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Klavs F. Jensen - One of the best experts on this subject based on the ideXlab platform.

  • Multiscale modeling of Chemical Vapor Deposition
    Journal of Applied Physics, 1998
    Co-Authors: Seth T. Rodgers, Klavs F. Jensen
    Abstract:

    An integrated method for modeling Chemical Vapor Deposition on length scales ranging from microns to meters has been developed. The macroscale problem of flow and transport in a single wafer, low pressure Chemical Vapor Deposition reactor is solved using the finite element method. However, on the feature scale, continuum models of flow and transport are not valid and discrete particle transport models must be employed. The two transport regimes, continuum and discrete particle, are linked by an effective reactivity function e which includes both effects of multiscale surface heterogeneity and microscale transport resistance. A hybrid ballistic transport, Monte Carlo method, is developed permitting calculation of e for any set of reaction pathways occurring over microelectronic device features of any geometry. Surface topography, that is, feature scale calculations, are combined to yield an effective reactivity map over the surface of the substrate. This map is subsequently used to formulate a flux boundar...

  • Modeling Approaches for Rapid Thermal Chemical Vapor Deposition
    Advances in Rapid Thermal and Integrated Processing, 1996
    Co-Authors: Klavs F. Jensen, H. Simka, Theodoros G. Mihopoulos, P. Futerko, M. Hierlemann
    Abstract:

    Chemical Vapor Deposition (CVD) performed in rapid thermal processing (RTP) chambers, also referred to as rapid thermal Chemical Vapor Deposition (RTCVD), has been demonstrated for a wide range of typical microelectronics manufacturing processes [1], including growth of silicon [2], silicon oxide [3], and silicon nitride [4], as well as new processes, such as the growth of silicon germanium alloys [5]. These CVD systems share common features of gas-phase and surface reactions combined with fluid flow, heat transfer, and Chemical species transport (cf. Figure 1).

Peter J. Hesketh - One of the best experts on this subject based on the ideXlab platform.

  • Rapid Thermal Chemical Vapor Deposition
    Rapid Thermal Processing of Semiconductors, 1997
    Co-Authors: Victor E. Borisenko, Peter J. Hesketh
    Abstract:

    Rapid thermal Chemical Vapor Deposition (RTCVD) is a relatively new development in rapid thermal processing. Although it is being applied to a range of materials, the potential for further development is great. The earliest work was on single-crystal epitaxial silicon by Gibbons and colleagues [1] who referred to the process as limited reaction processing (LRP). One of the principal advantages of RTCVD is that sharp transitions are obtained between layers of differing composition or doping, while exposing the substrate to a much lower thermal budget than a furnace low-pressure Chemical Vapor Deposition (LPCVD) process. The maximum temperature reached is typically higher, however, providing good crystal quality and dopant activation. Applications of lightly doped epitaxially grown silicon on heavily doped silicon substrates include the fabrication of CMOS devices with reduced latch-up, and high-frequency bipolar junction transistors (BJTs) with a lightly doped base region on a heavily doped buried layer.

M. Hierlemann - One of the best experts on this subject based on the ideXlab platform.

  • Modeling Approaches for Rapid Thermal Chemical Vapor Deposition
    Advances in Rapid Thermal and Integrated Processing, 1996
    Co-Authors: Klavs F. Jensen, H. Simka, Theodoros G. Mihopoulos, P. Futerko, M. Hierlemann
    Abstract:

    Chemical Vapor Deposition (CVD) performed in rapid thermal processing (RTP) chambers, also referred to as rapid thermal Chemical Vapor Deposition (RTCVD), has been demonstrated for a wide range of typical microelectronics manufacturing processes [1], including growth of silicon [2], silicon oxide [3], and silicon nitride [4], as well as new processes, such as the growth of silicon germanium alloys [5]. These CVD systems share common features of gas-phase and surface reactions combined with fluid flow, heat transfer, and Chemical species transport (cf. Figure 1).

D.t. Grider - One of the best experts on this subject based on the ideXlab platform.

  • Manufacturability issues in rapid thermal Chemical Vapor Deposition
    IEEE Transactions on Semiconductor Manufacturing, 1991
    Co-Authors: Mehmet C. Öztürk, F.y. Sorrell, J. J. Wortman, F.s. Johnson, D.t. Grider
    Abstract:

    Rapid thermal processing (RTP) has been considered from a manufacturing point of view as a potential technology for depositing thin films by low-pressure Chemical Vapor Deposition (LPCVD) in a single-wafer manufacturing environment. The results of this study suggest that new Chemical processes must be developed to satisfy the throughput requirements of single-wafer manufacturing and the demands of cold-wall reactor design. Issues such as temperature measurement and uniformity are reviewed and reconsidered in the context of LPCVD. New tool requirements for reduced pressure operation are discussed. New advances in tool design are needed (especially in temperature measurement) before rapid thermal Chemical Vapor Deposition (RTCVD) can be considered as a routine manufacturable process. >

Peng Ying-caia - One of the best experts on this subject based on the ideXlab platform.