The Experts below are selected from a list of 105447 Experts worldwide ranked by ideXlab platform
Fengzhou Fang - One of the best experts on this subject based on the ideXlab platform.
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rake angle effect in cutting based single Atomic Layer removal
Journal of Manufacturing Processes, 2020Co-Authors: Fengzhou FangAbstract:Abstract When minimum cutting depth is down to a single Atomic Layer, two portions of the cutting tool, namely, cutting edge and lowest atoms of the cutting tool, are involved in the cutting-induced material removal. Correspondingly, there are different critical rake angles for those two portions of the tool, different from the nominal rake angle in conventional cutting and edge radius-induced effective rake angle in nanocutting. Both they should be considered in Atomic and close-to-Atomic cutting to obtain the defect-free processed surface with an ideal crystalline structure. Molecular dynamics modelling is carried out to investigate the critical rake angles to enable single Atomic Layer removal on monocrystalline Cu (1 1 1) surface. The analysis results clearly indicate that the critical rake angles of nanometric cutting edge and the lowest tool atoms for single Atomic Layer removal are among the range of (–70°, –65°) and (–17°, –14°), respectively. To achieve single Atomic Layer removal, the tool edge radius is suggested to be not greater than 2 nm. The research findings would provide theoretical guidelines to the cutting tool design for the application of mechanical cutting of high-performance Atomic scale devices.
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cutting based single Atomic Layer removal mechanism of monocrystalline copper edge radius effect
Nanoscale Research Letters, 2019Co-Authors: Wenkun Xie, Fengzhou FangAbstract:The ultimate objective of mechanical cutting is to down minimum chip thickness to single Atomic Layer. In this study, the cutting-based single Atomic Layer removal mechanism on monocrystalline copper is investigated by a series of molecular dynamics analysis. The research findings report that when cutting depth decreases to Atomic scale, minimum chip thickness could be down to single Atomic Layer by mechanical cutting using rounded edge tool. The material removal behaviour during cutting-based single Atomic Layer removal exhibits four characteristics, including chip formation by shearing-stress driven dislocation motion, elastic deformation on the processed surface, Atomic sizing effect, and cutting-edge radius effect. Based on this understanding, a new cutting model is proposed to study the material removal behaviour in cutting-based single Atomic Layer removal process, significantly different from those for nanocutting and conventional cutting. The outcomes provide theoretical support for the research and development of the Atomic and close-to-Atomic scale manufacturing technology.
Moungi G Awendi - One of the best experts on this subject based on the ideXlab platform.
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correction colloidal Atomic Layer deposition growth of pbs cds core shell quantum dots
Chemical Communications, 2017Co-Authors: Michel Nasilowski, Lea Nienhaus, Sophie N Ertram, Moungi G AwendiAbstract:Correction for ‘Colloidal Atomic Layer deposition growth of PbS/CdS core/shell quantum dots’ by Michel Nasilowski et al., Chem. Commun., 2017, 53, 869–872.
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colloidal Atomic Layer deposition growth of pbs cds core shell quantum dots
Chemical Communications, 2017Co-Authors: Michel Nasilowski, Lea Nienhaus, Sophie N Ertram, Moungi G AwendiAbstract:Traditionally, PbS/CdS quantum dots (QDs) have been synthesized via a cation exchange method, making fine control over shell growth challenging. We show here that colloidal Atomic Layer deposition (c-ALD) allows for the sequential growth of single monoLayers of the shell, thus creating a ‘true’ CdS shell on PbS QDs.
Kostya Ostrikov - One of the best experts on this subject based on the ideXlab platform.
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Atomic Layer soft plasma etching of mos2
Scientific Reports, 2016Co-Authors: Shaoqing Xiao, Peng Xiao, Xuecheng Zhang, Dawei Yan, Fang Qin, Zhao Jun Han, Kostya OstrikovAbstract:Transition from multi-Layer to monoLayer and sub-monoLayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires Atomic-Layer-precision thinning of bulk MoS2 without damaging the remaining Layers, which presently remains elusive. Here we report a soft, selective and high-throughput Atomic-Layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 Layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 Layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 Layers including monoLayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.
