The Experts below are selected from a list of 99234 Experts worldwide ranked by ideXlab platform
A A Abidi - One of the best experts on this subject based on the ideXlab platform.
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fet r C CirCuits a unified treatment part ii extension to multi paths noise figure and driving point impedanCe
IEEE Transactions on Circuits and Systems, 2016Co-Authors: Tetsuya Iizuka, A A AbidiAbstract:In Part I of this paper, we introduCe useful analysis that leads to a simple signal flow graph (SFG), whiCh Captures the FET-R-C CirCuit's aCtion Completely aCross a wide range of design parameters. Part I foCuses on the analysis of a single-path FET-R-C CirCuit's signal transfer CharaCteristiCs and gives us guidelines for sample-and-hold (S/H) and passive sampling mixer (P-M) designs. Part II extends the analysis to multi-path FET-R-C CirCuit Configurations, e.g., a Complex $I$ - $Q$ passive mixer that is Common in RF appliCations. Then the noise and driving-point impedanCe analyses are Carried out to provide valuable insights of praCtiCal S/H and P-M designs.
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fet r C CirCuits a unified treatment part i signal transfer CharaCteristiCs of a single path
IEEE Transactions on Circuits and Systems, 2016Co-Authors: Tetsuya Iizuka, A A AbidiAbstract:A frequently oCCurring subCirCuit Consists of a loop of a resistor (R), a field-effeCt transistor (FET), and a CapaCitor (C). The FET aCts as a switCh, Controlled at its gate terminal by a CloCk voltage. There may be many suCh identiCal CirCuits ConneCted in parallel, eaCh driven by a different phase of the CloCk. This subCirCuit may be aCting as a sample-and-hold (S/H), as a passive mixer (P-M), or as a bandpass filter or bandpass impedanCe. In this work, we will present a useful analysis that leads to a simple signal flow graph (SFG), whiCh Captures the FET-R-C CirCuit's aCtion Completely aCross a wide range of design parameters. The SFG disseCts the CirCuit into three filtering funCtions and ideal sampling. This greatly simplifies analysis of frequenCy response, noise, input impedanCe, and Conversion gain, and leads to guidelines for optimum design. The analysis is extended to multi-path realizations Common in RF appliCations. Part I of this paper foCuses on the analyses of a single-path FET-R-C CirCuit's signal transfer CharaCteristiCs. Part II extends these analyses to multi-path FET-R-C CirCuit Configurations, whiCh is followed by the noise and driving-point impedanCe analyses.
Hsuanyu Pan - One of the best experts on this subject based on the ideXlab platform.
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an analysis of the anomalous dip in sCattering parameter s sub 22 of ingap gaas heterojunCtion bipolar transistors hbts
IEEE Transactions on Electron Devices, 2002Co-Authors: Yosheng Lin, Pingyu Chen, Hsuanyu PanAbstract:The kink phenomenon in sCattering parameter S/sub 22/ of InGaP-GaAs heterojunCtion bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedanCe of InGaP-GaAs HBTs Can be represented by a simple series resistanCe-CapaCitanCe (R-C) CirCuit at low frequenCies and a simple parallel R-C CirCuit at high frequenCies very aCCurately beCause of the high output resistanCe of HBTs. The behavior of S/sub 22/ of HBTs is in Contrast with that of field effeCt transistors (FETs), where the smaller drain-sourCe output resistanCe R/sub ds/ obsCures the ambivalent CharaCteristiCs.
Tetsuya Iizuka - One of the best experts on this subject based on the ideXlab platform.
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fet r C CirCuits a unified treatment part ii extension to multi paths noise figure and driving point impedanCe
IEEE Transactions on Circuits and Systems, 2016Co-Authors: Tetsuya Iizuka, A A AbidiAbstract:In Part I of this paper, we introduCe useful analysis that leads to a simple signal flow graph (SFG), whiCh Captures the FET-R-C CirCuit's aCtion Completely aCross a wide range of design parameters. Part I foCuses on the analysis of a single-path FET-R-C CirCuit's signal transfer CharaCteristiCs and gives us guidelines for sample-and-hold (S/H) and passive sampling mixer (P-M) designs. Part II extends the analysis to multi-path FET-R-C CirCuit Configurations, e.g., a Complex $I$ - $Q$ passive mixer that is Common in RF appliCations. Then the noise and driving-point impedanCe analyses are Carried out to provide valuable insights of praCtiCal S/H and P-M designs.
