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Aaron Thean - One of the best experts on this subject based on the ideXlab platform.

  • fundamental study of the apparent voltage dependence of nbti kinetics by Constant Electric Field stress in si and sige devices
    International Reliability Physics Symposium, 2016
    Co-Authors: S Mukhopadhyay, J Franco, Adrian Chasin, Ph J Roussel, B Kaczer, G Groeseneken, Naoto Horiguchi, D Linten, Aaron Thean
    Abstract:

    SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide Electric Field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide Electric Field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-Constant oxide Field BTI stress. This method eliminates the Field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.

  • fundamental study of the apparent voltage dependence of nbti kinetics by Constant Electric Field stress in si and sige devices
    International Reliability Physics Symposium, 2016
    Co-Authors: S Mukhopadhyay, J Franco, Adrian Chasin, Ph J Roussel, B Kaczer, G Groeseneken, Naoto Horiguchi, D Linten, Aaron Thean
    Abstract:

    SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide Electric Field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide Electric Field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-Constant oxide Field BTI stress. This method eliminates the Field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.

S Mukhopadhyay - One of the best experts on this subject based on the ideXlab platform.

  • fundamental study of the apparent voltage dependence of nbti kinetics by Constant Electric Field stress in si and sige devices
    International Reliability Physics Symposium, 2016
    Co-Authors: S Mukhopadhyay, J Franco, Adrian Chasin, Ph J Roussel, B Kaczer, G Groeseneken, Naoto Horiguchi, D Linten, Aaron Thean
    Abstract:

    SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide Electric Field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide Electric Field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-Constant oxide Field BTI stress. This method eliminates the Field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.

  • fundamental study of the apparent voltage dependence of nbti kinetics by Constant Electric Field stress in si and sige devices
    International Reliability Physics Symposium, 2016
    Co-Authors: S Mukhopadhyay, J Franco, Adrian Chasin, Ph J Roussel, B Kaczer, G Groeseneken, Naoto Horiguchi, D Linten, Aaron Thean
    Abstract:

    SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide Electric Field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide Electric Field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-Constant oxide Field BTI stress. This method eliminates the Field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.

Benoit Roux - One of the best experts on this subject based on the ideXlab platform.

  • Constant Electric Field simulations of the membrane potential illustrated with simple systems
    Biochimica et Biophysica Acta, 2012
    Co-Authors: James C Gumbart, Fatemeh Khaliliaraghi, Marcos Sotomayor, Benoit Roux
    Abstract:

    Abstract Advances in modern computational methods and technology make it possible to carry out extensive molecular dynamics simulations of complex membrane proteins based on detailed atomic models. The ultimate goal of such detailed simulations is to produce trajectories in which the behavior of the system is as realistic as possible. A critical aspect that requires consideration in the case of biological membrane systems is the existence of a net Electric potential difference across the membrane. For meaningful computations, it is important to have well validated methodologies for incorporating the latter in molecular dynamics simulations. A widely used treatment of the membrane potential in molecular dynamics consists of applying an external uniform Electric Field E perpendicular to the membrane. The Field acts on all charged particles throughout the simulated system, and the resulting applied membrane potential V is equal to the applied Electric Field times the length of the periodic cell in the direction perpendicular to the membrane. A series of test simulations based on simple membrane-slab models are carried out to clarify the consequences of the applied Field. These illustrative tests demonstrate that the Constant-Field method is a simple and valid approach for accounting for the membrane potential in molecular dynamics studies of biomolecular systems. This article is part of a Special Issue entitled: Membrane protein structure and function.

