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Markku Leskelä - One of the best experts on this subject based on the ideXlab platform.
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Atomic Layer Deposition of GeTe
2020Co-Authors: Tiina Sarnet, Markku Leskelä, Mikko Ritala, Viljami Pore, Timo Hatanpää, Alejandro G. Schrott, Simone Raoux, Huai-yu Cheng, Asm Microchemistry OyAbstract:GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to confirm characteristic ALD behavior. Film compositions were analyzed with energy dispersive x-ray analysis. Phase change properties of the films were studied using high-temperature x-ray diffraction, resistivity measurements and a static laser tester. The crystallization properties of ALD GeTe were found to be similar to those of sputtered films.
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4.05 – Atomic Layer Deposition
Comprehensive Materials Processing, 2020Co-Authors: Markku Leskelä, Jaakko Niinistö, Mikko RitalaAbstract:Atomic Layer Deposition (ALD) is a technique for growing thin films for a wide range of applications. ALD is a special variant of the chemical vapor Deposition (CVD) technique where gaseous reactants (precursors) are introduced into the reaction chamber for forming the desired material via chemical surface reactions. A characteristic feature of ALD is that the precursors are pulsed alternately, one at a time, and separated by inert gas purging in order to avoid gas phase reactions. The successive, self-terminated surface reactions of the reactants enable controlled growth of the desired material. The unique self-limiting growth mechanism results in perfect conformality and thickness uniformity of the film even on complicated 3D structures.
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Atomic Layer Deposition of Osmium
Chemistry of Materials, 2011Co-Authors: Jani Hämäläinen, Mikko Ritala, Timo Sajavaara, Esa Puukilainen, Markku LeskeläAbstract:Growth of osmium thin films and nanoparticles by Atomic Layer Deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all Deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film Deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of Deposition cycles. Also conformal growth of Os thin films on three-dimensional (3-D) structures was confirmed.
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Atomic Layer Deposition of ruthenium films on strontium titanate.
Journal of Nanoscience and Nanotechnology, 2011Co-Authors: Kaupo Kukli, Marianna Kemell, Mikko Ritala, Jun Lu, Lars Hultman, Stefan Riedel, Jonas Sundqvist, Markku LeskeläAbstract:Atomic Layer Deposition of ruthenium on SrTiO(3) Layers was investigated using (C(2)H(5)C(5)H(4)) center dot (NC(4)H(4))Ru and air as precursors. For comparison, the growth was studied also on ZrO( ...
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Ta2O5- and TiO2-based nanostructures made by Atomic Layer Deposition.
Nanotechnology, 2009Co-Authors: Marianna Kemell, Mikko Ritala, Viljami Pore, Emma Härkönen, Markku LeskeläAbstract:Nanotubular Ta2O5- and TiO2-based structures were prepared by Atomic Layer Deposition of Ta2O5 and TiO2 thin films, conformally on pore walls of porous alumina membranes. Both self-supporting alumina membranes and Si-supported thin-film membranes were studied as templates. Long Ta2O5 and TiO2 nanotubes were prepared successfully with the self-supporting membranes. The TiO2 nanotubes showed photocatalytic activity in methylene blue degradation under UV illumination. The Ta2O5 and TiO2 nanotubes were further modified by depositing Pt nanoparticles inside them. The Si-supported thin-film membranes were used as templates for the preparation of robust Ta2O5-coated Ni nanorod arrays on a Si substrate using electroDeposition, chemical etching and Atomic Layer Deposition. In addition to photocatalysis, the nanostructures prepared in this work may find applications as other catalysts and as solid-state or electrochemical capacitors.
Mikko Ritala - One of the best experts on this subject based on the ideXlab platform.
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Atomic Layer Deposition of GeTe
2020Co-Authors: Tiina Sarnet, Markku Leskelä, Mikko Ritala, Viljami Pore, Timo Hatanpää, Alejandro G. Schrott, Simone Raoux, Huai-yu Cheng, Asm Microchemistry OyAbstract:GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to confirm characteristic ALD behavior. Film compositions were analyzed with energy dispersive x-ray analysis. Phase change properties of the films were studied using high-temperature x-ray diffraction, resistivity measurements and a static laser tester. The crystallization properties of ALD GeTe were found to be similar to those of sputtered films.
