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Beam Curvature
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Peter Y Wong – One of the best experts on this subject based on the ideXlab platform.

Determining the Hightemperature Properties of Thin Films Using Bilayered Cantilevers
MRS Proceedings, 2011CoAuthors: Haruna Tada, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:Hightemperature applications of microelectromechanical systems (MEMS), especially in new temperature sensor designs, require an accurate knowledge of the temperaturedependent thermophysical properties of the materials. Although the measurement of the mechanical properties of materials at room temperature has been widely conducted, the same techniques often cannot be used for hightemperature property measurements. In this study, a new technique was developed to find the thermal expansion coefficient of thin films at high temperatures. Bilayered cantilever Beams undergo thermally induced deflection at high temperatures, which can be measured and correlated to material properties. An imaging system was developed for the experimental measurement of the Beam Curvature for temperatures up to 1000°C. To find the hightemperature property of thin films, a bilayered Beam, consisting of polycrystalline silicon and silicon dioxide, was designed such that the change in the property of SiO 2 had little effect on the Curvature of the Beam. Furthermore, numerical analysis showed that the Young’s modulus of Si also had negligible effect on the Curvature. Therefore, the analytical model for Beam Curvature was simplified to be only a function of the thermal expansion coefficient of Si layer. Using this model, the thermal expansion coefficient of polycrystalline Si film was determined for temperature range between room temperature and 1000°C. The method can be easily modified to find the Young’s modulus of Si, as well as properties of SiO 2 .

thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures
Journal of Applied Physics, 2000CoAuthors: Haruna Tada, Amy E Kumpel, Richard E Lathrop, John B Slanina, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:The rapid growth of microelectromechanical systems (MEMS) industry has introduced a need for the characterization of thin film properties at all temperatures encountered during fabrication and application of the devices. A technique was developed to use MEMS test structures for the determination of the difference in thermal expansion coefficients (α) between polySi and SiO2 thin films at high temperatures. The test structure consists of multilayered cantilever Beams, fabricated using standard photolithography techniques. An apparatus was developed to measure the thermally induced Curvature of Beams at high temperatures using imaging techniques. The Curvatures measured were compared to the numerical model for multilayered Beam Curvature. The model accounts for the variation in thermomechanical properties with temperature. The Beams were designed so that the values of Young’s moduli had negligible effect on Beam Curvature; therefore, values from literature were used for ESi and ESiO2 without introducing si…

Novel imaging system for measuring microscale Curvatures at high temperatures
Review of Scientific Instruments, 2000CoAuthors: Haruna Tada, Amy E Kumpel, Richard E Lathrop, John B Slanina, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:An innovative system was designed to optically measure the Curvature of microelectromechanical system at high temperatures. The system takes advantage of the limited numerical aperture of the imaging system to detect the Curvature of cantilever Beams. Images of the Beam are used to determine Beam Curvature at high temperatures of up to 850 °C by analyzing the apparent change in Beam length as seen by the camera during an experimental trial. The system is designed to operate at very high temperatures, which is difficult in conventional microscale Curvature measurement techniques such as scanning electron microscopy or stylus profilometry due to excess heating of peripheral equipment. The system can measure Curvatures as small as 300 m−1, which corresponds to tip deflections of 1.5 μm for a 100 μm Beam. The resolution of the system is limited by the image resolution of the chargecoupled device camera, and increases at large Curvatures. The maximum Curvature that can be measured by the system is limited by …
Haruna Tada – One of the best experts on this subject based on the ideXlab platform.

Determining the Hightemperature Properties of Thin Films Using Bilayered Cantilevers
MRS Proceedings, 2011CoAuthors: Haruna Tada, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:Hightemperature applications of microelectromechanical systems (MEMS), especially in new temperature sensor designs, require an accurate knowledge of the temperaturedependent thermophysical properties of the materials. Although the measurement of the mechanical properties of materials at room temperature has been widely conducted, the same techniques often cannot be used for hightemperature property measurements. In this study, a new technique was developed to find the thermal expansion coefficient of thin films at high temperatures. Bilayered cantilever Beams undergo thermally induced deflection at high temperatures, which can be measured and correlated to material properties. An imaging system was developed for the experimental measurement of the Beam Curvature for temperatures up to 1000°C. To find the hightemperature property of thin films, a bilayered Beam, consisting of polycrystalline silicon and silicon dioxide, was designed such that the change in the property of SiO 2 had little effect on the Curvature of the Beam. Furthermore, numerical analysis showed that the Young’s modulus of Si also had negligible effect on the Curvature. Therefore, the analytical model for Beam Curvature was simplified to be only a function of the thermal expansion coefficient of Si layer. Using this model, the thermal expansion coefficient of polycrystalline Si film was determined for temperature range between room temperature and 1000°C. The method can be easily modified to find the Young’s modulus of Si, as well as properties of SiO 2 .

thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures
Journal of Applied Physics, 2000CoAuthors: Haruna Tada, Amy E Kumpel, Richard E Lathrop, John B Slanina, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:The rapid growth of microelectromechanical systems (MEMS) industry has introduced a need for the characterization of thin film properties at all temperatures encountered during fabrication and application of the devices. A technique was developed to use MEMS test structures for the determination of the difference in thermal expansion coefficients (α) between polySi and SiO2 thin films at high temperatures. The test structure consists of multilayered cantilever Beams, fabricated using standard photolithography techniques. An apparatus was developed to measure the thermally induced Curvature of Beams at high temperatures using imaging techniques. The Curvatures measured were compared to the numerical model for multilayered Beam Curvature. The model accounts for the variation in thermomechanical properties with temperature. The Beams were designed so that the values of Young’s moduli had negligible effect on Beam Curvature; therefore, values from literature were used for ESi and ESiO2 without introducing si…

Novel imaging system for measuring microscale Curvatures at high temperatures
Review of Scientific Instruments, 2000CoAuthors: Haruna Tada, Amy E Kumpel, Richard E Lathrop, John B Slanina, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:An innovative system was designed to optically measure the Curvature of microelectromechanical system at high temperatures. The system takes advantage of the limited numerical aperture of the imaging system to detect the Curvature of cantilever Beams. Images of the Beam are used to determine Beam Curvature at high temperatures of up to 850 °C by analyzing the apparent change in Beam length as seen by the camera during an experimental trial. The system is designed to operate at very high temperatures, which is difficult in conventional microscale Curvature measurement techniques such as scanning electron microscopy or stylus profilometry due to excess heating of peripheral equipment. The system can measure Curvatures as small as 300 m−1, which corresponds to tip deflections of 1.5 μm for a 100 μm Beam. The resolution of the system is limited by the image resolution of the chargecoupled device camera, and increases at large Curvatures. The maximum Curvature that can be measured by the system is limited by …
Ioannis N Miaoulis – One of the best experts on this subject based on the ideXlab platform.

Determining the Hightemperature Properties of Thin Films Using Bilayered Cantilevers
MRS Proceedings, 2011CoAuthors: Haruna Tada, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:Hightemperature applications of microelectromechanical systems (MEMS), especially in new temperature sensor designs, require an accurate knowledge of the temperaturedependent thermophysical properties of the materials. Although the measurement of the mechanical properties of materials at room temperature has been widely conducted, the same techniques often cannot be used for hightemperature property measurements. In this study, a new technique was developed to find the thermal expansion coefficient of thin films at high temperatures. Bilayered cantilever Beams undergo thermally induced deflection at high temperatures, which can be measured and correlated to material properties. An imaging system was developed for the experimental measurement of the Beam Curvature for temperatures up to 1000°C. To find the hightemperature property of thin films, a bilayered Beam, consisting of polycrystalline silicon and silicon dioxide, was designed such that the change in the property of SiO 2 had little effect on the Curvature of the Beam. Furthermore, numerical analysis showed that the Young’s modulus of Si also had negligible effect on the Curvature. Therefore, the analytical model for Beam Curvature was simplified to be only a function of the thermal expansion coefficient of Si layer. Using this model, the thermal expansion coefficient of polycrystalline Si film was determined for temperature range between room temperature and 1000°C. The method can be easily modified to find the Young’s modulus of Si, as well as properties of SiO 2 .

thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures
Journal of Applied Physics, 2000CoAuthors: Haruna Tada, Amy E Kumpel, Richard E Lathrop, John B Slanina, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:The rapid growth of microelectromechanical systems (MEMS) industry has introduced a need for the characterization of thin film properties at all temperatures encountered during fabrication and application of the devices. A technique was developed to use MEMS test structures for the determination of the difference in thermal expansion coefficients (α) between polySi and SiO2 thin films at high temperatures. The test structure consists of multilayered cantilever Beams, fabricated using standard photolithography techniques. An apparatus was developed to measure the thermally induced Curvature of Beams at high temperatures using imaging techniques. The Curvatures measured were compared to the numerical model for multilayered Beam Curvature. The model accounts for the variation in thermomechanical properties with temperature. The Beams were designed so that the values of Young’s moduli had negligible effect on Beam Curvature; therefore, values from literature were used for ESi and ESiO2 without introducing si…

Novel imaging system for measuring microscale Curvatures at high temperatures
Review of Scientific Instruments, 2000CoAuthors: Haruna Tada, Amy E Kumpel, Richard E Lathrop, John B Slanina, P Nieva, Paul M Zavracky, Ioannis N Miaoulis, Peter Y WongAbstract:An innovative system was designed to optically measure the Curvature of microelectromechanical system at high temperatures. The system takes advantage of the limited numerical aperture of the imaging system to detect the Curvature of cantilever Beams. Images of the Beam are used to determine Beam Curvature at high temperatures of up to 850 °C by analyzing the apparent change in Beam length as seen by the camera during an experimental trial. The system is designed to operate at very high temperatures, which is difficult in conventional microscale Curvature measurement techniques such as scanning electron microscopy or stylus profilometry due to excess heating of peripheral equipment. The system can measure Curvatures as small as 300 m−1, which corresponds to tip deflections of 1.5 μm for a 100 μm Beam. The resolution of the system is limited by the image resolution of the chargecoupled device camera, and increases at large Curvatures. The maximum Curvature that can be measured by the system is limited by …