The Experts below are selected from a list of 11688 Experts worldwide ranked by ideXlab platform
F.-m. Kuo - One of the best experts on this subject based on the ideXlab platform.
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photonic generation and wireless transmission of linearly nonlinearly continuously tunable chirped millimeter wave waveforms with high time Bandwidth Product at w band
IEEE Photonics Journal, 2012Co-Authors: Jw Shi, F.-m. Kuo, Nanwei Chen, Sze Yun Set, Cb Huang, John E. BowersAbstract:We demonstrate a novel scheme for photonic generation of chirped millimeter-wave (MMW) pulse with ultrahigh time-Bandwidth Product (TBP). By using a fast wavelength-sweeping laser with a narrow instantaneous linewidth, wideband/high-power photonic transmitter-mixers, and heterodyne-beating technique, continuously tunable chirped MMW waveforms at the W-band are generated and detected through wireless transmission. Compared with the reported optical grating-based wavelength-to-time mapping techniques for chirped pulse generation, our approach eliminates the problem in limited frequency resolution of grating, which seriously limits the continuity, tunability, and TBP of the generated waveform. Furthermore, by changing the alternating current (AC) waveform of the driving signal to the sweeping laser, linearly or nonlinearly continuously chirped MMW pulse can be easily generated and switched. Using our scheme, linearly and nonlinearly chirped pulses with record-high TBPs (89-103 GHz/ 50 μs/7 × 105) are experimentally achieved.
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linear cascade near ballistic unitraveling carrier photodiodes with an extremely high saturation current Bandwidth Product
Journal of Lightwave Technology, 2011Co-Authors: F.-m. Kuo, M.-z. ChouAbstract:Saturation current-Bandwidth Product (SCBP), the key of figure of merit in high-speed and high-power photodiodes (PDs), is mainly limited by the tradeoff between carrier drift time in depletion layer and RC-limited Bandwidth of conventional PDs. Here, we present a revolutionary photodiode structure: linear-cascade photodiodes (LCPDs), designed to further improve the SCBP performance. Our demonstrated LCPD structure can greatly increase the SCBP without using a complex distributed structure of the traveling-wave PD or reducing the load resistance (output RF power). Two flip-chip bonding packaged near-ballistic unitraveling-carrier photodiode (NBUTC-PD) units are employed in our LCPD structure. It exhibits a great improvement in SCBP compared to that of the control device with a single NBUTC-PD. A two-port equivalent-circuit model is established for the LCPDs and the modeling results clearly indicate that the increase in SCBP can be attributed to the significant reduction in its total capacitance due to the serial connection. Furthermore, we find that only when each PD unit in the LCPD structure has the same amount of injected optical power and modulated frequency of optical signal, the whole structure exhibits a carrier transit time as short as that of a single PD. Under the proper optical excitation, we can achieve a record high SCBP (7500 mA·GHz and 100 GHz) for two-element LCPDs under a 50 Ω load.
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extremely high saturation current Bandwidth Product performance of a near ballistic uni traveling carrier photodiode with a flip chip bonding structure
IEEE Journal of Quantum Electronics, 2010Co-Authors: Jin-wei Shi, F.-m. Kuo, Chunjong Chang, Chengyi Liu, Chengyu Chen, Jeninn ChyiAbstract:In this study, we demonstrate near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with an optimized flip-chip bonding structure, wide 3-dB optical-to-electrical (O-E) Bandwidth (> 110 GHz), and extremely high saturation current-Bandwidth Product performance (37 mA, > 110 GHz, > 4070 mAmiddot GHz). NBUTC-PDs with different active areas (28-144 mum2) are fabricated and flip-chip bonded with coplanar waveguides onto an AlN-based pedestal. The overshoot drift velocity of the electrons in the collector layer of the NBUTC-PD means that both the thicknesses of the collector layer and active areas of our device can be increased to reduce the density of the output photocurrent, compared to that of the traditional UTC-PD. This improves the high power performance without seriously sacrificing the speed performance. According to the measured O-E frequency responses, devices with even a large active area (144 mum2 ) can still have a flat O-E frequency response, from near dc to 110 GHz. A three-port equivalent circuit model for accurately extracting the 3-dB Bandwidth of the devices is established. The extracted 3-dB O-E Bandwidth of a device with a small active area (28 mum2) can be as high as 280 GHz under a load of 25 Omega . In addition, the saturation current measurement results indicate that after inserting a center bonding pad on the pedestal (located below the p-metal of the NBUTC-PD for good heat sinking), the saturation current performance of the device becomes much higher than that of the control device (without the center bonding pad), especially for the device with a small active area (28 mum2 ). The measurement and modeling results indicate that a device with a 144 mum2 active area and optimized flip-chip bonding pedestal can achieve an extremely high saturation current-Bandwidth Product (6660 mA-GHz, 37 mA, 180 GHz).
