The Experts below are selected from a list of 255 Experts worldwide ranked by ideXlab platform
Angel Rubio - One of the best experts on this subject based on the ideXlab platform.
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doped graphene as tunable electron phonon Coupling Material
Nano Letters, 2010Co-Authors: Claudio Attaccalite, Ludger Wirtz, Michele Lazzeri, Francesco Mauri, Angel RubioAbstract:We present a new way to tune the electron-phonon Coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.
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Doped graphene as tunable electron-phonon Coupling Material
Nano Letters, 2010Co-Authors: Claudio Attaccalite, Ludger Wirtz, Michele Lazzeri, Francesco Mauri, Angel RubioAbstract:We present a new way to tune the electron-phonon Coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong dependency on the doping level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multi-layer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through the external control of the EPC.
Hongxin Yang - One of the best experts on this subject based on the ideXlab platform.
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significant dzyaloshinskii moriya interaction at graphene ferromagnet interfaces due to the rashba effect
Nature Materials, 2018Co-Authors: Hongxin Yang, Gong Chen, Alexandre A C Cotta, Alpha T Ndiaye, Sergey A Nikolaev, E A Soares, W A A MacedoAbstract:The possibility of utilizing the rich spin-dependent properties of graphene has attracted much attention in the pursuit of spintronics advances. The promise of high-speed and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. Here we demonstrate that chiral spin textures are induced at graphene/ferromagnetic metal interfaces. Graphene is a weak spin–orbit Coupling Material and is generally not expected to induce a sufficient Dzyaloshinskii–Moriya interaction to affect magnetic chirality. We demonstrate that indeed graphene does induce a type of Dzyaloshinskii–Moriya interaction due to the Rashba effect. First-principles calculations and experiments using spin-polarized electron microscopy show that this graphene-induced Dzyaloshinskii–Moriya interaction can have a similar magnitude to that at interfaces with heavy metals. This work paves a path towards two-dimensional-Material-based spin–orbitronics.
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Significant Dzyaloshinskii–Moriya interaction at graphene–ferromagnet interfaces due to the Rashba effect
Nature Materials, 2018Co-Authors: Hongxin Yang, Gong Chen, Alexandre Cotta, Alpha N’diaye, Sergey Nikolaev, Edmar Soares, Waldemar Macedo, Kai Liu, Andreas Schmid, Albert FertAbstract:The possibility of utilizing the rich spin-dependent properties of graphene has attracted much attention in the pursuit of spintronics advances. The promise of high-speed and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. Here we demonstrate that chiral spin textures are induced at graphene/ferromagnetic metal interfaces. Graphene is a weak spin–orbit Coupling Material and is generally not expected to induce a sufficient Dzyaloshinskii–Moriya interaction to affect magnetic chirality. We demonstrate that indeed graphene does induce a type of Dzyaloshinskii–Moriya interaction due to the Rashba effect. First-principles calculations and experiments using spin-polarized electron microscopy show that this graphene-induced Dzyaloshinskii–Moriya interaction can have a similar magnitude to that at interfaces with heavy metals. This work paves a path towards two-dimensional-Material-based spin–orbitronics.
Claudio Attaccalite - One of the best experts on this subject based on the ideXlab platform.
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doped graphene as tunable electron phonon Coupling Material
Nano Letters, 2010Co-Authors: Claudio Attaccalite, Ludger Wirtz, Michele Lazzeri, Francesco Mauri, Angel RubioAbstract:We present a new way to tune the electron-phonon Coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.
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Doped graphene as tunable electron-phonon Coupling Material
Nano Letters, 2010Co-Authors: Claudio Attaccalite, Ludger Wirtz, Michele Lazzeri, Francesco Mauri, Angel RubioAbstract:We present a new way to tune the electron-phonon Coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong dependency on the doping level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multi-layer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through the external control of the EPC.
Gong Chen - One of the best experts on this subject based on the ideXlab platform.
