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C D Lokhande - One of the best experts on this subject based on the ideXlab platform.
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Chemical Deposition method for metal chalcogenide thin films
Materials Chemistry and Physics, 2000Co-Authors: Rajaram S Mane, C D LokhandeAbstract:Abstract Metal chalcogenide thin films preparation by Chemical methods are currently attracting considerable attention as it is relatively inexpensive, simple and convenient for large area Deposition. A variety of substrates such as insulators, semiconductors or metals can be used since these are low temperature processes which avoid oxidation and corrosion of substrate. These are slow processes which facilitates better orientation of crystallites with improved grain structure. Depending upon Deposition conditions, film growth can take place by ion-by-ion condensation of the materials on the substrates or by adsorption of colloidal particles from the solution on the substrate. Using these methods, thin films of group II–VI, V–VI, III–VI etc. have been deposited. Solar selective coatings, solar control, photoconductors, solid state and photoelectroChemical solar cells, optical imaging, hologram recording, optical mass memories etc. are some of the applications of metal chalcogenide films. In the present review article, we have described in detail, Chemical bath Deposition method of metal chalcogenide thin films, it is capable of yielding good quality thin films. Their preparative parameters, structural, optical, electrical properties etc. are described. Theoretical background necessary for the Chemical Deposition of thin films is also discussed.
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Chemical Deposition of bi2s3 thin films from thioacetamide bath
Materials Chemistry and Physics, 1995Co-Authors: J D Desai, C D LokhandeAbstract:Abstract Bi 2 S 3 thin films have been deposited from an aqueous acidic bath using thioacetamide CH 3 -CS-NH 2 (TAM) as a sulfide ion source. The preparative parameters are optimized and growth mechanism is discussed. X-ray diffractograms indicate that the films are polycrystalline in nature. A microstructural study has been carried out using a scanning electron microscopy technique. From optical absorption studies the energy bandgap of Bi 2 S 3 is estimated to be 1.84 eV. Room temperature resistivity is of the order of 10 5 ohm cm.
Xin Zhang - One of the best experts on this subject based on the ideXlab platform.
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mechanical property characterization of sputtered and plasma enhanced Chemical Deposition pecvd silicon nitride films after rapid thermal annealing
Sensors and Actuators A-physical, 2011Co-Authors: Pinghsin Wu, Kuangshun Ou, Kuoshen Chen, Xin ZhangAbstract:Abstract In this paper, the mechanical and fracture properties of silicon nitride films subjected to rapid thermal annealing (RTA) have been systemically tested. The residual stress, Young's modulus, hardness, fracture toughness, and interfacial strength of both sputtered and plasma-enhanced Chemical vapor Deposition (PECVD) silicon nitride films deposited on silicon wafers were measured and compared. The results indicated that the Young's modulus and hardness of both types of silicon nitride films significantly increased when the RTA temperature increased. Furthermore, RTA processes could also alter the state of residual stress. The initial residual compressive stress of sputtered silicon nitride film was gradually relieved, and the film became tensile after the RTA process. For PECVD silicon nitride, the tensile residual stress reached its peak after a 600 °C RTA, then dropped after further increases in RTA temperature, due to stress relaxation. The tendency of the equivalent fracture toughness was to exhibit a strong correlation with that shown in the residual stress of silicon nitride. By considering the effect of residual stress, the real fracture toughness of both types of silicon nitride films were slightly enhanced by using RTA processes. Finally, experimental results indicated that the interfacial strength of PECVD silicon nitride could also be significantly improved by RTA processes at 600–800 °C. On the other hand, the initial interfacial strength of the sputtered silicon nitride was sufficiently strong, and the RTA processes only resulted in minor improvements. The characterization flow could be applied to other brittle films, and these specific test results should be useful for improving the structural integrity and process optimization of related MEMS and IC applications.