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dynamic analysis of a si sige based impact ionization avalanche transit time photodiode with an ultrahigh gain Bandwidth Product
IEEE Electron Device Letters, 2009Co-Authors: Jw Shi, F.-m. Kuo, F C HongAbstract:We investigate the dynamic performance of a Si/SiGe-based impact ionization avalanche transit time photodiode (PD) fabricated on a standard Si substrate that operates at the 830-nm wavelength. The Bandwidth-enhancement effect under negative-photoconductance (NPC) operation can greatly relax the internal transit time as well as the tradeoff between the gain and Bandwidth performance that characterizes the traditional avalanche PD. Our modeling and measurement results show that the extracted internal resonant frequency increases significantly with the reverse leakage current. By choosing the proper bias voltage in the NPC region, we can simultaneously achieve a wide 3-dB Bandwidth (30 GHz), ultrahigh gain-Bandwidth Product (690 GHz) with a 53.2% external efficiency at unit gain, and clear eye opening at 10 Gb/s.
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a si sige based impact ionization avalanche transit time photodiode with ultra high gain Bandwidth Product 690ghz for 10 gb s fiber communication
Optical Fiber Communication Conference, 2009Co-Authors: Jw Shi, F.-m. Kuo, F C Hong, D J F Fulgoni, L J Nash, M PalmerAbstract:We demonstrate Si/SiGe Impact-Ionization-Avalanche-Transit-Time Photodiodes at 830nm wavelength. It achieves an ultra-high gain-Bandwidth Product (690GHz, 30GHz Bandwidth) with high external efficiency (53.2%) and 10Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.
J C Campbell - One of the best experts on this subject based on the ideXlab platform.
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frequency response and Bandwidth enhancement in ge si avalanche photodiodes with over 840ghz gain Bandwidth Product
Optics Express, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-Bandwidth-Product of 845GHz at a wavelength of 1310nm. The corresponding gain value is 65 and the electrical Bandwidth is 13GHz at an optical input power of −30dBm. The unconventional high gain-Bandwidth-Product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-Bandwidth-Product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
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frequency response and Bandwidth enhancement in ge si avalanche photodiodes with over 840 ghz gain Bandwidth Product
Optics Express, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-Bandwidth-Product of 845 GHz at a wavelength of 1310 nm. The corresponding gain value is 65 and the electrical Bandwidth is 13 GHz at an optical input power of -30 dBm. The unconventional high gain-Bandwidth-Product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-Bandwidth-Product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
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origin of the gain Bandwidth Product enhancement in separate absorption charge multiplication ge si avalanche photodiodes
Optical Fiber Communication Conference, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:A separate-absorption-charge-multiplication Ge/Si avalanche photodiode with very high gain-Bandwidth-Product over 800GHz is reported. The origin of this dramatically high value is explained using well consentient measurement and simulation results.
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waveguide avalanche photodiode operating at 1 55 μm with a gain Bandwidth Product of 320 ghz
IEEE Photonics Technology Letters, 2001Co-Authors: G S Kinsey, J C Campbell, Andrew DentaiAbstract:An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record gain-Bandwidth Product of over 320 GHz has been demonstrated. A Bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 /spl mu/m.