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fet r C CirCuits a unified treatment part i signal transfer CharaCteristiCs of a single path
IEEE Transactions on Circuits and Systems, 2016Co-Authors: Tetsuya Iizuka, A A AbidiAbstract:A frequently oCCurring subCirCuit Consists of a loop of a resistor (R), a field-effeCt transistor (FET), and a CapaCitor (C). The FET aCts as a switCh, Controlled at its gate terminal by a CloCk voltage. There may be many suCh identiCal CirCuits ConneCted in parallel, eaCh driven by a different phase of the CloCk. This subCirCuit may be aCting as a sample-and-hold (S/H), as a passive mixer (P-M), or as a bandpass filter or bandpass impedanCe. In this work, we will present a useful analysis that leads to a simple signal flow graph (SFG), whiCh Captures the FET-R-C CirCuit's aCtion Completely aCross a wide range of design parameters. The SFG disseCts the CirCuit into three filtering funCtions and ideal sampling. This greatly simplifies analysis of frequenCy response, noise, input impedanCe, and Conversion gain, and leads to guidelines for optimum design. The analysis is extended to multi-path realizations Common in RF appliCations. Part I of this paper foCuses on the analyses of a single-path FET-R-C CirCuit's signal transfer CharaCteristiCs. Part II extends these analyses to multi-path FET-R-C CirCuit Configurations, whiCh is followed by the noise and driving-point impedanCe analyses.
Yosheng Lin - One of the best experts on this subject based on the ideXlab platform.
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an analysis of the anomalous dip in sCattering parameter s sub 22 of ingap gaas heterojunCtion bipolar transistors hbts
IEEE Transactions on Electron Devices, 2002Co-Authors: Yosheng Lin, Pingyu Chen, Hsuanyu PanAbstract:The kink phenomenon in sCattering parameter S/sub 22/ of InGaP-GaAs heterojunCtion bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedanCe of InGaP-GaAs HBTs Can be represented by a simple series resistanCe-CapaCitanCe (R-C) CirCuit at low frequenCies and a simple parallel R-C CirCuit at high frequenCies very aCCurately beCause of the high output resistanCe of HBTs. The behavior of S/sub 22/ of HBTs is in Contrast with that of field effeCt transistors (FETs), where the smaller drain-sourCe output resistanCe R/sub ds/ obsCures the ambivalent CharaCteristiCs.
Jennifer Paratz - One of the best experts on this subject based on the ideXlab platform.
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the effeCt of positive end expiratory pressure level on peak expiratory flow during manual hyperinflation
Anesthesia & Analgesia, 2005Co-Authors: Camila Savian, Pamela Chan, Jennifer ParatzAbstract:InCluding positive end-expiratory pressure (PEEP) in the manual resusCitation bag (MRB) may render manual hyperinflation (MHI) ineffeCtive as a seCretion maneuver teChnique in meChaniCally ventilated patients. In this study we aimed to determine the effeCt of inCreased PEEP or deCreased ComplianCe on peak expiratory flow rate (PEF) during MHI. A blinded, randomized study was performed on a lung simulator by 10 physiotherapists experienCed in MHI and intensive Care praCtiCe. PEEP levels of 0-15 Cm H2O, ComplianCe levels of 0.05 and 0.02 L/Cm H2O, and MRB type were randomized. The Mapleson-C MRB generated signifiCantly higher PEF (P < 0.01, d = 2.72) when Compared with the Laerdal MRB for all levels of PEEP. In normal ComplianCe (0.05 L/Cm H2O) there was a signifiCant deCrease in PEF (P < 0.01, d = 1.45) for a PEEP more than 10 Cm H2O in the Mapleson-C CirCuit. The Laerdal MRB at PEEP levels of more than 10 Cm H2O did not generate a PEF that is theoretiCally Capable of produCing two-phase gas-liquid flow and, Consequently, mobilizing pulmonary seCretions. If MHI is indiCated as a result of muCous plugging, the Mapleson-C MRB may be the most effeCtive method of seCretion mobilization.
