The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Yuping Sun - One of the best experts on this subject based on the ideXlab platform.
-
growth microstructures and optoelectronic properties of epitaxial basn1 xsbxo3 δ thin films by Chemical Solution Deposition
ACS Applied Energy Materials, 2018Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Xuebin Zhu, Yuping Sun, Xuan LuoAbstract:Epitaxial thin films of perovskite BaSn1–xSbxO3−δ are fabricated by a simple Chemical Solution Deposition method, and the relationship among the processing, the microstructure, and the optoelectronic property is systematically investigated. The process of multiple annealing combined with the postannealing under nitrogen ambient is the optimal procedure to fabricate high quality BaSnO3−δ thin films. Sb doping in Sn sites facilitates the epitaxial growth of the BaSnO3−δ grains. The Hall results show that with increasing Sb doping content the carrier density and the carrier mobility are enhanced and decreased, respectively, resulting in the highest room-temperature electrical conductivity of 260 S/cm in the BaSn0.91Sb0.09O3−δ thin film. It is confirmed that the ionized Sb5+ and oxygen vacancies are the main scattering sources for carrier transport in BaSn1–xSbxO3−δ thin films. The results will provide guidance for synthesis of BaSnO3−δ-based and other donor-doped perovskite transparent conducting large-area ...
-
improved ferroelectric polarization of v doped bi6fe2ti3o18 thin films prepared by a Chemical Solution Deposition
Journal of Applied Physics, 2015Co-Authors: Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Dongpo Song, Bin Yuan, Xuzhong Zuo, L Chen, Yuping SunAbstract:We prepared V-doped Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by using a Chemical Solution Deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi6Fe2Ti3O18 thin films. The Bi5.97Fe2Ti2.91V0.09O18 thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2Pr) over 30 μC/cm2 in Bi5.97Fe2Ti2.91V0.09O18 thin film compared with 10 μC/cm2 in Bi6Fe2Ti3O18 thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi6Fe2Ti3O18 thin films by Chemical Solution Deposition, which is important to further explore single-phase multiferroics in the ...
-
self assembled c axis oriented antiperovskite soft magnetic cunco3 thin films by Chemical Solution Deposition
Journal of Materials Chemistry C, 2015Co-Authors: Zhenzhen Hui, Renhuai Wei, Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Yuping Sun, Dingfu Shao, P TongAbstract:Preparation of antiperovskite thin films is challenging work due to their complex phase diagram and easy decomposition during processing, which hinder the fundamental studies and applications. Herein, we report the preparation of antiperovskite CuNCo3 (CNC) thin films on several different single crystal substrates by Chemical Solution Deposition. The results show that the derived CNC thin films are c-axis oriented regardless of the substrate orientation, suggesting the self-assembled c-axis orientation. The microstructures as well as the physical properties are investigated, showing that the CNC thin films are metallic and can be considered as a new type of soft-magnet with a ferromagnetic Curie temperature higher than 650 K. The results will provide an effective route for fabricating antiperovskite cobalt-based thin films as well as provide a prototype for the investigation of the growth mechanisms of complex metal nitride thin films by Solution methods.
-
ca3co4o9 polycrystalline al2o3 an effective template for c axis oriented layered cobaltate thin films by Chemical Solution Deposition
RSC Advances, 2015Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Changhao Liang, Wenhai Song, Xuebin Zhu, Yuping SunAbstract:In this paper, Bi2Sr2Co2Oy and Bi2Ba2Co2Oy thin films were prepared on Ca3Co4O9/polycrystalline Al2O3 thin films by Chemical Solution Deposition. The results show that both of the bismuth-based cobaltate thin films are self-assembled c-axis oriented, which confirms that Ca3Co4O9/polycrystalline Al2O3 thin film can be used as an effective template to induce c-axis oriented grain growth in layered cobaltate thin films. The annealing temperature effects on Bi2Sr2Co2Oy thin films were investigated, and the resistivity and Seebeck coefficient decrease with the increasing annealing temperature. The results will provide an effective template to realize self-assembled c-axis oriented layered cobaltate thin films on polycrystalline substrates by Chemical Solution Deposition.