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high speed resonant cavity separate absorption and multiplication avalanche photodiodes with 130 ghz gain Bandwidth Product
Applied Physics Letters, 1997Co-Authors: H. Nie, K.a. Anselm, Ben G. Streetman, S S Murtaza, J C CampbellAbstract:Previously it has been shown that resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiodes (APDs) exhibit high peak external quantum efficiency (∼75%), low dark current, low bias voltage (<15 V), and low multiplication noise (0.2
Jw Shi - One of the best experts on this subject based on the ideXlab platform.
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photonic generation and wireless transmission of linearly nonlinearly continuously tunable chirped millimeter wave waveforms with high time Bandwidth Product at w band
IEEE Photonics Journal, 2012Co-Authors: Jw Shi, F.-m. Kuo, Nanwei Chen, Sze Yun Set, Cb Huang, John E. BowersAbstract:We demonstrate a novel scheme for photonic generation of chirped millimeter-wave (MMW) pulse with ultrahigh time-Bandwidth Product (TBP). By using a fast wavelength-sweeping laser with a narrow instantaneous linewidth, wideband/high-power photonic transmitter-mixers, and heterodyne-beating technique, continuously tunable chirped MMW waveforms at the W-band are generated and detected through wireless transmission. Compared with the reported optical grating-based wavelength-to-time mapping techniques for chirped pulse generation, our approach eliminates the problem in limited frequency resolution of grating, which seriously limits the continuity, tunability, and TBP of the generated waveform. Furthermore, by changing the alternating current (AC) waveform of the driving signal to the sweeping laser, linearly or nonlinearly continuously chirped MMW pulse can be easily generated and switched. Using our scheme, linearly and nonlinearly chirped pulses with record-high TBPs (89-103 GHz/ 50 μs/7 × 105) are experimentally achieved.
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dynamic analysis of a si sige based impact ionization avalanche transit time photodiode with an ultrahigh gain Bandwidth Product
IEEE Electron Device Letters, 2009Co-Authors: Jw Shi, F.-m. Kuo, F C HongAbstract:We investigate the dynamic performance of a Si/SiGe-based impact ionization avalanche transit time photodiode (PD) fabricated on a standard Si substrate that operates at the 830-nm wavelength. The Bandwidth-enhancement effect under negative-photoconductance (NPC) operation can greatly relax the internal transit time as well as the tradeoff between the gain and Bandwidth performance that characterizes the traditional avalanche PD. Our modeling and measurement results show that the extracted internal resonant frequency increases significantly with the reverse leakage current. By choosing the proper bias voltage in the NPC region, we can simultaneously achieve a wide 3-dB Bandwidth (30 GHz), ultrahigh gain-Bandwidth Product (690 GHz) with a 53.2% external efficiency at unit gain, and clear eye opening at 10 Gb/s.
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a si sige based impact ionization avalanche transit time photodiode with ultra high gain Bandwidth Product 690ghz for 10 gb s fiber communication
Optical Fiber Communication Conference, 2009Co-Authors: Jw Shi, F.-m. Kuo, F C Hong, D J F Fulgoni, L J Nash, M PalmerAbstract:We demonstrate Si/SiGe Impact-Ionization-Avalanche-Transit-Time Photodiodes at 830nm wavelength. It achieves an ultra-high gain-Bandwidth Product (690GHz, 30GHz Bandwidth) with high external efficiency (53.2%) and 10Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.
F C Hong - One of the best experts on this subject based on the ideXlab platform.
