The Experts below are selected from a list of 1893 Experts worldwide ranked by ideXlab platform

Yuelin Wang - One of the best experts on this subject based on the ideXlab platform.

  • design and fabrication of a mems Capacitive Accelerometer with fully symmetrical double sided h shaped beam structure
    Microelectronic Engineering, 2015
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Shenglin Liang, Yuelin Wang
    Abstract:

    Display Omitted We design a MEMS Capacitive Accelerometer with fully symmetrical double-sided H-shaped beam.A simplified analytical model of the H-shaped beam-mass structure and numerical simulations are presented.The fabrication process flow of Accelerometer is presented in detail.Primary characterization of the Accelerometers is performed. This paper presents a MEMS Capacitive Accelerometer with fully symmetrical double-sided H-shaped beam structure. The fully symmetrical structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxide layer and device layer on both sides of a thick handle layer. A large proof mass with through wafer thickness (560µm) is fabricated in this process. Two layers of single crystal silicon H-shaped beams with highly controllable dimension suspend the proof mass from both sides. The resonance frequency of the Accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 106 and 2.24kHz, respectively. The Accelerometer with open loop interface circuit is calibrated on B&K Vibration Transducer Calibration System (Type 3629). The sensitivity of the device is 0.24V/g, and the nonlinearity is 0.29% over the range of 0-1g.

  • Design and fabrication of a micro-electromechanical system sandwich Capacitive Accelerometer
    The 9th IEEE International Conference on Nano Micro Engineered and Molecular Systems (NEMS), 2014
    Co-Authors: Xiaofeng Zhou, Jian Wu, Xiaolin Li, Yuelin Wang
    Abstract:

    This paper reports a micro-gravity MEMS sandwich Capacitive Accelerometer with symmetrical double-sided folded beam-mass structure. The beam-mass structure is fabricated from a single double-device-layer SOI wafer (D-SOI). The fabrication process produced proof mass with though wafer thickness (860μm) to enable formation of a larger proof mass. The suspension system of eight folded beams with highly controllable dimension suspends the proof mass from both sides. A sandwich differential Capacitive Accelerometer based on symmetrical double-sided folded beams-mass structure is fabricated by three-layer silicon/silicon wafer direct bonding. The resonance frequency of the developed device is measured in an open-loop system by a network analyzer. The quality factor and the resonant frequency are 18 and 830Hz, respectively. The Accelerometer has a closed-loop sensitivity of 1.8V/g and a nonlinearity of 0.52% over the range of 1g.

  • a novel sandwich Capacitive Accelerometer with a double sided 16 beam mass structure
    Microelectronic Engineering, 2014
    Co-Authors: Wei Li, Zhaohui Song, Xiaolin Li, Yuelin Wang
    Abstract:

    A novel sandwich Capacitive Accelerometer with a double-sided, 16-beam-mass structure is presented. In this design, the proof mass is supported by 16 tiny beams distributed uniformly on both sides, which aims to dramatically reduce the cross-axis response. Parameters of the beam-mass structure are analyzed and optimized by analytical modeling and the finite element analysis (FEA) method. The micro-Accelerometer is fabricated by bulk micromachining technology, and the proof mass and tiny beams are released by KOH anisotropic wet etching from both sides of the silicon wafer, simultaneously. The resonance frequency and the quality factor of the Accelerometer are 4.34kHz and 311, respectively, which are measured in an open-loop system. The measurement results show that the Accelerometer has a full-scale (FS) range of 30g, a close-loop sensitivity of 80mV/g, and a nonlinearity of 0.27% of FS. The cross-axis sensitivities are 0.353% (x/z axis) and 0.045% (y/z axis), respectively. The bias stability is 0.63mg for an hour. The Accelerometer can withstand high shock of over 10,000g.

  • a novel Capacitive Accelerometer with a highly symmetrical double sided beam mass structure
    Sensors and Actuators A-physical, 2012
    Co-Authors: Xiaofeng Zhou, Bin Xiong, Jian Wu, Xiaolin Li, Yuelin Wang
    Abstract:

    This paper reports a novel Capacitive Accelerometer with highly symmetrical double-sided beam-mass structure. The highly symmetrical structure is fabricated from single wafer by a novel vertical sidewall protection technique. The good device performance i

Y. Matsumoto - One of the best experts on this subject based on the ideXlab platform.

  • three axis soi Capacitive Accelerometer with pll c v converter
    Sensors and Actuators A-physical, 1999
    Co-Authors: Y. Matsumoto, M Nishimura, M Matsuura, M. Ishida
    Abstract:

    Abstract A three-axis Capacitive Accelerometer has been developed using silicon-direct-bonding SOI wafer. Z -axis Accelerometer has 1 mm×1 mm plane mass and spiral shape beams of few millimeters in length. The mass and beams were formed using 6 μm thick single-crystal silicon. A gap of 1 μm has been maintained between the mass and one-side plate. X - and Y -axis Accelerometers have comb structure of 3 mm×1 mm size and folded beams of few millimeters in length. Length of comb electrodes is 200 μm, and a gap of 4 μm is maintained between them. Initial sensor capacitance was about 5 pF for Z -axis Accelerometers and 2 pF for X - and Y -axis Accelerometers. Sacrificial etching process was performed using 73% HF solution without attacking aluminum metallization. `After-rinse stiction' was prevented using photoresist buried plug and side stopper with on yield of better than 90%. `In-use stiction' was prevented using fluorocarbon film formed by plasma polymerization equipment. The sensor characteristics were measured with PLL capacitance to voltage converter IC that was custom designed to reduce parasitic capacitance error and electric static error with offset and sensitivity calibration functions.

  • a Capacitive Accelerometer using sdb soi structure
    Sensors and Actuators A-physical, 1996
    Co-Authors: Y. Matsumoto, H. Tanaka, M. Ishida, Moritaka Iwakiri, Tetsuro Nakamura
    Abstract:

    A Capacitive Accelerometer using SDB-SOI (silicon direct bonding-silicon on insulator) structure has been developed. The mass and beams of the Accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of Accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the Accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G−1 and wide frequency response of 200 Hz have been achieved.

  • A Capacitive Accelerometer Using Sdb-soi Structure
    Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95, 1995
    Co-Authors: Y. Matsumoto, M. Iwakdri, H. Tanaka, M. Ishida, Tetsuro Nakamura
    Abstract:

    A novel Capacitive Accelerometer using SDB-SOI(Si1icon Direct Bonding - Silicon On Insulator) structure has been proposed. The mass and beams of the Accelerometer were fabricated with single crystal silicon layer in the thickness of lop m. The beam was formed in Swastika (e) shape to obtain longest beam in minimum area. The fabrication process was simplified by utilization of SO1 structure. Seven kinds of Accelerometers for different measurement ranges were integrated in the same chip. The capacitance changes of the Accelerometers were detected by capacitance to voltage converter IC(TI28882D), and the output characteristics were evaluated.

  • integrated silicon Capacitive Accelerometer with pll servo technique
    Sensors and Actuators A-physical, 1993
    Co-Authors: Y. Matsumoto, Masayoshi Esashi
    Abstract:

    Abstract An integrated silicon Capacitive Accelerometer has been developed with CMOS and micromachining technology. The Accelerometer chip has glass—silicon—glass structure and is 3.7 × 4.5 × 0.9 mm 3 in size. A silicon seismic mass is suspended with silicon-oxinitride beams in full symmetry. The sensor capacitance is formed between the silicon mass and a metal electrode on the upper glass. A CMOS capacitance to frequency (C–F) converter is integrated on the silicon chip. The circuit is designed to be stable to temperature and supply voltage. The circuit has a reference capacitor in it, and the drift of the circuit is compensated by the information obtained when the circuit is connected to the reference capacitor. The output frequency of the Accelerometer chip varies linearly with acceleration. The force-balancing system has been realized using the Accelerometer chip and an outer phase-locked-loop (PLL) servo circuit. The output voltage varies linearly with acceleration, and the sensitivity and offset of the output voltage can be adjusted with the outer circuit parameter.

M. Ishida - One of the best experts on this subject based on the ideXlab platform.

  • three axis soi Capacitive Accelerometer with pll c v converter
    Sensors and Actuators A-physical, 1999
    Co-Authors: Y. Matsumoto, M Nishimura, M Matsuura, M. Ishida
    Abstract:

    Abstract A three-axis Capacitive Accelerometer has been developed using silicon-direct-bonding SOI wafer. Z -axis Accelerometer has 1 mm×1 mm plane mass and spiral shape beams of few millimeters in length. The mass and beams were formed using 6 μm thick single-crystal silicon. A gap of 1 μm has been maintained between the mass and one-side plate. X - and Y -axis Accelerometers have comb structure of 3 mm×1 mm size and folded beams of few millimeters in length. Length of comb electrodes is 200 μm, and a gap of 4 μm is maintained between them. Initial sensor capacitance was about 5 pF for Z -axis Accelerometers and 2 pF for X - and Y -axis Accelerometers. Sacrificial etching process was performed using 73% HF solution without attacking aluminum metallization. `After-rinse stiction' was prevented using photoresist buried plug and side stopper with on yield of better than 90%. `In-use stiction' was prevented using fluorocarbon film formed by plasma polymerization equipment. The sensor characteristics were measured with PLL capacitance to voltage converter IC that was custom designed to reduce parasitic capacitance error and electric static error with offset and sensitivity calibration functions.

