The Experts below are selected from a list of 77841 Experts worldwide ranked by ideXlab platform
Kuo-feng Huang - One of the best experts on this subject based on the ideXlab platform.
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Manipulating exchange bias by spin-orbit torque.
Nature Materials, 2019Co-Authors: Bo Yuan Yang, Ming-han Tsai, Po-chuan Chen, Kuo-feng HuangAbstract:Exchange bias, a shift in the hysteresis loop of a ferromagnet arising from interfacial exchange coupling between adjacent ferromagnetic and antiferromagnetic layers, is an integral part of spintronic devices. Here, we show that spin–orbit torque generated from spin current, a promising approach to switch the ferromagnetic magnetization of next-generation magnetic random access memory, can also be used to manipulate the exchange bias. Applying current pulses to a Pt/Co/IrMn trilayer causes concurrent switching of ferromagnetic magnetization and exchange bias, but with different underlying mechanisms. This implies that the ferromagnetic magnetization and exchange bias can be manipulated independently. Our work demonstrates that spin–orbit torque in ferromagnet/antiferromagnet heterostructures facilitates independent manipulations of distinct magnetic properties, motivating innovative designs for future Spintronics devices. Spin–orbit torque is used to control the magnetic exchange bias in a Pt/Co/IrMn trilayer.
Kerem Yunus Camsari - One of the best experts on this subject based on the ideXlab platform.
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The promise of Spintronics for unconventional computing
Journal of Magnetism and Magnetic Materials, 2021Co-Authors: Giovanni Finocchio, Massimiliano Di Ventra, Kerem Yunus Camsari, Karin Everschor-sitte, Pedram Khalili Amiri, Zhongming ZengAbstract:Abstract Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/or stochasticity that spintronic devices can exhibit, and (iii) their compatibility with CMOS logic manufacturing processes. At the same time, the high endurance and speed of spintronic devices means that they can be rewritten or reconfigured frequently over the lifetime of a circuit, a feature that is essential in many emerging computing concepts. In this perspective, we will discuss how Spintronics may aid in the realization of efficient devices, primarily focusing on magnetic tunnel junctions. We then provide a perspective on how these devices can impact the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing. These paradigms may be used to address some limitations of modern computers, providing a realistic path to intelligent hybrid CMOS-spintronic systems.
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Spintronics for neuromorphic computing
arXiv: Applied Physics, 2020Co-Authors: Julie Grollier, Damien Querlioz, Kerem Yunus Camsari, Karin Everschor-sitte, Shunsuke Fukami, Mark D. StilesAbstract:Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial neurons and synapses are, however, currently limited by the energy and area requirements of these components. Spintronic nanodevices, which exploit both the magnetic and electrical properties of electrons, can increase the energy efficiency and decrease the area of these circuits, and magnetic tunnel junctions are of particular interest as neuromorphic computing elements because they are compatible with standard integrated circuits and can support multiple functionalities. Here we review the development of spintronic devices for neuromorphic computing. We examine how magnetic tunnel junctions can serve as synapses and neurons, and how magnetic textures, such as domain walls and skyrmions, can function as neurons. We also explore Spintronics-based implementations of neuromorphic computing tasks, such as pattern recognition in an associative memory, and discuss the challenges that exist in scaling up these systems.
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The promise of Spintronics for unconventional computing
arXiv: Applied Physics, 2019Co-Authors: Giovanni Finocchio, Massimiliano Di Ventra, Kerem Yunus Camsari, Karin Everschor-sitte, Pedram Khalili Amiri, Zhongming ZengAbstract:Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/or stochasticity that spintronic devices can exhibit, and (iii) their compatibility with CMOS logic manufacturing processes. At the same time, the high endurance and speed of spintronic devices means that they can be rewritten or reconfigured frequently over the lifetime of a circuit, a feature that is essential in many emerging computing concepts. In this perspective, we will discuss how Spintronics may aid in the realization of efficient devices primarily based on magnetic tunnel junctions and how those devices can impact in the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing that in our opinion may be used to address some limitations of modern computers, providing a realistic path to intelligent hybrid CMOS-spintronic systems.
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modular approach to Spintronics
Scientific Reports, 2015Co-Authors: Kerem Yunus Camsari, Samiran Ganguly, Supriyo DattaAbstract:There has been enormous progress in the last two decades, effectively combining Spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and phenomena continue to be discovered at an impressive rate, providing an ever-increasing set of building blocks that could be exploited in designing transistor-like functional devices of the future. The objective of this paper is to provide a quantitative foundation for this building block approach, so that new discoveries can be integrated into functional device concepts, quickly analyzed and critically evaluated. Through careful benchmarking against available theory and experiment we establish a set of elemental modules representing diverse materials and phenomena. These elemental modules can be integrated seamlessly to model composite devices involving both spintronic and nanomagnetic phenomena. We envision the library of modules to evolve both by incorporating new modules and by improving existing modules as the field progresses. The primary contribution of this paper is to establish the ground rules or protocols for a modular approach that can build a lasting bridge between materials scientists and circuit designers in the field of Spintronics and nanomagnetics.
