The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Wataru Saito - One of the best experts on this subject based on the ideXlab platform.
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Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and Breakdown Voltage
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:The relation between Schottky gate leakage current and the Breakdown Voltage of AlGaN-GaN high-electron mobility transistors (HEMTs) is discussed based on the newly introduced simple, yet useful, surface defect charge model. This model represents the leakage current caused by the positive charge in the surface portion of AlGaN layer induced by process damage such as nitrogen vacancies. The new model has been implemented into a two-dimensional device simulator, and the relationship between the gate leakage current and the Breakdown Voltage was simulated. The simulation results reproduced the relationship obtained experimentally between the leakage current and the Breakdown Voltage. Further simulation and experiment results show that the Breakdown Voltage is maintained even if the defect charge exists up to the defect charge density of 2.5×1012 cm-2, provided the field plate structure is adopted, while the Breakdown Voltage shows a sudden drop for the defect density over 5×1011 cm-2 without the field plate. This result shows that the field plate structure is effective for suppressing the surface charge influence on Breakdown Voltage due to the relaxation of the electric field concentration in the surface portion of the AlGaN layer.
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design optimization of high Breakdown Voltage algan gan power hemt on an insulating substrate for r sub on a v sub b tradeoff characteristics
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, K Tsuda, T OguraAbstract:High Breakdown Voltage AlGaN-GaN power high-electron mobility transistors (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high Breakdown Voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the Breakdown Voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the Breakdown Voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 m/spl Omega//spl middot/cm/sup 2/ for the Breakdown Voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.
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high Breakdown Voltage undoped algan gan power hemt on sapphire substrate and its demonstration for dc dc converter application
IEEE Transactions on Electron Devices, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V Breakdown Voltage were fabricated and demonstrated as a main switching device for a high-Voltage dc-dc converter. The fabricated power HEMT realized a high Breakdown Voltage with a field plate structure and a low on-state resistance of 3.9 m/spl Omega//spl middot/cm/sup 2/, which is 10 /spl times/ lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input Voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
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design and demonstration of high Breakdown Voltage gan high electron mobility transistor hemt using field plate structure for power electronics applications
Japanese Journal of Applied Physics, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:AlGaN/GaN power high electron mobility transistors (HEMTs) with a Breakdown Voltage of 600 V are fabricated and demonstrated as switching power devices for motor drive and power supply applications. A high Breakdown Voltage was realized in the fabricated power-HEMT by the field plate technique and an ultra low on-state resistance of 3.3 mΩcm2, which is 20 times lower than the silicon limit, due to the high critical field of the GaN material and the high mobility in a two-dimensional electron gas channel. A device with the double-field plate structure was also designed using two-dimensional device simulation to increase the Breakdown Voltage without any increase of the GaN layer thickness.
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High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior
IEEE Transactions on Electron Devices, 2003Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo Ogura, Hiromichi OhashiAbstract:AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V Breakdown Voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high Breakdown Voltage by optimized field plate technique and the low on-state resistance of 3.3 mΩcm2, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm2 turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.
Ichiro Omura - One of the best experts on this subject based on the ideXlab platform.
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Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and Breakdown Voltage
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:The relation between Schottky gate leakage current and the Breakdown Voltage of AlGaN-GaN high-electron mobility transistors (HEMTs) is discussed based on the newly introduced simple, yet useful, surface defect charge model. This model represents the leakage current caused by the positive charge in the surface portion of AlGaN layer induced by process damage such as nitrogen vacancies. The new model has been implemented into a two-dimensional device simulator, and the relationship between the gate leakage current and the Breakdown Voltage was simulated. The simulation results reproduced the relationship obtained experimentally between the leakage current and the Breakdown Voltage. Further simulation and experiment results show that the Breakdown Voltage is maintained even if the defect charge exists up to the defect charge density of 2.5×1012 cm-2, provided the field plate structure is adopted, while the Breakdown Voltage shows a sudden drop for the defect density over 5×1011 cm-2 without the field plate. This result shows that the field plate structure is effective for suppressing the surface charge influence on Breakdown Voltage due to the relaxation of the electric field concentration in the surface portion of the AlGaN layer.
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design optimization of high Breakdown Voltage algan gan power hemt on an insulating substrate for r sub on a v sub b tradeoff characteristics
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, K Tsuda, T OguraAbstract:High Breakdown Voltage AlGaN-GaN power high-electron mobility transistors (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high Breakdown Voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the Breakdown Voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the Breakdown Voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 m/spl Omega//spl middot/cm/sup 2/ for the Breakdown Voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.
