The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Manijeh Razeghi - One of the best experts on this subject based on the ideXlab platform.
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demonstration of shortwavelength infrared Photodiodes based on type ii inas gasb alsb superlattices
Applied Physics Letters, 2012Co-Authors: A M Hoang, G Chen, Abbas Haddadi, Abdollahi S Pour, Manijeh RazeghiAbstract:We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice Photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb Photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the Photodiode exhibited a dark current density of 5.6 × 10−8 A/cm2 and a front-side-illuminated quantum efficiency of 40.3%, providing an associated shot noise detectivity of 1.0 × 1013 Jones. The uncooled Photodiode showed a dark current density of 2.2 × 10−3 A/cm2 and a quantum efficiency of 41.5%, resulting in a detectivity of 1.7 × 1010 Jones.
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high operating temperature midwave infrared Photodiodes and focal plane arrays based on type ii inas gasb superlattices
Applied Physics Letters, 2011Co-Authors: Abdollahi S Pour, G Chen, Abbas Haddadi, Edward Kwei Wei Huang, Binhminh Nguyen, Manijeh RazeghiAbstract:The dominant dark current mechanisms are identified and suppressed to improve the performance of midwave infrared InAs/GaSb type-II superlattice Photodiodes at high temperatures. The optimized heterojunction Photodiode exhibits a quantum efficiency of 50% for 2 μm thick active region without any bias dependence. At 150 K, R0A of 5100 Ω cm2 and specific detectivity of 1.05×1012 cm Hz0.5/W are demonstrated for a 50% cutoff wavelength of 4.2μm. Assuming 300 K background temperature and 2π field of view, the performance of the detector is background limited up to 180 K, which is improved by 25 °C compared to the homojunction Photodiode. Infrared imaging using f/2.3 optics and an integration time of 10.02 ms demonstrates a noise equivalent temperature difference of 11 mK at operating temperatures below 120 K.
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narrow gap semiconductor Photodiodes
2000Co-Authors: A Rogalski, Manijeh RazeghiAbstract:At present efforts in IR detector research are directed towards improving the performance of single element devices and large electronically scanned arrays, and to obtain higher operating temperature of detectors. Another important aim is to make IR detectors cheaper and more convenient to use. Investigations of the performance of narrow gap semiconductor Photodiodes are presented. Recent progress in different IR Photodiode technologies is discussed: HgCdTe Photodiodes, InSb Photodiodes, alternative to HgCdTe III-V and II-VI ternary alloy Photodiodes, and monolithic lead chalcogenide Photodiodes. Investigations of the performance of Photodiodes operated at short wavelength IR, 1-3 $mUm; medium wavelength IR, 3-5 micrometers ; and long wavelength IR, 8- 14 micrometers ; are presented. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. HgCdTe detectors with background limited performance operate with thermoelectric coolers in the medium wavelength range, instead the long wavelength detectors operate at approximately equals 100 K. HgCdTe is characterized by high absorption coefficient and quantum efficiency and relatively low thermal generation rate compared to other detectors.
Andreas Beling - One of the best experts on this subject based on the ideXlab platform.
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InP-based waveguide Photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation.
Optics express, 2013Co-Authors: Andreas Beling, A. Cross, Molly Piels, Jon D. Peters, Q. Zhou, John E. Bowers, Joe C. CampbellAbstract:High-linearity modified uni-traveling carrier Photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA·GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.
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characterizing and modeling nonlinear intermodulation distortions in modified uni traveling carrier Photodiodes
IEEE Journal of Quantum Electronics, 2011Co-Authors: Yang Fu, Zhi Li, Andreas BelingAbstract:We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) Photodiodes. At low frequencies (<;3 GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC Photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the Photodiode simulated using this model agrees well with measurements.
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minimizing Photodiode nonlinearities by compensating voltage dependent responsivity effects
Journal of Lightwave Technology, 2010Co-Authors: A S Hastings, Andreas Beling, D A Tulchinsky, K J Williams, Huapu Pan, J C CampbellAbstract:Two voltage-dependant responsivity effects, impact ionization and Franz-Keldysh oscillations, are shown to have opposing effects at certain wavelengths in p-i-n Photodiodes. It is shown that these two effects can compensate each other and minimize Photodiode nonlinearities when optimized with respect to wavelength and bias voltage.
Abdollahi S Pour - One of the best experts on this subject based on the ideXlab platform.
