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C F Mcconville - One of the best experts on this subject based on the ideXlab platform.
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valence Band Offset of the zno aln heterojunction determined by x ray photoemission spectroscopy
Applied Physics Letters, 2008Co-Authors: Tim D. Veal, P. D. C. King, S. A. Hatfield, L R Bailey, J C Moreno, C F Mcconville, Eric Frayssinet, Fabrice Semond, Bernard Martel, J. Zúñiga-pérezAbstract:The valence Band Offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence Band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction Band Offset of 3.29±0.20 eV, this indicates that a type-II (staggered) Band line up exists at the ZnO/AlN heterojunction. Using the III-nitride Band Offsets and the transitivity rule, the valence Band Offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.
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inn gan valence Band Offset high resolution x ray photoemission spectroscopy measurements
Physical Review B, 2008Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F McconvilleAbstract:High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence Band Offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction Band Offset of 2.22 +/- 0.10 eV.
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inn gan valence Band Offset high resolution x ray photoemission spectroscopy measurements
Physical Review B, 2008Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F McconvilleAbstract:High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence Band Offset of wurtzite-InN/GaN(0001) heterojunctions to be $0.58\ifmmode\pm\else\textpm\fi{}0.08\text{ }\text{eV}$. This is discussed within the context of previous measurements and calculations and is in agreement with the value of $0.52\ifmmode\pm\else\textpm\fi{}0.14\text{ }\text{eV}$ determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction Band Offset of $2.22\ifmmode\pm\else\textpm\fi{}0.10\text{ }\text{eV}$.
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valence Band Offset of inn aln heterojunctions measured by x ray photoelectron spectroscopy
Applied Physics Letters, 2007Co-Authors: P. D. C. King, Tim D. Veal, C F Mcconville, P H Jefferson, Tao Wang, P J Parbrook, W J SchaffAbstract:X-ray photoelectron spectroscopy has been used to measure the valence Band Offset of the InN/BaTiO3 heterojunction. It is found that a type-I Band alignment forms at the interface. The valence Band Offset (VBO) and conduction Band Offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
P. D. C. King - One of the best experts on this subject based on the ideXlab platform.
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valence Band Offset of the zno aln heterojunction determined by x ray photoemission spectroscopy
Applied Physics Letters, 2008Co-Authors: Tim D. Veal, P. D. C. King, S. A. Hatfield, L R Bailey, J C Moreno, C F Mcconville, Eric Frayssinet, Fabrice Semond, Bernard Martel, J. Zúñiga-pérezAbstract:The valence Band Offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence Band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction Band Offset of 3.29±0.20 eV, this indicates that a type-II (staggered) Band line up exists at the ZnO/AlN heterojunction. Using the III-nitride Band Offsets and the transitivity rule, the valence Band Offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.
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inn gan valence Band Offset high resolution x ray photoemission spectroscopy measurements
Physical Review B, 2008Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F McconvilleAbstract:High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence Band Offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction Band Offset of 2.22 +/- 0.10 eV.
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inn gan valence Band Offset high resolution x ray photoemission spectroscopy measurements
Physical Review B, 2008Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F McconvilleAbstract:High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence Band Offset of wurtzite-InN/GaN(0001) heterojunctions to be $0.58\ifmmode\pm\else\textpm\fi{}0.08\text{ }\text{eV}$. This is discussed within the context of previous measurements and calculations and is in agreement with the value of $0.52\ifmmode\pm\else\textpm\fi{}0.14\text{ }\text{eV}$ determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction Band Offset of $2.22\ifmmode\pm\else\textpm\fi{}0.10\text{ }\text{eV}$.
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valence Band Offset of inn aln heterojunctions measured by x ray photoelectron spectroscopy
Applied Physics Letters, 2007Co-Authors: P. D. C. King, Tim D. Veal, C F Mcconville, P H Jefferson, Tao Wang, P J Parbrook, W J SchaffAbstract:X-ray photoelectron spectroscopy has been used to measure the valence Band Offset of the InN/BaTiO3 heterojunction. It is found that a type-I Band alignment forms at the interface. The valence Band Offset (VBO) and conduction Band Offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
Tim D. Veal - One of the best experts on this subject based on the ideXlab platform.
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valence Band Offset of the zno aln heterojunction determined by x ray photoemission spectroscopy
Applied Physics Letters, 2008Co-Authors: Tim D. Veal, P. D. C. King, S. A. Hatfield, L R Bailey, J C Moreno, C F Mcconville, Eric Frayssinet, Fabrice Semond, Bernard Martel, J. Zúñiga-pérezAbstract:The valence Band Offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence Band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction Band Offset of 3.29±0.20 eV, this indicates that a type-II (staggered) Band line up exists at the ZnO/AlN heterojunction. Using the III-nitride Band Offsets and the transitivity rule, the valence Band Offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.
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inn gan valence Band Offset high resolution x ray photoemission spectroscopy measurements
Physical Review B, 2008Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F McconvilleAbstract:High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence Band Offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction Band Offset of 2.22 +/- 0.10 eV.
