Transistor

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Hae-seung Lee - One of the best experts on this subject based on the ideXlab platform.

  • An NMOS input merged bipolar/sidewall-MOS Transistor with a bypass sidewall MOS Transistor (NBiBMOS Transistor)
    IEEE Electron Device Letters, 1992
    Co-Authors: J.j. Lutsky, R. Reif, Hae-seung Lee
    Abstract:

    The concept of merging a vertical n-p-n bipolar and two sidewall NMOS Transistors into an NMOS input merged bipolar/sidewall-MOS Transistor with a bypass sidewall NMOS Transistor structure (NBiBMOS Transistor) is described. The output current of this structure, unlike that of NBiMOS Transistors, is significant even when the output voltage (V/sub CE/ or V/sub DE/) is less than the turn-on voltage of the n-p-n bipolar Transistor (V/sub BE/= approximately 0.8 V). This structure, when used in BiCMOS logic gates, will allow the output voltage to swing all the way to 0.0 V rather than to 0.8 V. The feasibility of this concept was demonstrated by fabricating and DC characterizing the NBiBMOS Transistor structures, which occupy approximately 1.2 times the area of a single n-p-n bipolar Transistor. The NBiBMOS Transistor has a higher drive capability than that of a structure consisting of an NBiMOS and a separate bypass Transistor, because the body-source junction of the bypass NMOS Transistor is forward biased. >

  • PMOS input merged bipolar/sidewall MOS Transistors (PBiMOS Transistors)
    IEEE Electron Device Letters, 1991
    Co-Authors: R. Reif, Hae-seung Lee
    Abstract:

    A concept of merging vertical n-p-n bipolar and sidewall PMOS Transistors into merged PBiMOS Transistors is described. This concept allows device structures which perform more complex functions to be integrated into a given area. The feasibility of this concept is demonstrated by fabricating and DC characterizing PBiMOS Transistor structures which occupy approximately 1.1 times the area of a single n-p-n bipolar Transistor. The PMOS sidewall Transistor characterization results suggest that a reasonable control of the key device parameters may be achieved. These results also suggest that, for the 23-nm gate oxide thickness, the doping requirements for the n/sup -/ collector of the n-p-n bipolar and the channel of the sidewall PMOS Transistors are similar. >

Ray-hua Horng - One of the best experts on this subject based on the ideXlab platform.

  • Thin Film Transistor
    Crystals, 2019
    Co-Authors: Ray-hua Horng
    Abstract:

    The special issue is "Thin Film Transistor". There are eight contributed papers. They focus on organic thin film Transistors, fluorinated oligothiophenes Transistors, surface treated or hydrogen effect on oxide-semiconductor-based thin film Transistors, and their corresponding application in flat panel displays and optical detecting. The present special issue on “Thin Film Transistor” can be considered as a status report reviewing the progress that has been made recently on thin film Transistor technology. These papers can provide the readers with more research information and corresponding application potential about Thin Film Transistors.

Jeanpierre Colinge - One of the best experts on this subject based on the ideXlab platform.

  • multigate Transistors as the future of classical metal oxide semiconductor field effect Transistors
    Nature, 2011
    Co-Authors: I Ferain, Cynthia A Colinge, Jeanpierre Colinge
    Abstract:

    For more than four decades, Transistors have been shrinking exponentially in size, and therefore the number of Transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal–oxidesemiconductor field-effect Transistor (MOSFET). In the current generation of Transistors, the Transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in Transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate Transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.

  • Multigate Transistors as the future of classical metal–oxide–semiconductor field-effect Transistors
    Nature, 2011
    Co-Authors: I Ferain, Cynthia A Colinge, Jeanpierre Colinge
    Abstract:

    For more than four decades, Transistors have been shrinking exponentially in size, and therefore the number of Transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal–oxidesemiconductor field-effect Transistor (MOSFET). In the current generation of Transistors, the Transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in Transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate Transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.

Sigurd Wagner - One of the best experts on this subject based on the ideXlab platform.

  • Flexible ferroelectret field-effect Transistor for large-area sensor skins and microphones
    Applied Physics Letters, 2006
    Co-Authors: Ingrid Graz, Christoph Keplinger, Martin Kaltenbrunner, St́phanie P. Lacour, Reinhard Schwödiauer, Siegfried Bauer, Sigurd Wagner
    Abstract:

    Ferroelectrets generate an electric field large enough to modulate the conductance of the source-drain channel of a thin-film field-effect Transistor. Integrating a ferroelectret with a thin-film Transistor produces a ferroelectret field-effect Transistor. The authors made such Transistors by laminating cellular polypropylene films and amorphous silicon thin-film Transistors on polyimide substrates. They show that these ferrroelectret field-effect Transistors respond in a static capacitive or dynamic piezoelectric mode. A touch sensor, a pressure-activated switch, and a microphone are demonstrated. The structure can be scaled up to large-area flexible transducer arrays, such as roll-up steerable compliant sensor skin.

I Ferain - One of the best experts on this subject based on the ideXlab platform.

  • multigate Transistors as the future of classical metal oxide semiconductor field effect Transistors
    Nature, 2011
    Co-Authors: I Ferain, Cynthia A Colinge, Jeanpierre Colinge
    Abstract:

    For more than four decades, Transistors have been shrinking exponentially in size, and therefore the number of Transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal–oxidesemiconductor field-effect Transistor (MOSFET). In the current generation of Transistors, the Transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in Transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate Transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.

  • Multigate Transistors as the future of classical metal–oxide–semiconductor field-effect Transistors
    Nature, 2011
    Co-Authors: I Ferain, Cynthia A Colinge, Jeanpierre Colinge
    Abstract:

    For more than four decades, Transistors have been shrinking exponentially in size, and therefore the number of Transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal–oxidesemiconductor field-effect Transistor (MOSFET). In the current generation of Transistors, the Transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in Transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate Transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.