The Experts below are selected from a list of 65541 Experts worldwide ranked by ideXlab platform
Tsuyoshi Munakata - One of the best experts on this subject based on the ideXlab platform.
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Damage Analysis of Semiconductor Chip during Wire Bonding Process
Computational Mechanics ’95, 1995Co-Authors: Toru Ikeda, Noriyuki Miyazaki, Kiyoteru Kudo, Tsuyoshi MunakataAbstract:Wire Bonding, a Process for connection between a semiconductor chip and a lead frame by thin metal wire, is one of the important Processes of electronic packaging. Figure 1 shows a silicon chip connected with a lead frame by gold wire. The gold wire Bonding Process is performed as shown in Figure 2. (1) A tip of gold wire put out from a capillary is melted by an electric torch, and takes a ball shape by its surface tension. (2) A capillary goes down and presses the gold ball on an aluminum terminal set on a semiconductor chip. (3) The capillary is vibrated by ultra sonic for connecting the gold ball with the aluminum terminal. (4) The capillary moves and mashes the gold wire on a lead finger. The quick wire Bonding Process shorter than 0.1 seconds is desired for high performance of a wire Bonding machine. High contact pressure is useful for shortening the Process cycle, but it sometimes causes the damage of the semiconductor chip. Especially, a GaAs chip is easy to be broken. This paper presents the damage estimation of a GaAs chip during the gold wire Bonding Process.
P.c.k. Liu - One of the best experts on this subject based on the ideXlab platform.
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Effect of electrode pattern on the outputs of piezosensors for wire Bonding Process control
Materials Science and Engineering B-advanced Functional Solid-state Materials, 2003Co-Authors: Siu San Chiu, Hlw L. W. Chan, Y.m. Cheung, P.c.k. LiuAbstract:A polyvinylidene fluoride (PVDF) piezosensor was installed as an integral part of an ultrasonic wire-Bonding transducer for measuring Bonding parameters, such as impact force, ultrasonic amplitude, and bond time. Four different types of electrode patterns were used to optimize the sensor outputs. When the ring-shaped electrode of the sensor was subdivided into four different sections, namely the top, bottom, left, and right sections, different output signals were observed during the wire-Bonding Process. The top section of the sensor was more sensitive to the impact force while the left and right sections could track the changes in the ultrasonic amplitude proficiently. This sensor has good potential to be used in an in situ automatic wire-Bonding Process-control system.
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Effect of electrode pattern on the outputs of piezosensors for wire Bonding Process control
Materials Science and Engineering: B, 2003Co-Authors: S.s. Chiu, Y.m. Cheung, Hlw L. W. Chan, P.c.k. LiuAbstract:Advanced Electronic-ceramic Materials. Proceedings of the 8th IUMRS-ICEM 2002, Xi'an, 10-14 June 2002A polyvinylidene fluoride (PVDF) piezosensor was installed as an integral part of an ultrasonic wire-Bonding transducer for measuring Bonding parameters, such as impact force, ultrasonic amplitude, and bond time. Four different types of electrode patterns were used to optimize the sensor outputs. When the ring-shaped electrode of the sensor was subdivided into four different sections, namely the top, bottom, left, and right sections, different output signals were observed during the wire-Bonding Process. The top section of the sensor was more sensitive to the impact force while the left and right sections could track the changes in the ultrasonic amplitude proficiently. This sensor has good potential to be used in an in situ automatic wire-Bonding Process-control system.Department of Applied Physic
Toru Ikeda - One of the best experts on this subject based on the ideXlab platform.
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Failure Estimation of Semiconductor Chip During Wire Bonding Process
Journal of Electronic Packaging, 1999Co-Authors: Toru Ikeda, Noriyuki Miyazaki, Kiyoteru Kudo, K. Arita, H. YakiyamaAbstract:Wire Bonding, a Process of the connection between a semiconductor chip and a lead frame by a thin metal wire, is one of the important Processes of electronic packaging. This paper presents failure estimation of a silicon chip and a GaAS chip during a gold wire Bonding Process. The gold wire Bonding Process is carried out by pressing a gold ball made at a tip of the gold wire on a semiconductor chip and vibrating it by ultrasonic. High contact pressure is useful for shortening the Process cycle, but it sometimes causes failure of the semiconductor chip. Elastic-plastic large deformation contact analyses are performed and the distributions of the stresses in these semiconductor chips are investigated. The possibility of failure of a semiconductor chip under usual wire Bonding pressure is pointed out only for a GaAs chip.