-
thickness dependence of dielectric leakage and ferroelectric properties of bi6fe2ti3o18 thin films derived by Chemical Solution Deposition
Journal of the American Ceramic Society, 2014Co-Authors: Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Dongpo Song, Bin Yuan, Xuzhong Zuo, L Chen, Yuping SunAbstract:We prepared Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si substrates with thickness ranging from ∼300 to ∼900 nm by using a Chemical Solution Deposition route and investigated the thickness effects on the microstructure, dielectric, leakage, and ferroelectric properties of Bi6Fe2Ti3O18 thin films. Increasing thickness improves the surface morphology, dielectric, and leakage properties of Bi6Fe2Ti3O18 thin films and a well-defined ferroelectric hysteresis loops can form for the thin films with the thickness above 400 nm. Moreover, the thickness dependence of saturation polarization is insignificant, whereas the remnant polarization decreases slightly with increasing thickness and it possesses a maximal value of ∼20 μC/cm2 for the 500 nm-thick thin films. The mechanisms of the thickness dependence of microstructure, dielectric, and ferroelectric properties are discussed in detail. The results will provide a guidance to optimize the ferroelectric properties in Bi6Fe2Ti3O18 thin films by Chemical Solution Deposition, which is important to further explore single-phase multiferroics in the n = 5 Aurivillius thin films.
Xuebin Zhu - One of the best experts on this subject based on the ideXlab platform.
-
all Chemical Solution Deposition of epitaxial porous bife 0 93 mn 0 07 o 3 thin films
Journal of Materials Science: Materials in Electronics, 2020Co-Authors: Li Zhang, Bingbing Yang, Yan Deng, Chengbing Zhao, Kai Huang, Min Zhang, Xuebin ZhuAbstract:BiFeO3 as a type of single-phase room temperature multiferroic materials has aroused intensive investigations in recent years. Construction of porous BiFeO3 thin films is helpful for integration of other materials with desirable functionalities. Here, epitaxial BiFe0.93Mn0.07O3 (001) thin films were prepared on SrRuO3-buffered LaAlO3 (001) single crystal substrates by an all-Solution Chemical Solution Deposition, which is beneficial for large area thin film fabrication with low cost. Through addition of F-127 copolymer into the precursor Solution, pores can be effectively introduced in BiFe0.93Mn0.07O3 (001) thin films while the epitaxy can be maintained. The amount of pores is gradually increased with increasing of the F-127 addition. The leakage current density is not obviously changed and the conduction mechanism can be well fitted through Ohmic behavior. Electric field dependent polarization hysteresis loops can be effectively maintained and the room temperature magnetic moment is obviously improved with the introduction of pores in epitaxial BiFe0.93Mn0.07O3 (001) thin films. The results will provide a facile route to fabricate large area epitaxial porous BiFeO3 thin films as an effective template for integration of other materials to realize desirable functionalities.
-
growth microstructures and optoelectronic properties of epitaxial basn1 xsbxo3 δ thin films by Chemical Solution Deposition
ACS Applied Energy Materials, 2018Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Xuebin Zhu, Yuping Sun, Xuan LuoAbstract:Epitaxial thin films of perovskite BaSn1–xSbxO3−δ are fabricated by a simple Chemical Solution Deposition method, and the relationship among the processing, the microstructure, and the optoelectronic property is systematically investigated. The process of multiple annealing combined with the postannealing under nitrogen ambient is the optimal procedure to fabricate high quality BaSnO3−δ thin films. Sb doping in Sn sites facilitates the epitaxial growth of the BaSnO3−δ grains. The Hall results show that with increasing Sb doping content the carrier density and the carrier mobility are enhanced and decreased, respectively, resulting in the highest room-temperature electrical conductivity of 260 S/cm in the BaSn0.91Sb0.09O3−δ thin film. It is confirmed that the ionized Sb5+ and oxygen vacancies are the main scattering sources for carrier transport in BaSn1–xSbxO3−δ thin films. The results will provide guidance for synthesis of BaSnO3−δ-based and other donor-doped perovskite transparent conducting large-area ...