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4.05 – Atomic Layer Deposition
Comprehensive Materials Processing, 2020Co-Authors: Markku Leskelä, Jaakko Niinistö, Mikko RitalaAbstract:Atomic Layer Deposition (ALD) is a technique for growing thin films for a wide range of applications. ALD is a special variant of the chemical vapor Deposition (CVD) technique where gaseous reactants (precursors) are introduced into the reaction chamber for forming the desired material via chemical surface reactions. A characteristic feature of ALD is that the precursors are pulsed alternately, one at a time, and separated by inert gas purging in order to avoid gas phase reactions. The successive, self-terminated surface reactions of the reactants enable controlled growth of the desired material. The unique self-limiting growth mechanism results in perfect conformality and thickness uniformity of the film even on complicated 3D structures.
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Atomic Layer Deposition of Osmium
Chemistry of Materials, 2011Co-Authors: Jani Hämäläinen, Mikko Ritala, Timo Sajavaara, Esa Puukilainen, Markku LeskeläAbstract:Growth of osmium thin films and nanoparticles by Atomic Layer Deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all Deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film Deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of Deposition cycles. Also conformal growth of Os thin films on three-dimensional (3-D) structures was confirmed.
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Atomic Layer Deposition of ruthenium films on strontium titanate.
Journal of Nanoscience and Nanotechnology, 2011Co-Authors: Kaupo Kukli, Marianna Kemell, Mikko Ritala, Jun Lu, Lars Hultman, Stefan Riedel, Jonas Sundqvist, Markku LeskeläAbstract:Atomic Layer Deposition of ruthenium on SrTiO(3) Layers was investigated using (C(2)H(5)C(5)H(4)) center dot (NC(4)H(4))Ru and air as precursors. For comparison, the growth was studied also on ZrO( ...
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Ta2O5- and TiO2-based nanostructures made by Atomic Layer Deposition.
Nanotechnology, 2009Co-Authors: Marianna Kemell, Mikko Ritala, Viljami Pore, Emma Härkönen, Markku LeskeläAbstract:Nanotubular Ta2O5- and TiO2-based structures were prepared by Atomic Layer Deposition of Ta2O5 and TiO2 thin films, conformally on pore walls of porous alumina membranes. Both self-supporting alumina membranes and Si-supported thin-film membranes were studied as templates. Long Ta2O5 and TiO2 nanotubes were prepared successfully with the self-supporting membranes. The TiO2 nanotubes showed photocatalytic activity in methylene blue degradation under UV illumination. The Ta2O5 and TiO2 nanotubes were further modified by depositing Pt nanoparticles inside them. The Si-supported thin-film membranes were used as templates for the preparation of robust Ta2O5-coated Ni nanorod arrays on a Si substrate using electroDeposition, chemical etching and Atomic Layer Deposition. In addition to photocatalysis, the nanostructures prepared in this work may find applications as other catalysts and as solid-state or electrochemical capacitors.
Myung M. Sung - One of the best experts on this subject based on the ideXlab platform.
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Atomic Layer Deposition of Titanium Oxide on Self-Assembled-MonoLayer-Coated Gold
Chemistry of Materials, 2004Co-Authors: Hyung M. Sung-suh, Myung M. SungAbstract:We demonstrate an Atomic Layer Deposition of TiO2 thin films on self-assembled monoLayers of ω-functionalized alkanethiolates. The TiO2 thin films were grown on OH-terminated alkanethiolate monoLayer-coated gold by Atomic Layer Deposition at 100 °C. The Atomic Layer Deposition of the TiO2 thin films is self-controlled and extremely linear relative to the number of cycles. Selective Deposition of the TiO2 thin film using Atomic Layer Deposition was accomplished with patterned self-assembled monoLayers as templates. Microcontact printing was done to prepare the patterned monoLayers of the alkanethiolates on gold substrates. The selective Atomic Layer Deposition is based on the fact that the TiO2 thin film is selectively deposited only on the regions exposing OH-terminated alkanethiolate monoLayers of the gold substrates, because the regions covered with CH3-terminated monoLayers do not have any functional group to react with precursors.