  • a Capacitive Accelerometer using sdb soi structure
    Sensors and Actuators A-physical, 1996
    Co-Authors: Y. Matsumoto, H. Tanaka, M. Ishida, Moritaka Iwakiri, Tetsuro Nakamura
    Abstract:

    A Capacitive Accelerometer using SDB-SOI (silicon direct bonding-silicon on insulator) structure has been developed. The mass and beams of the Accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of Accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the Accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G−1 and wide frequency response of 200 Hz have been achieved.

  • A Capacitive Accelerometer Using Sdb-soi Structure
    Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95, 1995
    Co-Authors: Y. Matsumoto, M. Iwakdri, H. Tanaka, M. Ishida, Tetsuro Nakamura
    Abstract:

    A novel Capacitive Accelerometer using SDB-SOI(Si1icon Direct Bonding - Silicon On Insulator) structure has been proposed. The mass and beams of the Accelerometer were fabricated with single crystal silicon layer in the thickness of lop m. The beam was formed in Swastika (e) shape to obtain longest beam in minimum area. The fabrication process was simplified by utilization of SO1 structure. Seven kinds of Accelerometers for different measurement ranges were integrated in the same chip. The capacitance changes of the Accelerometers were detected by capacitance to voltage converter IC(TI28882D), and the output characteristics were evaluated.

Xiaofeng Zhou - One of the best experts on this subject based on the ideXlab platform.

  • design and fabrication of a mems Capacitive Accelerometer with fully symmetrical double sided h shaped beam structure
    Microelectronic Engineering, 2015
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Shenglin Liang, Yuelin Wang
    Abstract:

    Display Omitted We design a MEMS Capacitive Accelerometer with fully symmetrical double-sided H-shaped beam.A simplified analytical model of the H-shaped beam-mass structure and numerical simulations are presented.The fabrication process flow of Accelerometer is presented in detail.Primary characterization of the Accelerometers is performed. This paper presents a MEMS Capacitive Accelerometer with fully symmetrical double-sided H-shaped beam structure. The fully symmetrical structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxide layer and device layer on both sides of a thick handle layer. A large proof mass with through wafer thickness (560µm) is fabricated in this process. Two layers of single crystal silicon H-shaped beams with highly controllable dimension suspend the proof mass from both sides. The resonance frequency of the Accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 106 and 2.24kHz, respectively. The Accelerometer with open loop interface circuit is calibrated on B&K Vibration Transducer Calibration System (Type 3629). The sensitivity of the device is 0.24V/g, and the nonlinearity is 0.29% over the range of 0-1g.

  • Design and fabrication of a micro-electromechanical system sandwich Capacitive Accelerometer
    The 9th IEEE International Conference on Nano Micro Engineered and Molecular Systems (NEMS), 2014
    Co-Authors: Xiaofeng Zhou, Jian Wu, Xiaolin Li, Yuelin Wang
    Abstract:

    This paper reports a micro-gravity MEMS sandwich Capacitive Accelerometer with symmetrical double-sided folded beam-mass structure. The beam-mass structure is fabricated from a single double-device-layer SOI wafer (D-SOI). The fabrication process produced proof mass with though wafer thickness (860μm) to enable formation of a larger proof mass. The suspension system of eight folded beams with highly controllable dimension suspends the proof mass from both sides. A sandwich differential Capacitive Accelerometer based on symmetrical double-sided folded beams-mass structure is fabricated by three-layer silicon/silicon wafer direct bonding. The resonance frequency of the developed device is measured in an open-loop system by a network analyzer. The quality factor and the resonant frequency are 18 and 830Hz, respectively. The Accelerometer has a closed-loop sensitivity of 1.8V/g and a nonlinearity of 0.52% over the range of 1g.

