The Experts below are selected from a list of 3507 Experts worldwide ranked by ideXlab platform
Jun Chen - One of the best experts on this subject based on the ideXlab platform.
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arrays of vacuum microdiodes using uniform diamondlike carbon tip Apexes
Applied Physics Letters, 2006Co-Authors: J C She, H Hao, S Z Deng, Jun Chen, S E Huq, L WangAbstract:The authors report the fabrication and characterization of vacuum microdiode arrays using Si microtip with uniform diamondlike-carbon (DLC) Apexes. The technique is based on the mass production procedure of integrated circuit devices. The typical turn-on voltage of the microdiode arrays is 50V, and it can provide emission current density up to 0.24A∕cm2 at 210V. The developed diodes with coated Apexes considerably surpass the diodes with virgin Si tip (98V∕0.058A∕cm2) in their performance. Thus, the microdiode with DLC coatings on Si tip Apexes are attractive for applications in charge neutralizers and microwave amplifiers. The underlying physics responsible for the device operation is discussed.
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field electron emission of si nanotips with Apexes of various compositions
Applied Physics Letters, 2005Co-Authors: J C She, S Z Deng, K Zhao, Jun ChenAbstract:We report procedure with use of self-assembled silicon carbide (SiC) nanomasks for preparation of ultrahigh-density Si nanotips. Si nanotips with SiC apex may be firstly prepared in a CH4∕H2 plasma treatment and in a subsequent H2 plasma etching a SiC apex may be converted into an amorphous silicon (a-Si) one with an additional function of sharpening the nanotips. A comparative study of the field electron emission from the Si nanotips with Apexes of SiC, a-Si and pure Si is carried out, and shows that nanotips with a-Si Apexes have not only the highest field enhancement factor but also the best emission uniformity. The physical origins for the above two improvements in field emission are discussed.
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Field electron emission from gated Si tip arrays with DLC Apexes
2005 International Vacuum Nanoelectronics Conference, 2005Co-Authors: J C She, H Hao, S Z Deng, Jun Chen, S E Huq, N.s. Xu, L WangAbstract:We report the fabrication and characterization of well-defined gated Si microtip arrays with diamond-like carbon (DLC) Apexes. It was found that for a 40/spl times/40 gated Si tip array with DLC Apexes, an emission current density up to 0.23 A/cm/sup 2/ can be obtained at an applied gate voltage of 200 V. The turn-on gate voltage of the devices is fall in a range of 38-50 V.
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silicon tip arrays with ultrathin amorphous diamond Apexes
Applied Physics Letters, 2002Co-Authors: J C She, S Z Deng, S E Huq, Jun ChenAbstract:Silicon (Si) tip emitter arrays with uniform, smooth, and ultrathin (∼2 nm) amorphous diamond (a-D) Apexes were fabricated. Aqueous buffer hydrofluoric acid and H2/Ar plasma have been employed to remove the native oxide layer of Si tips, prior to the a-D film deposition. Scanning electron microscopy study showed that uniform a-D coatings were highly localized on the apex of individual Si tips. Study using high-resolution transmission electron microscopy and x-ray energy dispersive spectroscopy confirmed that the Si/a-D junction is free from the oxide interlayer. Field-emission measurements demonstrated that the removal of the native oxide layer and the a-D apex coating are important to stabilize and enhance the electron emission from Si field emitters.
J C She - One of the best experts on this subject based on the ideXlab platform.
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arrays of vacuum microdiodes using uniform diamondlike carbon tip Apexes
Applied Physics Letters, 2006Co-Authors: J C She, H Hao, S Z Deng, Jun Chen, S E Huq, L WangAbstract:The authors report the fabrication and characterization of vacuum microdiode arrays using Si microtip with uniform diamondlike-carbon (DLC) Apexes. The technique is based on the mass production procedure of integrated circuit devices. The typical turn-on voltage of the microdiode arrays is 50V, and it can provide emission current density up to 0.24A∕cm2 at 210V. The developed diodes with coated Apexes considerably surpass the diodes with virgin Si tip (98V∕0.058A∕cm2) in their performance. Thus, the microdiode with DLC coatings on Si tip Apexes are attractive for applications in charge neutralizers and microwave amplifiers. The underlying physics responsible for the device operation is discussed.
