The Experts below are selected from a list of 318 Experts worldwide ranked by ideXlab platform
Hiroshi Koezuka - One of the best experts on this subject based on the ideXlab platform.
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Polythienylenevinylene thin‐film transistor with high Carrier Mobility
Applied Physics Letters, 1993Co-Authors: H. Fuchigami, A. Tsumura, Hiroshi KoezukaAbstract:A thin‐film transistor (TFT) with high Carrier Mobility has been fabricated using precursor‐route poly(2,5‐thienylenevinylene) (PTV) as semiconductor. The Carrier Mobility has been determined to be 0.22 cm2/V s, which is in the same level of that of amorphous silicon TFT. It has also been made clear that the Carrier Mobility is linearly proportional to the conversion ratio from the insulated precursor polymer to π‐conjugated PTV. The π‐conjugation length is crucial to obtain high Carrier Mobility in π‐conjugated polymer TFT.
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polythienylenevinylene thin film transistor with high Carrier Mobility
Applied Physics Letters, 1993Co-Authors: H. Fuchigami, A. Tsumura, Hiroshi KoezukaAbstract:A thin‐film transistor (TFT) with high Carrier Mobility has been fabricated using precursor‐route poly(2,5‐thienylenevinylene) (PTV) as semiconductor. The Carrier Mobility has been determined to be 0.22 cm2/V s, which is in the same level of that of amorphous silicon TFT. It has also been made clear that the Carrier Mobility is linearly proportional to the conversion ratio from the insulated precursor polymer to π‐conjugated PTV. The π‐conjugation length is crucial to obtain high Carrier Mobility in π‐conjugated polymer TFT.
H. Fuchigami - One of the best experts on this subject based on the ideXlab platform.
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Polythienylenevinylene thin‐film transistor with high Carrier Mobility
Applied Physics Letters, 1993Co-Authors: H. Fuchigami, A. Tsumura, Hiroshi KoezukaAbstract:A thin‐film transistor (TFT) with high Carrier Mobility has been fabricated using precursor‐route poly(2,5‐thienylenevinylene) (PTV) as semiconductor. The Carrier Mobility has been determined to be 0.22 cm2/V s, which is in the same level of that of amorphous silicon TFT. It has also been made clear that the Carrier Mobility is linearly proportional to the conversion ratio from the insulated precursor polymer to π‐conjugated PTV. The π‐conjugation length is crucial to obtain high Carrier Mobility in π‐conjugated polymer TFT.
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polythienylenevinylene thin film transistor with high Carrier Mobility
Applied Physics Letters, 1993Co-Authors: H. Fuchigami, A. Tsumura, Hiroshi KoezukaAbstract:A thin‐film transistor (TFT) with high Carrier Mobility has been fabricated using precursor‐route poly(2,5‐thienylenevinylene) (PTV) as semiconductor. The Carrier Mobility has been determined to be 0.22 cm2/V s, which is in the same level of that of amorphous silicon TFT. It has also been made clear that the Carrier Mobility is linearly proportional to the conversion ratio from the insulated precursor polymer to π‐conjugated PTV. The π‐conjugation length is crucial to obtain high Carrier Mobility in π‐conjugated polymer TFT.
Emanuel Tutuc - One of the best experts on this subject based on the ideXlab platform.
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dielectric thickness dependence of Carrier Mobility in graphene with hfo2 top dielectric
arXiv: Mesoscale and Nanoscale Physics, 2010Co-Authors: Babak Fallahazad, Seyoung Kim, Luigi Colombo, Emanuel TutucAbstract:We investigate the Carrier Mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the Carrier Mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The Carrier Mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the Carrier Mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the Mobility degradation.
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Dielectric thickness dependence of Carrier Mobility in graphene with HfO2 top dielectric
Applied Physics Letters, 2010Co-Authors: Babak Fallahazad, Seyoung Kim, Luigi Colombo, Emanuel TutucAbstract:We investigate the Carrier Mobility in monolayer and bilayer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the Carrier Mobility decreases during the deposition of the first 2–4 nm of top dielectric and remains constant for thicker layers. The Carrier Mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the Carrier Mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the Mobility degradation.
Iain Mcculloch - One of the best experts on this subject based on the ideXlab platform.
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high Carrier Mobility polythiophene thin films structure determination by experiment and theory
Advanced Materials, 2007Co-Authors: Dean M Delongchamp, Iain Mcculloch, Martin Heeney, Regis J Kline, Eric K Lin, Daniel A Fischer, Lee J Richter, Leah A Lucas, John E NorthrupAbstract:The structure within crystalline thin films of a high-Carrier-Mobility polythiophene is studied with complementary characterization methods and first-principles theory. As shown in the figure, two important structural aspects are revealed: (1) a slip in the face-to-face pi-pi packing, which strongly influences Carrier Mobility, and (2) the interdigitation of highly trans side chains between vertically adjacent lamellae.