Zhongming Zeng - One of the best experts on this subject based on the ideXlab platform.
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The promise of Spintronics for unconventional computing
Journal of Magnetism and Magnetic Materials, 2021Co-Authors: Giovanni Finocchio, Massimiliano Di Ventra, Kerem Yunus Camsari, Karin Everschor-sitte, Pedram Khalili Amiri, Zhongming ZengAbstract:Abstract Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/or stochasticity that spintronic devices can exhibit, and (iii) their compatibility with CMOS logic manufacturing processes. At the same time, the high endurance and speed of spintronic devices means that they can be rewritten or reconfigured frequently over the lifetime of a circuit, a feature that is essential in many emerging computing concepts. In this perspective, we will discuss how Spintronics may aid in the realization of efficient devices, primarily focusing on magnetic tunnel junctions. We then provide a perspective on how these devices can impact the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing. These paradigms may be used to address some limitations of modern computers, providing a realistic path to intelligent hybrid CMOS-spintronic systems.
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The promise of Spintronics for unconventional computing
arXiv: Applied Physics, 2019Co-Authors: Giovanni Finocchio, Massimiliano Di Ventra, Kerem Yunus Camsari, Karin Everschor-sitte, Pedram Khalili Amiri, Zhongming ZengAbstract:Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/or stochasticity that spintronic devices can exhibit, and (iii) their compatibility with CMOS logic manufacturing processes. At the same time, the high endurance and speed of spintronic devices means that they can be rewritten or reconfigured frequently over the lifetime of a circuit, a feature that is essential in many emerging computing concepts. In this perspective, we will discuss how Spintronics may aid in the realization of efficient devices primarily based on magnetic tunnel junctions and how those devices can impact in the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing that in our opinion may be used to address some limitations of modern computers, providing a realistic path to intelligent hybrid CMOS-spintronic systems.
Manuel Bibes - One of the best experts on this subject based on the ideXlab platform.
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Magnetoelectric Devices for Spintronics
Annual Review of Materials Research, 2014Co-Authors: Stéphane Fusil, Vincent Garcia, A. Barthélémy, Manuel BibesAbstract:The control of magnetism by electric fields is an important goal for the future development of low-power Spintronics. Various approaches have been proposed on the basis of either single-phase multiferroic materials or hybrid structures in which a ferromagnet is influenced by the electric field applied to an adjacent insulator (usually having a ferroelectric, piezoelectric, or multiferroic character). The electric field effect on magnetism can be driven by purely electronic or electrostatic effects or can occur through strain coupling. Here we review progress in the electrical control of magnetic properties (anisotropy, spin order, ordering temperature, domain structure) and its application to prototype spintronic devices (spin valves, magnetic tunnel junctions). We tentatively identify the main outstanding difficulties and give perspectives for Spintronics and other fields.
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Oxide Spintronics
IEEE Transactions on Electron Devices, 2007Co-Authors: Manuel Bibes, Agnès BarthélémyAbstract:Concomitant with the development of metal-based Spintronics in the late 1980's and 1990's, important advances were made on the growth of high-quality oxide thin films and heterostructures. While this was at first motivated by the discovery of high-temperature superconductivity in perovskite Cu oxides, this technological breakthrough was soon applied to other transition metal oxides, and notably mixed-valence manganites. The discovery of colossal magnetoresistance in manganite films triggered an intense research activity on these materials, but the first notable impact of magnetic oxides in the field of Spintronics was the use of such manganites as electrodes in magnetic tunnel junctions, yielding tunnel magnetoresistance ratios one order of magnitude larger than what had been obtained with transition metal electrodes. Since then, the research on oxide Spintronics has been intense with the latest developments focused on diluted magnetic oxides and more recently on multiferroics. In this paper, we will review the most important results on oxide Spintronics, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurry of new magnetic oxides could be useful for next-generation Spintronics devices.Comment: Invited review paper published in a Special Issue of IEEE Transactions on Electron Devices on Spintronic
Parnika Agrawal - One of the best experts on this subject based on the ideXlab platform.
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observation of room temperature magnetic skyrmions and their current driven dynamics in ultrathin metallic ferromagnets
Nature Materials, 2016Co-Authors: Seonghoon Woo, Kai Litzius, Benjamin Kruger, Lucas Caretta, K Richter, Maxwell Mann, Andrea Krone, Robert M Reeve, Markus Weigand, Parnika AgrawalAbstract:Magnetic skyrmions are topologically protected spin textures that exhibit fascinating physical behaviours and large potential in highly energy-efficient spintronic device applications. The main obstacles so far are that skyrmions have been observed in only a few exotic materials and at low temperatures, and fast current-driven motion of individual skyrmions has not yet been achieved. Here, we report the observation of stable magnetic skyrmions at room temperature in ultrathin transition metal ferromagnets with magnetic transmission soft X-ray microscopy. We demonstrate the ability to generate stable skyrmion lattices and drive trains of individual skyrmions by short current pulses along a magnetic racetrack at speeds exceeding 100 m s(-1) as required for applications. Our findings provide experimental evidence of recent predictions and open the door to room-temperature skyrmion Spintronics in robust thin-film heterostructures.
