The Experts below are selected from a list of 216 Experts worldwide ranked by ideXlab platform
H. B. Weber - One of the best experts on this subject based on the ideXlab platform.
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Mechanically controlled tunneling of a single Atomic Defect
Europhysics Letters (EPL), 2001Co-Authors: S. Brouër, Georg Weiss, H. B. WeberAbstract:This letter reports experiments on the conductance of mesoscopic Bi films which are polycrystalline and contain single Atomic two-level tunneling systems. These Defects act as electron scattering centers and give rise to random telegraph signals in the conductance. External strain, applied to the samples at low temperatures, changes the asymmetry energy of the double-well potential of the tunneling particle and thus controls its average dwell time in either well. The measurements allow to determine in a direct way the deformation potential of a particular tunneling Defect.
Luca Larcher - One of the best experts on this subject based on the ideXlab platform.
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Extracting Atomic Defect Properties From Leakage Current Temperature Dependence
IEEE Transactions on Electron Devices, 2018Co-Authors: Luca Larcher, Andrea Padovani, Francesco Maria Puglisi, Paolo PavanAbstract:In modern electronic devices, a variety of novel materials have been introduced such as transition metal oxides, chalcogenides, ferroelectric, and magnetic materials. The electrical response of such materials, used also as active layers, is strongly affected by Atomic Defects, which affect device performances, variability, and reliability. Extracting the Defect properties (i.e., density, energy, and Atomic nature) is, thus, crucial to both engineer the performances of electron devices and correctly project their scaling potential and reliability. In this paper, we propose a simple method to extract the Atomic properties of Defects from the thermal activation energy of the leakage current using a charge trapping relaxation model.
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Multiscale modeling of oxide RRAM devices for memory applications: from material properties to device performance
Journal of Computational Electronics, 2017Co-Authors: Luca Larcher, Andrea PadovaniAbstract:RRAM devices have been subjected to intense research efforts and are proposed for nonvolatile memory and neuromorphic applications. In this paper we describe a multiscale modeling platform connecting the microscopic properties of the resistive switching material to the electrical characteristics and operation of RRAM devices. The platform allows self-consistently modeling the charge and ion transport and the material structural modifications occurring during RRAM operations and reliability, i.e., conductive filament creation and partial disruption. It allows describing the electrical behavior (current, forming, switching, cycling, reliability tests) of RRAM devices in static and transient conditions and their dependence on external conditions (e.g., temperature). Thanks to the kinetic Monte Carlo approach, the inherent variability of physical processes is properly accounted for. Simulation results can be used both to investigate material properties (including Atomic Defect distributions) and to optimize stack and bias pulses for optimum device performances and reliability.
Andrea Padovani - One of the best experts on this subject based on the ideXlab platform.
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Extracting Atomic Defect Properties From Leakage Current Temperature Dependence
IEEE Transactions on Electron Devices, 2018Co-Authors: Luca Larcher, Andrea Padovani, Francesco Maria Puglisi, Paolo PavanAbstract:In modern electronic devices, a variety of novel materials have been introduced such as transition metal oxides, chalcogenides, ferroelectric, and magnetic materials. The electrical response of such materials, used also as active layers, is strongly affected by Atomic Defects, which affect device performances, variability, and reliability. Extracting the Defect properties (i.e., density, energy, and Atomic nature) is, thus, crucial to both engineer the performances of electron devices and correctly project their scaling potential and reliability. In this paper, we propose a simple method to extract the Atomic properties of Defects from the thermal activation energy of the leakage current using a charge trapping relaxation model.
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Multiscale modeling of oxide RRAM devices for memory applications: from material properties to device performance
Journal of Computational Electronics, 2017Co-Authors: Luca Larcher, Andrea PadovaniAbstract:RRAM devices have been subjected to intense research efforts and are proposed for nonvolatile memory and neuromorphic applications. In this paper we describe a multiscale modeling platform connecting the microscopic properties of the resistive switching material to the electrical characteristics and operation of RRAM devices. The platform allows self-consistently modeling the charge and ion transport and the material structural modifications occurring during RRAM operations and reliability, i.e., conductive filament creation and partial disruption. It allows describing the electrical behavior (current, forming, switching, cycling, reliability tests) of RRAM devices in static and transient conditions and their dependence on external conditions (e.g., temperature). Thanks to the kinetic Monte Carlo approach, the inherent variability of physical processes is properly accounted for. Simulation results can be used both to investigate material properties (including Atomic Defect distributions) and to optimize stack and bias pulses for optimum device performances and reliability.
Hiromichi Ohta - One of the best experts on this subject based on the ideXlab platform.
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Anisotropic Electrical Conductivity of Oxygen-Deficient Tungsten Oxide Films with Epitaxially Stabilized 1D Atomic Defect Tunnels.
ACS applied materials & interfaces, 2021Co-Authors: Gowoon Kim, Bin Feng, Sangkyun Ryu, Hai Jun Cho, Hyoungjeen Jeen, Yuichi Ikuhara, Hiromichi OhtaAbstract:Materials having an anisotropic crystal structure often exhibit anisotropy in the electrical conductivity. Compared to complex transition-metal oxides (TMOs), simple TMOs rarely show large anisotropic electrical conductivity due to their simple crystal structure. Here, we focus on the anisotropy in the electrical conductivity of a simple TMO, oxygen-deficient tungsten oxide (WOx) with an anisotropic crystal structure. We fabricated several WOx films by the pulsed laser deposition technique on the lattice-matched (110)-oriented LaAlO3 substrate under a controlled oxygen atmosphere. The crystallographic analyses of the WOx films revealed that highly dense Atomic Defect tunnels were aligned one-dimensionally (1D) along [001] LaAlO3. The electrical conductivity along the 1D Atomic Defect tunnels was ∼5 times larger than that across the tunnels. The present approach, introduction of 1D Atomic Defect tunnels, might be useful to design simple TMOs exhibiting anisotropic electrical conductivity.
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coexistence of high electron conduction and low heat conduction in tungsten oxide epitaxial films with 1d Atomic Defect tunnels
ACS Applied Electronic Materials, 2020Co-Authors: Gowoon Kim, Bin Feng, Hai Jun Cho, Yuichi Ikuhara, Yumiin Sheu, Hiromichi OhtaAbstract:Materials showing unusual electron and heat conduction such as the coexistence of high electron conduction and low heat conduction are essentially important to realize efficient thermal management ...
Paolo Pavan - One of the best experts on this subject based on the ideXlab platform.
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Extracting Atomic Defect Properties From Leakage Current Temperature Dependence
IEEE Transactions on Electron Devices, 2018Co-Authors: Luca Larcher, Andrea Padovani, Francesco Maria Puglisi, Paolo PavanAbstract:In modern electronic devices, a variety of novel materials have been introduced such as transition metal oxides, chalcogenides, ferroelectric, and magnetic materials. The electrical response of such materials, used also as active layers, is strongly affected by Atomic Defects, which affect device performances, variability, and reliability. Extracting the Defect properties (i.e., density, energy, and Atomic nature) is, thus, crucial to both engineer the performances of electron devices and correctly project their scaling potential and reliability. In this paper, we propose a simple method to extract the Atomic properties of Defects from the thermal activation energy of the leakage current using a charge trapping relaxation model.