The Experts below are selected from a list of 318 Experts worldwide ranked by ideXlab platform
Bernd Rech - One of the best experts on this subject based on the ideXlab platform.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, M. Lozac’h, J. Hüpkes, Michael Wimmer, Katrin Lips, Masashi Sumiya, Bernd Rech, S. Ueda, H. Yoshikawa, Mihaela Gorgoi, K. Kobayashi, Marcus BärAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, Michael Wimmer, Katrin Lips, S. Ueda, H. Yoshikawa, M. Lozac’h, Bernd RechAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
D. Gerlach - One of the best experts on this subject based on the ideXlab platform.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, M. Lozac’h, J. Hüpkes, Michael Wimmer, Katrin Lips, Masashi Sumiya, Bernd Rech, S. Ueda, H. Yoshikawa, Mihaela Gorgoi, K. Kobayashi, Marcus BärAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, Michael Wimmer, Katrin Lips, S. Ueda, H. Yoshikawa, M. Lozac’h, Bernd RechAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
Marcus Bär - One of the best experts on this subject based on the ideXlab platform.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, M. Lozac’h, J. Hüpkes, Michael Wimmer, Katrin Lips, Masashi Sumiya, Bernd Rech, S. Ueda, H. Yoshikawa, Mihaela Gorgoi, K. Kobayashi, Marcus BärAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
S. Ueda - One of the best experts on this subject based on the ideXlab platform.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, M. Lozac’h, J. Hüpkes, Michael Wimmer, Katrin Lips, Masashi Sumiya, Bernd Rech, S. Ueda, H. Yoshikawa, Mihaela Gorgoi, K. Kobayashi, Marcus BärAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, Michael Wimmer, Katrin Lips, S. Ueda, H. Yoshikawa, M. Lozac’h, Bernd RechAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
Roberto Félix - One of the best experts on this subject based on the ideXlab platform.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, M. Lozac’h, J. Hüpkes, Michael Wimmer, Katrin Lips, Masashi Sumiya, Bernd Rech, S. Ueda, H. Yoshikawa, Mihaela Gorgoi, K. Kobayashi, Marcus BärAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
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p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study
IEEE Journal of Photovoltaics, 2013Co-Authors: D. Gerlach, Roberto Félix, R. G. Wilks, D. Wippler, Michael Wimmer, Katrin Lips, S. Ueda, H. Yoshikawa, M. Lozac’h, Bernd RechAbstract:The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar Cell Structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