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field electron emission of si nanotips with Apexes of various compositions
Applied Physics Letters, 2005Co-Authors: J C She, S Z Deng, K Zhao, Jun ChenAbstract:We report procedure with use of self-assembled silicon carbide (SiC) nanomasks for preparation of ultrahigh-density Si nanotips. Si nanotips with SiC apex may be firstly prepared in a CH4∕H2 plasma treatment and in a subsequent H2 plasma etching a SiC apex may be converted into an amorphous silicon (a-Si) one with an additional function of sharpening the nanotips. A comparative study of the field electron emission from the Si nanotips with Apexes of SiC, a-Si and pure Si is carried out, and shows that nanotips with a-Si Apexes have not only the highest field enhancement factor but also the best emission uniformity. The physical origins for the above two improvements in field emission are discussed.
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Field electron emission from gated Si tip arrays with DLC Apexes
2005 International Vacuum Nanoelectronics Conference, 2005Co-Authors: J C She, H Hao, S Z Deng, Jun Chen, S E Huq, N.s. Xu, L WangAbstract:We report the fabrication and characterization of well-defined gated Si microtip arrays with diamond-like carbon (DLC) Apexes. It was found that for a 40/spl times/40 gated Si tip array with DLC Apexes, an emission current density up to 0.23 A/cm/sup 2/ can be obtained at an applied gate voltage of 200 V. The turn-on gate voltage of the devices is fall in a range of 38-50 V.
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silicon tip arrays with ultrathin amorphous diamond Apexes
Applied Physics Letters, 2002Co-Authors: J C She, S Z Deng, S E Huq, Jun ChenAbstract:Silicon (Si) tip emitter arrays with uniform, smooth, and ultrathin (∼2 nm) amorphous diamond (a-D) Apexes were fabricated. Aqueous buffer hydrofluoric acid and H2/Ar plasma have been employed to remove the native oxide layer of Si tips, prior to the a-D film deposition. Scanning electron microscopy study showed that uniform a-D coatings were highly localized on the apex of individual Si tips. Study using high-resolution transmission electron microscopy and x-ray energy dispersive spectroscopy confirmed that the Si/a-D junction is free from the oxide interlayer. Field-emission measurements demonstrated that the removal of the native oxide layer and the a-D apex coating are important to stabilize and enhance the electron emission from Si field emitters.
S Z Deng - One of the best experts on this subject based on the ideXlab platform.
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arrays of vacuum microdiodes using uniform diamondlike carbon tip Apexes
Applied Physics Letters, 2006Co-Authors: J C She, H Hao, S Z Deng, Jun Chen, S E Huq, L WangAbstract:The authors report the fabrication and characterization of vacuum microdiode arrays using Si microtip with uniform diamondlike-carbon (DLC) Apexes. The technique is based on the mass production procedure of integrated circuit devices. The typical turn-on voltage of the microdiode arrays is 50V, and it can provide emission current density up to 0.24A∕cm2 at 210V. The developed diodes with coated Apexes considerably surpass the diodes with virgin Si tip (98V∕0.058A∕cm2) in their performance. Thus, the microdiode with DLC coatings on Si tip Apexes are attractive for applications in charge neutralizers and microwave amplifiers. The underlying physics responsible for the device operation is discussed.
