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Atomic Layer Deposition

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Markku Leskelä – 1st expert on this subject based on the ideXlab platform

  • Atomic Layer Deposition of GeTe
    , 2020
    Co-Authors: Tiina Sarnet, Markku Leskelä, Mikko Ritala, Viljami Pore, Timo Hatanpää, Alejandro G. Schrott, Simone Raoux, Huai-yu Cheng, Asm Microchemistry Oy

    Abstract:

    GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to confirm characteristic ALD behavior. Film compositions were analyzed with energy dispersive x-ray analysis. Phase change properties of the films were studied using high-temperature x-ray diffraction, resistivity measurements and a static laser tester. The crystallization properties of ALD GeTe were found to be similar to those of sputtered films.

  • 4.05 – Atomic Layer Deposition
    Comprehensive Materials Processing, 2020
    Co-Authors: Markku Leskelä, Jaakko Niinistö, Mikko Ritala

    Abstract:

    Atomic Layer Deposition (ALD) is a technique for growing thin films for a wide range of applications. ALD is a special variant of the chemical vapor Deposition (CVD) technique where gaseous reactants (precursors) are introduced into the reaction chamber for forming the desired material via chemical surface reactions. A characteristic feature of ALD is that the precursors are pulsed alternately, one at a time, and separated by inert gas purging in order to avoid gas phase reactions. The successive, self-terminated surface reactions of the reactants enable controlled growth of the desired material. The unique self-limiting growth mechanism results in perfect conformality and thickness uniformity of the film even on complicated 3D structures.

  • Atomic Layer Deposition of Osmium
    Chemistry of Materials, 2011
    Co-Authors: Jani Hämäläinen, Mikko Ritala, Timo Sajavaara, Esa Puukilainen, Markku Leskelä

    Abstract:

    Growth of osmium thin films and nanoparticles by Atomic Layer Deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all Deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film Deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of Deposition cycles. Also conformal growth of Os thin films on three-dimensional (3-D) structures was confirmed.

Mikko Ritala – 2nd expert on this subject based on the ideXlab platform

  • Atomic Layer Deposition of GeTe
    , 2020
    Co-Authors: Tiina Sarnet, Markku Leskelä, Mikko Ritala, Viljami Pore, Timo Hatanpää, Alejandro G. Schrott, Simone Raoux, Huai-yu Cheng, Asm Microchemistry Oy

    Abstract:

    GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to confirm characteristic ALD behavior. Film compositions were analyzed with energy dispersive x-ray analysis. Phase change properties of the films were studied using high-temperature x-ray diffraction, resistivity measurements and a static laser tester. The crystallization properties of ALD GeTe were found to be similar to those of sputtered films.

  • 4.05 – Atomic Layer Deposition
    Comprehensive Materials Processing, 2020
    Co-Authors: Markku Leskelä, Jaakko Niinistö, Mikko Ritala

    Abstract:

    Atomic Layer Deposition (ALD) is a technique for growing thin films for a wide range of applications. ALD is a special variant of the chemical vapor Deposition (CVD) technique where gaseous reactants (precursors) are introduced into the reaction chamber for forming the desired material via chemical surface reactions. A characteristic feature of ALD is that the precursors are pulsed alternately, one at a time, and separated by inert gas purging in order to avoid gas phase reactions. The successive, self-terminated surface reactions of the reactants enable controlled growth of the desired material. The unique self-limiting growth mechanism results in perfect conformality and thickness uniformity of the film even on complicated 3D structures.

  • Atomic Layer Deposition of Osmium
    Chemistry of Materials, 2011
    Co-Authors: Jani Hämäläinen, Mikko Ritala, Timo Sajavaara, Esa Puukilainen, Markku Leskelä

    Abstract:

    Growth of osmium thin films and nanoparticles by Atomic Layer Deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all Deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film Deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of Deposition cycles. Also conformal growth of Os thin films on three-dimensional (3-D) structures was confirmed.

Myung M. Sung – 3rd expert on this subject based on the ideXlab platform

  • Atomic Layer Deposition of Titanium Oxide on Self-Assembled-MonoLayer-Coated Gold
    Chemistry of Materials, 2004
    Co-Authors: Hyung M. Sung-suh, Myung M. Sung

    Abstract:

    We demonstrate an Atomic Layer Deposition of TiO2 thin films on self-assembled monoLayers of ω-functionalized alkanethiolates. The TiO2 thin films were grown on OH-terminated alkanethiolate monoLayer-coated gold by Atomic Layer Deposition at 100 °C. The Atomic Layer Deposition of the TiO2 thin films is self-controlled and extremely linear relative to the number of cycles. Selective Deposition of the TiO2 thin film using Atomic Layer Deposition was accomplished with patterned self-assembled monoLayers as templates. Microcontact printing was done to prepare the patterned monoLayers of the alkanethiolates on gold substrates. The selective Atomic Layer Deposition is based on the fact that the TiO2 thin film is selectively deposited only on the regions exposing OH-terminated alkanethiolate monoLayers of the gold substrates, because the regions covered with CH3-terminated monoLayers do not have any functional group to react with precursors.

  • selective Atomic Layer Deposition of titanium oxide on patterned self assembled monoLayers formed by microcontact printing
    Langmuir, 2004
    Co-Authors: Mi H Park, Young J Jang, Hyung M Sungsuh, Myung M. Sung

    Abstract:

    We demonstrate a selective Atomic Layer Deposition of TiO2 thin films on patterned alkylsiloxane self-assembled monoLayers. Microcontact printing was done to prepare patterned monoLayers of the alkylsiloxane on Si substrates. The patterned monoLayers define and direct the selective Deposition of the TiO2 thin film using Atomic Layer Deposition. The selective Atomic Layer Deposition is based on the fact that the TiO2 thin film is selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monoLayers do not have any functional group to react with precursors.

  • A New Patterning Method Using Photocatalytic Lithography and Selective Atomic Layer Deposition
    Journal of the American Chemical Society, 2004
    Co-Authors: Myung M. Sung

    Abstract:

    We report a new patterning method using photocatalytic lithography of alkylsiloxane self-assembled monoLayers and selective Atomic Layer Deposition of thin films. The photocatalytic lithography is based on the fact that the decomposition rate of the alkylsiloxane monoLayers in contact with TiO2 is much faster than that with SiO2 under UV irradiation in air. The photocatalytic lithography, using a quartz plate coated with patterned TiO2 thin films, was done to prepare patterned monoLayers of the alkylsiloxane on Si substrates. A ZrO2 thin film was selectively deposited onto the monoLayer-patterned Si substrate by Atomic Layer Deposition.