The Experts below are selected from a list of 47199 Experts worldwide ranked by ideXlab platform
J. Stoemenos - One of the best experts on this subject based on the ideXlab platform.
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Polycrystalline silicon thin-film transistors with two-step Annealing Process
IEEE Electron Device Letters, 1993Co-Authors: M. Bonnel, N. Duhamel, L. Haji, B. Loisel, J. StoemenosAbstract:Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step Annealing Process on glass substrates. The combination of low-temperature furnace Annealing and high-temperature rapid thermal Annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step Annealing material exhibit better measured characteristics than those obtained by using conventional furnace Annealing.
M. Bonnel - One of the best experts on this subject based on the ideXlab platform.
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Polycrystalline silicon thin-film transistors with two-step Annealing Process
IEEE Electron Device Letters, 1993Co-Authors: M. Bonnel, N. Duhamel, L. Haji, B. Loisel, J. StoemenosAbstract:Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step Annealing Process on glass substrates. The combination of low-temperature furnace Annealing and high-temperature rapid thermal Annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step Annealing material exhibit better measured characteristics than those obtained by using conventional furnace Annealing.
Jh Jeon Junhyuck Jeon - One of the best experts on this subject based on the ideXlab platform.
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ultraviolet photo Annealing Process for low temperature Processed sol gel zinc tin oxide thin film transistors
Electrochemical and Solid State Letters, 2012Co-Authors: Yh Hwang Younghwan Hwang, Jh Jeon Junhyuck JeonAbstract:C using an ultraviolet(UV) photo-Annealing Process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to theincorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-Annealing and vacuum Annealingimprove the electrical performance of the ZTO TFT with mobility of 2 cm
L. Haji - One of the best experts on this subject based on the ideXlab platform.
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Polycrystalline silicon thin-film transistors with two-step Annealing Process
IEEE Electron Device Letters, 1993Co-Authors: M. Bonnel, N. Duhamel, L. Haji, B. Loisel, J. StoemenosAbstract:Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step Annealing Process on glass substrates. The combination of low-temperature furnace Annealing and high-temperature rapid thermal Annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step Annealing material exhibit better measured characteristics than those obtained by using conventional furnace Annealing.
N. Duhamel - One of the best experts on this subject based on the ideXlab platform.
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Polycrystalline silicon thin-film transistors with two-step Annealing Process
IEEE Electron Device Letters, 1993Co-Authors: M. Bonnel, N. Duhamel, L. Haji, B. Loisel, J. StoemenosAbstract:Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step Annealing Process on glass substrates. The combination of low-temperature furnace Annealing and high-temperature rapid thermal Annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step Annealing material exhibit better measured characteristics than those obtained by using conventional furnace Annealing.
