Auger Coefficient

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Bernd Witzigmann - One of the best experts on this subject based on the ideXlab platform.

  • on the uncertainty of the Auger recombination Coefficient extracted from ingan gan light emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann
    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • On the uncertainty of the Auger recombination Coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann
    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • Auger recombination and carrier transport effects in III-nitride quantum well light emitting diodes
    Proceedings of SPIE, 2013
    Co-Authors: Marcus Deppner, Friedhard Romer, Bernd Witzigmann
    Abstract:

    Gallium nitride based light emitting diodes (LEDs) have established as powerful devices, that are well suited for general lighting. Despite the progress within the recent years the so-called “efficiency droop” is still a central issue of nitride-based LED research. Up to now, no widely accepted explanation is available for the reduction of the internal quantum efficiency with increasing injection current. We report on a novel mechanism contributing to efficiency droop, that combines two of the previously reported effects: Auger recombination and carrier leakage. A sophisticated Auger model, that takes account of the overlap of the wave functions, is extended to model the energy transfer towards the third involved carrier. This carrier is assumed to be expelled from the well and regenerated in the continuum carrier population, where it can contribute to carrier leakage. A physics-based simulation of a quantum well LED employing a semi-classical approach has been carried out to demonstrate the impact of this effect. Depending on the parametrization, the inclusion of Auger expulsion reduces the Auger Coefficient up to 50% when compared to a standard Auger model, which could explain the discrepancy between calculated and experimentally extracted Auger Coefficients.

Joachim Piprek - One of the best experts on this subject based on the ideXlab platform.

  • on the uncertainty of the Auger recombination Coefficient extracted from ingan gan light emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann
    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • On the uncertainty of the Auger recombination Coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann
    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

Friedhard Romer - One of the best experts on this subject based on the ideXlab platform.

  • on the uncertainty of the Auger recombination Coefficient extracted from ingan gan light emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann
    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • On the uncertainty of the Auger recombination Coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
    Applied Physics Letters, 2015
    Co-Authors: Joachim Piprek, Friedhard Romer, Bernd Witzigmann
    Abstract:

    III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination Coefficient C is typically obtained from efficiency measurements using mathematical models. However, C Coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger Coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

  • Auger recombination and carrier transport effects in III-nitride quantum well light emitting diodes
    Proceedings of SPIE, 2013
    Co-Authors: Marcus Deppner, Friedhard Romer, Bernd Witzigmann
    Abstract:

    Gallium nitride based light emitting diodes (LEDs) have established as powerful devices, that are well suited for general lighting. Despite the progress within the recent years the so-called “efficiency droop” is still a central issue of nitride-based LED research. Up to now, no widely accepted explanation is available for the reduction of the internal quantum efficiency with increasing injection current. We report on a novel mechanism contributing to efficiency droop, that combines two of the previously reported effects: Auger recombination and carrier leakage. A sophisticated Auger model, that takes account of the overlap of the wave functions, is extended to model the energy transfer towards the third involved carrier. This carrier is assumed to be expelled from the well and regenerated in the continuum carrier population, where it can contribute to carrier leakage. A physics-based simulation of a quantum well LED employing a semi-classical approach has been carried out to demonstrate the impact of this effect. Depending on the parametrization, the inclusion of Auger expulsion reduces the Auger Coefficient up to 50% when compared to a standard Auger model, which could explain the discrepancy between calculated and experimentally extracted Auger Coefficients.

G. G. Zegrya - One of the best experts on this subject based on the ideXlab platform.

  • Temperature dependence of the effective Coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers
    Semiconductors, 2005
    Co-Authors: I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, Yu. M. Shernyakov, E. S. Semenova, A. P. Vasil’ev, A. E. Zhukov, V. M. Ustinov, G. G. Zegrya
    Abstract:

    Semiconductor laser heterostructures containing five and ten sheets of InAs/GaAs QDs on GaAs substrates, with an emission wavelength of ∼1.3 μm, have been studied. Dependences of the nonradiative lifetime and effective Auger Coefficient in QDs are obtained from an analysis of temperature and current dependences of the efficiency of spontaneous radiative recombination. The zero-threshold Auger recombination channel in QDs is shown to dominate at low (below 200 K) temperature, whereas at higher temperatures the quasithreshold channel becomes dominant. The effective 3D Auger Coefficient is estimated in the approximation of a spherical QD, and a good agreement with the experimental data is obtained.