  • a novel Capacitive Accelerometer with a highly symmetrical double sided beam mass structure
    Sensors and Actuators A-physical, 2012
    Co-Authors: Xiaofeng Zhou, Bin Xiong, Jian Wu, Xiaolin Li, Yuelin Wang
    Abstract:

    This paper reports a novel Capacitive Accelerometer with highly symmetrical double-sided beam-mass structure. The highly symmetrical structure is fabricated from single wafer by a novel vertical sidewall protection technique. The good device performance i

Xiaolin Li - One of the best experts on this subject based on the ideXlab platform.

  • design and fabrication of a mems Capacitive Accelerometer with fully symmetrical double sided h shaped beam structure
    Microelectronic Engineering, 2015
    Co-Authors: Xiaofeng Zhou, Xiaolin Li, Shenglin Liang, Yuelin Wang
    Abstract:

    Display Omitted We design a MEMS Capacitive Accelerometer with fully symmetrical double-sided H-shaped beam.A simplified analytical model of the H-shaped beam-mass structure and numerical simulations are presented.The fabrication process flow of Accelerometer is presented in detail.Primary characterization of the Accelerometers is performed. This paper presents a MEMS Capacitive Accelerometer with fully symmetrical double-sided H-shaped beam structure. The fully symmetrical structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxide layer and device layer on both sides of a thick handle layer. A large proof mass with through wafer thickness (560µm) is fabricated in this process. Two layers of single crystal silicon H-shaped beams with highly controllable dimension suspend the proof mass from both sides. The resonance frequency of the Accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 106 and 2.24kHz, respectively. The Accelerometer with open loop interface circuit is calibrated on B&K Vibration Transducer Calibration System (Type 3629). The sensitivity of the device is 0.24V/g, and the nonlinearity is 0.29% over the range of 0-1g.

  • Design and fabrication of a micro-electromechanical system sandwich Capacitive Accelerometer
    The 9th IEEE International Conference on Nano Micro Engineered and Molecular Systems (NEMS), 2014
    Co-Authors: Xiaofeng Zhou, Jian Wu, Xiaolin Li, Yuelin Wang
    Abstract:

    This paper reports a micro-gravity MEMS sandwich Capacitive Accelerometer with symmetrical double-sided folded beam-mass structure. The beam-mass structure is fabricated from a single double-device-layer SOI wafer (D-SOI). The fabrication process produced proof mass with though wafer thickness (860μm) to enable formation of a larger proof mass. The suspension system of eight folded beams with highly controllable dimension suspends the proof mass from both sides. A sandwich differential Capacitive Accelerometer based on symmetrical double-sided folded beams-mass structure is fabricated by three-layer silicon/silicon wafer direct bonding. The resonance frequency of the developed device is measured in an open-loop system by a network analyzer. The quality factor and the resonant frequency are 18 and 830Hz, respectively. The Accelerometer has a closed-loop sensitivity of 1.8V/g and a nonlinearity of 0.52% over the range of 1g.

  • a novel sandwich Capacitive Accelerometer with a double sided 16 beam mass structure
    Microelectronic Engineering, 2014
    Co-Authors: Wei Li, Zhaohui Song, Xiaolin Li, Yuelin Wang
    Abstract:

    A novel sandwich Capacitive Accelerometer with a double-sided, 16-beam-mass structure is presented. In this design, the proof mass is supported by 16 tiny beams distributed uniformly on both sides, which aims to dramatically reduce the cross-axis response. Parameters of the beam-mass structure are analyzed and optimized by analytical modeling and the finite element analysis (FEA) method. The micro-Accelerometer is fabricated by bulk micromachining technology, and the proof mass and tiny beams are released by KOH anisotropic wet etching from both sides of the silicon wafer, simultaneously. The resonance frequency and the quality factor of the Accelerometer are 4.34kHz and 311, respectively, which are measured in an open-loop system. The measurement results show that the Accelerometer has a full-scale (FS) range of 30g, a close-loop sensitivity of 80mV/g, and a nonlinearity of 0.27% of FS. The cross-axis sensitivities are 0.353% (x/z axis) and 0.045% (y/z axis), respectively. The bias stability is 0.63mg for an hour. The Accelerometer can withstand high shock of over 10,000g.

  • a novel Capacitive Accelerometer with a highly symmetrical double sided beam mass structure
    Sensors and Actuators A-physical, 2012
    Co-Authors: Xiaofeng Zhou, Bin Xiong, Jian Wu, Xiaolin Li, Yuelin Wang
    Abstract:

    This paper reports a novel Capacitive Accelerometer with highly symmetrical double-sided beam-mass structure. The highly symmetrical structure is fabricated from single wafer by a novel vertical sidewall protection technique. The good device performance i