The Experts below are selected from a list of 309 Experts worldwide ranked by ideXlab platform
Nathan W. Cheung - One of the best experts on this subject based on the ideXlab platform.
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On the temperature variation of Threshold Voltage of GaAs MESFETs
IEEE Transactions on Electron Devices, 1992Co-Authors: H. Wong, C.l. Liang, Nathan W. CheungAbstract:The authors have investigated the temperature dependence of the Threshold Voltage of depletion-mode GaAs MESFETs with epitaxially grown n channels. An approach to Threshold shift analysis that allows direct comparison with Threshold measurement is taken. The contributions from various temperature-dependent effects to the Threshold-Voltage shift were studied, including the built-in Voltage of the Schottky barrier, deep-level transients, capping layer effects, the substrate-channel built-in Voltage, and the k factor which is related to channel mobility. A quasi-DC method for Threshold Voltage measurement, which enables Threshold Voltage to be measured as a function of temperature with minimum deep-level transient effect is reported. A method has also been developed to measure the temperature dependence of built-in Voltage which is completely free from transient effects. The results show that the major contributors to the temperature variation of Threshold Voltage are the temperature dependence of the Schottky barrier built-in Voltage and the effect of the capping layer. >
J. S. Wang - One of the best experts on this subject based on the ideXlab platform.
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Threshold Voltage of Ultrathin Gate-Insulator MOSFETs
IEEE Electron Device Letters, 2009Co-Authors: Chun-hsing Shih, J. S. WangAbstract:This letter elucidates the difficulties in applying the conventional 2psiB Threshold Voltage model for current MOSFETs with ultrathin gate insulator and presents a new comprehensive alternative for general MOSFETs. After high-k gate dielectric is successfully developed to acquire a strong gate control, the on-off switching of MOSFETs is no longer dependent on substrate doping concentration as before. A physical drift-current Threshold Voltage model is proposed directly from the drain current itself, where the Threshold Voltage is defined as the onset of the drift current playing the main contribution in the total drain current. It can properly predict Threshold Voltage for general MOSFET devices and appropriately provide a physical current criterion for extracting the Threshold Voltage.
Leobandung - One of the best experts on this subject based on the ideXlab platform.
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Experimental Study of Gate-First FinFET Threshold-Voltage Mismatch
IEEE Transactions on Electron Devices, 2014Co-Authors: Qintao Zhang, Cindy Wang, Hailing Wang, Christopher M. Schnabel, Dae-gyu Park, Scott K. Springer, LeobandungAbstract:In this brief, Threshold Voltage mismatch of fully integrated n-type FinFETs based on a gate-first process was studied experimentally. Significantly improved Threshold Voltage mismatch due to undoped FIN body was confirmed with the experimental data. By comparing mismatch values of thin- and thick-oxide nMOS, we found that factors, which do not scale with gate oxide thickness, including line edge roughness and metal-gate granularity (MGG), can explain ~ 60% of total mismatch of thin-oxide devices. Moreover, we report a convex shape of Threshold Voltage mismatch following the increase of the number of FINs and propose a possible explanation of the abnormal behavior. Due to channel width quantization, two competing contributors impact mismatch: as FIN number becomes smaller mismatch due to MGG likely play an important role which increases Threshold Voltage mismatch, whereas FIN number becomes larger, systematic variation becomes the main factor, which also increases Threshold Voltage mismatch.
M.s. Sharma - One of the best experts on this subject based on the ideXlab platform.
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Modeling the anomalous Threshold Voltage behavior of submicrometer MOSFET's
IEEE Electron Device Letters, 1992Co-Authors: N.d. Arora, M.s. SharmaAbstract:A simple yet accurate semi-empirical analytical model for simulating the anomalous Threshold Voltage behavior in submicrometer MOSFETs is reported. The increase in the Threshold Voltage with decreasing channel length has been modeled by assuming a bias-independent, but channel-length-dependent, fixed charge at the source and drain ends. The new model requires two extra parameters in addition to the usual short-channel Threshold Voltage model parameters. These two parameters represent the magnitude of the fixed charge and the length over which the charge is spread at the source and drain ends. The model shows excellent agreement with the experimental Threshold Voltage data (within 2%) for submicrometer devices with varying oxide thickness, junction depth, and channel doping concentration. >
H Dhakad - One of the best experts on this subject based on the ideXlab platform.
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new dual material sg nanoscale mosfet analytical Threshold Voltage model
IEEE Transactions on Electron Devices, 2006Co-Authors: Mamidala Jagadesh Kumar, Ali A Orouji, H DhakadAbstract:A new analytical model for the surface potential and Threshold Voltage of a surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately predict the Threshold-Voltage "roll off" for channel lengths even less than 90nm. The accuracy of the model results is verified using two-dimensional simulation.