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mechanical property characterization of sputtered and plasma enhanced Chemical Deposition pecvd silicon nitride films after rapid thermal annealing
Sensors and Actuators A-physical, 2011Co-Authors: Ikuan Lin, Kuoshen Chen, H Y Yan, Xin ZhangAbstract:Abstract In this paper, the mechanical and fracture properties of silicon nitride films subjected to rapid thermal annealing (RTA) have been systemically tested. The residual stress, Young's modulus, hardness, fracture toughness, and interfacial strength of both sputtered and plasma-enhanced Chemical vapor Deposition (PECVD) silicon nitride films deposited on silicon wafers were measured and compared. The results indicated that the Young's modulus and hardness of both types of silicon nitride films significantly increased when the RTA temperature increased. Furthermore, RTA processes could also alter the state of residual stress. The initial residual compressive stress of sputtered silicon nitride film was gradually relieved, and the film became tensile after the RTA process. For PECVD silicon nitride, the tensile residual stress reached its peak after a 600 °C RTA, then dropped after further increases in RTA temperature, due to stress relaxation. The tendency of the equivalent fracture toughness was to exhibit a strong correlation with that shown in the residual stress of silicon nitride. By considering the effect of residual stress, the real fracture toughness of both types of silicon nitride films were slightly enhanced by using RTA processes. Finally, experimental results indicated that the interfacial strength of PECVD silicon nitride could also be significantly improved by RTA processes at 600–800 °C. On the other hand, the initial interfacial strength of the sputtered silicon nitride was sufficiently strong, and the RTA processes only resulted in minor improvements. The characterization flow could be applied to other brittle films, and these specific test results should be useful for improving the structural integrity and process optimization of related MEMS and IC applications.
Yongjoon Park - One of the best experts on this subject based on the ideXlab platform.
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microfabrication of licoo2 film using liquid source misted Chemical Deposition technique
Solid State Ionics, 2003Co-Authors: Kanghong Choi, Yongjoon ParkAbstract:Abstract The process called “liquid source misted Chemical Deposition” was used to prepare lithiated cobalt oxide film as a cathode for lithium rechargeable microbatteries. In this research, the effects of different solvents and heat treatments on the film properties were investigated. The precursor solution was a 0.2-M solution of LiNO 3 and Co(NO 3 ) 2 ·6H 2 O in 2-methoxyethanol and ethylene glycol, and was atomized using an ultrasonic nebulizer during the process. When the heat treatment of as-deposited films on Pt/SiO 2 /Si substrate for crystallization was carried out at 800 °C in rapid thermal apparatus (RTA) in the oxygen atmosphere for 5 min, the structural and compositional purity of the deposited film as well as its electroChemical activity were optimized. The prepared LiCoO 2 film exhibits the initial discharge capacity of 57.1 μA h/cm 2 ·μm. Because the cells cycled between 3.0 and 4.0 V and between 3.0 and 4.2 V show the capacity fade over 100 cycles of 43.1% and 52.1%, it is found that the capacity fade is partially ascribed to the phase transitions around 4.1 and 4.2 V as shown in the cyclic voltammogram.
Kwang Seok Oh - One of the best experts on this subject based on the ideXlab platform.
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combinatorial approach for ferroelectric material libraries prepared by liquid source misted Chemical Deposition method
Proceedings of the National Academy of Sciences of the United States of America, 2007Co-Authors: Min Ku Jeon, Kwang Seok OhAbstract:Combinatorial approach for discovering novel functional materials in the huge diversity of Chemical composition and processing conditions has become more important for breakthrough in thin film electronic and energy-conversion devices. The efficiency of combinatorial method depends on the preparation of a reliable high-density composition thin-film library. The physico-Chemical properties of each sample on the library should be similar to those of the corresponding samples prepared by one-by-one conventional methods. We successfully developed the combinatorial liquid source misted Chemical Deposition (LSMCD) method and demonstrated its validity in screening the Chemical composition of Bi3.75LaxCe0.25-xTi3O12 (BLCT) for high remanent polarization (Pr). LSMCD is a cheap promising combinatorial screening tool. It can control the composition up to ppm level and produce homogeneous multicomponent library. LSMCD method allows us to prepare BLCT thin-film library at the variation of 0.4 mol% of La. Maximum 2Pr is 35 μC/cm−2 at x = 0.21. The intensity of (117) XRD peak is quantitatively related to 2Pr. Newly developed scanning piezoelectric deformation measurement for nano-sized samples using scanning probe microscope (SPM) is also found out to be reliable for determining the relative ranking of Pr value rapidly.
H A Ching - One of the best experts on this subject based on the ideXlab platform.
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Annealing effects on the properties of copper oxide thin films prepared by Chemical Deposition
Semiconductor Science and Technology, 2005Co-Authors: Necmi Serin, Şeyda Horzum, M S M Suan, N L Hawari, Tülay Serin, Yasemin Çelik, Mohd Rafie Johan, H A ChingAbstract:We have investigated the annealing effect on the structural, optical and electrical properties of copper oxide films prepared on glass substrates by Chemical Deposition. The films were annealed in air for different temperatures ranging from 200 to 350 °C. X-ray diffraction patterns showed that the films as-deposited and annealed at 200 and 250 °C are of cuprite structure with composition Cu 2 O. Annealing at 300 °C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.20 eV to 1.35 eV. Also this conversion was obtained by the dc electrical conductivity and FTIR spectroscopy measurements.