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Auger Coefficient

The Experts below are selected from a list of 219 Experts worldwide ranked by ideXlab platform

Bernd Witzigmann – 1st expert on this subject based on the ideXlab platform

  • on the uncertainty of the Auger recombination Coefficient extracted from ingan gan light emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann

    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • On the uncertainty of the Auger recombination Coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann

    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • Auger recombination and carrier transport effects in III-nitride quantum well light emitting diodes
    Proceedings of SPIE, 2013
    Co-Authors: Marcus Deppner, Friedhard Romer, Bernd Witzigmann

    Abstract:

    Gallium nitride based light emitting diodes (LEDs) have established as powerful devices, that are well suited for
    general lighting. Despite the progress within the recent years the so-called “efficiency droop” is still a central
    issue of nitride-based LED research. Up to now, no widely accepted explanation is available for the reduction of
    the internal quantum efficiency with increasing injection current.
    We report on a novel mechanism contributing to efficiency droop, that combines two of the previously reported
    effects: Auger recombination and carrier leakage. A sophisticated Auger model, that takes account of the overlap
    of the wave functions, is extended to model the energy transfer towards the third involved carrier. This carrier
    is assumed to be expelled from the well and regenerated in the continuum carrier population, where it can
    contribute to carrier leakage.
    A physics-based simulation of a quantum well LED employing a semi-classical approach has been carried out
    to demonstrate the impact of this effect. Depending on the parametrization, the inclusion of Auger expulsion
    reduces the Auger Coefficient up to 50% when compared to a standard Auger model, which could explain the
    discrepancy between calculated and experimentally extracted Auger Coefficients.

Joachim Piprek – 2nd expert on this subject based on the ideXlab platform

  • on the uncertainty of the Auger recombination Coefficient extracted from ingan gan light emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann

    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • On the uncertainty of the Auger recombination Coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann

    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

Friedhard Romer – 3rd expert on this subject based on the ideXlab platform

  • on the uncertainty of the Auger recombination Coefficient extracted from ingan gan light emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann

    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • On the uncertainty of the Auger recombination Coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann

    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • Auger recombination and carrier transport effects in III-nitride quantum well light emitting diodes
    Proceedings of SPIE, 2013
    Co-Authors: Marcus Deppner, Friedhard Romer, Bernd Witzigmann

    Abstract:

    Gallium nitride based light emitting diodes (LEDs) have established as powerful devices, that are well suited for
    general lighting. Despite the progress within the recent years the so-called “efficiency droop” is still a central
    issue of nitride-based LED research. Up to now, no widely accepted explanation is available for the reduction of
    the internal quantum efficiency with increasing injection current.
    We report on a novel mechanism contributing to efficiency droop, that combines two of the previously reported
    effects: Auger recombination and carrier leakage. A sophisticated Auger model, that takes account of the overlap
    of the wave functions, is extended to model the energy transfer towards the third involved carrier. This carrier
    is assumed to be expelled from the well and regenerated in the continuum carrier population, where it can
    contribute to carrier leakage.
    A physics-based simulation of a quantum well LED employing a semi-classical approach has been carried out
    to demonstrate the impact of this effect. Depending on the parametrization, the inclusion of Auger expulsion
    reduces the Auger Coefficient up to 50% when compared to a standard Auger model, which could explain the
    discrepancy between calculated and experimentally extracted Auger Coefficients.