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field electron emission of si nanotips with Apexes of various compositions
Applied Physics Letters, 2005Co-Authors: J C She, S Z Deng, K Zhao, Jun ChenAbstract:We report procedure with use of self-assembled silicon carbide (SiC) nanomasks for preparation of ultrahigh-density Si nanotips. Si nanotips with SiC apex may be firstly prepared in a CH4∕H2 plasma treatment and in a subsequent H2 plasma etching a SiC apex may be converted into an amorphous silicon (a-Si) one with an additional function of sharpening the nanotips. A comparative study of the field electron emission from the Si nanotips with Apexes of SiC, a-Si and pure Si is carried out, and shows that nanotips with a-Si Apexes have not only the highest field enhancement factor but also the best emission uniformity. The physical origins for the above two improvements in field emission are discussed.
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Field electron emission from gated Si tip arrays with DLC Apexes
2005 International Vacuum Nanoelectronics Conference, 2005Co-Authors: J C She, H Hao, S Z Deng, Jun Chen, S E Huq, N.s. Xu, L WangAbstract:We report the fabrication and characterization of well-defined gated Si microtip arrays with diamond-like carbon (DLC) Apexes. It was found that for a 40/spl times/40 gated Si tip array with DLC Apexes, an emission current density up to 0.23 A/cm/sup 2/ can be obtained at an applied gate voltage of 200 V. The turn-on gate voltage of the devices is fall in a range of 38-50 V.
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silicon tip arrays with ultrathin amorphous diamond Apexes
Applied Physics Letters, 2002Co-Authors: J C She, S Z Deng, S E Huq, Jun ChenAbstract:Silicon (Si) tip emitter arrays with uniform, smooth, and ultrathin (∼2 nm) amorphous diamond (a-D) Apexes were fabricated. Aqueous buffer hydrofluoric acid and H2/Ar plasma have been employed to remove the native oxide layer of Si tips, prior to the a-D film deposition. Scanning electron microscopy study showed that uniform a-D coatings were highly localized on the apex of individual Si tips. Study using high-resolution transmission electron microscopy and x-ray energy dispersive spectroscopy confirmed that the Si/a-D junction is free from the oxide interlayer. Field-emission measurements demonstrated that the removal of the native oxide layer and the a-D apex coating are important to stabilize and enhance the electron emission from Si field emitters.
Ryo Kobayashi - One of the best experts on this subject based on the ideXlab platform.
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electronic structures of natural quantum dot system si stacking fault tetrahedron
Physica Status Solidi (c), 2005Co-Authors: Ryo KobayashiAbstract:Electronic structures of the Si stacking-fault tetrahedron (SFT) are studied, by using the first-principles calculations. It is shown that the electron and hole states of bulk Si are localized around the SFT faces, the SFT ridges, and the SFT Apexes. This feature occurs due to the unique atomic geometries in these structures, such as stacking-fault layers, dimer bonds, and the Si-dome structures. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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electronic structures of natural quantum dot system si stacking fault tetrahedron
Physica Status Solidi (c), 2005Co-Authors: Ryo KobayashiAbstract:Electronic structures of the Si stacking-fault tetrahedron (SFT) are studied, by using the first-principles calculations. It is shown that the electron and hole states of bulk Si are localized around the SFT faces, the SFT ridges, and the SFT Apexes. This feature occurs due to the unique atomic geometries in these structures, such as stacking-fault layers, dimer bonds, and the Si-dome structures. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
S S Kharintsev - One of the best experts on this subject based on the ideXlab platform.
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etchant based design of gold tip Apexes for plasmon enhanced raman spectromicroscopy
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 2017Co-Authors: S S Kharintsev, Alexander Alekseev, Joachim LoosAbstract:In this paper, we gain insight into the design and optimization of plasmonic (metallic) tips prepared with dc-pulsed voltage electrochemical etching gold wires, provided that, a duty cycle is self-tuned. Physically, it means that etching electrolyte attacks the gold wire equally for all pulse lengths, regardless of its surface shape. Etchant effect on the reproducibility of a curvature radius of the tip apex is demonstrated. It means that the gold conical tips can be designed chemically with a choice of proper etchant electrolyte. It is suggested to use a microtomed binary polymer blend consisting of polyamide and low density polyethylene, as a calibration grating, for optimizing and standardizing tip-enhanced Raman scattering performance.