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N K Dutta - One of the best experts on this subject based on the ideXlab platform.

  • performance of gain guided surface emitting lasers with semiconductor distributed Bragg Reflectors
    IEEE Journal of Quantum Electronics, 1991
    Co-Authors: G Hasnain, L Yang, Yeongher Wang, J D Wynn, R J Fischer, B E Weir, N K Dutta
    Abstract:

    The performance limitations of gain-guided vertical cavity surface emitting lasers (VCSELs) which use epitaxially grown semiconductor distributed Bragg Reflectors (DBRs) are discussed. The light-current (L-I) characteristics and emission wavelength of such lasers are examined as a function of temperature and time under continuous wave (CW) and pulsed operation. The authors observed a sharp roll-over in the CW L-I characteristics which limits the maximum output power. The threshold current under CW operation is found to be lower than that obtained under pulsed conditions. Several microseconds long delay in lasing turn-on is also observed. It is shown quantitatively that these anomalies are a consequence of severe heating effects. It is shown that reduction of the series resistance and threshold current density can lead to significant improvements in the power performance of VCSELs. >

Isamu Akasaki - One of the best experts on this subject based on the ideXlab platform.

  • gan based vertical cavity surface emitting lasers with alinn gan distributed Bragg Reflectors
    Reports on Progress in Physics, 2019
    Co-Authors: Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    Abstract:

    This paper describes the status and prospects of gallium nitride-based vertical-cavity surface-emitting lasers (VCSELs) with semiconductor-based distributed Bragg Reflectors. These optoelectronic devices, which emit laser light from the violet to green region, are expected to be a superior light source for the next-generation of displays and illumination, such as retinal scanning displays and adaptive headlights. The development status and prospects are discussed in comparison with already commercialized gallium arsenide-based infrared VCSELs.

Olav Solgaard - One of the best experts on this subject based on the ideXlab platform.

Zlatko Sitar - One of the best experts on this subject based on the ideXlab platform.

  • high reflectivity iii nitride uv c distributed Bragg Reflectors for vertical cavity emitting lasers
    Journal of Applied Physics, 2016
    Co-Authors: Alexander Franke, Marc P Hoffmann, Ronny Kirste, Milena Bobea, James Tweedie, Felix Kaess, Michael Gerhold, Ramon Collazo, Zlatko Sitar
    Abstract:

    UV-C distributed Bragg Reflectors (DBRs) for vertical cavity surface emitting laser applications and polariton lasers are presented. The structural integrity of up to 25 layer pairs of AlN/Al0.65Ga0.35N DBRs is maintained by balancing the tensile and compressive strain present between the single layers of the multilayer stack grown on top of an Al0.85Ga0.35N template. By comparing the structural and optical properties for DBRs grown on low dislocation density AlN and AlGaN templates, the criteria for plastic relaxation by cracking thick nitride Bragg Reflectors are deduced. The critical thickness is found to be limited mainly by the accumulated strain energy during the DBR growth and is only negligibly affected by the dislocations. A reflectance of 97.7% at 273 nm is demonstrated. The demonstrated optical quality and an ability to tune the resonance wavelength of our resonators and microcavity structures open new opportunities for UV-C vertical emitters.

R J Molnar - One of the best experts on this subject based on the ideXlab platform.

  • high reflectivity ultraviolet algan algan distributed Bragg Reflectors
    Applied Physics Letters, 2006
    Co-Authors: Oleg Mitrofanov, Stefan Schmult, M J Manfra, T Siegrist, Nils Weimann, A M Sergent, R J Molnar
    Abstract:

    We demonstrate high-reflectivity crack-free Al0.18Ga0.82N∕Al0.8Ga0.2N distributed Bragg Reflectors (DBR) for the spectral region around 350nm grown by molecular-beam epitaxy on thick GaN templates. The structural quality of the DBR layers is maintained by compensating the compressive and tensile stress in each λ∕4 pair. This approach results in the lowest elastic strain energy and allows the growth of thick coherently strained DBRs. A 25 period mirror provides a 26nm wide stop band centered at 347nm with the maximum reflectivity higher than 99%.