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dynamic analysis of a si sige based impact ionization avalanche transit time photodiode with an ultrahigh gain Bandwidth Product
IEEE Electron Device Letters, 2009Co-Authors: Jw Shi, F.-m. Kuo, F C HongAbstract:We investigate the dynamic performance of a Si/SiGe-based impact ionization avalanche transit time photodiode (PD) fabricated on a standard Si substrate that operates at the 830-nm wavelength. The Bandwidth-enhancement effect under negative-photoconductance (NPC) operation can greatly relax the internal transit time as well as the tradeoff between the gain and Bandwidth performance that characterizes the traditional avalanche PD. Our modeling and measurement results show that the extracted internal resonant frequency increases significantly with the reverse leakage current. By choosing the proper bias voltage in the NPC region, we can simultaneously achieve a wide 3-dB Bandwidth (30 GHz), ultrahigh gain-Bandwidth Product (690 GHz) with a 53.2% external efficiency at unit gain, and clear eye opening at 10 Gb/s.
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a si sige based impact ionization avalanche transit time photodiode with ultra high gain Bandwidth Product 690ghz for 10 gb s fiber communication
Optical Fiber Communication Conference, 2009Co-Authors: Jw Shi, F.-m. Kuo, F C Hong, D J F Fulgoni, L J Nash, M PalmerAbstract:We demonstrate Si/SiGe Impact-Ionization-Avalanche-Transit-Time Photodiodes at 830nm wavelength. It achieves an ultra-high gain-Bandwidth Product (690GHz, 30GHz Bandwidth) with high external efficiency (53.2%) and 10Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.
John E. Bowers - One of the best experts on this subject based on the ideXlab platform.
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photonic generation and wireless transmission of linearly nonlinearly continuously tunable chirped millimeter wave waveforms with high time Bandwidth Product at w band
IEEE Photonics Journal, 2012Co-Authors: Jw Shi, F.-m. Kuo, Nanwei Chen, Sze Yun Set, Cb Huang, John E. BowersAbstract:We demonstrate a novel scheme for photonic generation of chirped millimeter-wave (MMW) pulse with ultrahigh time-Bandwidth Product (TBP). By using a fast wavelength-sweeping laser with a narrow instantaneous linewidth, wideband/high-power photonic transmitter-mixers, and heterodyne-beating technique, continuously tunable chirped MMW waveforms at the W-band are generated and detected through wireless transmission. Compared with the reported optical grating-based wavelength-to-time mapping techniques for chirped pulse generation, our approach eliminates the problem in limited frequency resolution of grating, which seriously limits the continuity, tunability, and TBP of the generated waveform. Furthermore, by changing the alternating current (AC) waveform of the driving signal to the sweeping laser, linearly or nonlinearly continuously chirped MMW pulse can be easily generated and switched. Using our scheme, linearly and nonlinearly chirped pulses with record-high TBPs (89-103 GHz/ 50 μs/7 × 105) are experimentally achieved.
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frequency response and Bandwidth enhancement in ge si avalanche photodiodes with over 840ghz gain Bandwidth Product
Optics Express, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-Bandwidth-Product of 845GHz at a wavelength of 1310nm. The corresponding gain value is 65 and the electrical Bandwidth is 13GHz at an optical input power of −30dBm. The unconventional high gain-Bandwidth-Product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-Bandwidth-Product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
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frequency response and Bandwidth enhancement in ge si avalanche photodiodes with over 840 ghz gain Bandwidth Product
Optics Express, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-Bandwidth-Product of 845 GHz at a wavelength of 1310 nm. The corresponding gain value is 65 and the electrical Bandwidth is 13 GHz at an optical input power of -30 dBm. The unconventional high gain-Bandwidth-Product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-Bandwidth-Product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
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origin of the gain Bandwidth Product enhancement in separate absorption charge multiplication ge si avalanche photodiodes
Optical Fiber Communication Conference, 2009Co-Authors: Wissem Sfar Zaoui, John E. Bowers, Huiwen Chen, Yimin Kang, Mike Morse, Mario J Paniccia, A Pauchard, J C CampbellAbstract:A separate-absorption-charge-multiplication Ge/Si avalanche photodiode with very high gain-Bandwidth-Product over 800GHz is reported. The origin of this dramatically high value is explained using well consentient measurement and simulation results.