  • the membrane potential and its representation by a Constant Electric Field in computer simulations
    Biophysical Journal, 2008
    Co-Authors: Benoit Roux
    Abstract:

    A theoretical framework is elaborated to account for the effect of a transmembrane potential in computer simulations. It is shown that a simulation with a Constant external Electric Field applied in the direction normal to the membrane is equivalent to the influence of surrounding infinite baths maintained to a voltage difference via ion-exchanging electrodes connected to an electromotive force. It is also shown that the linearly-weighted displacement charge within the simulation system tracks the net flow of charge through the external circuit comprising the electromotive force and the electrodes. Using a statistical mechanical reduction of the degrees of freedom of the external system, three distinct theoretical routes are formulated and examined for the purpose of characterizing the free energy of a protein embedded in a membrane that is submitted to a voltage difference. The W-route is constructed from the variations in the voltage-dependent potential of mean force along a reaction path connecting two conformations of the protein. The Q-route is based on the average displacement charge as a function of the conformation of the protein. Finally, the G-route considers the relative charging free energy of specific residues, with and without applied membrane potentials. The theoretical formulation is illustrated with a simple model of an ion crossing a vacuum slab surrounded by two aqueous bulk phases and with a fragment of the voltage-sensor of the KvAP potassium channel.

J Franco - One of the best experts on this subject based on the ideXlab platform.

  • fundamental study of the apparent voltage dependence of nbti kinetics by Constant Electric Field stress in si and sige devices
    International Reliability Physics Symposium, 2016
    Co-Authors: S Mukhopadhyay, J Franco, Adrian Chasin, Ph J Roussel, B Kaczer, G Groeseneken, Naoto Horiguchi, D Linten, Aaron Thean
    Abstract:

    SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide Electric Field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide Electric Field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-Constant oxide Field BTI stress. This method eliminates the Field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.

  • fundamental study of the apparent voltage dependence of nbti kinetics by Constant Electric Field stress in si and sige devices
    International Reliability Physics Symposium, 2016
    Co-Authors: S Mukhopadhyay, J Franco, Adrian Chasin, Ph J Roussel, B Kaczer, G Groeseneken, Naoto Horiguchi, D Linten, Aaron Thean
    Abstract:

    SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide Electric Field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide Electric Field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-Constant oxide Field BTI stress. This method eliminates the Field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.

Adrian Chasin - One of the best experts on this subject based on the ideXlab platform.

  • fundamental study of the apparent voltage dependence of nbti kinetics by Constant Electric Field stress in si and sige devices
    International Reliability Physics Symposium, 2016
    Co-Authors: S Mukhopadhyay, J Franco, Adrian Chasin, Ph J Roussel, B Kaczer, G Groeseneken, Naoto Horiguchi, D Linten, Aaron Thean
    Abstract:

    SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide Electric Field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide Electric Field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-Constant oxide Field BTI stress. This method eliminates the Field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.

  • fundamental study of the apparent voltage dependence of nbti kinetics by Constant Electric Field stress in si and sige devices
    International Reliability Physics Symposium, 2016
    Co-Authors: S Mukhopadhyay, J Franco, Adrian Chasin, Ph J Roussel, B Kaczer, G Groeseneken, Naoto Horiguchi, D Linten, Aaron Thean
    Abstract:

    SiGe and Ge pMOSFETs, with channel passivation by Si cap and standard SiO2/HfO2 gate stack, show a very strong oxide Electric Field dependence of NBTI, beneficial for low voltage operation. However, standard NBTI extrapolation based on voltage accelerated stress tests is complicated for these devices due to an apparent correlation of time-dependence exponent (n) to the applied gate stress overdrive voltage (VOV). This behavior is found to be unrelated to the measurement delay, but induced by a gradual reduction of the stress oxide Electric Field during the NBTI stress due to the buildup of threshold voltage shift. A unique analog circuit based test setup is proposed to perform a quasi-Constant oxide Field BTI stress. This method eliminates the Field reduction effect during NBTI stress and therefore decouples the time exponent from the applied stress VOV. This allows to calculate the time-to-failure for SiGe and Ge channel devices unambiguously, confirming the superior NBTI reliability of these pMOS technologies as compared to standard Si devices. Possible limitations of the proposed measurement method are also discussed.