  • temperature dependence of the effective Coefficient of Auger recombination in 1 3 μm inas gaas qd lasers
    Semiconductors, 2005
    Co-Authors: I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, E. S. Semenova, A. E. Zhukov, V. M. Ustinov, Yu N Gordeev, A P Vasilev, G. G. Zegrya
    Abstract:

    Semiconductor laser heterostructures containing five and ten sheets of InAs/GaAs QDs on GaAs substrates, with an emission wavelength of ∼1.3 μm, have been studied. Dependences of the nonradiative lifetime and effective Auger Coefficient in QDs are obtained from an analysis of temperature and current dependences of the efficiency of spontaneous radiative recombination. The zero-threshold Auger recombination channel in QDs is shown to dominate at low (below 200 K) temperature, whereas at higher temperatures the quasithreshold channel becomes dominant. The effective 3D Auger Coefficient is estimated in the approximation of a spherical QD, and a good agreement with the experimental data is obtained.

  • A numerical calculation of Auger recombination Coefficients for InGaAsP/InP quantum well heterostructures
    Semiconductors, 2000
    Co-Authors: N. A. Gun’ko, A. S. Polkovnikov, G. G. Zegrya
    Abstract:

    Auger recombination Coefficients are calculated numerically for InGaAsP/InP quantum well heterostructures. In narrow quantum wells, the quasi-threshold and thresholdless mechanisms mainly contribute to the Auger recombination Coefficient. For the processes involving two electrons and a heavy hole (CHCC) or an electron and two heavy holes with a transition of one of the holes to the spin-orbit split-off band (CHHS), the Auger recombination Coefficients depend on temperature only slightly in a wide temperature range. The dependence of the Auger Coefficient on the quantum well width is analyzed and found to be nonmonotonic.

  • Auger recombination in strained quantum well InAlAsSb/GaSb structures for 3–4 µm lasers
    IEE Proceedings - Optoelectronics, 1997
    Co-Authors: A.d. Andreev, G. G. Zegrya
    Abstract:

    Thresholdless Auger recombination in InAlAsSb strained quantum wells is studied theoretically. Analytical formulas for the Auger transition matrix element have been derived in the framework of the Kane model. A detailed analysis of overlap integrals between initial and final states of carriers has shown that the strain and light-heavy hole mixing affect both qualitatively and quantitatively the overlap integral between the electron and hole states. The Auger recombination Coefficient is found to have a strong dependence on strain, quantum well width and emission wavelength, but weak dependence on temperature. The Auger Coefficient temperature dependence is shown to be very sensitive to the bandgap variation with temperature.

  • Theoretical performance of 3 to 4-um compressively strained InAlAsSb QW lasers
    In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, 1997
    Co-Authors: Aleksey D. Andreev, G. G. Zegrya
    Abstract:

    Threshold characteristics of compressively strained InAlAsSb 3 - 4 micrometers MQW lasers have been studied theoretically. The Auger Coefficient dependence on the QW composition has been calculated. It is shown that the internal absorption decreases with strain, which results in weaker temperature dependence of the threshold carrier concentration. It is demonstrated that the strain considerably improves threshold characteristics of InAlAsSb QW laser and increases its limiting operation temperature.

Meng Zhang - One of the best experts on this subject based on the ideXlab platform.

  • Auger recombination in iii nitride nanowires and its effect on nanowire light emitting diode characteristics
    Nano Letters, 2011
    Co-Authors: Meng Zhang, Pallab Bhattacharya
    Abstract:

    We have measured the Auger recombination Coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1 × 1011 cm−2 and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger Coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C0, defined as the Auger Coefficient at low excitation, are 6.1 × 10−32 and 4.1 × 10−33 cm6·s−1 in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm2.

  • Direct measurement of Auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
    Applied Physics Letters, 2009
    Co-Authors: Meng Zhang, J. Singh, P. K. Bhattacharya, J. M. Hinckley
    Abstract:

    The Auger recombination Coefficient in In0.1Ga0.9N/GaN quantum wells, emitting at 407 nm has been determined from large signal modulation measurements on lasers in which these quantum wells form the gain region. A value of 1.5×10−30 cm6 s−1 is determined for the Auger Coefficient at room temperature, which is used to analyze the reported efficiency characteristics of 410 nm In0.1Ga0.9N/GaN quantum wells light emitting diodes. The calculated efficiencies agree remarkably well with the measured ones. It is apparent that Auger recombination is largely responsible for limiting device efficiencies at high injection currents.