-
self assembled c axis oriented δ mon thin films on si substrates by Chemical Solution Deposition growth transport and superconducting properties
Journal of Alloys and Compounds, 2017Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Hongmei Luo, Zhenzhen Hui, Hanlu Zhang, Xuebin ZhuAbstract:Abstract Molybdenum nitrides Mo-N are considered as the hardest superconducting metal nitrides, which are usually prepared under high pressure and high temperature to obtain high superconducting transition temperature T c . Here, polycrystalline δ -MoN thin films with self-assembled c -axis orientation are directly deposited onto Si substrates by Chemical Solution Deposition under ambient NH 3 annealing atmosphere without high pressure processing. The prepared δ -MoN/Si thin films show T c higher than 12 K. The normal state resistivity obeys electron-phonon scattering mechanism and can be well fitted by Bloch-Gruneisen expression. The results will provide an effective route to prepare large-area δ -MoN/Si thin films with high T c as well as a guidance to investigate the fundamental properties of polycrystalline δ -MoN thin films.
-
annealing temperature effects on 111 oriented bifeo3 thin films deposited on pt ti sio2 si by Chemical Solution Deposition
Journal of Materials Chemistry C, 2015Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Dongpo Song, Linghua Jin, Xuebin ZhuAbstract:As the most-studied multiferroic material, (111)-oriented BiFeO3 (BFO) thin films are desirable due to the highest polarization in the (111) plane. The difficulty of achieving large-area (111)-oriented BFO films on silicon wafers towards implementation with silicon technology has hindered the development of BFO films. Herein, we report the annealing temperature effects on Chemical Solution Deposition (CSD) derived BFO films on Pt(111)/Ti/SiO2/Si substrates without any buffer layer. The derived BFO films shows a strong (111) orientation with a distorted rhombohedral structure and R3c space group. The annealing temperature effects on the microstructures as well as the properties were investigated. A dense and crack-free surface was obtained in the low-temperature annealed films. Relatively high room-temperature remnant polarization 2Pr (120–140 μC cm−2) could be obtained with low leakage (∼10−5 A cm−2 at 200 kV cm−1). Scanning electron microscopy and transmission electron microscopy showed that this is an available route for fabricating large-area (111)-oriented BFO films on silicon-based wafers with high 2Pr using low-cost Solution processing.
-
improved ferroelectric polarization of v doped bi6fe2ti3o18 thin films prepared by a Chemical Solution Deposition
Journal of Applied Physics, 2015Co-Authors: Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Dongpo Song, Bin Yuan, Xuzhong Zuo, L Chen, Yuping SunAbstract:We prepared V-doped Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by using a Chemical Solution Deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi6Fe2Ti3O18 thin films. The Bi5.97Fe2Ti2.91V0.09O18 thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2Pr) over 30 μC/cm2 in Bi5.97Fe2Ti2.91V0.09O18 thin film compared with 10 μC/cm2 in Bi6Fe2Ti3O18 thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi6Fe2Ti3O18 thin films by Chemical Solution Deposition, which is important to further explore single-phase multiferroics in the ...
Wenhai Song - One of the best experts on this subject based on the ideXlab platform.
-
porous fe3o4 thin films by pulsed laser assisted Chemical Solution Deposition at room temperature
Applied Surface Science, 2019Co-Authors: Renhuai Wei, Wenhai Song, Yanqiu Liu, Wei Ding, Xin Wang, Zhigao Sheng, Jianming DaiAbstract:Abstract Porous thin films showing improved physicoChemical properties are desirable. Here, we developed a facile route, laser-assisted Chemical Solution Deposition (LACSD), to deposit porous Fe3O4 thin films. The synthesized porous Fe3O4 thin films show excellent electroChemical performance as anodes in lithium ion batteries. The results will provide a facile route to synthesize porous large-area metal oxide thin films.