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high Breakdown Voltage undoped algan gan power hemt on sapphire substrate and its demonstration for dc dc converter application
IEEE Transactions on Electron Devices, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V Breakdown Voltage were fabricated and demonstrated as a main switching device for a high-Voltage dc-dc converter. The fabricated power HEMT realized a high Breakdown Voltage with a field plate structure and a low on-state resistance of 3.9 m/spl Omega//spl middot/cm/sup 2/, which is 10 /spl times/ lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input Voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
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design and demonstration of high Breakdown Voltage gan high electron mobility transistor hemt using field plate structure for power electronics applications
Japanese Journal of Applied Physics, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:AlGaN/GaN power high electron mobility transistors (HEMTs) with a Breakdown Voltage of 600 V are fabricated and demonstrated as switching power devices for motor drive and power supply applications. A high Breakdown Voltage was realized in the fabricated power-HEMT by the field plate technique and an ultra low on-state resistance of 3.3 mΩcm2, which is 20 times lower than the silicon limit, due to the high critical field of the GaN material and the high mobility in a two-dimensional electron gas channel. A device with the double-field plate structure was also designed using two-dimensional device simulation to increase the Breakdown Voltage without any increase of the GaN layer thickness.
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High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior
IEEE Transactions on Electron Devices, 2003Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo Ogura, Hiromichi OhashiAbstract:AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V Breakdown Voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high Breakdown Voltage by optimized field plate technique and the low on-state resistance of 3.3 mΩcm2, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm2 turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.
Yoshiharu Takada - One of the best experts on this subject based on the ideXlab platform.
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Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and Breakdown Voltage
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:The relation between Schottky gate leakage current and the Breakdown Voltage of AlGaN-GaN high-electron mobility transistors (HEMTs) is discussed based on the newly introduced simple, yet useful, surface defect charge model. This model represents the leakage current caused by the positive charge in the surface portion of AlGaN layer induced by process damage such as nitrogen vacancies. The new model has been implemented into a two-dimensional device simulator, and the relationship between the gate leakage current and the Breakdown Voltage was simulated. The simulation results reproduced the relationship obtained experimentally between the leakage current and the Breakdown Voltage. Further simulation and experiment results show that the Breakdown Voltage is maintained even if the defect charge exists up to the defect charge density of 2.5×1012 cm-2, provided the field plate structure is adopted, while the Breakdown Voltage shows a sudden drop for the defect density over 5×1011 cm-2 without the field plate. This result shows that the field plate structure is effective for suppressing the surface charge influence on Breakdown Voltage due to the relaxation of the electric field concentration in the surface portion of the AlGaN layer.
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design optimization of high Breakdown Voltage algan gan power hemt on an insulating substrate for r sub on a v sub b tradeoff characteristics
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, K Tsuda, T OguraAbstract:High Breakdown Voltage AlGaN-GaN power high-electron mobility transistors (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high Breakdown Voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the Breakdown Voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the Breakdown Voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 m/spl Omega//spl middot/cm/sup 2/ for the Breakdown Voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.
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high Breakdown Voltage undoped algan gan power hemt on sapphire substrate and its demonstration for dc dc converter application
IEEE Transactions on Electron Devices, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V Breakdown Voltage were fabricated and demonstrated as a main switching device for a high-Voltage dc-dc converter. The fabricated power HEMT realized a high Breakdown Voltage with a field plate structure and a low on-state resistance of 3.9 m/spl Omega//spl middot/cm/sup 2/, which is 10 /spl times/ lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input Voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
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design and demonstration of high Breakdown Voltage gan high electron mobility transistor hemt using field plate structure for power electronics applications
Japanese Journal of Applied Physics, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:AlGaN/GaN power high electron mobility transistors (HEMTs) with a Breakdown Voltage of 600 V are fabricated and demonstrated as switching power devices for motor drive and power supply applications. A high Breakdown Voltage was realized in the fabricated power-HEMT by the field plate technique and an ultra low on-state resistance of 3.3 mΩcm2, which is 20 times lower than the silicon limit, due to the high critical field of the GaN material and the high mobility in a two-dimensional electron gas channel. A device with the double-field plate structure was also designed using two-dimensional device simulation to increase the Breakdown Voltage without any increase of the GaN layer thickness.
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High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior
IEEE Transactions on Electron Devices, 2003Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo Ogura, Hiromichi OhashiAbstract:AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V Breakdown Voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high Breakdown Voltage by optimized field plate technique and the low on-state resistance of 3.3 mΩcm2, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm2 turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.
Masahiko Kuraguchi - One of the best experts on this subject based on the ideXlab platform.
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Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and Breakdown Voltage
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:The relation between Schottky gate leakage current and the Breakdown Voltage of AlGaN-GaN high-electron mobility transistors (HEMTs) is discussed based on the newly introduced simple, yet useful, surface defect charge model. This model represents the leakage current caused by the positive charge in the surface portion of AlGaN layer induced by process damage such as nitrogen vacancies. The new model has been implemented into a two-dimensional device simulator, and the relationship between the gate leakage current and the Breakdown Voltage was simulated. The simulation results reproduced the relationship obtained experimentally between the leakage current and the Breakdown Voltage. Further simulation and experiment results show that the Breakdown Voltage is maintained even if the defect charge exists up to the defect charge density of 2.5×1012 cm-2, provided the field plate structure is adopted, while the Breakdown Voltage shows a sudden drop for the defect density over 5×1011 cm-2 without the field plate. This result shows that the field plate structure is effective for suppressing the surface charge influence on Breakdown Voltage due to the relaxation of the electric field concentration in the surface portion of the AlGaN layer.
