Authors: Patsorn Boonon, Belete Asefa Aragaw, Jenbin Shi, Chunyen Lee, Mingway Lee
    Abstract:

    We report the synthesis and photovoltaic properties of a new ternary solar Absorber – Ag8SnS6 nanocrystals prepared by successive ionic layer adsorption reaction (SILAR) technique. The synthesized Ag8SnS6 nanocrystals have a bandgap Eg of 1.24–1.41 eV as revealed from UV-Vis and external quantum efficiency (EQE) measurements. Its photovoltaic properties were characterized by assembling a liquid-junction Ag8SnS6 sensitized solar cell for the first time. The best cell yielded a Jsc of 9.29 mA cm−2, a Voc of 0.23 V, an FF of 31.3% and a power conversion efficiency (PCE) of 0.64% under 100% incident light illumination using polysulfide electrolyte and Au counter electrode. The efficiency improved to 1.43% at a reduced light intensity of 10% sun. When the polysulfide was replaced by a cobalt electrolyte with a lower redox level, the Voc increased to 0.54 V and PCE increased to 2.29% under 0.1 sun, a respectable efficiency for a new solar Material. The EQE spectrum covers the spectral range of 300–1000 nm with a maximum EQE of 77% at λ = 600 nm. The near optimal Eg and the respectable photovoltaic performance suggest that Ag8SnS6 nanocrystals have potential to be an efficient IR solar Absorber.

  • ion exchange prepared nasbse2 nanocrystals electronic structure and photovoltaic properties of a new solar Absorber Material
    RSC Advances, 2017
    Co-Authors: Belete Asefa Aragaw, Jifeng Sun, David J Singh, Mingway Lee
    Abstract:

    We report the calculated electronic structure, syntheses and photovoltaic properties of a new ternary solar Absorber Material NaSbSe2. NaSbSe2 nanocrystals (NCs) have been prepared from a Na–Sb–S precursor by the solution-based Se2− anion exchange reaction. The Na–Sb–S precursor was grown on a TiO2 electrode using the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction shows that the synthesized NaSbSe2 NCs have the same crystal structure as the NaSbS2 precursor with the diffraction angles significantly down-shifted. Energy-dispersive X-ray spectroscopy confirms the complete anion exchange and formation of the NaSbSe2 phase. First principles calculations show that the ordered NaSbSe2 structure resulting from the ion exchange synthesis is important for the performance. The NaSbSe2 NCs have an average size of ∼17 nm and a near-optimal optical band gap Eg of 1.48 eV that is lower than the NaSbS2 precursor. Liquid-junction NaSbSe2 quantum dot-sensitized solar cells (QDSSCs) were fabricated from the synthesized NaSbSe2 NCs for the first time. The best cell, prepared using the Au counter electrode and the polysulfide electrolyte, yielded an efficiency of 2.22%, a short current density of 1.31 mA cm−2, an open-circuit voltage of 0.30 V and a fill factor of 56.4% under the reduced light intensity of 10% sun. The external quantum efficiency (EQE) spectrum covers the spectral range of 300–900 nm with a maximum EQE of 75% at λ = 500 nm. The near-optimal Eg suggests that NaSbSe2 could be a potential Material for solar cells. In addition, the ion exchange method can be extended to the preparation of many new metal selenide-based solar Materials from their corresponding sulfides. These Materials may show improved characteristics compared to samples with more disorder.

  • sodium antimony sulfide nasbs2 turning an unexpected impurity into a promising environmentally friendly novel solar Absorber Material
    APL Materials, 2016
    Co-Authors: Siti Utari Rahayu, Chialing Chou, Nipapon Suriyawong, Belete Asefa Aragaw, Jenbin Shi, Mingway Lee
    Abstract:

    We present a novel Absorber Material—NaSbS2—for solar cells. NaSbS2 is formed as an unexpected byproduct in the chemical synthesis of Sb2S3. However, NaSbS2 has many attractive features for a solar Material. Here single phase NaSbS2 nanoparticles were synthesized through solution processing. NaSbS2 semiconductor-sensitized solar cells were demonstrated for the first time. The best cell yielded Jsc = 10.76 mA/cm2, Voc = 0.44 V, FF = 48.6%, and efficiency η = 2.30% under 1 sun. At the reduced 0.1 sun, the η increased to 3.18%—a respectable η for a new solar Material.

David B Mitzi - One of the best experts on this subject based on the ideXlab platform.

  • minority carrier diffusion length extraction in cu2znsn se s 4 solar cells
    Journal of Applied Physics, 2013
    Co-Authors: Tayfun Gokmen, Oki Gunawan, David B Mitzi
    Abstract:

    We report measurement of minority carrier diffusion length (Ld) for high performance Cu2ZnSn(S,Se)4 (CZTSSe) solar cells in comparison with analogous Cu(In,Ga)(S,Se)2 (CIGSSe) devices. Our Ld extraction method involves performing systematic measurements of the internal quantum efficiency combined with separate capacitance-voltage measurement. This method also enables the measurement of the absorption coefficient of the Absorber Material as a function of wavelength in a finished device. The extracted values of Ld for CZTSSe samples are at least factor of 2 smaller than those for CIGSSe samples. Combined with minority carrier lifetime (τ) data measured by time-resolved photoluminescence, we deduce the minority carrier mobility (μe), which is also relatively low for the CZTSSe samples.