-
growth microstructures and optoelectronic properties of epitaxial basn1 xsbxo3 δ thin films by Chemical Solution Deposition
ACS Applied Energy Materials, 2018Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Xuebin Zhu, Yuping Sun, Xuan LuoAbstract:Epitaxial thin films of perovskite BaSn1–xSbxO3−δ are fabricated by a simple Chemical Solution Deposition method, and the relationship among the processing, the microstructure, and the optoelectronic property is systematically investigated. The process of multiple annealing combined with the postannealing under nitrogen ambient is the optimal procedure to fabricate high quality BaSnO3−δ thin films. Sb doping in Sn sites facilitates the epitaxial growth of the BaSnO3−δ grains. The Hall results show that with increasing Sb doping content the carrier density and the carrier mobility are enhanced and decreased, respectively, resulting in the highest room-temperature electrical conductivity of 260 S/cm in the BaSn0.91Sb0.09O3−δ thin film. It is confirmed that the ionized Sb5+ and oxygen vacancies are the main scattering sources for carrier transport in BaSn1–xSbxO3−δ thin films. The results will provide guidance for synthesis of BaSnO3−δ-based and other donor-doped perovskite transparent conducting large-area ...
-
self assembled c axis oriented δ mon thin films on si substrates by Chemical Solution Deposition growth transport and superconducting properties
Journal of Alloys and Compounds, 2017Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Hongmei Luo, Zhenzhen Hui, Hanlu Zhang, Xuebin ZhuAbstract:Abstract Molybdenum nitrides Mo-N are considered as the hardest superconducting metal nitrides, which are usually prepared under high pressure and high temperature to obtain high superconducting transition temperature T c . Here, polycrystalline δ -MoN thin films with self-assembled c -axis orientation are directly deposited onto Si substrates by Chemical Solution Deposition under ambient NH 3 annealing atmosphere without high pressure processing. The prepared δ -MoN/Si thin films show T c higher than 12 K. The normal state resistivity obeys electron-phonon scattering mechanism and can be well fitted by Bloch-Gruneisen expression. The results will provide an effective route to prepare large-area δ -MoN/Si thin films with high T c as well as a guidance to investigate the fundamental properties of polycrystalline δ -MoN thin films.
-
annealing temperature effects on 111 oriented bifeo3 thin films deposited on pt ti sio2 si by Chemical Solution Deposition
Journal of Materials Chemistry C, 2015Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Dongpo Song, Linghua Jin, Xuebin ZhuAbstract:As the most-studied multiferroic material, (111)-oriented BiFeO3 (BFO) thin films are desirable due to the highest polarization in the (111) plane. The difficulty of achieving large-area (111)-oriented BFO films on silicon wafers towards implementation with silicon technology has hindered the development of BFO films. Herein, we report the annealing temperature effects on Chemical Solution Deposition (CSD) derived BFO films on Pt(111)/Ti/SiO2/Si substrates without any buffer layer. The derived BFO films shows a strong (111) orientation with a distorted rhombohedral structure and R3c space group. The annealing temperature effects on the microstructures as well as the properties were investigated. A dense and crack-free surface was obtained in the low-temperature annealed films. Relatively high room-temperature remnant polarization 2Pr (120–140 μC cm−2) could be obtained with low leakage (∼10−5 A cm−2 at 200 kV cm−1). Scanning electron microscopy and transmission electron microscopy showed that this is an available route for fabricating large-area (111)-oriented BFO films on silicon-based wafers with high 2Pr using low-cost Solution processing.
