The Experts below are selected from a list of 23397 Experts worldwide ranked by ideXlab platform
H Ohno - One of the best experts on this subject based on the ideXlab platform.
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an effect of Capping Layer material on interfacial anisotropy and thermal stability factor of mgo cofeb ta cofeb mgo Capping Layer structure
Applied Physics Letters, 2018Co-Authors: Mathias Bersweiler, E C I Enobio, Shunsuke Fukami, Hideo Sato, H OhnoAbstract:We investigate the magnetic properties of a MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer (Ru or Ta) structure and properties of a magnetic tunnel junction with the structure as a free Layer. By using Ru instead of Ta as the Capping Layer, interfacial anisotropy Ki increases by a factor of ∼2 and a smaller damping constant is obtained. The increase in Ki results in an enhancement of the thermal stability factor of the free Layer with the Ru Capping Layer compared with that with the Ta Capping Layer in magnetic tunnel junctions.We investigate the magnetic properties of a MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer (Ru or Ta) structure and properties of a magnetic tunnel junction with the structure as a free Layer. By using Ru instead of Ta as the Capping Layer, interfacial anisotropy Ki increases by a factor of ∼2 and a smaller damping constant is obtained. The increase in Ki results in an enhancement of the thermal stability factor of the free Layer with the Ru Capping Layer compared with that with the Ta Capping Layer in magnetic tunnel junctions.
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An effect of Capping-Layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer structure
Applied Physics Letters, 2018Co-Authors: Mathias Bersweiler, E C I Enobio, Shunsuke Fukami, Hideo Sato, H OhnoAbstract:We investigate the magnetic properties of a MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer (Ru or Ta) structure and properties of a magnetic tunnel junction with the structure as a free Layer. By using Ru instead of Ta as the Capping Layer, interfacial anisotropy Ki increases by a factor of ∼2 and a smaller damping constant is obtained. The increase in Ki results in an enhancement of the thermal stability factor of the free Layer with the Ru Capping Layer compared with that with the Ta Capping Layer in magnetic tunnel junctions.We investigate the magnetic properties of a MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer (Ru or Ta) structure and properties of a magnetic tunnel junction with the structure as a free Layer. By using Ru instead of Ta as the Capping Layer, interfacial anisotropy Ki increases by a factor of ∼2 and a smaller damping constant is obtained. The increase in Ki results in an enhancement of the thermal stability factor of the free Layer with the Ru Capping Layer compared with that with the Ta Capping Layer in magnetic tunnel junctions.
Husam N Alshareef - One of the best experts on this subject based on the ideXlab platform.
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low temperature processed complementary metal oxide semiconductor cmos device by oxidation effect from Capping Layer
Scientific Reports, 2015Co-Authors: Zhenwei Wang, Hala Aljawhari, Pradipta K Nayak, J A Caraveofrescas, Nini Wei, Mohamed N Hedhili, Husam N AlshareefAbstract:In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel Layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide Capping Layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.
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effective work function modification of atomic Layer deposited tan film by Capping Layer
Applied Physics Letters, 2006Co-Authors: Kisik Choi, Husam N Alshareef, H C Wen, H R Harris, H Luan, Y Senzaki, P Lysaght, P MajhiAbstract:We demonstrate that the metallic Capping Layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-Layer-deposited (ALD)-TaN could be increased from 4.5to4.8eV with chemical-vapor-deposited-TiN Capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti Capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack.
P Majhi - One of the best experts on this subject based on the ideXlab platform.
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effective work function modification of atomic Layer deposited tan film by Capping Layer
Applied Physics Letters, 2006Co-Authors: Kisik Choi, Husam N Alshareef, H C Wen, H R Harris, H Luan, Y Senzaki, P Lysaght, P MajhiAbstract:We demonstrate that the metallic Capping Layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-Layer-deposited (ALD)-TaN could be increased from 4.5to4.8eV with chemical-vapor-deposited-TiN Capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti Capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack.
