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Annealing Process

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J. Stoemenos – 1st expert on this subject based on the ideXlab platform

  • Polycrystalline silicon thin-film transistors with two-step Annealing Process
    IEEE Electron Device Letters, 1993
    Co-Authors: M. Bonnel, N. Duhamel, L. Haji, B. Loisel, J. Stoemenos

    Abstract:

    Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step Annealing Process on glass substrates. The combination of low-temperature furnace Annealing and high-temperature rapid thermal Annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step Annealing material exhibit better measured characteristics than those obtained by using conventional furnace Annealing.

M. Bonnel – 2nd expert on this subject based on the ideXlab platform

  • Polycrystalline silicon thin-film transistors with two-step Annealing Process
    IEEE Electron Device Letters, 1993
    Co-Authors: M. Bonnel, N. Duhamel, L. Haji, B. Loisel, J. Stoemenos

    Abstract:

    Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step Annealing Process on glass substrates. The combination of low-temperature furnace Annealing and high-temperature rapid thermal Annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step Annealing material exhibit better measured characteristics than those obtained by using conventional furnace Annealing.

Jh Jeon Junhyuck Jeon – 3rd expert on this subject based on the ideXlab platform

  • ultraviolet photo Annealing Process for low temperature Processed sol gel zinc tin oxide thin film transistors
    Electrochemical and Solid State Letters, 2012
    Co-Authors: Yh Hwang Younghwan Hwang, Jh Jeon Junhyuck Jeon

    Abstract:

    C using an ultraviolet(UV) photo-Annealing Process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to theincorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-Annealing and vacuum Annealingimprove the electrical performance of the ZTO TFT with mobility of 2 cm