-
improved ferroelectric polarization of v doped bi6fe2ti3o18 thin films prepared by a Chemical Solution Deposition
Journal of Applied Physics, 2015Co-Authors: Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Dongpo Song, Bin Yuan, Xuzhong Zuo, L Chen, Yuping SunAbstract:We prepared V-doped Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by using a Chemical Solution Deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi6Fe2Ti3O18 thin films. The Bi5.97Fe2Ti2.91V0.09O18 thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2Pr) over 30 μC/cm2 in Bi5.97Fe2Ti2.91V0.09O18 thin film compared with 10 μC/cm2 in Bi6Fe2Ti3O18 thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi6Fe2Ti3O18 thin films by Chemical Solution Deposition, which is important to further explore single-phase multiferroics in the ...
Xianwu Tang - One of the best experts on this subject based on the ideXlab platform.
-
growth microstructures and optoelectronic properties of epitaxial basn1 xsbxo3 δ thin films by Chemical Solution Deposition
ACS Applied Energy Materials, 2018Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Xuebin Zhu, Yuping Sun, Xuan LuoAbstract:Epitaxial thin films of perovskite BaSn1–xSbxO3−δ are fabricated by a simple Chemical Solution Deposition method, and the relationship among the processing, the microstructure, and the optoelectronic property is systematically investigated. The process of multiple annealing combined with the postannealing under nitrogen ambient is the optimal procedure to fabricate high quality BaSnO3−δ thin films. Sb doping in Sn sites facilitates the epitaxial growth of the BaSnO3−δ grains. The Hall results show that with increasing Sb doping content the carrier density and the carrier mobility are enhanced and decreased, respectively, resulting in the highest room-temperature electrical conductivity of 260 S/cm in the BaSn0.91Sb0.09O3−δ thin film. It is confirmed that the ionized Sb5+ and oxygen vacancies are the main scattering sources for carrier transport in BaSn1–xSbxO3−δ thin films. The results will provide guidance for synthesis of BaSnO3−δ-based and other donor-doped perovskite transparent conducting large-area ...
-
self assembled c axis oriented δ mon thin films on si substrates by Chemical Solution Deposition growth transport and superconducting properties
Journal of Alloys and Compounds, 2017Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Hongmei Luo, Zhenzhen Hui, Hanlu Zhang, Xuebin ZhuAbstract:Abstract Molybdenum nitrides Mo-N are considered as the hardest superconducting metal nitrides, which are usually prepared under high pressure and high temperature to obtain high superconducting transition temperature T c . Here, polycrystalline δ -MoN thin films with self-assembled c -axis orientation are directly deposited onto Si substrates by Chemical Solution Deposition under ambient NH 3 annealing atmosphere without high pressure processing. The prepared δ -MoN/Si thin films show T c higher than 12 K. The normal state resistivity obeys electron-phonon scattering mechanism and can be well fitted by Bloch-Gruneisen expression. The results will provide an effective route to prepare large-area δ -MoN/Si thin films with high T c as well as a guidance to investigate the fundamental properties of polycrystalline δ -MoN thin films.
-
annealing temperature effects on 111 oriented bifeo3 thin films deposited on pt ti sio2 si by Chemical Solution Deposition
Journal of Materials Chemistry C, 2015Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Dongpo Song, Linghua Jin, Xuebin ZhuAbstract:As the most-studied multiferroic material, (111)-oriented BiFeO3 (BFO) thin films are desirable due to the highest polarization in the (111) plane. The difficulty of achieving large-area (111)-oriented BFO films on silicon wafers towards implementation with silicon technology has hindered the development of BFO films. Herein, we report the annealing temperature effects on Chemical Solution Deposition (CSD) derived BFO films on Pt(111)/Ti/SiO2/Si substrates without any buffer layer. The derived BFO films shows a strong (111) orientation with a distorted rhombohedral structure and R3c space group. The annealing temperature effects on the microstructures as well as the properties were investigated. A dense and crack-free surface was obtained in the low-temperature annealed films. Relatively high room-temperature remnant polarization 2Pr (120–140 μC cm−2) could be obtained with low leakage (∼10−5 A cm−2 at 200 kV cm−1). Scanning electron microscopy and transmission electron microscopy showed that this is an available route for fabricating large-area (111)-oriented BFO films on silicon-based wafers with high 2Pr using low-cost Solution processing.