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selective Atomic Layer Deposition of titanium oxide on patterned self assembled monoLayers formed by microcontact printing
Langmuir, 2004Co-Authors: Mi H Park, Young J Jang, Hyung M Sungsuh, Myung M. SungAbstract:We demonstrate a selective Atomic Layer Deposition of TiO2 thin films on patterned alkylsiloxane self-assembled monoLayers. Microcontact printing was done to prepare patterned monoLayers of the alkylsiloxane on Si substrates. The patterned monoLayers define and direct the selective Deposition of the TiO2 thin film using Atomic Layer Deposition. The selective Atomic Layer Deposition is based on the fact that the TiO2 thin film is selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monoLayers do not have any functional group to react with precursors.
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A New Patterning Method Using Photocatalytic Lithography and Selective Atomic Layer Deposition
Journal of the American Chemical Society, 2004Co-Authors: Myung M. SungAbstract:We report a new patterning method using photocatalytic lithography of alkylsiloxane self-assembled monoLayers and selective Atomic Layer Deposition of thin films. The photocatalytic lithography is based on the fact that the decomposition rate of the alkylsiloxane monoLayers in contact with TiO2 is much faster than that with SiO2 under UV irradiation in air. The photocatalytic lithography, using a quartz plate coated with patterned TiO2 thin films, was done to prepare patterned monoLayers of the alkylsiloxane on Si substrates. A ZrO2 thin film was selectively deposited onto the monoLayer-patterned Si substrate by Atomic Layer Deposition.
Yangdo Kim - One of the best experts on this subject based on the ideXlab platform.
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Remote plasma enhanced Atomic Layer Deposition of TiN thin films using metalorganic precursor
Journal of Vacuum Science & Technology A: Vacuum Surfaces and Films, 2004Co-Authors: Ju Youn Kim, Do Youl Kim, Sangwon Seo, Hyeongtag Jeon, Yangdo KimAbstract:Atomic Layer Deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
Adriaan J. M. Mackus - One of the best experts on this subject based on the ideXlab platform.
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Approaches and opportunities for area-selective Atomic Layer Deposition
2018 International Symposium on VLSI Technology Systems and Application (VLSI-TSA), 2018Co-Authors: Adriaan J. M. MackusAbstract:With conventional semiconductor fabrication based on top-down processing reaching its limits in terms of patterning resolution and alignment, there is increasing interest in the implementation of bottom-up fabrication steps. In this contribution, several approaches for bottom-up processing by area-selective Atomic Layer Deposition (ALD) will be reviewed, and the application possibilities and the main challenges in the field will be discussed.
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Room-temperature Atomic Layer Deposition of platinum
Chemistry of Materials, 2013Co-Authors: Adriaan J. M. Mackus, Ageeth A Bol, Harm C M Knoops, Diana Garcia-alonso, Wilhelmus M. M. KesselsAbstract:Plasma-assisted Atomic Layer Deposition (ALD) processes were developed for the Deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 μΩ cm were obtained for processes consisting of MeCpPtMe3 dosing, O2 plasma exposure, and H2 gas or H2 plasma exposure. The H2 pulses were used to reduce the PtOx that is otherwise deposited at low substrate temperatures. It is shown that the processes enable the Deposition of Pt on polymer, textile, and paper substrates, which is a significant result as it demonstrates the broad application range of Pt ALD, including applications involving temperature-sensitive materials.
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Nanopatterning by direct-write Atomic Layer Deposition
Nanoscale, 2012Co-Authors: Adriaan J. M. Mackus, Saf Bas Dielissen, Jjl Hans Mulders, Wilhelmus M. M. KesselsAbstract:A novel direct-write approach is presented, which relies on area-selective Atomic Layer Deposition on seed Layer patterns deposited by electron beam induced Deposition. The method enables the nanopatterning of high-quality material with a lateral resolution of only ∼10 nm. Direct-write ALD is a viable alternative to lithography-based patterning with a better compatibility with sensitive nanomaterials.