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significant dependence of morphology and charge Carrier Mobility on substrate surface chemistry in high performance polythiophene semiconductor films
Applied Physics Letters, 2007Co-Authors: Joseph R Kline, Iain Mcculloch, Martin Heeney, Dean M Delongchamp, Eric K Lin, Daniel A Fischer, Michael F ToneyAbstract:The authors report a significant dependence of the morphology and charge Carrier Mobility of poly(2,5-bis(3-dodecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT) films on the substrate surface chemistry upon heating into its liquid crystal phase. In contrast with films on bare silicon oxide surfaces, pBTTT films on oxide functionalized with octyltrichlorosilane exhibit substantial increases in the lateral dimensions of molecular terraces from nanometers to micrometers, increased orientational order, and higher charge Carrier Mobility. The large-scale crystallinity of this polymer plays an important role in the high Carrier Mobility observed in devices, but renders it more sensitive to substrate surface chemistry than other conjugated polymers.
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liquid crystalline semiconducting polymers with high charge Carrier Mobility
Nature Materials, 2006Co-Authors: Iain Mcculloch, Kristijonas Genevičius, Martin Heeney, Clare Bailey, Iain Macdonald, Maxim Shkunov, David Sparrowe, Steve Tierney, Robert Wagner, Weimin ZhangAbstract:Organic semiconductors that can be fabricated by simple processing techniques and possess excellent electrical performance, are key requirements in the progress of organic electronics. Both high semiconductor charge-Carrier Mobility, optimized through understanding and control of the semiconductor microstructure, and stability of the semiconductor to ambient electrochemical oxidative processes are required. We report on new semiconducting liquid-crystalline thieno[3,2-b ]thiophene polymers, the enhancement in charge-Carrier Mobility achieved through highly organized morphology from processing in the mesophase, and the effects of exposure to both ambient and low-humidity air on the performance of transistor devices. Relatively large crystalline domain sizes on the length scale of lithographically accessible channel lengths (∼200 nm) were exhibited in thin films, thus offering the potential for fabrication of single-crystal polymer transistors. Good transistor stability under static storage and operation in a low-humidity air environment was demonstrated, with charge-Carrier field-effect mobilities of 0.2–0.6 cm2 V−1 s−1 achieved under nitrogen.
Martin Heeney - One of the best experts on this subject based on the ideXlab platform.
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high Carrier Mobility polythiophene thin films structure determination by experiment and theory
Advanced Materials, 2007Co-Authors: Dean M Delongchamp, Iain Mcculloch, Martin Heeney, Regis J Kline, Eric K Lin, Daniel A Fischer, Lee J Richter, Leah A Lucas, John E NorthrupAbstract:The structure within crystalline thin films of a high-Carrier-Mobility polythiophene is studied with complementary characterization methods and first-principles theory. As shown in the figure, two important structural aspects are revealed: (1) a slip in the face-to-face pi-pi packing, which strongly influences Carrier Mobility, and (2) the interdigitation of highly trans side chains between vertically adjacent lamellae.
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significant dependence of morphology and charge Carrier Mobility on substrate surface chemistry in high performance polythiophene semiconductor films
Applied Physics Letters, 2007Co-Authors: Joseph R Kline, Iain Mcculloch, Martin Heeney, Dean M Delongchamp, Eric K Lin, Daniel A Fischer, Michael F ToneyAbstract:The authors report a significant dependence of the morphology and charge Carrier Mobility of poly(2,5-bis(3-dodecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT) films on the substrate surface chemistry upon heating into its liquid crystal phase. In contrast with films on bare silicon oxide surfaces, pBTTT films on oxide functionalized with octyltrichlorosilane exhibit substantial increases in the lateral dimensions of molecular terraces from nanometers to micrometers, increased orientational order, and higher charge Carrier Mobility. The large-scale crystallinity of this polymer plays an important role in the high Carrier Mobility observed in devices, but renders it more sensitive to substrate surface chemistry than other conjugated polymers.
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liquid crystalline semiconducting polymers with high charge Carrier Mobility
Nature Materials, 2006Co-Authors: Iain Mcculloch, Kristijonas Genevičius, Martin Heeney, Clare Bailey, Iain Macdonald, Maxim Shkunov, David Sparrowe, Steve Tierney, Robert Wagner, Weimin ZhangAbstract:Organic semiconductors that can be fabricated by simple processing techniques and possess excellent electrical performance, are key requirements in the progress of organic electronics. Both high semiconductor charge-Carrier Mobility, optimized through understanding and control of the semiconductor microstructure, and stability of the semiconductor to ambient electrochemical oxidative processes are required. We report on new semiconducting liquid-crystalline thieno[3,2-b ]thiophene polymers, the enhancement in charge-Carrier Mobility achieved through highly organized morphology from processing in the mesophase, and the effects of exposure to both ambient and low-humidity air on the performance of transistor devices. Relatively large crystalline domain sizes on the length scale of lithographically accessible channel lengths (∼200 nm) were exhibited in thin films, thus offering the potential for fabrication of single-crystal polymer transistors. Good transistor stability under static storage and operation in a low-humidity air environment was demonstrated, with charge-Carrier field-effect mobilities of 0.2–0.6 cm2 V−1 s−1 achieved under nitrogen.