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significant dzyaloshinskii moriya interaction at graphene ferromagnet interfaces due to the rashba effect
Nature Materials, 2018Co-Authors: Hongxin Yang, Gong Chen, Alexandre A C Cotta, Alpha T Ndiaye, Sergey A Nikolaev, E A Soares, W A A MacedoAbstract:The possibility of utilizing the rich spin-dependent properties of graphene has attracted much attention in the pursuit of spintronics advances. The promise of high-speed and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. Here we demonstrate that chiral spin textures are induced at graphene/ferromagnetic metal interfaces. Graphene is a weak spin–orbit Coupling Material and is generally not expected to induce a sufficient Dzyaloshinskii–Moriya interaction to affect magnetic chirality. We demonstrate that indeed graphene does induce a type of Dzyaloshinskii–Moriya interaction due to the Rashba effect. First-principles calculations and experiments using spin-polarized electron microscopy show that this graphene-induced Dzyaloshinskii–Moriya interaction can have a similar magnitude to that at interfaces with heavy metals. This work paves a path towards two-dimensional-Material-based spin–orbitronics.
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Significant Dzyaloshinskii–Moriya interaction at graphene–ferromagnet interfaces due to the Rashba effect
Nature Materials, 2018Co-Authors: Hongxin Yang, Gong Chen, Alexandre Cotta, Alpha N’diaye, Sergey Nikolaev, Edmar Soares, Waldemar Macedo, Kai Liu, Andreas Schmid, Albert FertAbstract:The possibility of utilizing the rich spin-dependent properties of graphene has attracted much attention in the pursuit of spintronics advances. The promise of high-speed and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. Here we demonstrate that chiral spin textures are induced at graphene/ferromagnetic metal interfaces. Graphene is a weak spin–orbit Coupling Material and is generally not expected to induce a sufficient Dzyaloshinskii–Moriya interaction to affect magnetic chirality. We demonstrate that indeed graphene does induce a type of Dzyaloshinskii–Moriya interaction due to the Rashba effect. First-principles calculations and experiments using spin-polarized electron microscopy show that this graphene-induced Dzyaloshinskii–Moriya interaction can have a similar magnitude to that at interfaces with heavy metals. This work paves a path towards two-dimensional-Material-based spin–orbitronics.
Wei Wang - One of the best experts on this subject based on the ideXlab platform.
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bonding ingaasp ito si hybrid laser with ito as cathode and light Coupling Material
IEEE Photonics Technology Letters, 2012Co-Authors: Tao Hong, Weixi Chen, Guangzhao Ran, Guogang Qin, Hongliang Zhu, Song Liang, Yang Wang, Jiaoqing Pan, Wei WangAbstract:A 1.5-μ.m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-Coupling Material is presented. The InGaAsP gain structure with a transparent ITO cathode is flip-chip bonded onto a patterned silicon-on-insulator wafer. The light generated in the InGaAsP multiquantum wells is coupled through the ITO cathode into the Si waveguide to form an InGaAsP/ITO/Si hybrid laser. The threshold current density of this hybrid laser is 20 kA/cm2 at 210 K. Due to the advantages of post-bonding and simplicity of the fabrication process, such a hybrid laser may be a promising Si light source.
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Bonding InGaAsP/ITO/Si Hybrid Laser With ITO as Cathode and Light-Coupling Material
IEEE Photonics Technology Letters, 2012Co-Authors: Tao Hong, Weixi Chen, Guangzhao Ran, Guogang Qin, Hongliang Zhu, Song Liang, Yang Wang, Jiaoqing Pan, Wei WangAbstract:A 1.5-μ.m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-Coupling Material is presented. The InGaAsP gain structure with a transparent ITO cathode is flip-chip bonded onto a patterned silicon-on-insulator wafer. The light generated in the InGaAsP multiquantum wells is coupled through the ITO cathode into the Si waveguide to form an InGaAsP/ITO/Si hybrid laser. The threshold current density of this hybrid laser is 20 kA/cm2 at 210 K. Due to the advantages of post-bonding and simplicity of the fabrication process, such a hybrid laser may be a promising Si light source.