  • solution processed cu in ga s se 2 Absorber yielding a 15 2 efficient solar cell
    Progress in Photovoltaics, 2013
    Co-Authors: Teodor K Todorov, Tayfun Gokmen, Oki Gunawan, David B Mitzi
    Abstract:

    The remarkable potential for inexpensive upscale of solution processing technologies is expected to enable chalcogenide-based photovoltaic systems to become more widely adopted to meet worldwide energy needs. Here, we report a thin-film solar cell with solution-processed Cu(In,Ga)(S,Se)2 (CIGS) Absorber. The power conversion efficiency of 15.2% is the highest published value for a pure solution deposition technique for any photovoltaic Absorber Material and is on par with the best nonvacuum-processed CIGS devices. We compare the performance of our cell with a world champion vacuum-deposited CIGS cell and perform detailed characterization, such as biased quantum efficiency, temperature-dependent electrical measurement, time-resolved photoluminescence, and capacitance spectroscopy. Copyright © 2012 John Wiley & Sons, Ltd.

Ying Zhou - One of the best experts on this subject based on the ideXlab platform.

  • cusbse2 as a potential photovoltaic Absorber Material studies from theory to experiment
    Advanced Energy Materials, 2015
    Co-Authors: Dingjiang Xue, Ying Zhou, Shiyou Chen, Bo Yang, Zhenkun Yuan, Gang Wang, Xinsheng Liu, Daocheng Pan, Jiang Tang
    Abstract:

    CuSbSe2 appears to be a promising Absorber Material for thin-film solar cells due to its attractive optical and electrical properties, as well as earth-abundant, low-cost, and low-toxic constituent elements. However, no systematic study on the fundamental properties of CuSbSe2 has been reported, such as defect physics, Material, optical, and electrical properties, which are highly relevant for photovoltaic application. First, using density functional theory calculations, CuSbSe2 is shown to have benign defect properties, i.e., free of recombination-center defects, and flexible defect and carrier concentration which can be tuned through the control of growth condition. Next, systematic Material, optical, and electrical characterizations uncover many unexplored fundamental properties of CuSbSe2 including band position, temperature-dependent band gap energy, Raman spectrum, and so on, thus providing a solid foundation for further photovoltaic research. Finally, a prototype CuSbSe2-based thin film solar cell is fabricated by a hydrazine solution process. The systematic theoretical and experimental investigation, combined with the preliminary efficiency, confirms the great potential of CuSbSe2 for thin-film solar cell applications.

  • improving the performance of sb2se3 thin film solar cells over 4 by controlled addition of oxygen during film deposition
    Progress in Photovoltaics, 2015
    Co-Authors: Chao Chen, Ying Zhou, Liang Wang, Jie Zhong, Jie Chen, Dengbing Li, Jiang Tang
    Abstract:

    Sb2Se3 has attracted great research interest very recently as a promising Absorber Material for thin film photovoltaics due to its suitable bandgap, high absorption coefficient, and non-toxic, low cost, and earth abundant nature. In this work, a significant efficiency improvement to 4.8% of superstrate cadmium sulfide (CdS)/Sb2Se3 solar cells is obtained by the controlled addition of oxygen during thermal evaporation of Sb2Se3 films. Systematic Materials and device physics characterization reveal that oxygen addition during Sb2Se3 film evaporation significantly improves the CdS/Sb2Se3 heterojunction quality through effective passivation of interfacial defect states, resulting in a substantial enhancement in device circuit voltage and short circuit current density. The 4.8% device is the highest efficiency thus far reported for Sb2Se3 thin film solar cells. Copyright © 2015 John Wiley & Sons, Ltd.

  • thermal evaporation and characterization of sb2se3 thin film for substrate sb2se3 cds solar cells
    ACS Applied Materials & Interfaces, 2014
    Co-Authors: Meiying Leng, Lu Lv, Han Huang, Ying Zhou, Jiang Tang
    Abstract:

    Sb2Se3 is a promising Absorber Material for photovoltaic cells because of its optimum band gap, strong optical absorption, simple phase and composition, and earth-abundant and nontoxic constituents. However, this Material is rarely explored for photovoltaic application. Here we report Sb2Se3 solar cells fabricated from thermal evaporation. The rationale to choose thermal evaporation for Sb2Se3 film deposition was first discussed, followed by detailed characterization of Sb2Se3 film deposited onto FTO with different substrate temperatures. We then studied the optical absorption, photosensitivity, and band position of Sb2Se3 film, and finally a prototype photovoltaic device FTO/Sb2Se3/CdS/ZnO/ZnO:Al/Au was constructed, achieving an encouraging 2.1% solar conversion efficiency.

  • cusbs2 as a promising earth abundant photovoltaic Absorber Material a combined theoretical and experimental study
    Chemistry of Materials, 2014
    Co-Authors: Bo Yang, Ying Zhou, Shiyou Chen, Liang Wang, Jun Han, Huaibing Song, Jie Zhong, Dongmei Niu, Jiang Tang
    Abstract:

    Recently, CuSbS2 has been proposed as an alternative earth-abundant Absorber Material for thin film solar cells. However, no systematic study on the chemical, optical, and electrical properties of CuSbS2 has been reported. Using density functional theory (DFT) calculations, we showed that CuSbS2 has superior defect physics with extremely low concentration of recombination-center defects within the forbidden gap, espeically under the S rich condition. It has intrinsically p-type conductivity, which is determined by the dominant Cu vacancy (VCu) defects with the a shallow ionization level and the lowest formation energy. Using a hydrazine based solution process, phase-pure, highly crystalline CuSbS2 film with large grain size was successfully obtained. Optical absorption investigation revealed that our CuSbS2 has a direct band gap of 1.4 eV. Ultraviolet photoelectron spectroscopy (UPS) study showed that the conduction band and valence band are located at 3.85 eV and −5.25 eV relative to the vacuum level, re...