The Experts below are selected from a list of 285 Experts worldwide ranked by ideXlab platform
A K Suri - One of the best experts on this subject based on the ideXlab platform.
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pressureless sintering of Boron Carbide
Ceramics International, 2006Co-Authors: T Roy, C Subramanian, A K SuriAbstract:Abstract The processing of Boron Carbide by pressureless sintering with and without additives to obtain dense pellets for use as neutron absorber in fast breeder reactors is reported. The effect of particle size and sintering temperature on density and microstructure was studied. Pressureless sintering of Boron Carbide powder (0.5 μm) at 2375 °C yielded a pellet of 93% ρ th . Addition of zirconium dioxide was found to be beneficial in lowering the sintering temperature. A typical sample with 5 wt% zirconia addition sintered at 2275 °C resulted in a density of 93% ρ th and a micro hardness value (HK 100 ) of 32 GPa.
Manish Chhowalla - One of the best experts on this subject based on the ideXlab platform.
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Stabilization of Boron Carbide via silicon doping
Journal of Physics Condensed Matter, 2014Co-Authors: J. E. Proctor, V. Bhakhri, R. Hao, T. J. Prior, T. Scheler, Eugene Gregoryanz, Manish Chhowalla, F. GiulaniAbstract:Boron Carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate Boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the Boron Carbide to eliminate this polytype. In this work, we have synthesized Boron Carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped Boron Carbide following static compression to 50{~}GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.
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Boron Carbide: Structure, properties, and stability under stress
Journal of the American Ceramic Society, 2011Co-Authors: Vladislav Domnich, Richard A. Haber, Serge Reynaud, Manish ChhowallaAbstract:Boron Carbide is characterized by a unique combination of properties that make it a material of choice for a wide range of engineering applications. Boron Carbide is used in refractory applications due to its high melting point and thermal stability; it is used as abrasive powders and coatings due to its extreme abrasion resistance; it excels in ballistic performance due to its high hardness and low density; and it is commonly used in nuclear applications as neutron radiation absorbent. In addi- tion, Boron Carbide is a high temperature semiconductor that can potentially be used for novel electronic applications. This paper provides a comprehensive review of the recent advances in understanding of structural and chemical variations in Boron Carbide and their influence on electronic, optical, vibrational, mechanical, and ballistic properties. Structural instability of Boron Carbide under high stresses associated with external loading and the nature of the resulting disordered phase are also discussed.
C Subramanian - One of the best experts on this subject based on the ideXlab platform.
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Synthesis and consolidation of Boron Carbide: a review
International Materials Reviews, 2010Co-Authors: Ashok Kumar Suri, J. K. Sonber, C Subramanian, T.s.r.ch. MurthyAbstract:Boron Carbide is a strategic material, finding applications in nuclear industry, armour for personnel and vehicle safety, rocket propellant, etc. Its high hardness makes it suitable for grinding and cutting tools, ceramic bearing, wire drawing dies, etc. Boron Carbide is commercially produced either by carbothermic reduction of boric acid in electric furnaces or by magnesiothermy in presence of carbon. Since many specialty applications of Boron Carbide require dense bodies, its densification is of great importance. Hot pressing and hot isostatic pressing are the main processes employed for densification. In the recent past, various researchers have made attempts to improve the existing methods and also invent new processes for synthesis and consolidation of Boron Carbide. All the techniques on synthesis and consolidation of Boron Carbide are discussed in detail and critically reviewed.
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pressureless sintering of Boron Carbide
Ceramics International, 2006Co-Authors: T Roy, C Subramanian, A K SuriAbstract:Abstract The processing of Boron Carbide by pressureless sintering with and without additives to obtain dense pellets for use as neutron absorber in fast breeder reactors is reported. The effect of particle size and sintering temperature on density and microstructure was studied. Pressureless sintering of Boron Carbide powder (0.5 μm) at 2375 °C yielded a pellet of 93% ρ th . Addition of zirconium dioxide was found to be beneficial in lowering the sintering temperature. A typical sample with 5 wt% zirconia addition sintered at 2275 °C resulted in a density of 93% ρ th and a micro hardness value (HK 100 ) of 32 GPa.
T Roy - One of the best experts on this subject based on the ideXlab platform.
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pressureless sintering of Boron Carbide
Ceramics International, 2006Co-Authors: T Roy, C Subramanian, A K SuriAbstract:Abstract The processing of Boron Carbide by pressureless sintering with and without additives to obtain dense pellets for use as neutron absorber in fast breeder reactors is reported. The effect of particle size and sintering temperature on density and microstructure was studied. Pressureless sintering of Boron Carbide powder (0.5 μm) at 2375 °C yielded a pellet of 93% ρ th . Addition of zirconium dioxide was found to be beneficial in lowering the sintering temperature. A typical sample with 5 wt% zirconia addition sintered at 2275 °C resulted in a density of 93% ρ th and a micro hardness value (HK 100 ) of 32 GPa.
F. Giulani - One of the best experts on this subject based on the ideXlab platform.
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Stabilization of Boron Carbide via silicon doping
Journal of Physics Condensed Matter, 2014Co-Authors: J. E. Proctor, V. Bhakhri, R. Hao, T. J. Prior, T. Scheler, Eugene Gregoryanz, Manish Chhowalla, F. GiulaniAbstract:Boron Carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate Boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the Boron Carbide to eliminate this polytype. In this work, we have synthesized Boron Carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped Boron Carbide following static compression to 50{~}GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.