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design optimization of high Breakdown Voltage algan gan power hemt on an insulating substrate for r sub on a v sub b tradeoff characteristics
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, K Tsuda, T OguraAbstract:High Breakdown Voltage AlGaN-GaN power high-electron mobility transistors (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high Breakdown Voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the Breakdown Voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the Breakdown Voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 m/spl Omega//spl middot/cm/sup 2/ for the Breakdown Voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.
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high Breakdown Voltage undoped algan gan power hemt on sapphire substrate and its demonstration for dc dc converter application
IEEE Transactions on Electron Devices, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V Breakdown Voltage were fabricated and demonstrated as a main switching device for a high-Voltage dc-dc converter. The fabricated power HEMT realized a high Breakdown Voltage with a field plate structure and a low on-state resistance of 3.9 m/spl Omega//spl middot/cm/sup 2/, which is 10 /spl times/ lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input Voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
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design and demonstration of high Breakdown Voltage gan high electron mobility transistor hemt using field plate structure for power electronics applications
Japanese Journal of Applied Physics, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:AlGaN/GaN power high electron mobility transistors (HEMTs) with a Breakdown Voltage of 600 V are fabricated and demonstrated as switching power devices for motor drive and power supply applications. A high Breakdown Voltage was realized in the fabricated power-HEMT by the field plate technique and an ultra low on-state resistance of 3.3 mΩcm2, which is 20 times lower than the silicon limit, due to the high critical field of the GaN material and the high mobility in a two-dimensional electron gas channel. A device with the double-field plate structure was also designed using two-dimensional device simulation to increase the Breakdown Voltage without any increase of the GaN layer thickness.
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High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior
IEEE Transactions on Electron Devices, 2003Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo Ogura, Hiromichi OhashiAbstract:AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V Breakdown Voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high Breakdown Voltage by optimized field plate technique and the low on-state resistance of 3.3 mΩcm2, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm2 turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.
Tsuneo Ogura - One of the best experts on this subject based on the ideXlab platform.
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Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and Breakdown Voltage
IEEE Transactions on Electron Devices, 2005Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:The relation between Schottky gate leakage current and the Breakdown Voltage of AlGaN-GaN high-electron mobility transistors (HEMTs) is discussed based on the newly introduced simple, yet useful, surface defect charge model. This model represents the leakage current caused by the positive charge in the surface portion of AlGaN layer induced by process damage such as nitrogen vacancies. The new model has been implemented into a two-dimensional device simulator, and the relationship between the gate leakage current and the Breakdown Voltage was simulated. The simulation results reproduced the relationship obtained experimentally between the leakage current and the Breakdown Voltage. Further simulation and experiment results show that the Breakdown Voltage is maintained even if the defect charge exists up to the defect charge density of 2.5×1012 cm-2, provided the field plate structure is adopted, while the Breakdown Voltage shows a sudden drop for the defect density over 5×1011 cm-2 without the field plate. This result shows that the field plate structure is effective for suppressing the surface charge influence on Breakdown Voltage due to the relaxation of the electric field concentration in the surface portion of the AlGaN layer.
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high Breakdown Voltage undoped algan gan power hemt on sapphire substrate and its demonstration for dc dc converter application
IEEE Transactions on Electron Devices, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V Breakdown Voltage were fabricated and demonstrated as a main switching device for a high-Voltage dc-dc converter. The fabricated power HEMT realized a high Breakdown Voltage with a field plate structure and a low on-state resistance of 3.9 m/spl Omega//spl middot/cm/sup 2/, which is 10 /spl times/ lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input Voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
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design and demonstration of high Breakdown Voltage gan high electron mobility transistor hemt using field plate structure for power electronics applications
Japanese Journal of Applied Physics, 2004Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo OguraAbstract:AlGaN/GaN power high electron mobility transistors (HEMTs) with a Breakdown Voltage of 600 V are fabricated and demonstrated as switching power devices for motor drive and power supply applications. A high Breakdown Voltage was realized in the fabricated power-HEMT by the field plate technique and an ultra low on-state resistance of 3.3 mΩcm2, which is 20 times lower than the silicon limit, due to the high critical field of the GaN material and the high mobility in a two-dimensional electron gas channel. A device with the double-field plate structure was also designed using two-dimensional device simulation to increase the Breakdown Voltage without any increase of the GaN layer thickness.
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High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior
IEEE Transactions on Electron Devices, 2003Co-Authors: Wataru Saito, Kunio Tsuda, Masahiko Kuraguchi, Yoshiharu Takada, Ichiro Omura, Tsuneo Ogura, Hiromichi OhashiAbstract:AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V Breakdown Voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high Breakdown Voltage by optimized field plate technique and the low on-state resistance of 3.3 mΩcm2, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm2 turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.