-
improved ferroelectric polarization of v doped bi6fe2ti3o18 thin films prepared by a Chemical Solution Deposition
Journal of Applied Physics, 2015Co-Authors: Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Dongpo Song, Bin Yuan, Xuzhong Zuo, L Chen, Yuping SunAbstract:We prepared V-doped Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by using a Chemical Solution Deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi6Fe2Ti3O18 thin films. The Bi5.97Fe2Ti2.91V0.09O18 thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2Pr) over 30 μC/cm2 in Bi5.97Fe2Ti2.91V0.09O18 thin film compared with 10 μC/cm2 in Bi6Fe2Ti3O18 thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi6Fe2Ti3O18 thin films by Chemical Solution Deposition, which is important to further explore single-phase multiferroics in the ...
-
self assembled c axis oriented antiperovskite soft magnetic cunco3 thin films by Chemical Solution Deposition
Journal of Materials Chemistry C, 2015Co-Authors: Zhenzhen Hui, Renhuai Wei, Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Yuping Sun, Dingfu Shao, P TongAbstract:Preparation of antiperovskite thin films is challenging work due to their complex phase diagram and easy decomposition during processing, which hinder the fundamental studies and applications. Herein, we report the preparation of antiperovskite CuNCo3 (CNC) thin films on several different single crystal substrates by Chemical Solution Deposition. The results show that the derived CNC thin films are c-axis oriented regardless of the substrate orientation, suggesting the self-assembled c-axis orientation. The microstructures as well as the physical properties are investigated, showing that the CNC thin films are metallic and can be considered as a new type of soft-magnet with a ferromagnetic Curie temperature higher than 650 K. The results will provide an effective route for fabricating antiperovskite cobalt-based thin films as well as provide a prototype for the investigation of the growth mechanisms of complex metal nitride thin films by Solution methods.
Jie Yang - One of the best experts on this subject based on the ideXlab platform.
-
growth microstructures and optoelectronic properties of epitaxial basn1 xsbxo3 δ thin films by Chemical Solution Deposition
ACS Applied Energy Materials, 2018Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Xuebin Zhu, Yuping Sun, Xuan LuoAbstract:Epitaxial thin films of perovskite BaSn1–xSbxO3−δ are fabricated by a simple Chemical Solution Deposition method, and the relationship among the processing, the microstructure, and the optoelectronic property is systematically investigated. The process of multiple annealing combined with the postannealing under nitrogen ambient is the optimal procedure to fabricate high quality BaSnO3−δ thin films. Sb doping in Sn sites facilitates the epitaxial growth of the BaSnO3−δ grains. The Hall results show that with increasing Sb doping content the carrier density and the carrier mobility are enhanced and decreased, respectively, resulting in the highest room-temperature electrical conductivity of 260 S/cm in the BaSn0.91Sb0.09O3−δ thin film. It is confirmed that the ionized Sb5+ and oxygen vacancies are the main scattering sources for carrier transport in BaSn1–xSbxO3−δ thin films. The results will provide guidance for synthesis of BaSnO3−δ-based and other donor-doped perovskite transparent conducting large-area ...