Dim-lee Kwong - One of the best experts on this subject based on the ideXlab platform.
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Improving gate-oxide reliability by TiN Capping Layer on NiSi FUSI metal gate
IEEE Electron Device Letters, 2005Co-Authors: Jun Liu, Huang-chun Wen, Dim-lee KwongAbstract:The impact of TiN Capping Layer on gate oxide reliability of NiSi fully silicided metal gate was investigated. It was found that the TiN Capping Layer significantly improved V/sub th/ stability and oxide reliability during negative bias temperature stress. Better life-time performance was also extrapolated for the samples with TiN Capping Layer.
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work function tuning of fully silicided nisi metal gates using a tin Capping Layer
IEEE Electron Device Letters, 2004Co-Authors: J H Sim, Huang-chun Wen, Dim-lee KwongAbstract:This paper investigates a new way of tuning the work function of fully silicided (FUSI) NiSi metal gates for dual-gate CMOS using a TiN Capping Layer on Ni to control the poly-Si dopant distribution during FUSI formation. In addition, by comparing the work function change of NiSi FUSI with and without TiN Capping, we provide clear evidence that dopants at the gate electrode and dielectric interface are responsible for the work function change. The TiN Capping Layer causes no degradation to the underlying gate dielectric in terms of fixed-oxide charge, gate leakage current, and time-dependent dielectric breakdown characteristics.
Mathias Bersweiler - One of the best experts on this subject based on the ideXlab platform.
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an effect of Capping Layer material on interfacial anisotropy and thermal stability factor of mgo cofeb ta cofeb mgo Capping Layer structure
Applied Physics Letters, 2018Co-Authors: Mathias Bersweiler, E C I Enobio, Shunsuke Fukami, Hideo Sato, H OhnoAbstract:We investigate the magnetic properties of a MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer (Ru or Ta) structure and properties of a magnetic tunnel junction with the structure as a free Layer. By using Ru instead of Ta as the Capping Layer, interfacial anisotropy Ki increases by a factor of ∼2 and a smaller damping constant is obtained. The increase in Ki results in an enhancement of the thermal stability factor of the free Layer with the Ru Capping Layer compared with that with the Ta Capping Layer in magnetic tunnel junctions.We investigate the magnetic properties of a MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer (Ru or Ta) structure and properties of a magnetic tunnel junction with the structure as a free Layer. By using Ru instead of Ta as the Capping Layer, interfacial anisotropy Ki increases by a factor of ∼2 and a smaller damping constant is obtained. The increase in Ki results in an enhancement of the thermal stability factor of the free Layer with the Ru Capping Layer compared with that with the Ta Capping Layer in magnetic tunnel junctions.
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An effect of Capping-Layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer structure
Applied Physics Letters, 2018Co-Authors: Mathias Bersweiler, E C I Enobio, Shunsuke Fukami, Hideo Sato, H OhnoAbstract:We investigate the magnetic properties of a MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer (Ru or Ta) structure and properties of a magnetic tunnel junction with the structure as a free Layer. By using Ru instead of Ta as the Capping Layer, interfacial anisotropy Ki increases by a factor of ∼2 and a smaller damping constant is obtained. The increase in Ki results in an enhancement of the thermal stability factor of the free Layer with the Ru Capping Layer compared with that with the Ta Capping Layer in magnetic tunnel junctions.We investigate the magnetic properties of a MgO/CoFeB/Ta/CoFeB/MgO/Capping-Layer (Ru or Ta) structure and properties of a magnetic tunnel junction with the structure as a free Layer. By using Ru instead of Ta as the Capping Layer, interfacial anisotropy Ki increases by a factor of ∼2 and a smaller damping constant is obtained. The increase in Ki results in an enhancement of the thermal stability factor of the free Layer with the Ru Capping Layer compared with that with the Ta Capping Layer in magnetic tunnel junctions.