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inn gan valence Band Offset high resolution x ray photoemission spectroscopy measurements
Physical Review B, 2008Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F McconvilleAbstract:High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence Band Offset of wurtzite-InN/GaN(0001) heterojunctions to be $0.58\ifmmode\pm\else\textpm\fi{}0.08\text{ }\text{eV}$. This is discussed within the context of previous measurements and calculations and is in agreement with the value of $0.52\ifmmode\pm\else\textpm\fi{}0.14\text{ }\text{eV}$ determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction Band Offset of $2.22\ifmmode\pm\else\textpm\fi{}0.10\text{ }\text{eV}$.
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valence Band Offset of inn aln heterojunctions measured by x ray photoelectron spectroscopy
Applied Physics Letters, 2007Co-Authors: P. D. C. King, Tim D. Veal, C F Mcconville, P H Jefferson, Tao Wang, P J Parbrook, W J SchaffAbstract:X-ray photoelectron spectroscopy has been used to measure the valence Band Offset of the InN/BaTiO3 heterojunction. It is found that a type-I Band alignment forms at the interface. The valence Band Offset (VBO) and conduction Band Offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
Xudong Fan - One of the best experts on this subject based on the ideXlab platform.
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x ray photoelectron spectroscopy measurement of n zno p nio heterostructure valence Band Offset
Applied Physics Letters, 2009Co-Authors: Rui Deng, B Yao, Z Z Zhang, D X Zhao, Jiguang Zhang, D Z Shen, Chongxin Shan, Yuqiang Zhao, Xudong FanAbstract:Valence-Band Offset (VBO) of n-ZnO/p-NiO heterojunction has been investigated by x-ray photoelectron spectroscopy. Core levels of Zn 2p and Ni 2p were used to align the VBO of n-ZnO/p-NiO heterojunction. It was found that n-ZnO/p-NiO heterojunction has a type-II Band alignment and its VBO is determined to be 2.60±0.20 eV, and conduction-Band Offset is deduced to be 2.93±0.20 eV. The experimental VBO value is in good agreement with the calculated value based on the electron affinity of ZnO and NiO.
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valence Band Offset of zno zn0 85mg0 15o heterojunction measured by x ray photoelectron spectroscopy
Applied Physics Letters, 2008Co-Authors: Z Z Zhang, B Yao, D X Zhao, Jiguang Zhang, D Z Shen, Chongxin Shan, Xudong FanAbstract:X-ray photoelectron spectroscopy was used to measure the valence Band Offset at the ZnO/Zn0.85Mg0.15O heterojunction grown by plasma-assisted molecular beam epitaxy. The valence Band Offset (ΔEV) is determined to be 0.13 eV. According to the experimental Band gap of 3.68 eV for the Zn0.85Mg0.15O, the conduction Band Offset (ΔEC) in this system was calculated to be 0.18 eV. The ΔEc:ΔEv in ZnO/Zn0.85Mg0.15O heterojunction was estimated to be 3:2.
Z G Wang - One of the best experts on this subject based on the ideXlab platform.
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valence Band Offset of zno batio3 heterojunction measured by x ray photoelectron spectroscopy
Applied Physics A, 2010Co-Authors: Caihong Jia, Yu Chen, Xilin Zhou, Anli Yang, Guosong Zheng, X L Liu, S Y Yang, Z G WangAbstract:X-ray photoelectron spectroscopy has been used to measure the valence Band Offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence Band Offset (VBO) is determined to be 0.48±0.09 eV, and the conduction Band Offset (CBO) is deduced to be about 0.75 eV using the Band gap of 3.1 eV for bulk BaTiO3. It indicates that a type-II Band alignment forms at the interface, in which the valence and conduction Bands of ZnO are concomitantly higher than those of BaTiO3. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.
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valence Band Offset of zno gaas heterojunction measured by x ray photoelectron spectroscopy
Applied Physics Letters, 2008Co-Authors: P F Zhang, X L Liu, S Y Yang, H B Fan, H Y Wei, Q S Zhu, Riqing Zhang, A L Yang, P Jin, Z G WangAbstract:The valence Band Offset (VBO) of the wurtzite ZnO∕4H-SiC heterojunction is directly determined to be 1.61±0.23eV by x-ray photoelectron spectroscopy. The conduction Band Offset is deduced to be 1.50±0.23eV from the known VBO value, which indicates a type-II Band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN.
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valence Band Offset of mgo 4h sic heterojunction measured by x ray photoelectron spectroscopy
Applied Physics Letters, 2008Co-Authors: P F Zhang, X L Liu, S Y Yang, Rq Q Zhang, H B Fan, H P Song, H Y Wei, Cm M Jiao, Q S Zhu, Z G WangAbstract:MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence Band Offset of MgO/InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence Band Offset is determined to be 1.59 +/- 0.23 eV. Given the experimental Band gap of 7.83 for the MgO, a type-I heterojunction with a conduction Band Offset of 5.54 +/- 0.23 eV is found. The accurate determination of the valence and conduction Band Offsets is important for use of MgO/InN electronic devices. (c) 2008 American Institute of Physics.