-
self assembled c axis oriented δ mon thin films on si substrates by Chemical Solution Deposition growth transport and superconducting properties
Journal of Alloys and Compounds, 2017Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Hongmei Luo, Zhenzhen Hui, Hanlu Zhang, Xuebin ZhuAbstract:Abstract Molybdenum nitrides Mo-N are considered as the hardest superconducting metal nitrides, which are usually prepared under high pressure and high temperature to obtain high superconducting transition temperature T c . Here, polycrystalline δ -MoN thin films with self-assembled c -axis orientation are directly deposited onto Si substrates by Chemical Solution Deposition under ambient NH 3 annealing atmosphere without high pressure processing. The prepared δ -MoN/Si thin films show T c higher than 12 K. The normal state resistivity obeys electron-phonon scattering mechanism and can be well fitted by Bloch-Gruneisen expression. The results will provide an effective route to prepare large-area δ -MoN/Si thin films with high T c as well as a guidance to investigate the fundamental properties of polycrystalline δ -MoN thin films.
-
annealing temperature effects on 111 oriented bifeo3 thin films deposited on pt ti sio2 si by Chemical Solution Deposition
Journal of Materials Chemistry C, 2015Co-Authors: Renhuai Wei, Xianwu Tang, Jie Yang, Jianming Dai, Wenhai Song, Dongpo Song, Linghua Jin, Xuebin ZhuAbstract:As the most-studied multiferroic material, (111)-oriented BiFeO3 (BFO) thin films are desirable due to the highest polarization in the (111) plane. The difficulty of achieving large-area (111)-oriented BFO films on silicon wafers towards implementation with silicon technology has hindered the development of BFO films. Herein, we report the annealing temperature effects on Chemical Solution Deposition (CSD) derived BFO films on Pt(111)/Ti/SiO2/Si substrates without any buffer layer. The derived BFO films shows a strong (111) orientation with a distorted rhombohedral structure and R3c space group. The annealing temperature effects on the microstructures as well as the properties were investigated. A dense and crack-free surface was obtained in the low-temperature annealed films. Relatively high room-temperature remnant polarization 2Pr (120–140 μC cm−2) could be obtained with low leakage (∼10−5 A cm−2 at 200 kV cm−1). Scanning electron microscopy and transmission electron microscopy showed that this is an available route for fabricating large-area (111)-oriented BFO films on silicon-based wafers with high 2Pr using low-cost Solution processing.
-
improved ferroelectric polarization of v doped bi6fe2ti3o18 thin films prepared by a Chemical Solution Deposition
Journal of Applied Physics, 2015Co-Authors: Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Dongpo Song, Bin Yuan, Xuzhong Zuo, L Chen, Yuping SunAbstract:We prepared V-doped Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by using a Chemical Solution Deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi6Fe2Ti3O18 thin films. The Bi5.97Fe2Ti2.91V0.09O18 thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2Pr) over 30 μC/cm2 in Bi5.97Fe2Ti2.91V0.09O18 thin film compared with 10 μC/cm2 in Bi6Fe2Ti3O18 thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi6Fe2Ti3O18 thin films by Chemical Solution Deposition, which is important to further explore single-phase multiferroics in the ...
-
self assembled c axis oriented antiperovskite soft magnetic cunco3 thin films by Chemical Solution Deposition
Journal of Materials Chemistry C, 2015Co-Authors: Zhenzhen Hui, Renhuai Wei, Xianwu Tang, Jie Yang, Wenhai Song, Xuebin Zhu, Yuping Sun, Dingfu Shao, P TongAbstract:Preparation of antiperovskite thin films is challenging work due to their complex phase diagram and easy decomposition during processing, which hinder the fundamental studies and applications. Herein, we report the preparation of antiperovskite CuNCo3 (CNC) thin films on several different single crystal substrates by Chemical Solution Deposition. The results show that the derived CNC thin films are c-axis oriented regardless of the substrate orientation, suggesting the self-assembled c-axis orientation. The microstructures as well as the physical properties are investigated, showing that the CNC thin films are metallic and can be considered as a new type of soft-magnet with a ferromagnetic Curie temperature higher than 650 K. The results will provide an effective route for fabricating antiperovskite cobalt-based thin films as well as provide a prototype for the investigation of the growth mechanisms of complex metal nitride thin films by Solution methods.