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demonstration of shortwavelength infrared Photodiodes based on type ii inas gasb alsb superlattices
Applied Physics Letters, 2012Co-Authors: A M Hoang, G Chen, Abbas Haddadi, Abdollahi S Pour, Manijeh RazeghiAbstract:We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice Photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb Photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the Photodiode exhibited a dark current density of 5.6 × 10−8 A/cm2 and a front-side-illuminated quantum efficiency of 40.3%, providing an associated shot noise detectivity of 1.0 × 1013 Jones. The uncooled Photodiode showed a dark current density of 2.2 × 10−3 A/cm2 and a quantum efficiency of 41.5%, resulting in a detectivity of 1.7 × 1010 Jones.
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high operating temperature midwave infrared Photodiodes and focal plane arrays based on type ii inas gasb superlattices
Applied Physics Letters, 2011Co-Authors: Abdollahi S Pour, G Chen, Abbas Haddadi, Edward Kwei Wei Huang, Binhminh Nguyen, Manijeh RazeghiAbstract:The dominant dark current mechanisms are identified and suppressed to improve the performance of midwave infrared InAs/GaSb type-II superlattice Photodiodes at high temperatures. The optimized heterojunction Photodiode exhibits a quantum efficiency of 50% for 2 μm thick active region without any bias dependence. At 150 K, R0A of 5100 Ω cm2 and specific detectivity of 1.05×1012 cm Hz0.5/W are demonstrated for a 50% cutoff wavelength of 4.2μm. Assuming 300 K background temperature and 2π field of view, the performance of the detector is background limited up to 180 K, which is improved by 25 °C compared to the homojunction Photodiode. Infrared imaging using f/2.3 optics and an integration time of 10.02 ms demonstrates a noise equivalent temperature difference of 11 mK at operating temperatures below 120 K.
Hao Chen - One of the best experts on this subject based on the ideXlab platform.
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ingaas inp Photodiodes with high responsivity and high saturation power
IEEE Photonics Technology Letters, 2007Co-Authors: Xin Wang, Ning Duan, Hao ChenAbstract:InGaAs-InP modified charge compensated uni- traveling carrier Photodiodes with both absorbing and nonabsorbing depleted region are demonstrated. The fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W). A 40-mum-diameter Photodiode achieved 14-GHz bandwidth and 25-dBm RF output power and a 20-mum-diameter Photodiode exhibited 30-GHz bandwidth and 15.5-dBm RF output power. The saturation current-bandwidth products are 1820 mA ldr GHz and 1560 mA GHz for the 40-mum-diameter and 40-mum-diameter devices, respectively.
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high power Photodiode wafer bonded to si using au with improved responsivity and output power
IEEE Photonics Technology Letters, 2006Co-Authors: Hao Chen, Ning Duan, S Demiguel, Mingguo Liu, R Sidhu, A L Holmes, J C CampbellAbstract:High power Photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter Photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of the Au-bonded Photodiode were improved compared to the Photodiode with the same structure on InP substrate
J C Campbell - One of the best experts on this subject based on the ideXlab platform.
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minimizing Photodiode nonlinearities by compensating voltage dependent responsivity effects
Journal of Lightwave Technology, 2010Co-Authors: A S Hastings, Andreas Beling, D A Tulchinsky, K J Williams, Huapu Pan, J C CampbellAbstract:Two voltage-dependant responsivity effects, impact ionization and Franz-Keldysh oscillations, are shown to have opposing effects at certain wavelengths in p-i-n Photodiodes. It is shown that these two effects can compensate each other and minimize Photodiode nonlinearities when optimized with respect to wavelength and bias voltage.
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high power Photodiode wafer bonded to si using au with improved responsivity and output power
IEEE Photonics Technology Letters, 2006Co-Authors: Hao Chen, Ning Duan, S Demiguel, Mingguo Liu, R Sidhu, A L Holmes, J C CampbellAbstract:High power Photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter Photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of the Au-bonded Photodiode were improved compared to the Photodiode with the same structure on InP substrate
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noise characteristics of thin multiplication region gaas avalanche Photodiodes
Applied Physics Letters, 1996Co-Authors: K.a. Anselm, Ben G. Streetman, J C CampbellAbstract:It is well known that the gain‐bandwidth product of an avalanche Photodiode can be increased by utilizing a thin multiplication region. Previously, measurements of the excess noise factor of InP/InGaAsP/InGaAs avalanche Photodiodes with separate absorption and multiplication regions indicated that this approach could also be employed to reduce the multiplication noise. This letter presents a systematic study of the noise characteristics of GaAs homojunction avalanche Photodiodes with different multiplication layer thicknesses. It is demonstrated that there is a definite ‘‘size effect’’ for multiplication regions less than approximately 0.5 μm. A good fit to the experimental data has been achieved using a discrete, nonlocalized model for the impact ionization process.
