The Experts below are selected from a list of 24552 Experts worldwide ranked by ideXlab platform
M Meyyappan - One of the best experts on this subject based on the ideXlab platform.
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nanoscale vacuum Channel Transistor
Nano Letters, 2017Co-Authors: Jin-woo Han, Dongil Moon, M MeyyappanAbstract:Vacuum tubes that sparked the electronics era had given way to semiconductor Transistors. Despite their faster operation and better immunity to noise and radiation compared to the Transistors, the vacuum device technology became extinct due to the high power consumption, integration difficulties, and short lifetime of the vacuum tubes. We combine the best of vacuum tubes and modern silicon nanofabrication technology here. The surround gate nanoscale vacuum Channel Transistor consists of sharp source and drain electrodes separated by sub-50 nm vacuum Channel with a source to gate distance of 10 nm. This Transistor performs at a low voltage ( 3 microamperes). The nanoscale vacuum Channel Transistor can be a possible alternative to semiconductor Transistors beyond Moore’s law.
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vacuum nanoelectronics back to the future gate insulated nanoscale vacuum Channel Transistor
Applied Physics Letters, 2012Co-Authors: Jin-woo Han, M MeyyappanAbstract:A gate-insulated vacuum Channel Transistor was fabricated using standard silicon semiconductor processing. Advantages of the vacuum tube and Transistor are combined here by nanofabrication. A photoresist ashing technique enabled the nanogap separation of the emitter and the collector, thus allowing operation at less than 10 V. A cut-off frequency fT of 0.46 THz has been obtained. The nanoscale vacuum tubes can provide high frequency/power output while satisfying the metrics of lightness, cost, lifetime, and stability at harsh conditions, and the operation voltage can be decreased comparable to the modern semiconductor devices.
Jin-woo Han - One of the best experts on this subject based on the ideXlab platform.
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nanoscale vacuum Channel Transistor
Nano Letters, 2017Co-Authors: Jin-woo Han, Dongil Moon, M MeyyappanAbstract:Vacuum tubes that sparked the electronics era had given way to semiconductor Transistors. Despite their faster operation and better immunity to noise and radiation compared to the Transistors, the vacuum device technology became extinct due to the high power consumption, integration difficulties, and short lifetime of the vacuum tubes. We combine the best of vacuum tubes and modern silicon nanofabrication technology here. The surround gate nanoscale vacuum Channel Transistor consists of sharp source and drain electrodes separated by sub-50 nm vacuum Channel with a source to gate distance of 10 nm. This Transistor performs at a low voltage ( 3 microamperes). The nanoscale vacuum Channel Transistor can be a possible alternative to semiconductor Transistors beyond Moore’s law.
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FinFACT—Fin Flip-Flop Actuated Channel Transistor
2016Co-Authors: Jin-woo Han, Jae-hyuk Ahn, Yang-kyu ChoiAbstract:for a complementary metal–oxide–semiconductor device to pro-vide a novel function. Based on an independently controlled double-gate FinFET, the fin of the proposed Transistor is sus-pended by replacing the solid-state gate dielectric with a gas-state gate dielectric, which enables flip-flop actuation of the fin. Flip-flop actuation of the fin is accomplished via electrostatic force from two separated gates, representing a binary mechanical state of the fin. It is anticipated that the virtues of the reported device can be exploited in transformable circuit units and digital memory Transistors. Index Terms—Complementary metal–oxide–semiconductor, Fin Flip-flop Actuated Channel Transistor (FinFACT), indepen-dently controlled double-gate FinFET, nanoelectromechanical system (NEMS). I
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vacuum nanoelectronics back to the future gate insulated nanoscale vacuum Channel Transistor
Applied Physics Letters, 2012Co-Authors: Jin-woo Han, M MeyyappanAbstract:A gate-insulated vacuum Channel Transistor was fabricated using standard silicon semiconductor processing. Advantages of the vacuum tube and Transistor are combined here by nanofabrication. A photoresist ashing technique enabled the nanogap separation of the emitter and the collector, thus allowing operation at less than 10 V. A cut-off frequency fT of 0.46 THz has been obtained. The nanoscale vacuum tubes can provide high frequency/power output while satisfying the metrics of lightness, cost, lifetime, and stability at harsh conditions, and the operation voltage can be decreased comparable to the modern semiconductor devices.
Kentaro Kyuno - One of the best experts on this subject based on the ideXlab platform.
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low temperature 330 c crystallization and dopant activation of ge thin films via agsb induced layer exchange operation of an n Channel polycrystalline ge thin film Transistor
Applied Physics Express, 2017Co-Authors: Tatsuya Suzuki, Benedict Mutunga Joseph, Misato Fukai, Masao Kamiko, Kentaro KyunoAbstract:Ge thin films have been prepared by layer-exchange metal-induced crystallization using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into the crystalline Ge layer and their activation have been realized during the process at a temperature as low as 330 °C. Thin-film Transistors have been fabricated using the Ge thin films as Channel layers and the operation of an n-Channel Transistor with an on/off ratio of over 300 has been demonstrated.
Tatsuya Suzuki - One of the best experts on this subject based on the ideXlab platform.
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low temperature 330 c crystallization and dopant activation of ge thin films via agsb induced layer exchange operation of an n Channel polycrystalline ge thin film Transistor
Applied Physics Express, 2017Co-Authors: Tatsuya Suzuki, Benedict Mutunga Joseph, Misato Fukai, Masao Kamiko, Kentaro KyunoAbstract:Ge thin films have been prepared by layer-exchange metal-induced crystallization using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into the crystalline Ge layer and their activation have been realized during the process at a temperature as low as 330 °C. Thin-film Transistors have been fabricated using the Ge thin films as Channel layers and the operation of an n-Channel Transistor with an on/off ratio of over 300 has been demonstrated.
Jae Young Choi - One of the best experts on this subject based on the ideXlab platform.
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High-mobility and low-power thin-film Transistors based on multilayer MoS2 crystals
Nature Communications, 2012Co-Authors: Sunkook Kim, Jaehyun Yang, Changhoon Jung, Jiyoul Lee, Ji Beom Yoo, Aniruddha Konar, Jong-hak Lee, Wan Sik Hwang, Hyoungsub Kim, Jae Young ChoiAbstract:Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect Transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect Transistors to demonstrate a compelling case for their applications in thin-film Transistors. Our multilayer molybdenum disulphide field-effect Transistors exhibited high mobilities (>100 cm(2) V(-1) s(-1)), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on Shockley's long-Channel Transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.