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Atomic Layer soft plasma etching of mos2
Science & Engineering Faculty, 2016Co-Authors: Shaoqing Xiao, Peng Xiao, Xuecheng Zhang, Dawei Yan, Fang Qin, Zhao Jun Han, Kostya OstrikovAbstract:Transition from multi-Layer to monoLayer and sub-monoLayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS 2 . This transition requires Atomic-Layer-precision thinning of bulk MoS 2 without damaging the remaining Layers, which presently remains elusive. Here we report a soft, selective and high-throughput Atomic-Layer-precision etching of MoS 2 in SF 6 + N 2 plasmas with low-energy ( 2 Layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO 2 substrate and the remaining MoS 2 Layers. The etching rates can be tuned to achieve complete MoS 2 removal and any desired number of MoS 2 Layers including monoLayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS 2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.
Michel Nasilowski - One of the best experts on this subject based on the ideXlab platform.
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correction colloidal Atomic Layer deposition growth of pbs cds core shell quantum dots
Chemical Communications, 2017Co-Authors: Michel Nasilowski, Lea Nienhaus, Sophie N Ertram, Moungi G AwendiAbstract:Correction for ‘Colloidal Atomic Layer deposition growth of PbS/CdS core/shell quantum dots’ by Michel Nasilowski et al., Chem. Commun., 2017, 53, 869–872.
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colloidal Atomic Layer deposition growth of pbs cds core shell quantum dots
Chemical Communications, 2017Co-Authors: Michel Nasilowski, Lea Nienhaus, Sophie N Ertram, Moungi G AwendiAbstract:Traditionally, PbS/CdS quantum dots (QDs) have been synthesized via a cation exchange method, making fine control over shell growth challenging. We show here that colloidal Atomic Layer deposition (c-ALD) allows for the sequential growth of single monoLayers of the shell, thus creating a ‘true’ CdS shell on PbS QDs.
Stacey F. Bent - One of the best experts on this subject based on the ideXlab platform.
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area selective Atomic Layer deposition on chemically similar materials achieving selectivity on oxide oxide patterns
Chemistry of Materials, 2021Co-Authors: Tzuling Liu, Stacey F. BentAbstract:Area-selective Atomic Layer deposition (AS-ALD) is attracting increasing interest, but the process usually requires substrate materials with substantially different chemical properties. We introduc...
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synthesis of doped ternary and quaternary materials by Atomic Layer deposition a review
Chemistry of Materials, 2019Co-Authors: Adriaan J. M. Mackus, Joel R Schneider, Callisto Macisaac, Jon G Baker, Stacey F. BentAbstract:In the past decade, Atomic Layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality...
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nanoengineering heterogeneous catalysts by Atomic Layer deposition
Annual Review of Chemical and Biomolecular Engineering, 2017Co-Authors: Joseph A Singh, Nuoya Yang, Stacey F. BentAbstract:A new generation of catalysts is needed to meet society's energy and resource requirements. Current catalyst synthesis does not fully achieve optimum control of composition, size, and structure. Atomic Layer deposition (ALD) is an emerging technique that allows for synthesis of highly controlled catalysts in the form of films, nanoparticles, and single sites. The addition of ALD coatings can also be used to introduce promoters and improve the stability of traditional catalysts. Evolving research shows promise for applying ALD to understand catalytically active sites and create next-generation catalysts using advanced 3D nanostructures.
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selective metal deposition at graphene line defects by Atomic Layer deposition
Nature Communications, 2014Co-Authors: Richard Johnson, Jukka T Tanskanen, Changhyun Pang, Stacey F. BentAbstract:Defects in graphene strongly influence the material's physical properties, leading to the suggestion that defects might be tuned to improve performance. Here, via Atomic Layer deposition, the authors selectively deposit Pt at graphene line defects and yield a superior platform for sensing applications.