The Experts below are selected from a list of 300 Experts worldwide ranked by ideXlab platform
Wilhelm Warta - One of the best experts on this subject based on the ideXlab platform.
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Carrier Lifetime from Dynamic Electroluminescence
IEEE Journal of Photovoltaics, 2013Co-Authors: James A Giesecke, M. C. Schubert, Wilhelm WartaAbstract:In this paper, the injection-level-dependent measurement of the effective minority Carrier Lifetime of solar cells from dynamic time-modulated electroluminescence is introduced. The analogy between optical and electrical injection of excess Carriers is elaborated, the relevant specifications of the experimental setup are addressed, and an experimental proof of concept is given. Lifetime measurements over a very broad injection range are presented and found to agree well with dynamic photoluminescence measurements.
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minority Carrier Lifetime of silicon solar cells from quasi steady state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated.
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Minority Carrier Lifetime of silicon solar cells from quasi-steady-state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated. © 2011 Elsevier B.V. All rights reserved.
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minority Carrier Lifetime in silicon wafers from quasi steady state photoluminescence
Applied Physics Letters, 2010Co-Authors: James A Giesecke, M. C. Schubert, Dominic C Walter, Wilhelm WartaAbstract:Based on quasi-steady-state photoluminescence, we present an approach to extract minority Carrier Lifetime from silicon wafers without a priori information about any material parameter (e.g., dopant concentration or mobility). A sinusoidal oscillation of irradiation of a silicon sample in time stimulates a likewise oscillating excess Carrier density. Our approach is based on the fact that—in the quasi-steady-state regime—the time shift between the maxima of irradiation intensity and the intensity of radiative recombination is linked to effective minority Carrier Lifetime. Exploiting the continuity equation, it is possible to determine injection dependent minority Carrier Lifetime from there.
James A Giesecke - One of the best experts on this subject based on the ideXlab platform.
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Carrier Lifetime from Dynamic Electroluminescence
IEEE Journal of Photovoltaics, 2013Co-Authors: James A Giesecke, M. C. Schubert, Wilhelm WartaAbstract:In this paper, the injection-level-dependent measurement of the effective minority Carrier Lifetime of solar cells from dynamic time-modulated electroluminescence is introduced. The analogy between optical and electrical injection of excess Carriers is elaborated, the relevant specifications of the experimental setup are addressed, and an experimental proof of concept is given. Lifetime measurements over a very broad injection range are presented and found to agree well with dynamic photoluminescence measurements.
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minority Carrier Lifetime of silicon solar cells from quasi steady state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated.
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Minority Carrier Lifetime of silicon solar cells from quasi-steady-state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated. © 2011 Elsevier B.V. All rights reserved.
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minority Carrier Lifetime in silicon wafers from quasi steady state photoluminescence
Applied Physics Letters, 2010Co-Authors: James A Giesecke, M. C. Schubert, Dominic C Walter, Wilhelm WartaAbstract:Based on quasi-steady-state photoluminescence, we present an approach to extract minority Carrier Lifetime from silicon wafers without a priori information about any material parameter (e.g., dopant concentration or mobility). A sinusoidal oscillation of irradiation of a silicon sample in time stimulates a likewise oscillating excess Carrier density. Our approach is based on the fact that—in the quasi-steady-state regime—the time shift between the maxima of irradiation intensity and the intensity of radiative recombination is linked to effective minority Carrier Lifetime. Exploiting the continuity equation, it is possible to determine injection dependent minority Carrier Lifetime from there.
M. C. Schubert - One of the best experts on this subject based on the ideXlab platform.
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Carrier Lifetime from Dynamic Electroluminescence
IEEE Journal of Photovoltaics, 2013Co-Authors: James A Giesecke, M. C. Schubert, Wilhelm WartaAbstract:In this paper, the injection-level-dependent measurement of the effective minority Carrier Lifetime of solar cells from dynamic time-modulated electroluminescence is introduced. The analogy between optical and electrical injection of excess Carriers is elaborated, the relevant specifications of the experimental setup are addressed, and an experimental proof of concept is given. Lifetime measurements over a very broad injection range are presented and found to agree well with dynamic photoluminescence measurements.
-
minority Carrier Lifetime of silicon solar cells from quasi steady state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated.
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Minority Carrier Lifetime of silicon solar cells from quasi-steady-state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated. © 2011 Elsevier B.V. All rights reserved.
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minority Carrier Lifetime in silicon wafers from quasi steady state photoluminescence
Applied Physics Letters, 2010Co-Authors: James A Giesecke, M. C. Schubert, Dominic C Walter, Wilhelm WartaAbstract:Based on quasi-steady-state photoluminescence, we present an approach to extract minority Carrier Lifetime from silicon wafers without a priori information about any material parameter (e.g., dopant concentration or mobility). A sinusoidal oscillation of irradiation of a silicon sample in time stimulates a likewise oscillating excess Carrier density. Our approach is based on the fact that—in the quasi-steady-state regime—the time shift between the maxima of irradiation intensity and the intensity of radiative recombination is linked to effective minority Carrier Lifetime. Exploiting the continuity equation, it is possible to determine injection dependent minority Carrier Lifetime from there.
Bernhard Michl - One of the best experts on this subject based on the ideXlab platform.
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minority Carrier Lifetime of silicon solar cells from quasi steady state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated.
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Minority Carrier Lifetime of silicon solar cells from quasi-steady-state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated. © 2011 Elsevier B.V. All rights reserved.
F. Schindler - One of the best experts on this subject based on the ideXlab platform.
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minority Carrier Lifetime of silicon solar cells from quasi steady state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated.
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Minority Carrier Lifetime of silicon solar cells from quasi-steady-state photoluminescence
Solar Energy Materials and Solar Cells, 2011Co-Authors: James A Giesecke, Bernhard Michl, M. C. Schubert, F. Schindler, Wilhelm WartaAbstract:Minority Carrier Lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine Carrier Lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority Carrier Lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority Carrier Lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to Carrier Lifetimes in the range of a microsecond is provided, and a Lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective Carrier Lifetime and the corresponding open circuit voltage of a solar cell is demonstrated. © 2011 Elsevier B.V. All rights reserved.