The Experts below are selected from a list of 3 Experts worldwide ranked by ideXlab platform

N Holonyak - One of the best experts on this subject based on the ideXlab platform.

  • relative intensity noise of a quantum well transistor laser
    Applied Physics Letters, 2012
    Co-Authors: Fei Tan, Rohan Bambery, Milton Feng, N Holonyak
    Abstract:

    A quantum well transistor laser with a base cavity length L = 300 μm has been designed, fabricated, and operated at threshold ITH = 25 mA (0 °C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transistor laser is able to achieve nearly a quantum shot-noise limited laser relative intensity noise (RIN) with a peak amplitude of −151 dB/Hz at frequency 8.6 GHz. Compared with a diode laser (a Charge storage Device) at the same output power, the transistor laser (a Charge Flow Device) has a better than 28 dB (number dependent on the laser Device design) peak RIN advantage.

Fei Tan - One of the best experts on this subject based on the ideXlab platform.

  • relative intensity noise of a quantum well transistor laser
    Applied Physics Letters, 2012
    Co-Authors: Fei Tan, Rohan Bambery, Milton Feng, N Holonyak
    Abstract:

    A quantum well transistor laser with a base cavity length L = 300 μm has been designed, fabricated, and operated at threshold ITH = 25 mA (0 °C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transistor laser is able to achieve nearly a quantum shot-noise limited laser relative intensity noise (RIN) with a peak amplitude of −151 dB/Hz at frequency 8.6 GHz. Compared with a diode laser (a Charge storage Device) at the same output power, the transistor laser (a Charge Flow Device) has a better than 28 dB (number dependent on the laser Device design) peak RIN advantage.

Rohan Bambery - One of the best experts on this subject based on the ideXlab platform.

  • relative intensity noise of a quantum well transistor laser
    Applied Physics Letters, 2012
    Co-Authors: Fei Tan, Rohan Bambery, Milton Feng, N Holonyak
    Abstract:

    A quantum well transistor laser with a base cavity length L = 300 μm has been designed, fabricated, and operated at threshold ITH = 25 mA (0 °C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transistor laser is able to achieve nearly a quantum shot-noise limited laser relative intensity noise (RIN) with a peak amplitude of −151 dB/Hz at frequency 8.6 GHz. Compared with a diode laser (a Charge storage Device) at the same output power, the transistor laser (a Charge Flow Device) has a better than 28 dB (number dependent on the laser Device design) peak RIN advantage.

Milton Feng - One of the best experts on this subject based on the ideXlab platform.

  • relative intensity noise of a quantum well transistor laser
    Applied Physics Letters, 2012
    Co-Authors: Fei Tan, Rohan Bambery, Milton Feng, N Holonyak
    Abstract:

    A quantum well transistor laser with a base cavity length L = 300 μm has been designed, fabricated, and operated at threshold ITH = 25 mA (0 °C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transistor laser is able to achieve nearly a quantum shot-noise limited laser relative intensity noise (RIN) with a peak amplitude of −151 dB/Hz at frequency 8.6 GHz. Compared with a diode laser (a Charge storage Device) at the same output power, the transistor laser (a Charge Flow Device) has a better than 28 dB (number dependent on the laser Device design) peak RIN advantage.