Zinc Oxide

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S.j. Chua - One of the best experts on this subject based on the ideXlab platform.

  • Photoluminescent properties of copper-doped Zinc Oxide nanowires
    Nanotechnology, 2004
    Co-Authors: C.x. Xu, L. Ke, X. W. Sun, X H Zhang, S.j. Chua
    Abstract:

    Copper-doped Zinc Oxide nanowires were fabricated on copper-coated silicon substrate by sintering a mixture of Zinc Oxide and graphite powders at high temperature. Copper functioned as a catalyst in the Zinc Oxide nanowire growth and was incorporated during the growth as a dopant. The size of copper-doped Zinc Oxide nanowires ranges from 30 to 100 nm in diameter and tens to hundreds of microns in length. The photoluminescent excitation spectra showed multiple absorption peaks in the ultraviolet and blue/green region. Correspondingly, broad and continuous photoluminescence spectra were observed extending from the ultraviolet to the red region with shoulder peaks at room temperature, which is different from that of the bulk. The x-ray photoelectron spectroscopy and low temperature photoluminescence were employed to analyse the luminescent mechanism.

C.x. Xu - One of the best experts on this subject based on the ideXlab platform.

  • Photoluminescent properties of copper-doped Zinc Oxide nanowires
    Nanotechnology, 2004
    Co-Authors: C.x. Xu, L. Ke, X. W. Sun, X H Zhang, S.j. Chua
    Abstract:

    Copper-doped Zinc Oxide nanowires were fabricated on copper-coated silicon substrate by sintering a mixture of Zinc Oxide and graphite powders at high temperature. Copper functioned as a catalyst in the Zinc Oxide nanowire growth and was incorporated during the growth as a dopant. The size of copper-doped Zinc Oxide nanowires ranges from 30 to 100 nm in diameter and tens to hundreds of microns in length. The photoluminescent excitation spectra showed multiple absorption peaks in the ultraviolet and blue/green region. Correspondingly, broad and continuous photoluminescence spectra were observed extending from the ultraviolet to the red region with shoulder peaks at room temperature, which is different from that of the bulk. The x-ray photoelectron spectroscopy and low temperature photoluminescence were employed to analyse the luminescent mechanism.

M Miyazaki - One of the best experts on this subject based on the ideXlab platform.

  • durability of doped Zinc Oxide silver doped Zinc Oxide low emissivity coatings in humid environment
    Thin Solid Films, 2008
    Co-Authors: Eiichi Ando, M Miyazaki
    Abstract:

    Abstract The relationship between internal stress of doped Zinc Oxide films and durability of doped Zinc Oxide/silver/doped Zinc Oxide low emissivity (low-e) coatings in humid environment was investigated. Aluminum, titanium, tin, chromium, silicon, gallium, magnesium, boron, barium, and calcium were chosen as a doping element in sputtering targets. Ratios of dopant/Zinc in the Oxide targets were 4/96–5/95 at.%. Films were formed by radio frequency sputtering. Doping of barium and calcium to the Zinc Oxide film led to a large increase in the internal stress. Doping of the other elements resulted in decreasing the internal stress. It was concluded that durability of the low-e coatings in humid environment closely correlated with the internal stress of the Oxide layers.

  • Durability of doped Zinc Oxide/silver/doped Zinc Oxide low emissivity coatings in humid environment
    Thin Solid Films, 2008
    Co-Authors: Eiichi Ando, M Miyazaki
    Abstract:

    Abstract The relationship between internal stress of doped Zinc Oxide films and durability of doped Zinc Oxide/silver/doped Zinc Oxide low emissivity (low-e) coatings in humid environment was investigated. Aluminum, titanium, tin, chromium, silicon, gallium, magnesium, boron, barium, and calcium were chosen as a doping element in sputtering targets. Ratios of dopant/Zinc in the Oxide targets were 4/96–5/95 at.%. Films were formed by radio frequency sputtering. Doping of barium and calcium to the Zinc Oxide film led to a large increase in the internal stress. Doping of the other elements resulted in decreasing the internal stress. It was concluded that durability of the low-e coatings in humid environment closely correlated with the internal stress of the Oxide layers.

E.o.b. Ajayi - One of the best experts on this subject based on the ideXlab platform.

  • Preparation and characterization of undoped Zinc Oxide and uranium doped Zinc Oxide thin films
    Optical Materials, 2002
    Co-Authors: M.a. Eleruja, A.v. Adedeji, G.o. Egharevba, J.n. Lambi, M.s. Akanni, Chris Jeynes, E.o.b. Ajayi
    Abstract:

    Doped and undoped Zinc Oxide thin films were deposited by metallorganic chemical vapour deposition technique, which has been reported previously. The undoped Zinc Oxide thin films were deposited from the pyrolysis of Zinc acetate while those of uranium-doped Zinc Oxide were deposited from uranyl Zinc acetate. The scanning electron microscope micrograph shows that the ZnO thin film has polycrystalline structure. The band gaps of the undoped ZnO and uranium doped ZnO thin films were determined using optical technique and found to be 3.24 and 3.16 eV respectively.

L. Ke - One of the best experts on this subject based on the ideXlab platform.

  • Photoluminescent properties of copper-doped Zinc Oxide nanowires
    Nanotechnology, 2004
    Co-Authors: C.x. Xu, L. Ke, X. W. Sun, X H Zhang, S.j. Chua
    Abstract:

    Copper-doped Zinc Oxide nanowires were fabricated on copper-coated silicon substrate by sintering a mixture of Zinc Oxide and graphite powders at high temperature. Copper functioned as a catalyst in the Zinc Oxide nanowire growth and was incorporated during the growth as a dopant. The size of copper-doped Zinc Oxide nanowires ranges from 30 to 100 nm in diameter and tens to hundreds of microns in length. The photoluminescent excitation spectra showed multiple absorption peaks in the ultraviolet and blue/green region. Correspondingly, broad and continuous photoluminescence spectra were observed extending from the ultraviolet to the red region with shoulder peaks at room temperature, which is different from that of the bulk. The x-ray photoelectron spectroscopy and low temperature photoluminescence were employed to analyse the luminescent mechanism.