The Experts below are selected from a list of 11214 Experts worldwide ranked by ideXlab platform

Chongwen Zou - One of the best experts on this subject based on the ideXlab platform.

  • infrared response and Optoelectronic memory Device fabrication Based on epitaxial vo2 film
    ACS Applied Materials & Interfaces, 2016
    Co-Authors: Lele Fan, Yuliang Chen, Qianghu Liu, Shi Chen, Lei Zhu, Qiangqiang Meng, Baolin Wang, Qinfang Zhang, Hui Ren, Chongwen Zou
    Abstract:

    In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film Device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an Optoelectronic memory Device was achieved. This memory Device was operated under the “electrical writing–optical reading” mode, which shows promising applications in VO2-Based Optoelectronic Device in the future.

Avi Shalav - One of the best experts on this subject based on the ideXlab platform.

  • enhancing the near infrared spectral response of silicon Optoelectronic Devices via up conversion
    IEEE Transactions on Electron Devices, 2007
    Co-Authors: Bryce S Richards, Avi Shalav
    Abstract:

    A silicon-Based Optoelectronic Device that exhibits an enhanced response to subbandgap light is described. The Device structure consists of a bifacial silicon solar cell with an up- converting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY0.8F4 : Er0.2 3+) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized Device is demonstrated to respond effectively to wavelengths (lambda) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 times 10-2 cm2/W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the Device is 16.7% at 2.4 W/cm2 of 1523-nm excitation (LQE = 7.0 times 10-2 cm2/W), while further potential Device improvements indicate that an EQE of 14.0% (5.8 times 10-2 cm2/W) could be realistically achieved.

Lele Fan - One of the best experts on this subject based on the ideXlab platform.

  • infrared response and Optoelectronic memory Device fabrication Based on epitaxial vo2 film
    ACS Applied Materials & Interfaces, 2016
    Co-Authors: Lele Fan, Yuliang Chen, Qianghu Liu, Shi Chen, Lei Zhu, Qiangqiang Meng, Baolin Wang, Qinfang Zhang, Hui Ren, Chongwen Zou
    Abstract:

    In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film Device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an Optoelectronic memory Device was achieved. This memory Device was operated under the “electrical writing–optical reading” mode, which shows promising applications in VO2-Based Optoelectronic Device in the future.

Qiangqiang Meng - One of the best experts on this subject based on the ideXlab platform.

  • infrared response and Optoelectronic memory Device fabrication Based on epitaxial vo2 film
    ACS Applied Materials & Interfaces, 2016
    Co-Authors: Lele Fan, Yuliang Chen, Qianghu Liu, Shi Chen, Lei Zhu, Qiangqiang Meng, Baolin Wang, Qinfang Zhang, Hui Ren, Chongwen Zou
    Abstract:

    In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film Device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an Optoelectronic memory Device was achieved. This memory Device was operated under the “electrical writing–optical reading” mode, which shows promising applications in VO2-Based Optoelectronic Device in the future.

Hui Ren - One of the best experts on this subject based on the ideXlab platform.

  • infrared response and Optoelectronic memory Device fabrication Based on epitaxial vo2 film
    ACS Applied Materials & Interfaces, 2016
    Co-Authors: Lele Fan, Yuliang Chen, Qianghu Liu, Shi Chen, Lei Zhu, Qiangqiang Meng, Baolin Wang, Qinfang Zhang, Hui Ren, Chongwen Zou
    Abstract:

    In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film Device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an Optoelectronic memory Device was achieved. This memory Device was operated under the “electrical writing–optical reading” mode, which shows promising applications in VO2-Based Optoelectronic Device in the future.