The Experts below are selected from a list of 303 Experts worldwide ranked by ideXlab platform
S. C. Smith - One of the best experts on this subject based on the ideXlab platform.
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thin upper Confining Layer alxga1 xas gaas quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Thin upper‐Confining Layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers
Applied Physics Letters, 1991Co-Authors: Fred A. Kish, S. J. Caracci, Nick Holonyak, John Dallesasse, G. E. Höfler, R. D. Burnham, S. C. SmithAbstract:Impurity‐induced Layer disordering (IILD) along with oxidation (native oxide) of high‐gap AlxGa1−xAs Confining Layers is employed to fabricate low‐threshold stripe‐geometry buried‐heterostructure AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) lasers. Silicon IILD is used to intermix the quantum well and waveguide regions with the surrounding Confining Layers (beyond the laser stripe) to provide optical and current confinement in the QW region of the stripe. The high‐gap AlxGa1−xAs upper Confining Layer is oxidized in a self‐aligned configuration defined by the contact stripe and reduces IILD leakage currents at the crystal surface and diffused shunt junctions. AlxGa1−xAs‐GaAs QWH lasers fabricated by this method have continuous 300 K threshold currents as low as 5 mA and powers ≳ 3l mW/facet for ∼ 3‐μm‐wide active regions.
Robert D. Burnham - One of the best experts on this subject based on the ideXlab platform.
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thin upper Confining Layer alxga1 xas gaas quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Thin upper‐Confining Layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
S. J. Caracci - One of the best experts on this subject based on the ideXlab platform.
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thin upper Confining Layer alxga1 xas gaas quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Thin upper‐Confining Layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers
Applied Physics Letters, 1991Co-Authors: Fred A. Kish, S. J. Caracci, Nick Holonyak, John Dallesasse, G. E. Höfler, R. D. Burnham, S. C. SmithAbstract:Impurity‐induced Layer disordering (IILD) along with oxidation (native oxide) of high‐gap AlxGa1−xAs Confining Layers is employed to fabricate low‐threshold stripe‐geometry buried‐heterostructure AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) lasers. Silicon IILD is used to intermix the quantum well and waveguide regions with the surrounding Confining Layers (beyond the laser stripe) to provide optical and current confinement in the QW region of the stripe. The high‐gap AlxGa1−xAs upper Confining Layer is oxidized in a self‐aligned configuration defined by the contact stripe and reduces IILD leakage currents at the crystal surface and diffused shunt junctions. AlxGa1−xAs‐GaAs QWH lasers fabricated by this method have continuous 300 K threshold currents as low as 5 mA and powers ≳ 3l mW/facet for ∼ 3‐μm‐wide active regions.
Fred A. Kish - One of the best experts on this subject based on the ideXlab platform.
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thin upper Confining Layer alxga1 xas gaas quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Thin upper‐Confining Layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers
Applied Physics Letters, 1991Co-Authors: Fred A. Kish, S. J. Caracci, Nick Holonyak, John Dallesasse, G. E. Höfler, R. D. Burnham, S. C. SmithAbstract:Impurity‐induced Layer disordering (IILD) along with oxidation (native oxide) of high‐gap AlxGa1−xAs Confining Layers is employed to fabricate low‐threshold stripe‐geometry buried‐heterostructure AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) lasers. Silicon IILD is used to intermix the quantum well and waveguide regions with the surrounding Confining Layers (beyond the laser stripe) to provide optical and current confinement in the QW region of the stripe. The high‐gap AlxGa1−xAs upper Confining Layer is oxidized in a self‐aligned configuration defined by the contact stripe and reduces IILD leakage currents at the crystal surface and diffused shunt junctions. AlxGa1−xAs‐GaAs QWH lasers fabricated by this method have continuous 300 K threshold currents as low as 5 mA and powers ≳ 3l mW/facet for ∼ 3‐μm‐wide active regions.
Nick Holonyak - One of the best experts on this subject based on the ideXlab platform.
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thin upper Confining Layer alxga1 xas gaas quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Thin upper‐Confining Layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes
Applied Physics Letters, 1993Co-Authors: S. J. Caracci, Fred A. Kish, Michael R. Krames, M. J. Ries, Nick Holonyak, S. C. Smith, Robert D. BurnhamAbstract:AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper Confining Layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low broad‐area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper Confining Layers, ∼0.2 μm, have broad‐area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe‐geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper Confining Layers exhibit room‐temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far‐field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow‐stripe (∼4 μm) native‐oxide index‐guided laser diodes fabricated on the same 0.2 μm Confining Layer QWH crystal operate at pulsed thresholds as low as 9 mA and c...
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Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers
Applied Physics Letters, 1991Co-Authors: Fred A. Kish, S. J. Caracci, Nick Holonyak, John Dallesasse, G. E. Höfler, R. D. Burnham, S. C. SmithAbstract:Impurity‐induced Layer disordering (IILD) along with oxidation (native oxide) of high‐gap AlxGa1−xAs Confining Layers is employed to fabricate low‐threshold stripe‐geometry buried‐heterostructure AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) lasers. Silicon IILD is used to intermix the quantum well and waveguide regions with the surrounding Confining Layers (beyond the laser stripe) to provide optical and current confinement in the QW region of the stripe. The high‐gap AlxGa1−xAs upper Confining Layer is oxidized in a self‐aligned configuration defined by the contact stripe and reduces IILD leakage currents at the crystal surface and diffused shunt junctions. AlxGa1−xAs‐GaAs QWH lasers fabricated by this method have continuous 300 K threshold currents as low as 5 mA and powers ≳ 3l mW/facet for ∼ 3‐μm‐wide active regions.