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Damage Analysis of Semiconductor Chip during Wire Bonding Process
Computational Mechanics ’95, 1995Co-Authors: Toru Ikeda, Noriyuki Miyazaki, Kiyoteru Kudo, Tsuyoshi MunakataAbstract:Wire Bonding, a Process for connection between a semiconductor chip and a lead frame by thin metal wire, is one of the important Processes of electronic packaging. Figure 1 shows a silicon chip connected with a lead frame by gold wire. The gold wire Bonding Process is performed as shown in Figure 2. (1) A tip of gold wire put out from a capillary is melted by an electric torch, and takes a ball shape by its surface tension. (2) A capillary goes down and presses the gold ball on an aluminum terminal set on a semiconductor chip. (3) The capillary is vibrated by ultra sonic for connecting the gold ball with the aluminum terminal. (4) The capillary moves and mashes the gold wire on a lead finger. The quick wire Bonding Process shorter than 0.1 seconds is desired for high performance of a wire Bonding machine. High contact pressure is useful for shortening the Process cycle, but it sometimes causes the damage of the semiconductor chip. Especially, a GaAs chip is easy to be broken. This paper presents the damage estimation of a GaAs chip during the gold wire Bonding Process.
John G. Lenard - One of the best experts on this subject based on the ideXlab platform.
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An examination of the accumulative roll-Bonding Process
Journal of Materials Processing Technology, 2004Co-Authors: György Krállics, John G. LenardAbstract:Abstract Ultra-low-carbon steel strips containing 0.002% C were rolled at 500 °C, following the steps of the accumulative roll-Bonding Process. Strips of 32 layers were created. The mechanical attributes after rolling and cooling were examined and the development of edge cracking was monitored. The metal’s yield and tensile strengths increased by 200–300% while the ductility dropped from a pre-rolled value of 75 to 4%. The rolling Process was stopped when cracking of the edges became pronounced. The shear strength of the bond was about 60% of the yield strength in shear. The accumulation of the retained strain after dynamic recovery caused cracking at the edges. A potential industrial application of the accumulative roll-Bonding Process, that of the creation of tailored blanks, is discussed.
Kiyoteru Kudo - One of the best experts on this subject based on the ideXlab platform.
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Failure Estimation of Semiconductor Chip During Wire Bonding Process
Journal of Electronic Packaging, 1999Co-Authors: Toru Ikeda, Noriyuki Miyazaki, Kiyoteru Kudo, K. Arita, H. YakiyamaAbstract:Wire Bonding, a Process of the connection between a semiconductor chip and a lead frame by a thin metal wire, is one of the important Processes of electronic packaging. This paper presents failure estimation of a silicon chip and a GaAS chip during a gold wire Bonding Process. The gold wire Bonding Process is carried out by pressing a gold ball made at a tip of the gold wire on a semiconductor chip and vibrating it by ultrasonic. High contact pressure is useful for shortening the Process cycle, but it sometimes causes failure of the semiconductor chip. Elastic-plastic large deformation contact analyses are performed and the distributions of the stresses in these semiconductor chips are investigated. The possibility of failure of a semiconductor chip under usual wire Bonding pressure is pointed out only for a GaAs chip.
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Damage Analysis of Semiconductor Chip during Wire Bonding Process
Computational Mechanics ’95, 1995Co-Authors: Toru Ikeda, Noriyuki Miyazaki, Kiyoteru Kudo, Tsuyoshi MunakataAbstract:Wire Bonding, a Process for connection between a semiconductor chip and a lead frame by thin metal wire, is one of the important Processes of electronic packaging. Figure 1 shows a silicon chip connected with a lead frame by gold wire. The gold wire Bonding Process is performed as shown in Figure 2. (1) A tip of gold wire put out from a capillary is melted by an electric torch, and takes a ball shape by its surface tension. (2) A capillary goes down and presses the gold ball on an aluminum terminal set on a semiconductor chip. (3) The capillary is vibrated by ultra sonic for connecting the gold ball with the aluminum terminal. (4) The capillary moves and mashes the gold wire on a lead finger. The quick wire Bonding Process shorter than 0.1 seconds is desired for high performance of a wire Bonding machine. High contact pressure is useful for shortening the Process cycle, but it sometimes causes the damage of the semiconductor chip. Especially, a GaAs chip is easy to be broken. This paper presents the damage estimation of a GaAs chip during the gold wire Bonding Process.