The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Yasuhiko Arakawa - One of the best experts on this subject based on the ideXlab platform.
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electrically pumped 13 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
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electrically pumped 1 3 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
Katsuaki Tanabe - One of the best experts on this subject based on the ideXlab platform.
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electrically pumped 13 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
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electrically pumped 1 3 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
Satoshi Iwamoto - One of the best experts on this subject based on the ideXlab platform.
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electrically pumped 13 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
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electrically pumped 1 3 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
Damien Bordel - One of the best experts on this subject based on the ideXlab platform.
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electrically pumped 13 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
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electrically pumped 1 3 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
Denis Guimard - One of the best experts on this subject based on the ideXlab platform.
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electrically pumped 13 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.
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electrically pumped 1 3 μm room temperature inas gaas quantum dot lasers on si substrates by metal mediated wafer bonding and Layer transfer
Optics Express, 2010Co-Authors: Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko ArakawaAbstract:An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and Layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni Alloy Layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 μm at room temperature with a threshold current density of 600 A/cm2.