The Experts below are selected from a list of 315 Experts worldwide ranked by ideXlab platform

Seokmin Hwang - One of the best experts on this subject based on the ideXlab platform.

  • quantitative extraction of temperature dependent barrier height and Channel Resistance of a sizo omo and a sizo izo thin film transistors
    IEEE Electron Device Letters, 2013
    Co-Authors: Byoung Hak Hong, Seokmin Hwang
    Abstract:

    Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as Channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the Channel Resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO Channel material was consistent with the variable range hopping conduction mechanism.

  • Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
    IEEE Electron Device Letters, 2013
    Co-Authors: Keun Heo, Sang Yeol Lee, Byoung Hak Hong, Eun-ok Lee, Sangsig Kim, Seokmin Hwang
    Abstract:

    Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as Channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the Channel Resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO Channel material was consistent with the variable range hopping conduction mechanism.

Byoung Hak Hong - One of the best experts on this subject based on the ideXlab platform.

  • quantitative extraction of temperature dependent barrier height and Channel Resistance of a sizo omo and a sizo izo thin film transistors
    IEEE Electron Device Letters, 2013
    Co-Authors: Byoung Hak Hong, Seokmin Hwang
    Abstract:

    Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as Channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the Channel Resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO Channel material was consistent with the variable range hopping conduction mechanism.

  • Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
    IEEE Electron Device Letters, 2013
    Co-Authors: Keun Heo, Sang Yeol Lee, Byoung Hak Hong, Eun-ok Lee, Sangsig Kim, Seokmin Hwang
    Abstract:

    Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as Channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the Channel Resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO Channel material was consistent with the variable range hopping conduction mechanism.

Vernon Cooray - One of the best experts on this subject based on the ideXlab platform.

  • A comparison of different approaches to simulate a nonlinear Channel Resistance in lightning return stroke models
    Journal of Geophysical Research, 2008
    Co-Authors: Alberto De Conti, Nelson Theethayi, Silverio Visacro, Vernon Cooray
    Abstract:

    [1] Different physical models that describe the time variation of the Channel Resistance are investigated in a lightning return stroke model. Such models consider one of the three following hypotheses: (1) the Channel Resistance decays exponentially with time; (2) the Channel Resistance decays with the radial expansion of the Channel core, which is assumed to be described by the strong-shock approximation, or (3) the Channel Resistance varies with time according to three different arc Resistance models (defined by Toepler, Barannik and Kushner et al.). Analyses illustrate the effect of a time-varying Channel Resistance on Channel currents and corresponding electromagnetic fields. It is shown that the strong-shock approximation is able to predict typical features of experimentally observed lightning electromagnetic fields and return stroke speed profiles. It is also shown that results predicted by the strong-shock approximation can be qualitatively reproduced by either using simplified arc Resistance equations (such as Toepler's and Barannik's ones) or considering an exponential decay of the Channel Resistance with attenuation constants linearly increasing with height.

  • Simulation of the time-varying Channel Resistance : exponential decay versus strong-shock approximation
    2008
    Co-Authors: A. De Conti, Silverio Visacro, Nelson Theethayi, Vernon Cooray
    Abstract:

    Simulation of the time-varying Channel Resistance : exponential decay versus strong-shock approximation

  • On the representation of the lightning return stroke process as a current pulse propagating along a transmission line
    IEEE Transactions on Power Delivery, 2005
    Co-Authors: Nelson Theethayi, Vernon Cooray
    Abstract:

    Assuming that the representation of the lightning return stroke as a current pulse propagating along a transmission line is valid, the effects of different transmission line parameters both on the Channel current and the electromagnetic fields are investigated. The transmission line parameters that are incorporated into the study are the spatial variation of the inductance and the capacitance, the Channel Resistance and its temporal variation and the finite conductance of the line. The results show that the introduction of the time varying Channel Resistance and the finite conductance will change the predictions of the model in such a direction that they will come closer to the experimental observations.

  • Transmission line model - an idealisation or reality
    2003 IEEE Bologna Power Tech Conference Proceedings, 1
    Co-Authors: Nelson Theethayi, Vernon Cooray
    Abstract:

    Assuming that the representation of the lightning return stroke as a current pulse propagating along a transmission line is valid, the effects of different transmission line parameters on the remote electric fields are investigated. The transmission line parameters that are incorporated into the study are the spatial variation of Channel inductance and capacitance, Channel Resistance and its temporal variation, and the finite conductance of the Channel. The results show that the introduction of the time varying Channel Resistance and the finite conductance will change the predictions of the model in such a direction that they will come closer to experimental observations.

Keun Heo - One of the best experts on this subject based on the ideXlab platform.

  • Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
    IEEE Electron Device Letters, 2013
    Co-Authors: Keun Heo, Sang Yeol Lee, Byoung Hak Hong, Eun-ok Lee, Sangsig Kim, Seokmin Hwang
    Abstract:

    Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as Channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the Channel Resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO Channel material was consistent with the variable range hopping conduction mechanism.

Sang Yeol Lee - One of the best experts on this subject based on the ideXlab platform.

  • Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
    IEEE Electron Device Letters, 2013
    Co-Authors: Keun Heo, Sang Yeol Lee, Byoung Hak Hong, Eun-ok Lee, Sangsig Kim, Seokmin Hwang
    Abstract:

    Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as Channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the Channel Resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO Channel material was consistent with the variable range hopping conduction mechanism.

  • Reduction of Channel Resistance in amorphous oxide thin-film transistors with buried layer
    IOP Conference Series: Materials Science and Engineering, 2012
    Co-Authors: Eugene Chong, Bosul Kim, Sang Yeol Lee
    Abstract:

    A silicon-indium-zinc-oxide (SIZO) thin film transistor (TFT) with low Channel-Resistance (RCH) indium-zinc-oxide (In2O3:ZnO = 9:1) buried layer annealed at low temperature of 200°C exhibited high field-effect mobility (μFE) over 55.8 cm2/V·s which is 5 times higher than that of the conventional TFTs due to small threshold voltage (Vth) change of 1.8 V under bias-temperature stress (BTS) condition for 420 minutes. The low-RCH buried-layer allows more strong current-path formed in Channel layer well within relatively high-RCH Channel-layer since it is less affected by the Channel bulk and/or back interface trap with high carrier concentration.